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1. 发明申请

US20060104850A1 Ultra-low carbon stainless steel 失效
标题翻译：超低碳不锈钢
公开(公告)号：US20060104850A1
公开(公告)日：2006-05-18
申请号：US10522811
申请日：2003-07-30
申请人： Yasushi Iwata , Akiyoshi Chayahara
发明人： Yasushi Iwata , Akiyoshi Chayahara
IPC分类号： C22C38/00
CPC分类号： C22C38/42 , C22C38/004 , C22C38/02 , C22C38/04 , C22C38/44 , C23C8/02 , C23C8/26 , C23C8/38 , C23C14/48 , Y10S148/90
摘要： In a surface layer of an ultra-low carbon stainless steel comprising a seal function layer in the surface layer, an ion such as a nitrogen ion is implanted to form the seal function layer. Since the ultra-low carbon stainless steel comprising the seal function layer is excellent in elasticity, sealing properties, peelability and abrasion resistance, it can make a seal material which has been used unnecessary, and can realize all stainless-made products such as seal and joint system parts.
摘要翻译：在表面层中包含密封功能层的超低碳不锈钢表面层中，注入离子如氮离子以形成密封功能层。由于包含密封功能层的超低碳不锈钢的弹性，密封性，剥离性和耐磨性优异，因此可以使不必要的密封材料成为可以实现的所有不锈钢制品，例如密封和联合系统零件。

2. 发明授权

US07648586B2 Ultra-low carbon stainless steel 失效
标题翻译：超低碳不锈钢
公开(公告)号：US07648586B2
公开(公告)日：2010-01-19
申请号：US10522811
申请日：2003-07-30
申请人： Yasushi Iwata , Akiyoshi Chayahara
发明人： Yasushi Iwata , Akiyoshi Chayahara
IPC分类号： C22C38/20 , C22C38/40 , C22F14/16
CPC分类号： C22C38/42 , C22C38/004 , C22C38/02 , C22C38/04 , C22C38/44 , C23C8/02 , C23C8/26 , C23C8/38 , C23C14/48 , Y10S148/90
摘要： In a surface layer of an ultra-low carbon stainless steel comprising a seal function layer in the surface layer, an ion such as a nitrogen ion is implanted to form the seal function layer. Since the ultra-low carbon stainless steel comprising the seal function layer is excellent in elasticity, sealing properties, peelability and abrasion resistance, it can make a seal material which has been used unnecessary, and can realize all stainless-made products such as seal and joint system parts.
摘要翻译：在表面层中包含密封功能层的超低碳不锈钢表面层中，注入离子如氮离子以形成密封功能层。由于包含密封功能层的超低碳不锈钢的弹性，密封性，剥离性和耐磨性优异，因此可以使不必要的密封材料成为可以实现的所有不锈钢制品，例如密封和联合系统零件。

3. 发明授权

US09410241B2 Method for separating surface layer or growth layer of diamond 有权
标题翻译：分离金刚石表面层或生长层的方法
公开(公告)号：US09410241B2
公开(公告)日：2016-08-09
申请号：US12439887
申请日：2007-08-31
申请人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
发明人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
IPC分类号： C23C16/01 , C23C16/27 , C23C16/56 , C25F3/00 , C30B29/04 , C30B31/22 , C30B33/06
CPC分类号： C23C16/01 , C23C16/27 , C23C16/56 , C25F3/00 , C30B29/04 , C30B31/22 , C30B33/06
摘要： The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method. The invention is applicable to various single-crystal and polycrystal diamonds. More specifically, even with a large single-crystal diamond, a portion of the single-crystal diamond can be efficiently separated in a reusable form in a relatively short period of time.
摘要翻译：本发明提供一种用于分离金刚石的表面层的方法，其包括将离子注入金刚石以在金刚石的表面附近形成非金刚石层; 以及通过在电解液中跨越电极施加交流电压来蚀刻金刚石中的非金刚石层; 以及分离金刚石生长层的方法，其还包括根据上述方法在形成非金刚石层之后通过气相合成法生长金刚石的步骤。本发明适用于各种单晶和多晶钻石。更具体地，即使使用大的单晶金刚石，一部分单晶金刚石可以在相对较短的时间内以可重复使用的形式被有效地分离。

