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1. 发明授权

US5686921A Radar system 失效
标题翻译：雷达系统
公开(公告)号：US5686921A
公开(公告)日：1997-11-11
申请号：US575337
申请日：1995-12-20
申请人： Yasushi Okada , Katsuhiko Takebe , Hiroyuki Ando
发明人： Yasushi Okada , Katsuhiko Takebe , Hiroyuki Ando
IPC分类号： G01S7/02 , G01S13/10 , G01S13/32 , G01S13/36 , G01S13/87 , G01S13/93
CPC分类号： G01S13/10 , G01S13/36 , G01S13/931
摘要： A radar system is designed to allow switched use of a pulse radar mode for detecting a target at a long distance away and a phase-difference radar mode for detecting a target at a short distance away, whereby target detection can be performed from a very close range to a long range with high accuracy. Also, the pulse radar mode enables detection of a plurality of targets in different ranges.
摘要翻译：雷达系统被设计成允许切换使用脉冲雷达模式来检测远距离的目标，以及相差雷达模式，用于在短距离处检测目标，从而可以从非常接近地执行目标检测范围广，精度高。此外，脉冲雷达模式能够检测不同范围内的多个目标。

2. 发明授权

US5654715A Vehicle-surroundings monitoring apparatus 失效
标题翻译：车辆周边监控装置
公开(公告)号：US5654715A
公开(公告)日：1997-08-05
申请号：US573114
申请日：1995-12-15
申请人： Yuitsu Hayashikura , Shigeki Kato , Katsuhiko Takebe , Yasushi Okada
发明人： Yuitsu Hayashikura , Shigeki Kato , Katsuhiko Takebe , Yasushi Okada
IPC分类号： G01S13/36 , G01S13/87 , G01S13/93
CPC分类号： G01S13/931 , G01S13/87 , G01S13/36 , G01S2013/9314 , G01S2013/9317 , G01S2013/9321 , G01S2013/9325 , G01S2013/9332 , G01S2013/9342 , G01S2013/9346 , G01S2013/935 , G01S2013/9353 , G01S2013/9375 , G01S2013/9378 , G01S2013/9385
摘要： A plurality of radar devices are provided on and along the periphery of a vehicle for monitoring in different directions. While sequentially switching the radar device to be used for the monitoring operation in response to a transmission-enable signal, a processing device detects, for each direction, presence of and distance to an obstacle or object on the basis of a phase difference (time difference) between signals transmitted and received via the corresponding radar device. Thus, the processing device causes an image display device to show the detected conditions around the vehicle and also causes a sound synthesizer to output a sound message to call the vehicle operator's attention.
摘要翻译：多个雷达装置设置在车辆的周边上并沿着车辆的周边，用于在不同方向上进行监视。在响应于发送使能信号顺序地切换要用于监视操作的雷达装置时，处理装置基于相位差（时间差）检测每个方向的存在和与障碍物或物体的距离）通过相应的雷达设备发送和接收的信号之间。因此，处理装置使图像显示装置显示车辆周围的检测条件，并且还使声音合成器输出声音消息以呼叫车辆操作者的注意力。

