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1. 发明授权

US5382531A Method for continuously manufacturing a semiconductor device 失效
标题翻译：连续制造半导体器件的方法
公开(公告)号：US5382531A
公开(公告)日：1995-01-17
申请号：US97046
申请日：1993-07-27
申请人： Yasushi Fujioka , Takashi Kurokawa , Masahiro Kanai , Masafumi Sano , Takehito Yoshino , Yuzo Kohda
发明人： Yasushi Fujioka , Takashi Kurokawa , Masahiro Kanai , Masafumi Sano , Takehito Yoshino , Yuzo Kohda
IPC分类号： H01L21/205 , C23C16/507 , C23C16/54 , H01L31/04 , H01L31/18 , C23C16/50
CPC分类号： C23C16/507 , C23C16/545 , Y10S438/907
摘要： An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. An enough long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semiconductor layer of a conductivity type which is needed in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
摘要翻译：设备连续制造半导体器件。多个辉光放电区域由气门连接。沿着基板顺序地穿透辉光放电区域的路径布置具有期望宽度的足够长的带状基板。带状基板沿纵向方向连续输送，同时沉积在每个辉光放电区域中所需的导电类型的半导体层，从而连续制造具有半导体结的器件。多个可旋转辊布置在气门的狭缝形分隔通道中，以便在旋转辊的同时支撑带状基底的后表面。

2. 发明授权

US5266116A Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers 失效
标题翻译：用于连续制造半导体器件的辉光放电装置，其包括带开槽辊的气门
公开(公告)号：US5266116A
公开(公告)日：1993-11-30
申请号：US858410
申请日：1992-03-27
申请人： Yasushi Fujioka , Takashi Kurokawa , Masahiro Kanai , Masafumi Sano , Takehito Yoshino , Yuzo Kohda
发明人： Yasushi Fujioka , Takashi Kurokawa , Masahiro Kanai , Masafumi Sano , Takehito Yoshino , Yuzo Kohda
IPC分类号： H01L21/205 , C23C16/507 , C23C16/54 , H01L31/04 , C23C16/50
CPC分类号： C23C16/507 , C23C16/545 , Y10S438/907
摘要： An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
摘要翻译：设备连续制造半导体器件。多个辉光放电区域由气门连接。沿着基板顺序地穿透辉光放电区域的路径布置具有期望宽度的足够长的带状基板。带状基板沿长度方向连续输送，同时在每个辉光放电区域中沉积导电类型的半导体层，从而连续制造具有半导体结的器件。多个可旋转辊布置在气门的狭缝形分隔通道中，以便在旋转辊的同时支撑带状基底的后表面。

3. 发明授权

US4981766A Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material 失效
标题翻译：具有由含铝无机材料制成的下层和由非单晶硅材料制成的上层构成的多层光接收层的受光部件
公开(公告)号：US4981766A
公开(公告)日：1991-01-01
申请号：US403396
申请日：1989-09-06
申请人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
发明人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
IPC分类号： G03G5/082
CPC分类号： G03G5/08214
摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

4. 发明授权

US4906542A Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material 失效
标题翻译：具有由含铝无机材料制成的下层和由非单晶硅材料制成的上层构成的多层光接收层的光接收元件
公开(公告)号：US4906542A
公开(公告)日：1990-03-06
申请号：US183998
申请日：1988-04-20
申请人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
发明人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
IPC分类号： G03G5/082
CPC分类号： G03G5/08214
摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

5. 发明授权

US4906543A Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material 失效
公开(公告)号：US4906543A
公开(公告)日：1990-03-06
申请号：US184872
申请日：1988-04-21
申请人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
发明人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
IPC分类号： G03G5/082
CPC分类号： G03G5/08228
摘要： There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X), and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.

6. 发明授权

US4886723A Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material 失效
标题翻译：具有由含铝无机材料制成的下层和由非单晶硅材料制成的上层构成的多层光接收层的光接收元件
公开(公告)号：US4886723A
公开(公告)日：1989-12-12
申请号：US182156
申请日：1988-04-15
申请人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
发明人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
IPC分类号： G03G5/082
CPC分类号： G03G5/08228
摘要： There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X). The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.
摘要翻译：提供了一种用于电子照相的改进的光接收元件，其由铝支架和在所述铝支架上形成的具有光电导性的多层光接收层构成，其中所述多层光接收层由与所述支撑体接触的下层和所述下层由至少含有铝原子（Al），硅原子（Si）和氢原子（H）的无机材料制成，并且其中所述铝原子（Al），硅原子（ Si）和氢原子（H）跨越层厚度不均匀地分布，所述上层由以硅原子（Si）为基体和氢原子（H）或卤素（H）中的至少一个的非单一材料制成原子（X）。用于电子照相的光接收元件具有出色的电特性，光学特性，光导特性，耐久性，图像特性和对使用环境的适应性。

