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1. 发明授权

US5717724A Voice encoding and voice decoding apparatus 失效
标题翻译：语音编码和语音解码装置
公开(公告)号：US5717724A
公开(公告)日：1998-02-10
申请号：US511417
申请日：1995-08-04
申请人： Yasushi Yamazaki , Tomohiko Taniguchi , Tomonori Sato , Hisanari Kimura
发明人： Yasushi Yamazaki , Tomohiko Taniguchi , Tomonori Sato , Hisanari Kimura
IPC分类号： H04B14/04 , G10L11/06 , G10L19/00 , G10L19/12 , G10L21/02 , H04B7/26 , H04B15/00 , G10L3/02 , H04L27/06
CPC分类号： G10L19/12 , G10L21/0208 , G10L25/93
摘要： To improve the voice quality of a digital mobile communication system such as a car telephone or portable telephone when outdoor background noises are superimposed on voices. To achieve the above object, a voice decoding apparatus comprises noise superimposed part detecting means for discriminating between a noise part containing only noises and a voice part containing voices from signal encoded at a transmission side, voice decoding means for decoding an encoded signal in the voice part into a waveform signal, noise decoding means for decoding an encoded signal in the noise part into a waveform signal, and noise control means for controlling the frequency characteristic of said noise part by controlling said noise decoding means when said noise superimposed part detecting means judges the noise part.
摘要翻译：为了提高诸如汽车电话或便携式电话之类的数字移动通信系统的语音质量，当户外背景噪声叠加在语音上时。为了实现上述目的，语音解码装置包括噪声叠加部分检测装置，用于鉴别仅包含噪声的噪声部分和包含来自在发送侧编码的信号的语音的声音部分，语音解码装置，用于对声音中的编码信号进行解码噪声解码装置，用于将噪声部分中的编码信号解码成波形信号;以及噪声控制装置，用于当所述噪声叠加部分检测装置判断时，通过控制所述噪声解码装置来控制所述噪声部分的频率特性噪音部分。

2. 发明授权

US5909662A Speech processing coder, decoder and command recognizer 失效
标题翻译：语音处理编码器，解码器和命令识别器
公开(公告)号：US5909662A
公开(公告)日：1999-06-01
申请号：US793838
申请日：1997-03-11
申请人： Yasushi Yamazaki , Tomohiko Taniguchi , Tomonori Sato , Hitoshi Matsuzawa , Chiharu Kawai
发明人： Yasushi Yamazaki , Tomohiko Taniguchi , Tomonori Sato , Hitoshi Matsuzawa , Chiharu Kawai
IPC分类号： G10L15/26 , G10L19/00 , G10L19/04 , G10L3/02
CPC分类号： G10L19/04 , G10L15/26 , G10L19/00 , H04M2201/40
摘要： The present invention relates to a speech processing device equipped with both a speech coding/decoding function and a speech recognition function, and is aimed at providing a speech processing device equipped with both a speech coding/decoding function and a speech recognition function by using a small amount of memory. The speech processing device of the present invention includes a speech analysis unit for obtaining analysis results by analyzing input speech, a codebook for storing quantization parameters and quantization codes indicating the quantization parameters, a quantizing unit for selecting the quantization parameters and the quantization codes corresponding to the analysis results from the codebook and for outputting selected quantization parameters and selected quantization codes, a coding unit for outputting encoded codes of the input speech including the selected quantization codes, a speech dictionary for storing registered data which represent speech patterns by using the codebook, and a matching unit for obtaining the speech patterns corresponding to the input speech by using one of the analysis results, the selected quantization parameters, and the selected quantization codes.
摘要翻译： PCT No.PCT / JP96 / 02254 Sec。 371日期1997年3月11日 102（e）1997年3月11日PCT PCT 1996年8月8日PCT公布。公开号WO97 / 07498 日期1997年2月27日本发明涉及一种配备有语音编码/解码功能和语音识别功能的语音处理装置，其目的在于提供一种配备语音编码/解码功能和语音的语音处理装置识别功能通过使用少量内存。本发明的语音处理装置包括语音分析单元，用于通过分析输入语音获得分析结果，存储量化参数的码本和指示量化参数的量化码;量化单元，用于选择量化参数和对应于来自码本的分析结果和用于输出所选择的量化参数和选择的量化码;编码单元，用于输出包括所选择的量化码的输入语音的编码代码;用于通过使用码本存储表示语音模式的登记数据的语音字典; 以及匹配单元，用于通过使用分析结果，所选择的量化参数之一和所选择的量化代码来获得与输入语音相对应的语音模式。