3. 发明授权

US06958775B1 Photo-sensor circuit with shutter function and operating method 失效
标题翻译：具有快门功能和操作方式的光电传感器电路
公开(公告)号：US06958775B1
公开(公告)日：2005-10-25
申请号：US09710196
申请日：2000-11-10
申请人： Sukeyuki Shinotsuka , Katsuhiko Takebe
发明人： Sukeyuki Shinotsuka , Katsuhiko Takebe
IPC分类号： G01J1/46 , H01L27/146 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378 , H04N3/14
CPC分类号： G01J1/46
摘要： A photo-sensor circuit according to an embodiment of the present invention comprises a photo-detecting element (PD) for detecting a light signal and converting the same signal into an electric signal, a first MOS transistor (QT) for charging and discharging parasitic capacitance (C1), a capacitor (C2) for accumulating a terminal voltage of the photo-detecting element as a pixel signal, a second MOS transistor (Q2) for transferring a parasitic capacitance charge from the photo-detecting element to the capacitor (C2), a third MOS transistor (Q3) for amplifying the terminal voltage of the capacitor and a fourth MOS transistor (Q4) for selectively outputting an amplified pixel signal. In the above structure, the first MOS transistor and the second MOS transistor are turned ON for a certain period of time before accumulation of a pixel signal to equalize terminal voltages of the photo-detecting element and the capacitor by charging and discharging the parasitic capacitance of the photo-detecting element and the capacitor, the second MOS transistor is turned OFF and the capacitor is open after a certain period of time of accumulation of the pixel signal and then the fourth MOS transistor is switched ON. This photo-sensor circuit offers an advantageous feature of producing a pixel signal having high reproducibility.
摘要翻译：根据本发明实施例的光传感器电路包括用于检测光信号并将相同信号转换为电信号的光检测元件（PD），用于对寄生电容进行充电和放电的第一MOS晶体管（QT）（C 1），用于将光检测元件的端子电压累积为像素信号的电容器（C 2），用于将寄生电容电荷从光检测元件传递到电容器的第二MOS晶体管（Q 2）（C 2），用于放大电容器的端子电压的第三MOS晶体管（Q 3）和用于选择性地输出放大的像素信号的第四MOS晶体管（Q 4）。在上述结构中，第一MOS晶体管和第二MOS晶体管在累积像素信号之前被导通一段时间，以通过对光电检测元件和电容器的端子电压进行充电和放电来平衡寄生电容光检测元件和电容器，第二MOS晶体管截止，并且在像素信号的累积的一定时间段之后电容器断开，然后第四MOS晶体管导通。该光电传感器电路提供了产生具有高再现性的像素信号的有利特征。

4. 发明授权

US4589780A Means for generating an intermittent alarm sound for a timepiece 失效
标题翻译：用于产生用于钟表的间歇性报警声的装置
公开(公告)号：US4589780A
公开(公告)日：1986-05-20
申请号：US787699
申请日：1985-10-15
申请人： Katsuhiko Takebe
发明人： Katsuhiko Takebe
IPC分类号： G04G13/00 , G04C21/02 , G04G13/02 , G10K15/04 , G04B23/02
CPC分类号： G04G13/021
摘要： A timepiece of the type including a time indicating circuit and an electronic alarm sound generating means. The alarm sound generating means including a counter outputting a sound switching signal at every predetermined time by counting the pulse signal of the time indicating circuit, a switch-over circuit consisting of a flipflop group for supplying the sounding number switch-over signal to preset the sounding numbers which are performed at a fixed period by the sound switching signal, a preset counter counting for a fixed pulse signal of the time indicating circuit and a value which is determined by the sounding number switch-over signal, a waveform convertor for outputting a preset control signal which presets the preset counter at every fixed period by utilizing the pulse signal from the time indicating circuit, a gate means for outputting the fixed pulse signal together with an audible frequency signal by the time the preset counter is counted up by the fixed pulse signal after the preset counter is preset, and an electronic sounding circuit performing the sounding action of the signal from the gate means, whereby an electronic alarm sound generating means for a timepiece can change its sounding numbers and intervals repeatedly at a fixed period and at a determined time.
摘要翻译：一种包括时间指示电路和电子警报声产生装置的类型的钟表。报警声发生装置包括：计数器，通过对时间指示电路的脉冲信号进行计数，输出每隔预定时间的声音切换信号的计数器;切换电路，包括用于提供探空号码切换信号的触发器组，通过声音切换信号在固定时间段执行的声音数量，对于时间指示电路的固定脉冲信号的预设计数器计数和由探测号码切换信号确定的值;波形转换器，用于输出预置控制信号，其通过利用来自时间指示电路的脉冲信号在每个固定周期预设预置计数器;门装置，用于在预设计数器向上固定时输出固定脉冲信号和可听频率信号预置计数器之后的脉冲信号，以及执行该信号的探测动作的电子探测电路通过门装置，用于钟表的电子报警声产生装置可以在固定时间段和确定的时间重复地改变其发声数量和间隔。