4. 发明授权

US08940266B2 Large diamond crystal substrates and methods for producing the same 有权
标题翻译：大型金刚石晶体基板及其制造方法
公开(公告)号：US08940266B2
公开(公告)日：2015-01-27
申请号：US12646163
申请日：2009-12-23
申请人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
发明人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
IPC分类号： B01J3/06 , C30B33/06 , C30B23/00 , B01J19/08 , C23C14/00 , C30B29/04 , C30B33/00 , C01B31/06 , C30B25/00
CPC分类号： C30B29/04 , C01B32/25 , C01B32/28 , C30B23/00 , C30B25/00 , C30B33/00 , C30B33/06
摘要： The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
摘要翻译：本发明提供一种用于制造大型单晶金刚石基板的方法，包括以下步骤：制备从相同的母基板分离的多个单晶金刚石层，将单晶金刚石层以马赛克图案放置在平面支撑，并通过气相合成法在单晶金刚石层的与母体基底分离的面上生长单晶金刚石。根据本发明的方法，可以相对容易地制造面积大，质量好的马赛克单晶金刚石。

5. 发明授权

US06169288A Laser ablation type ion source 失效
标题翻译：激光烧蚀型离子源
公开(公告)号：US06169288A
公开(公告)日：2001-01-02
申请号：US09159510
申请日：1998-09-24
申请人： Yuji Horino , Toshiyuki Mihara , Akiyoshi Chayahara , Atsushi Kinomura , Nobuteru Tsubouchi
发明人： Yuji Horino , Toshiyuki Mihara , Akiyoshi Chayahara , Atsushi Kinomura , Nobuteru Tsubouchi
IPC分类号： H01J37317
CPC分类号： H01J37/08 , H01J49/161 , H01J2237/31701
摘要： A laser ablation type ion source including vacuum chambers provided with a retaining section for holding a solid raw material for the generation of ions, an ion extracting electrode, an ion accelerating electrode, and a mass spectrograph for ion separation. The ion source also includes a laser beam source for injecting a laser beam of high density into the vacuum chamber.
摘要翻译：一种激光烧蚀型离子源，包括设置有用于保持用于产生离子的固体原料的保持部的真空室，离子提取电极，离子加速电极和用于离子分离的质谱仪。离子源还包括用于将高密度激光束注入真空室的激光束源。

6. 发明授权

US5763340A Method for production of SiO.sub.2 glass material having regions changed in light refractive index and SiO.sub.2 glass material produced by the method 失效
$Method for production of SiO.sub.2 glass material having regions changed in light refractive index and SiO.sub.2 glass material produced by the method$
标题翻译：制造具有光折射率变化的SiO 2玻璃材料的方法和通过该方法制造的SiO 2玻璃材料
公开(公告)号：US5763340A
公开(公告)日：1998-06-09
申请号：US783041
申请日：1997-01-14
申请人： Junji Nishii , Kohei Fukumi , Akiyoshi Chayahara , Kanenaga Fujii , Hiroshi Yamanaka
发明人： Junji Nishii , Kohei Fukumi , Akiyoshi Chayahara , Kanenaga Fujii , Hiroshi Yamanaka
IPC分类号： G02B1/00 , C03C3/06 , C03C4/04 , C03C21/00 , C03C23/00 , G02B6/12 , G02B6/13 , G02B6/134 , C03C13/04
CPC分类号： G02B6/13 , C03C23/002 , C03C23/0055 , C03C3/06 , G02B6/1347 , C03C2201/31 , C03C2203/50 , C03C2203/52 , G02B2006/12035 , G02B2006/12169
摘要： A method for producing a SiO.sub.2 glass material having regions changed in light refractive index is provided which comprises implanting at least 5.times.10.sup.19 Ge ions/cm.sup.3 into a SiO.sub.2 glass substrate, heat-treating the substrate at a temperature exceeding 300.degree. C., and exposing the substrate to an ultraviolet light. Also provided is a SiO.sub.2 glass material produced by the method.
摘要翻译：提供了一种制备具有光折射率变化区域的SiO 2玻璃材料的方法，其包括将至少5×10 19 Ge离子/ cm 3注入到SiO 2玻璃基板中，在超过300℃的温度下对基板进行热处理，底物到紫外线。还提供了通过该方法制备的SiO 2玻璃材料。

7. 发明申请

US20100206217A1 METHOD FOR SEPARATING SURFACE LAYER OR GROWTH LAYER OF DIAMOND 有权
标题翻译：用于分离钻石表面层或生长层的方法
公开(公告)号：US20100206217A1
公开(公告)日：2010-08-19
申请号：US12439887
申请日：2007-08-31
申请人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
发明人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
IPC分类号： C30B25/00 , C25F3/02
CPC分类号： C23C16/01 , C23C16/27 , C23C16/56 , C25F3/00 , C30B29/04 , C30B31/22 , C30B33/06
摘要： The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method.The invention is applicable to various single-crystal and polycrystal diamonds. More specifically, even with a large single-crystal diamond, a portion of the single-crystal diamond can be efficiently separated in a reusable form in a relatively short period of time.
摘要翻译：本发明提供一种用于分离金刚石的表面层的方法，其包括将离子注入金刚石以在金刚石的表面附近形成非金刚石层; 以及通过在电解液中跨越电极施加交流电压来蚀刻金刚石中的非金刚石层; 以及分离金刚石生长层的方法，其还包括根据上述方法在形成非金刚石层之后通过气相合成法生长金刚石的步骤。本发明适用于各种单晶和多晶钻石。更具体地，即使使用大的单晶金刚石，一部分单晶金刚石可以在相对较短的时间内以可重复使用的形式被有效地分离。

