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1. 发明授权

US5533930A Apparatus for producing a silicon nitride sintered body 失效
标题翻译：氮化硅烧结体的制造装置
公开(公告)号：US5533930A
公开(公告)日：1996-07-09
申请号：US219719
申请日：1994-03-29
申请人： Yasushi Tsuzuki , Shin-ichi Yamagata , Akira Yamakawa
发明人： Yasushi Tsuzuki , Shin-ichi Yamagata , Akira Yamakawa
IPC分类号： C04B35/593 , C04B35/64 , F27B5/04 , F27B21/00 , F27B7/28
CPC分类号： F27B5/04 , C04B35/5935 , C04B35/64 , F27B21/00
摘要： Provided is an apparatus for producing a silicon nitride sintering body made of a furnace including a heater source. The furnace includes a furnace core chamber defined by at least one partition inside the furnace to prevent an atmosphere containing more than about 30 ppm of carbon monoxide from contacting said silicon nitride sintered body. At least an inner surface of the partition is made of a carbon-free heat-proof material which prevents formation of carbon monoxide gas in an atmosphere in contact with the silicon nitride sintered body during sintering. The furnace also includes a gas supply pipe for supplying an N.sub.2 gas or an inactive gas including an N.sub.2 gas into the furnace core. Also provided is a sintering case made of a vessel defining a sintering atmosphere. The vessel has an opening for loading an object to be sintered into the vessel. At least an inner surface of the vessel is made of a carbon-free heat proof material which prevents the formation of carbon monoxide gas in the sintering atmosphere. The vessel also includes a lid for covering the opening. At least an inner surface of the lid is made of a carbon-free heat proof material which prevents the formation of carbon monoxide gas in the sintering atmosphere.
摘要翻译：提供一种用于制造由包括加热器源的炉制成的氮化硅烧结体的设备。该炉包括由炉内的至少一个隔板限定的炉芯室，以防止含有大于约30ppm的一氧化碳的气氛与所述氮化硅烧结体接触。隔板的至少内表面由无碳的耐热材料制成，其防止在烧结期间与氮化硅烧结体接触的气氛中形成一氧化碳气体。炉还包括用于将N 2气体或包括N 2气体的惰性气体供应到炉芯的气体供给管。还提供了由限定烧结气氛的容器制成的烧结壳。容器具有用于将要烧结的物体装载到容器中的开口。容器的至少内表面由无碳的耐热材料制成，其防止在烧结气氛中形成一氧化碳气体。容器还包括用于覆盖开口的盖子。至少盖的内表面由无碳的耐热材料制成，其防止在烧结气氛中形成一氧化碳气体。

2. 发明授权

US5385701A Method of molding silicon nitride ceramics 失效
标题翻译：氮化硅陶瓷成型方法
公开(公告)号：US5385701A
公开(公告)日：1995-01-31
申请号：US919590
申请日：1992-07-24
申请人： Tomoyuki Awazu , Yasushi Tsuzuki , Osamu Komura , Akira Yamakawa
发明人： Tomoyuki Awazu , Yasushi Tsuzuki , Osamu Komura , Akira Yamakawa
IPC分类号： B28B1/08 , B28B1/26 , C04B35/584 , C04B35/622 , C04B33/28 , C04B33/58
CPC分类号： B28B1/26 , C04B35/584 , C04B35/622
摘要： Disclosed herein are a method for molding a high density and homogeneous silicon nitride ceramics within a short time and an apparatus used for the method. A gel-like slurry mixture which is a mixture of ceramic powders consisting mainly of Si.sub.3 N.sub.4 and a liquid and has a powder content of from 45 vol % to 60 vol % is fluidized by imparting thereto a strain by vibration, and the mixture under the fluidized state is filled into, and molded by, a mold. Preferably, the entire part or a part of the mold is made of a liquid permeable material. The vibration preferably has an acceleration of from 0.1 G to 150 G and an amplitude of 1 .mu.m to 1 cm. Furthermore, the viscosity of the slurry filled into the mold is preferably from 2,000 to 20,000 cps.
摘要翻译：本文公开了一种用于在短时间内模制高密度均匀氮化硅陶瓷的方法和用于该方法的装置。作为主要由Si 3 N 4和液体组成的粉末含量为45体积％至60体积％的陶瓷粉末的混合物的凝胶状浆料混合物通过振动赋予其应变而流化，并且流化床状态被模具填充并模制。优选地，模具的整个部分或一部分由液体可渗透的材料制成。振动优选具有0.1G至150G的加速度和1μm至1cm的振幅。此外，填充到模具中的浆料的粘度优选为2,000至20,000cps。