5. 发明授权

US07486322B2 Light sensor circuit having source/drain voltage changing-over circuit to minimize afterglow 失效
标题翻译：具有源/漏电压转换电路的光传感器电路，以最小化余辉
公开(公告)号：US07486322B2
公开(公告)日：2009-02-03
申请号：US10471522
申请日：2002-03-01
申请人： Sukeyuki Shinotsuka , Katsuhiko Takebe
发明人： Sukeyuki Shinotsuka , Katsuhiko Takebe
IPC分类号： H04N5/335 , H04N3/14 , G01J1/44
CPC分类号： H04N5/35518 , G01J1/44 , G01J1/46 , G01J2001/448 , H04N5/35509 , H04N5/378
摘要： Disclosed is a light sensor circuit which works by producing in a photoelectric converting element a photo current proportional to a quantity of incident light falling thereon, converting the photo current into a voltage signal by using a threshold region characteristic of a transistor with a logarithmic output characteristic in a weak inverse state and producing a sensor output corresponding to the voltage signal. The light sensor circuit is provided with an initializing means for removing an electric charge remaining in a parasite capacitor of the photoelectric converting element before detecting light by the same element, thereby achieving a wide dynamic range and obtaining a sensor signal with no afterglow even if it works with a small quantity of incident light.
摘要翻译：公开了一种光传感器电路，其通过在光电转换元件中产生与入射光的入射光成比例的光电流而工作，通过使用具有对数输出特性的晶体管的阈值区域特性将光电流转换为电压信号处于弱反向状态并产生对应于电压信号的传感器输出。光传感器电路设置有初始化装置，用于在由同一元件检测光之前去除光电转换元件的寄生电容器中剩余的电荷，从而实现宽的动态范围，并获得没有余辉的传感器信号，即使工作与少量的入射光。

6. 发明授权

US07176435B2 Image sensor with a voltage switching circuit for low afterglow 失效
标题翻译：具有低余辉电压开关电路的图像传感器
公开(公告)号：US07176435B2
公开(公告)日：2007-02-13
申请号：US09848471
申请日：2001-05-03
申请人： Sukeyuki Shinotsuka , Nobuhiro Fueki , Jiro Kurita , Katsuhiko Takebe
发明人： Sukeyuki Shinotsuka , Nobuhiro Fueki , Jiro Kurita , Katsuhiko Takebe
IPC分类号： H03F3/08 , H04N3/14
CPC分类号： H04N5/35518 , H04N5/2175 , H04N5/363
摘要： Disclosed is an image sensor consisting of light sensor circuits arranged to form an array of pixels, each of which produces in a photoelectric converting element a sensor current proportional to the quantity of light falling thereon and converts the sensor current into a voltage signal by a MOS type transistor with a logarithmic output characteristic in a weak inverse state, wherein a means for changing over a drain voltage of the transistor for each light sensor circuit to a value lower than a normal value for a specified time to remove a charge accumulated in a parasitic capacity of the photoelectric converting element to initialize the circuit before detecting a light signal. The image sensor can obtain a voltage signal corresponding to the quantity of incident light even if the sensor current was rapidly changed, thereby eliminating the possibility of occurrence of afterglow of each pixel even at a small quantity of incident light.
摘要翻译：公开了一种由光传感器电路组成的图像传感器，其被布置成形成像素阵列，每个像素阵列在光电转换元件中产生与其上的光量成比例的传感器电流，并将传感器电流通过MOS转换成电压信号具有弱反相状态的对数输出特性的晶体管，其中，用于将每个光传感器电路的晶体管的漏极电压切换到低于正常值的值达指定时间的装置，以去除寄生在其中的电荷光电转换元件在检测光信号之前初始化电路的容量。即使传感器电流迅速变化，图像传感器也可以获得与入射光量相对应的电压信号，从而即使在少量入射光下也能消除每个像素的余辉的可能性。