8. 发明申请

US20100166636A1 LARGE DIAMOND CRYSTAL SUBSTRATES AND METHODS FOR PRODUCING THE SAME 有权
标题翻译：大型金刚石晶体基板及其制造方法
公开(公告)号：US20100166636A1
公开(公告)日：2010-07-01
申请号：US12646163
申请日：2009-12-23
申请人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
发明人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
IPC分类号： C01B31/06 , C30B33/06
CPC分类号： C30B29/04 , C01B32/25 , C01B32/28 , C30B23/00 , C30B25/00 , C30B33/00 , C30B33/06
摘要： The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
摘要翻译：本发明提供一种用于制造大型单晶金刚石基板的方法，包括以下步骤：制备从相同的母基板分离的多个单晶金刚石层，将单晶金刚石层以马赛克图案放置在平面支撑，并通过气相合成法在单晶金刚石层的与母体基底分离的面上生长单晶金刚石。根据本发明的方法，可以相对容易地制造面积大，质量好的马赛克单晶金刚石。

9. 发明申请

US20100000967A1 REMOVAL METHOD OF SURFACE DAMAGE OF SINGLE CRYSTAL DIAMOND 审中-公开
标题翻译：单晶金刚石表面损伤的去除方法
公开(公告)号：US20100000967A1
公开(公告)日：2010-01-07
申请号：US12336841
申请日：2008-12-17
申请人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
发明人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
IPC分类号： B44C1/22
CPC分类号： H01L21/0405
摘要： The present invention provides a process for removing surface damage of a single-crystal diamond, which comprises implanting ions into a single-crystal diamond to form a non-diamond layer near a surface of the diamond, graphitizing the non-diamond layer, and removing a surface layer by etching. According to the invention, the surface damage can be removed or reduced without increasing the surface roughness of a single crystal diamond.
摘要翻译：本发明提供一种去除单晶金刚石的表面损伤的方法，其包括将离子注入到单晶金刚石中以在金刚石的表面附近形成非金刚石层，使非金刚石层石墨化，并除去通过蚀刻表面层。根据本发明，可以除去或减少表面损伤，而不增加单晶金刚石的表面粗糙度。

10. 发明申请

US20060266279A1 Method of producing single crystal 有权
标题翻译：生产单晶的方法
公开(公告)号：US20060266279A1
公开(公告)日：2006-11-30
申请号：US11274148
申请日：2005-11-16
申请人： Yoshiaki Mokuno , Akiyoshi Chayahara , Yuji Horino , Naoji Fujimori
发明人： Yoshiaki Mokuno , Akiyoshi Chayahara , Yuji Horino , Naoji Fujimori
IPC分类号： C30B7/00 , C30B21/02 , C30B28/06
CPC分类号： C30B25/20 , C30B7/005 , C30B29/04 , Y10S117/902
摘要： The present invention provides a method for producing a single crystals by preferential epitaxial growth of {100} face, the method comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100} face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. The present invention further provides a method for producing a single-crystal diamond wherein used is a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is apart from the outer peripheral portion of the holder, and has a recessed shape. According to the present invention, a method for producing a single crystal by epitaxial growth, in particular a method for producing a single-crystal diamond using gaseous phase synthetic methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.
摘要翻译：本发明提供了通过{100}面的优先外延生长来制造单晶的方法，该方法包括以下步骤：（1）在单晶{100}衬底上生长晶体; （2）在生长晶体的侧面上形成平行于生长方向上与{100}面不同的{100}面的表面，和（3）在所形成的{100}表面上生长晶体; 并且步骤（2）和（3）执行一次或多于一次。本发明还提供一种用于制造单晶金刚石的方法，其中使用的是具有晶体保持部分的单晶金刚石的金属保持器，所述晶体保持部分在保持器的外周部分上方升高，与外周部分并具有凹陷形状。根据本发明，通过外延生长制造单晶的方法，特别是使用气相合成方法制造单晶金刚石的方法使得能够在较短时间内生产大型单晶金刚石成本。

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