3. 发明授权

US06704415B1 Echo canceler 失效
标题翻译：回波消除器
公开(公告)号：US06704415B1
公开(公告)日：2004-03-09
申请号：US09354185
申请日：1999-07-15
申请人： Hiroshi Katayama , Yasushi Yamazaki , Hitoshi Matsuzawa , Yoshihiro Tomita , Mutsumi Saito , Hisanari Kimura
发明人： Hiroshi Katayama , Yasushi Yamazaki , Hitoshi Matsuzawa , Yoshihiro Tomita , Mutsumi Saito , Hisanari Kimura
IPC分类号： H04M100
CPC分类号： H04M9/082
摘要： An echo canceler makes it possible to adaptably control a power of speech reception voice and to reduce distortion of a voice output from a speaker. The echo canceler has a basic structure includes a power control section controlling a power for a speech reception voice, a first filtering section removing a particular component from an output of the power control section, an echo canceling section removing echo components of a speech reception voice, which are added to a speech transmission voice, a second filtering section filtering particular components of the speech reception and transmission voices, and a state judgement section judging existences of the speech reception and transmission voices from an output of the second filtering section and controlling a power attenuation amount of the power control section based on the judgement result.
摘要翻译：回波消除器使得可以适应性地控制语音接收语音的功率并且减少来自扬声器的语音输出的失真。回波消除器具有基本结构，包括控制语音接收语音的功率的功率控制部分，从功率控制部分的输出中去除特定分量的第一滤波部分，去除语音接收语音的回声分量的回声消除部分，其被添加到语音传输语音中，第二滤波部分滤除语音接收和传输语音的特定分量，以及状态判断部分，从第二滤波部分的输出判断语音接收和传输语音的存在，并且控制功率控制部的功率衰减量基于判断结果。

4. 发明授权

US08497562B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08497562B2
公开(公告)日：2013-07-30
申请号：US13180211
申请日：2011-07-11
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： H01L31/102 , H01L27/148 , G01T1/24
CPC分类号： H01L27/14658
摘要： A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要翻译：提供一种固态图像拾取装置，其包括基板; 形成在基板上的晶体管; 光电转换元件，包括连接到晶体管的漏极或源极的第一电极，堆叠在第一电极上的半导体层和堆叠在半导体层上的第二电极; 设置在所述第二电极上的绝缘层; 以及形成在绝缘层上的与绝缘层至少包含无机绝缘膜连接的绝缘层上的偏置线，偏置线经由形成在绝缘层中的接触孔连接到第二电极，并且半导体层的侧表面与无机绝缘膜接触。

5. 发明授权

US07956313B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07956313B2
公开(公告)日：2011-06-07
申请号：US12422616
申请日：2009-04-13
申请人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
发明人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H04N5/374
摘要： There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.
摘要翻译：提供了一种固态图像拾取装置，其具有沿预定方向延伸的多条扫描线，沿与扫描线相交的方向延伸的多条数据线，以及在图像拾取器内的多条偏置线基底上的区域。对于设置在与多条扫描线和多条数据线的交点对应的位置的多个像素中的每一个，由扫描线控制的场效应晶体管和具有电连接到该扫描线的电极的光电转换元件形成通过场效应晶体管的数据线和电连接到偏置线的电极，并且在基板上形成用于静电保护的恒定电位线。对于每个偏置线，具有保护二极管的偏置线静电保护电路。

6. 发明授权

US07928941B2 Electro-optical device, driving circuit and electronic apparatus 有权
标题翻译：电光装置，驱动电路和电子设备
公开(公告)号：US07928941B2
公开(公告)日：2011-04-19
申请号：US12000754
申请日：2007-12-17
申请人： Katsunori Yamazaki , Yasushi Yamazaki
发明人： Katsunori Yamazaki , Yasushi Yamazaki
IPC分类号： G09G3/34
CPC分类号： G09G3/3677 , G09G3/2011 , G09G3/3614 , G09G3/3655 , G09G2300/0876 , G09G2310/0283 , G09G2330/021
摘要： It is possible to suppress the voltage amplitudes of data lines and to prevent deterioration in display quality by a simple configuration.Each of pixels 110 includes a pixel capacitor and a storage capacitor of which one end is connected to a pixel electrode and the other end is connected to each capacitive line 132. If first, second, third, . . . , 320th, and 321st scanning lines 112 are sequentially selected, the capacitive line 132 of each row is provided with TFTs 152, 154, 156 and 158. A source electrode of the TFT 156 of a first row is connected to a first feed line 165 and a gate electrode thereof is connected to a first scanning line 112. A source electrode of the TFT 158 is connected to a second feed line 167 and a gate electrode thereof is connected to a common drain electrode of the TFTs 152 and 154. The drain electrodes of the TFT 156 and 158 are connected to the first capacitive line 132. A gate electrode of the TFT 152 is connected to a second scanning line 112.
摘要翻译：可以通过简单的配置来抑制数据线的电压振幅和防止显示质量的劣化。每个像素110包括像素电容器和存储电容器，其一端连接到像素电极，另一端连接到每个电容线132.如果是第一，第二，第三，。。，第320和第321扫描线112，每行的电容线132设置有TFT 152,154,156和158.第一行的TFT 156的源电极连接到第一馈电线165 其栅电极连接到第一扫描线112. TFT 158的源电极连接到第二馈电线167，其栅电极连接到TFT 152和154的公共漏电极。漏极 TFT 156和158的电极连接到第一电容线132.TFT 152的栅电极连接到第二扫描线112。