7. 发明授权

US5187986A Semiconductor sensor 失效
标题翻译：半导体传感器
公开(公告)号：US5187986A
公开(公告)日：1993-02-23
申请号：US651131
申请日：1991-02-06
申请人： Katsuhiko Takebe , Satoshi Hiyama
发明人： Katsuhiko Takebe , Satoshi Hiyama
IPC分类号： G01L1/18 , G01D5/14 , G01D5/18 , G01L1/00 , G01L9/00 , G01P15/08 , G01P15/12 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L29/84
CPC分类号： G01L9/0098 , G01L1/005 , G01P15/124
摘要： A semiconductor sensor includes a field-effect transistor for detecting a physical quantity such as pressure, strain, acceleration or the like. The field-effect transistor is disposed on an elastically deformable portion of a cantilevered semiconductor substrate. A detected signal generator generates a signal representing a change in a drain current of the field-effect transistor in response to a stress which is applied to the field-effect transistor due to elastic deformation of the semiconductor substrate. The field-effect transistor may be supplied with a fixed gate bias voltage and an integrator may generate a signal representing an integral of the drain current for temperature compensation. Alternatively, an integrator may generate a signal representing an integral of the drain current, and a gate bias voltage may be applied to the field-effect transistor so that the signal generated by the integrator will be of a predetermined value for automatic temperature compensation. As a further alternative, a self-bias circuit may be connected between the field-effect transistor and the detected signal generator for applying a gate self-bias voltage to the field-effect transistor for automatic temperature compensation.

8. 发明授权

US06697113B1 Solid-state image pick-up device and drive method for same 失效
标题翻译：固态摄像装置及其驱动方法相同
公开(公告)号：US06697113B1
公开(公告)日：2004-02-24
申请号：US09258842
申请日：1999-02-26
申请人： Toshiaki Tanaka , Katsuhiko Takebe
发明人： Toshiaki Tanaka , Katsuhiko Takebe
IPC分类号： H04N314
CPC分类号： H04N5/374
摘要： In a solid-state image pick-up device having a photoelectrical conversion element cell array with a matrix arrangement of cells, between either a first or second signal line and a prescribed selection circuit that drives the signal line are provided a multiple signal line received light amount value storage means that includes a amount of received light detection means that separately reads out the amount of received light data for a plurality of photoelectrical conversion element cells connected to a plurality of selected signal lines in the other signal group, and a switching means that selectively transmits this detected amount of received light information to an output means.
摘要翻译：在具有具有单元的矩阵排列的光电转换元件单元阵列的固态图像拾取装置中，在第一或第二信号线与驱动信号线的规定选择电路之间提供多信号线接收光数量值存储装置，其包括接收光检测装置的量，该装置分别读出连接到另一个信号组中的多个所选信号线的多个光电转换元件单元的接收光数据量，以及切换装置，选择性地将该检测到的接收光信息量发送到输出装置。

9. 发明授权

US5861621A Photosensor circuit having an initial setting unit 失效
标题翻译：光传感器电路具有初始设定单元
公开(公告)号：US5861621A
公开(公告)日：1999-01-19
申请号：US925852
申请日：1997-09-09
申请人： Katsuhiko Takebe , Hiroshi Abe
发明人： Katsuhiko Takebe , Hiroshi Abe
IPC分类号： G01J1/44 , H01L27/14 , H01L31/02 , H01L31/10 , H03F1/56 , H03F3/08 , H01J40/14
CPC分类号： H03F1/56 , H01L31/02019 , H03F3/082 , H04N5/35518 , H03F2200/18 , H03F2200/375
摘要： A photosensor circuit comprises a photoelectric transducer, an n-channel MOS transistor and an initial setting unit for precluding the occurrence of a residual image phenomenon. When an optical signal is generated by the photoelectric transducer, the initial setting unit sets the gate voltage of the n-channel MOS transistor at a high value for a predetermined time to lower the drain-source impedance of the n-channel MOS transistor to thereby control charge or discharge of a capacitor connected to a source terminal.
摘要翻译：光电传感器电路包括光电换能器，n沟道MOS晶体管和用于排除残留图像现象的发生的初始设定单元。当由光电变换器产生光信号时，初始设定单元将n沟道MOS晶体管的栅极电压设定为高电平达预定时间，以降低n沟道MOS晶体管的漏极 - 源极阻抗，由此控制连接到源极端子的电容器的充电或放电。

10. 发明授权

US5115292A Semiconductor sensor 失效
标题翻译：半导体传感器
公开(公告)号：US5115292A
公开(公告)日：1992-05-19
申请号：US403296
申请日：1989-09-05
申请人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
发明人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
IPC分类号： G01P15/08 , G01P15/12
CPC分类号： G01P15/123 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L2224/48091 , H01L2924/12032 , H01L2924/13091 , Y10S73/04
摘要： This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.

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