3. 发明授权

US5879078A Device for producing ceramic sintered body 失效
标题翻译：陶瓷烧结体的制造装置
公开(公告)号：US5879078A
公开(公告)日：1999-03-09
申请号：US425813
申请日：1995-04-19
申请人： Yasushi Tsuzuki , Jin-Joo Matsui , Akira Yamakawa
发明人： Yasushi Tsuzuki , Jin-Joo Matsui , Akira Yamakawa
IPC分类号： B28C1/04 , C04B35/565 , C04B35/593 , C04B35/622 , C04B35/626 , B01F15/02
CPC分类号： C04B35/565 , B01F7/00033 , C04B35/5935 , C04B35/626
摘要： A device for producing a ceramic sintered body consisting essentially of a mixing trough for mixing ceramic powder with water to form a slurry, the mixing trough having stirring blades, a separate slurry circulation conduit and a slurry mixing deflocculating unit, said separate slurry circulation conduit connecting said mixing trough and said deflocculating unit, said slurry mixing unit deflocculating said powder which has been flocculated with no grinding of powder by means of causing a high-speed shear flow and a high-speed contraction flow in the slurry, said slurry being repeatedly circulated form said slurry mixing unit to said mixing trough through said separate slurry circulation conduit.
摘要翻译：一种陶瓷烧结体的制造装置，其主要由混合槽组成，该混合槽用于将陶瓷粉末与水混合以形成浆料，具有搅拌叶片的混合槽，分离的淤浆循环管道和浆料混合防絮凝装置，所述分离的浆料循环管道连接所述混合槽和所述抗絮凝单元，所述浆料混合单元通过在所述浆料中引起高速剪切流和高速收缩流来对已经絮凝的粉末进行了絮凝，所述粉末没有粉碎，所述浆料被重复循环通过所述单独的浆料循环管道将所述浆料混合单元形成到所述混合槽。

4. 发明授权

US5538927A Silicon nitride powder and its manufacturing 失效
标题翻译：氮化硅粉末及其制造
公开(公告)号：US5538927A
公开(公告)日：1996-07-23
申请号：US403122
申请日：1995-03-13
申请人： Yasushi Tsuzuki , Tomoyuki Awazu , Akira Yamakawa
发明人： Yasushi Tsuzuki , Tomoyuki Awazu , Akira Yamakawa
IPC分类号： C01B21/068 , C04B35/593 , C04B35/584
CPC分类号： C04B35/5935 , C01B21/0687 , C01P2004/32 , C01P2004/61 , C01P2006/12 , C01P2006/22
摘要： A silicon nitride powder with which a highly reliable silicon nitride with high strength and small strength and dimensional variances is obtainable is disclosed. By setting the amount of their surface acidic groups per B.E.T. surface area to not less than 0.2 .mu.eq/m.sup.2, their dispersibility in a mixing solvent is drastically improved. By using them, moldings with high density and homogeneity can be obtained, thereby enabling in turn a highly reliable sintered product of silicon nitride with high strength and small strength and dimensional variances to be easily manufactured. Besides, in the silicon nitride powder, the proportion of the silicon [Si*] belonging to SiO.sub.2, of the surface silicon [Si], which is determined by the X-ray photoelectron spectroscopy (XPS), should be not less than 0.07 in its atomic ratio [Si*/Si] and that to silicon of the surface carbon [C] which is determined by XPS in the same way should be not more than 0.20 in its atomic ratio [C/Si].
摘要翻译：公开了一种可获得具有高强度和小的强度和尺寸变化的高度可靠的氮化硅的氮化硅粉末。通过设定每个B.E.T.的表面酸性基团的量。表面积不小于0.2μeq / m2，其在混合溶剂中的分散性显着提高。通过使用它们，可以获得高密度和均匀的模制品，从而可以容易地制造高可靠性，高强度和小的强度和尺寸变化的高可靠性的氮化硅烧结产品。此外，在氮化硅粉末中，由X射线光电子能谱（XPS）确定的表面硅[Si]的属于SiO 2的硅[Si *]的比例应不小于0.07 其原子比[Si * / Si]和表面碳[C]的硅以相同的方式由XPS确定，其原子比[C / Si]应不大于0.20。