7. 发明授权

US07659571B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07659571B2
公开(公告)日：2010-02-09
申请号：US11445236
申请日：2006-06-02
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L29/94
CPC分类号： H01L29/7834 , H01L21/28052 , H01L27/10876 , H01L29/66621 , H01L29/66628
摘要： A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.
摘要翻译：半导体器件设置有半导体衬底，形成在半导体衬底中的沟槽，形成在沟槽的内壁上的栅极绝缘膜，形成在沟槽中的栅电极，以及源极/漏极区域和布置成LDD区域的LDD区域在基本上正交于半导体衬底的衬底表面的方向上。

8. 发明授权

US07465637B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07465637B2
公开(公告)日：2008-12-16
申请号：US11520696
申请日：2006-09-14
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L29/66621 , H01L27/10876 , H01L29/1083 , H01L29/66659 , H01L29/78
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a gate trench in a semiconductor substrate, forming a gate insulation film in an inner wall of the gate trench, filling a gate electrode material into at least an inside of the gate trench, forming a gate electrode by patterning the gate electrode material, and selectively forming a punch-through stopper region prior to patterning the gate electrode material, using a mask in a prescribed position of the semiconductor substrate that is adjacent to the gate trench. The step for forming the punch-through stopper region may be performed subsequent to the step for filling the gate electrode material into the gate trench, or may be performed prior to the step for forming the gate trench.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底中形成栅极沟槽，在栅极沟槽的内壁中形成栅极绝缘膜，将栅电极材料填充到栅极沟槽的至少内部，形成通过对栅电极材料进行构图而形成栅电极，并且在栅极电极材料图案化之前，使用与栅极沟槽相邻的半导体衬底的规定位置的掩模来选择性地形成穿通阻挡区域。用于形成穿通阻止区域的步骤可以在用于将栅电极材料填充到栅极沟槽中的步骤之后进行，或者可以在用于形成栅极沟槽的步骤之前进行。

9. 发明申请

US20060273388A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060273388A1
公开(公告)日：2006-12-07
申请号：US11445236
申请日：2006-06-02
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L29/94
CPC分类号： H01L29/7834 , H01L21/28052 , H01L27/10876 , H01L29/66621 , H01L29/66628
摘要： A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.
摘要翻译：半导体器件设置有半导体衬底，形成在半导体衬底中的沟槽，形成在沟槽的内壁上的栅极绝缘膜，形成在沟槽中的栅电极，以及源极/漏极区域和布置成LDD区域的LDD区域在基本上正交于半导体衬底的衬底表面的方向上。

10. 发明授权

US07009671B2 Liquid crystal device, projection display device and, manufacturing method for substrate for liquid crystal device 有权
标题翻译：液晶装置，投影显示装置及液晶装置用基板的制造方法
公开(公告)号：US07009671B2
公开(公告)日：2006-03-07
申请号：US10808354
申请日：2004-03-25
申请人： Takaaki Tanaka , Yasushi Yamazaki
发明人： Takaaki Tanaka , Yasushi Yamazaki
IPC分类号： G02F1/1337
CPC分类号： G02F1/133734 , G02F1/133753
摘要： A liquid crystal device has inorganic alignment layers (36, 42) disposed on a surface of a liquid crystal layer side of a pair of the substrates, when the range of the average pre-tilt angle θ of liquid crystal molecules 50a of the liquid crystal layer is 5 degrees ≦θ≦20 degrees, twist angle φ of the liquid crystal molecules (50a) of the liquid crystal layer, cell gap d, and helical pitch P of the liquid crystal molecules of the liquid crystal layer satisfy the relationship of (0.6/360)φ 20 degrees, twist angle φ of the liquid crystal molecules (50a) of the liquid crystal layer, cell gap d, and helical pitch P of the liquid crystal molecules of the liquid crystal layer satisfy the relationship of (0.8/360)φ
摘要翻译：当液体的液晶分子的平均预倾角θ的范围为液体时，液晶装置具有设置在一对基板的液晶层侧的表面上的无机配向层（36,42）晶体层的液晶层的液晶分子（50a）的扭转角度phi，液晶层的液晶分子的间隙d和螺旋间距P在5°<θθ= 20°时满足（0.6 / 360）phi 20度时，液晶层的液晶分子（50a）的扭曲角度phi，液晶层的液晶分子的间隙d和螺旋间距P满足（0.8 / 360）phi

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