7. 发明授权

US4882251A Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material 失效
标题翻译：具有由含铝无机材料制成的下层和由非单晶硅材料制成的上层构成的多层光接收层的光接收元件
公开(公告)号：US4882251A
公开(公告)日：1989-11-21
申请号：US183701
申请日：1988-04-19
申请人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
发明人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
IPC分类号： G03G5/082
CPC分类号： G03G5/08228
摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing atoms to control conductivity in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.
摘要翻译：一种由铝支架和形成在铝支架上形成的具有光电导性的多层光接收层构成的电子摄影用光接收元件，其中多层光接收层由与支撑体接触的下层和上层组成，下层由至少含有铝原子（Al），硅原子（Si）和氢原子（H）的无机材料制成，并且其中铝原子（Al），硅原子（Si）和氢原子（H ）不均匀地分布在层厚度上，上层由以硅原子（Si）为基体和氢原子（H）或卤素原子（X）中的至少一个组成的非单晶材料制成，并含有原子以控制与下层相邻的层区域中的导电性。用于电子照相的光接收元件可以克服所有上述问题，并且表现出非常优异的电性能，光学性能，光电导性，耐久性，图像特性和使用的环境性质。

8. 发明授权

US5573601A Pin amorphous silicon photovoltaic element with counter-doped intermediate layer 失效
标题翻译：具有反掺杂中间层的非晶硅光电元件引脚
公开(公告)号：US5573601A
公开(公告)日：1996-11-12
申请号：US323063
申请日：1994-10-14
申请人： Keishi Saitoh , Tatsuyuki Aoike , Yasushi Fujioka , Masafumi Sano , Mitsuyuki Niwa
发明人： Keishi Saitoh , Tatsuyuki Aoike , Yasushi Fujioka , Masafumi Sano , Mitsuyuki Niwa
IPC分类号： H01L31/0288 , H01L31/0392 , H01L31/075
CPC分类号： H01L31/1804 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/0747 , H01L31/075 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A pin type photovoltaic element having an electroconductive substrate and a cell stacked with an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor, all composed of a non-single crystal material containing silicon, and featuring an intermediate layer. The intermediate layer composed of non-single material containing silicon atoms as the matrix and atoms of elements belonging to Group IIIA and VA of the periodic table is between the i-type conductor layer and the p-type conductor layer or the n-type semiconductor layer. The intermediate layer may contain carbon atoms and/or germanium atoms.
摘要翻译：具有导电性基板的pin型光电元件和层叠有n型半导体层，i型半导体层和p型半导体的单元，全部由含有硅的非单晶材料构成，具有中间体层。由含有硅原子的非单一材料构成的中间层和属于周期表的IIIA族和VA族的元素的原子在i型导体层和p型导体层或n型半导体之间层。中间层可以含有碳原子和/或锗原子。

9. 发明授权

US5397395A Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same 失效
标题翻译：通过微波PCVD连续形成大面积功能沉积膜的方法及其设备
公开(公告)号：US5397395A
公开(公告)日：1995-03-14
申请号：US295487
申请日：1994-08-25
申请人： Masafumi Sano , Masahiro Kanai
发明人： Masafumi Sano , Masahiro Kanai
IPC分类号： H01L21/205 , C23C16/50 , C23C16/511 , C23C16/54 , H01L31/04 , C23C16/48
CPC分类号： C23C16/511 , C23C16/545
摘要： A method and apparatus for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.
摘要翻译：一种通过微波PCVD法形成大面积功能沉积膜的方法和装置，其通过在长度方向连续移动细长构件，并形成柱状成膜室，其侧壁是移动细长构件的中间部分。沉积的成膜原料气体经由气体供给装置引入成膜空间。在成膜空间中的微波等离子体通过从微波施加器发射微波能量而产生，同时连续地引入原料气体的微波等离子体，移动由接触位置的介电材料制成的可动片材微波引入开口和微波引入开口的表面。然后可以在构成侧壁并被连续移动的细长构件的表面上形成沉积膜，由细长构件构成的侧壁暴露于微波等离子体。

10. 发明授权

US5126169A Process for forming a deposited film from two mutually reactive active species 失效
标题翻译：从两种相互反应的活性物质形成沉积膜的方法
公开(公告)号：US5126169A
公开(公告)日：1992-06-30
申请号：US639410
申请日：1991-01-10
申请人： Shunichi Ishihara , Hisanori Tsuda , Masahiro Kanai , Masafumi Sano
发明人： Shunichi Ishihara , Hisanori Tsuda , Masahiro Kanai , Masafumi Sano
IPC分类号： C23C16/452 , G03G5/082
CPC分类号： C23C16/452 , G03G5/08278
摘要： A process for forming a deposited film on a substrate which comprises introducing plural kinds of precursors formed in activation spaces (B), as starting materials for a deposited film and an active species formed in an activation space (C) which is to react with at least two kinds among said plural kinds of precursors respectively at different reaction rates into a deposition space (A) for forming a deposited film on a substrate, wherein the precursor having a property of reacting with said active species at a lower reaction rate is mixed with said active species at an upper stream position as compared with the precursor having a property of reacting with said active species at a higher reaction rate.
摘要翻译：一种在基板上形成沉积膜的方法，包括引入在活化空间（B）中形成的多种前体，作为沉积膜的起始材料和形成于活化空间（C）中的活性物质，活化空间（C）所述多种前体中的至少两种前体分别以不同的反应速率转化成用于在基底上形成沉积膜的沉积空间（A），其中具有与所述活性物质以较低反应速率反应的性质的前体与所述活性物质在上游位置与前体相比具有与所述活性物质以更高反应速率反应的性质。

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