5. 发明授权

US06458298B1 Process for molding ceramics 失效
标题翻译：陶瓷成型工艺
公开(公告)号：US06458298B1
公开(公告)日：2002-10-01
申请号：US08505069
申请日：1995-07-21
申请人： Tomoyuki Awazu , Yasushi Tsuzuki , Akira Yamakawa
发明人： Tomoyuki Awazu , Yasushi Tsuzuki , Akira Yamakawa
IPC分类号： B28B126
CPC分类号： B28B1/262 , B28B1/265 , B29C2043/3628 , B29L2023/00
摘要： A wet molding method in which a ceramic slurry is charged into a cavity and uniaxially pressed by a punch to remove excess liquid from a portion of the slurry facing the punch to effect molding, the method being improved by maintaining at least one of the following conditions; (a) the pressing of the slurry is stopped at a time between T and 1.5 T, T being defined as the pressing time necessary to remove sufficient excess liquid from the slurry in the mold to produce a molded mass; or (b) the punch displacement position at a time at which sufficient excess liquid is removed from the slurry in the mold to produce a molded mass is less than 17% of the total mold length.
摘要翻译：一种湿法成型方法，其中将陶瓷浆料装入空腔中并通过冲头单轴挤压以从面向冲头的浆料的一部分中除去多余的液体以实现模塑，该方法通过保持以下条件中的至少一种而得到改善（a）在T和1.5T之间停止浆料的压制，T定义为从模具中的浆料中除去足够多的液体以产生模制物料所需的挤压时间; 或（b）在模具中从浆料中除去足够多的液体以产生模制物料的时间处的冲头位移位置小于总模具长度的17％。

6. 发明授权

US5394015A Method of producing sintered silicon nitrides 失效
标题翻译：制造烧结硅氮化物的方法
公开(公告)号：US5394015A
公开(公告)日：1995-02-28
申请号：US91192
申请日：1993-07-14
申请人： Yasushi Tsuzuki , Tomoyuki Awazu , Akira Yamakawa
发明人： Yasushi Tsuzuki , Tomoyuki Awazu , Akira Yamakawa
IPC分类号： C04B35/584 , C04B35/593 , F01L1/04 , F01L3/02 , F02F5/00 , F16J9/26 , C04B35/58
CPC分类号： C04B35/584 , C04B35/5935 , C04B35/6263 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3865 , C04B2235/3878 , C04B2235/5445 , C04B2235/6022 , C04B2235/604 , C04B2235/6567 , C04B2235/658 , C04B2235/661 , C04B2235/77 , C04B2235/96
摘要： The invention provides a method of producing sintered silicon nitrides having such strength characteristics as are sufficient to insure satisfactory reliability of the sintered silicon nitride for use in applications such as automotive engine parts and bearings. The method comprises preparing a sintering aid by blending yttrium oxide, spinel, and aluminum oxide and/or aluminum nitride together in such proportions in terms of molar ratios of metal elements that Y/(Al+Mg) is 0.23 to 0.85 and Al/Mg is 2.1 to 5.2, mixing 5.0 to 13.0% by weight of the sintering aid with 87.0 to 95.0% by weight of a silicon nitride powder having an .alpha. crystallinity of not less than 60%, and, after the resulting powder mixture is molded into shape, sintering the molded piece at temperatures of 1400 to 1650.degree. C. in a nitrogen gas atmosphere or in an inert gas atmosphere containing nitrogen gas.
摘要翻译：本发明提供了一种制造烧结硅氮化物的方法，其具有足以确保用于汽车发动机部件和轴承的应用中的氮化硅烧结体的令人满意的可靠性的强度特性。该方法包括通过以Y /（Al + Mg）为0.23至0.85的金属元素的摩尔比和Al / Mg的摩尔比将氧化钇，尖晶石和氧化铝和/或氮化铝以这样的比例混合来制备烧结助剂为2.1〜5.2，将5.0〜13.0重量％的烧结助剂与87.0〜95.0重量％的α结晶度为60％以上的氮化硅粉末混合，在得到的粉末混合物成型后，在氮气气氛中或在含有氮气的惰性气体气氛中，在1400〜1650℃的温度下烧结成型体。

7. 发明申请

US20080203420A1 Collective Substrate, Semiconductor Element Mount, Semiconductor Device, Imaging Device, Light Emitting Diode Component and Light Emitting Diode 有权
标题翻译：集成基板，半导体元件安装，半导体器件，成像装置，发光二极管部件和发光二极管
公开(公告)号：US20080203420A1
公开(公告)日：2008-08-28
申请号：US10589747
申请日：2005-07-21
申请人： Kenjiro Higaki , Daisuke Takagi , Sadamu Ishidu , Yasushi Tsuzuki
发明人： Kenjiro Higaki , Daisuke Takagi , Sadamu Ishidu , Yasushi Tsuzuki
IPC分类号： H01L33/00 , H01L23/14 , H01L31/0203 , H05K1/09
CPC分类号： H01L33/62 , H01L23/49827 , H01L24/97 , H01L31/02002 , H01L31/0203 , H01L33/486 , H01L2224/48091 , H01L2224/48227 , H01L2924/01004 , H01L2924/01046 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2924/16195 , H01L2924/3025 , H05K1/0306 , H05K3/0052 , H05K3/403 , H05K2201/09181 , H05K2201/09827 , H01L2924/00014 , H01L2924/00
摘要： A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles θ1, θ2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL). A light emitting diode component (LE2) includes a light emitting element (LE1) mounted on the main surface (21) of the insulative member (2) with the minimum size hole portion (11a) of the through-hole being filled with an electrically conductive material (33a), the light emitting element being sealed with a fluorescent material and/or a protective resin (FR). A light emitting diode (LE3) includes the light emitting diode component (LE2) mounted in a package (7).
摘要翻译：通过烧制陶瓷生片并在所得到的衬底中形成通孔（11）来制备集合衬底（1）。通孔（11）各自具有包括锥形表面（11b，11c）的内表面，该锥形表面（11b，11c）从开口尺寸从主表面（21）和外部连接表面（22）逐渐减小到最小大小孔部分（11a）。锥形表面（11b，11c）分别与主表面（21）和外部连接表面（22）分别形成钝角θ1，θ2。半导体元件安装件（BL）包括从集体基板（1）切出的绝缘构件（2）。成像装置（PE2）包括安装在由框架（4）包围的区域中的成像元件（PE 1），该框架结合到绝缘构件（2）的主表面（21）并由盖（FL ）。发光二极管部件（LE2）包括安装在绝缘部件（2）的主表面（21）上的发光元件（LE 1），其中填充有通孔的最小尺寸的孔部分（11a）用导电材料（33a），发光元件用荧光材料和/或保护树脂（FR）密封。发光二极管（LE 3）包括安装在封装（7）中的发光二极管部件（LE 2）。

8. 发明授权

US07298049B2 Submount for mounting semiconductor device 有权
标题翻译：用于安装半导体器件的底座
公开(公告)号：US07298049B2
公开(公告)日：2007-11-20
申请号：US10506510
申请日：2003-03-03
申请人： Teruo Amoh , Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
发明人： Teruo Amoh , Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
IPC分类号： H01L23/48
CPC分类号： H01S5/02272 , H01L33/62 , H01L2924/0002 , H01S5/02476 , H01L2924/00
摘要： A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount 3 comprises (a) a substrate 4; and (b) a solder layer 8 formed on the top surface 4f of the substrate 4. The solder layer 8 before melting has a surface roughness, Ra, of at most 0.18 μm. It is more desirable that the solder layer 8 before melting have a surface roughness, Ra, of at most 0.15 μm, yet more desirably at most 0.10 μm. A semiconductor unit 1 comprises the submount 3 and a laser diode 2 mounted on the solder layer 8 of the submount 3.
摘要翻译：一种能够在其上可靠地安装半导体发光器件的基座，以及并入该基座的半导体单元。基座3包括（a）基板4; 和（b）形成在基板4的顶面4f上的焊料层8。熔融前的焊料层8的表面粗糙度Ra为0.18μm以下。更理想的是，熔融前的焊料层8的表面粗糙度Ra为0.15μm以下，进一步优选为0.10μm以下。半导体单元1包括基座3和安装在基座3的焊料层8上的激光二极管2。

9. 发明申请

US20050269749A1 Aluminum nitride sintered compact, metallized substrate, heater, jig and method for producing aluminum nitride sintered compact 有权
标题翻译：氮化铝烧结体，金属化基板，加热器，夹具以及氮化铝烧结体的制造方法
公开(公告)号：US20050269749A1
公开(公告)日：2005-12-08
申请号：US10524270
申请日：2003-07-30
申请人： Yasushi Itoh , Sadamu Ishidu , Yasushi Tsuzuki
发明人： Yasushi Itoh , Sadamu Ishidu , Yasushi Tsuzuki
IPC分类号： H05B3/20 , C04B35/581 , C04B35/638 , C04B35/64 , H01L23/13 , H05B3/10 , H05B3/14 , H05B3/16 , C04B33/32
CPC分类号： C04B35/638 , B32B2311/08 , C04B35/581 , C04B35/62655 , C04B35/6303 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3241 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3296 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/3865 , C04B2235/3895 , C04B2235/5436 , C04B2235/6021 , C04B2235/6025 , C04B2235/656 , C04B2235/668 , C04B2235/94 , C04B2235/9607 , C04B2235/963 , C04B2235/9638 , C04B2237/408 , H05B3/141
摘要： Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substrate 1 has a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 μm/mm or more and less than 2 μm/mm, and a local waviness height of 0 μm or more and 100 μm or less.
摘要翻译：与现有技术相比，具有较大面积和较小厚度的氮化铝烧结体，其中氮化铝烧结体具有平坦度，具有控制的翘曲和/或波纹高度。还提供了这种烧结体的制造方法以及使用这种烧结体的金属化基板和加热器。氮化铝基板1的最大长度为320mm以上，厚度大于0mm且2mm以下，翘曲为0mum / mm以上且小于2mum / mm，局部波纹高度 0um以上且100μm以下。

10. 发明授权

US07622203B2 Aluminum nitride sintered compact 有权
标题翻译：氮化铝烧结体
公开(公告)号：US07622203B2
公开(公告)日：2009-11-24
申请号：US10524270
申请日：2003-07-30
申请人： Yasushi Itoh , Sadamu Ishidu , Yasushi Tsuzuki
发明人： Yasushi Itoh , Sadamu Ishidu , Yasushi Tsuzuki
IPC分类号： B32B9/00
CPC分类号： C04B35/638 , B32B2311/08 , C04B35/581 , C04B35/62655 , C04B35/6303 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3241 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3296 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/3865 , C04B2235/3895 , C04B2235/5436 , C04B2235/6021 , C04B2235/6025 , C04B2235/656 , C04B2235/668 , C04B2235/94 , C04B2235/9607 , C04B2235/963 , C04B2235/9638 , C04B2237/408 , H05B3/141
摘要： Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substrate 1 has a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 μm/mm or more and less than 2 μm/mm, and a local waviness height of 0 μm or more and 100 μm or less.
摘要翻译：与现有技术相比，具有较大面积和较小厚度的氮化铝烧结体，其中氮化铝烧结体具有平坦度，具有控制的翘曲和/或波纹高度。还提供了这种烧结体的制造方法以及使用这种烧结体的金属化基板和加热器。氮化铝基板1的最大长度为320mm以上，厚度大于0mm且2mm以下，翘曲为0mum / mm以上且小于2mum / mm，局部波纹高度 0um以上且100μm以下。

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