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1. 发明授权

US06690079B2 Light-receiving device 有权
标题翻译：光接收装置
公开(公告)号：US06690079B2
公开(公告)日：2004-02-10
申请号：US10121672
申请日：2002-04-15
申请人： Yasushi Fujimura , Hiroshi Yano , Tsukuru Katsuyama
发明人： Yasushi Fujimura , Hiroshi Yano , Tsukuru Katsuyama
IPC分类号： H01L3100
CPC分类号： H01L31/105 , H01L31/103 , H01L31/109
摘要： The invention relates to a back-illuminated type light-receiving device. The light-receiving device can be used for a wide frequency range. The device has a structure in which a p-type semiconductor layer and an n-type semiconductor layer are successively stacked on the front side of the semiconductor substrate. A light-receiving portion is provided on the back side of the substrate. A dopant diffusion suppressing layer may be provided between the substrate and the p-type layer.
摘要翻译：本发明涉及背照式光接收装置。光接收装置可用于较宽的频率范围。该器件具有其中p型半导体层和n型半导体层依次层叠在半导体衬底的正面上的结构。光接收部设置在基板的背面。可以在衬底和p型层之间设置掺杂剂扩散抑制层。

2. 发明申请

US20050117831A1 Optical waveguide module 失效
标题翻译：光波导模块
公开(公告)号：US20050117831A1
公开(公告)日：2005-06-02
申请号：US10501512
申请日：2003-01-15
申请人： Takeo Komiya , Takashi Sasaki , Yasushi Fujimura , Tsukuru Katsuyama , Naoyuki Yamabayashi
发明人： Takeo Komiya , Takashi Sasaki , Yasushi Fujimura , Tsukuru Katsuyama , Naoyuki Yamabayashi
IPC分类号： G02B6/12 , G02B6/36 , G02B6/42
CPC分类号： G02B6/3636 , G02B6/3652 , G02B6/42 , G02B6/4212 , G02B6/4214 , G02B6/4246 , G02B6/4249 , G02B2006/12104 , G02B2006/12109
摘要： In a planar optical waveguide type optical circuit 1, a reflection filter 4 is installed on the inside of a inclined groove 3, which is formed so as to cross optical waveguides 2n. Reflected light from the reflection filter 4 is detected by photodetectors 61n of a photodetector array 60, thereby the optical intensity of the signal light is monitored. As for the photodetectors 61n, there is adopted a constitution such that a sub-mounting substrate 70 is disposed at the top side of the optical circuit 1 to hold the photodetector array 60 with a photodetector mounting face 71, which is inclined at an angle α (0°
摘要翻译：在平面光波导型光电路1中，反射滤光器4安装在倾斜槽3的内部，该倾斜槽3形成为与光波导2 N交叉。来自反射滤光器4的反射光由光电检测器阵列60的光电检测器61N检测，从而监测信号光的光强度。对于光电检测器61N，采用以下结构：副安装基板70设置在光电路1的顶侧，以用光电检测器安装面71保持光电检测器阵列60 ，其相对于光电路1的顶表面以α（0°<α<90°）的角度倾斜，使得来自反射滤光器4的反射光入射到光电检测器的光入射面63上在光电检测器阵列60中以预定的角度phi。结果，获得能够正确监视光强度而不管信号光的偏振状态的光波导模块。

3. 发明授权

US07149375B2 Optical waveguide module 失效
标题翻译：光波导模块
公开(公告)号：US07149375B2
公开(公告)日：2006-12-12
申请号：US10501512
申请日：2003-01-15
申请人： Takeo Komiya , Takashi Sasaki , Yasushi Fujimura , Tsukuru Katsuyama , Naoyuki Yamabayashi
发明人： Takeo Komiya , Takashi Sasaki , Yasushi Fujimura , Tsukuru Katsuyama , Naoyuki Yamabayashi
IPC分类号： G02B6/12 , G02B6/42 , G02B6/26
CPC分类号： G02B6/3636 , G02B6/3652 , G02B6/42 , G02B6/4212 , G02B6/4214 , G02B6/4246 , G02B6/4249 , G02B2006/12104 , G02B2006/12109
摘要： A planar optical waveguide is formed with an optical circuit having an inclined groove. A reflection filter is installed on the inside of the inclined groove 3 crossing a plurality of optical waveguides. Reflected light from the reflection filter is detected by an array of photodetectors to monitor the optical intensity of the signal light. The photodetector array is held by a sub-mounting substrate disposed at the top side of the optical circuit so that a mounting face of the photodetector array is inclined at an angle a (0°
摘要翻译：平面光波导形成有具有倾斜槽的光电路。反射滤波器安装在与多个光波导相交的倾斜槽3的内侧。来自反射滤光器的反射光由光电检测器阵列检测，以监测信号光的光强度。光电检测器阵列由设置在光电路的顶侧的副安装基板保持，使得光电检测器阵列的安装面相对于顶表面倾斜成角度α（0°<α<90°）使得来自反射滤光器的反射光以预定角度phi入射到光电探测器的光入射面上。无论信号光的偏振状态如何，光波导模块都能够正确地监视光强度。

4. 发明授权

US07405421B2 Optical integrated device 失效
标题翻译：光学集成器件
公开(公告)号：US07405421B2
公开(公告)日：2008-07-29
申请号：US11089019
申请日：2005-03-25
申请人： Jun-ichi Hashimoto , Tsukuru Katsuyama , Kenji Koyama
发明人： Jun-ichi Hashimoto , Tsukuru Katsuyama , Kenji Koyama
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/131 , G02B2006/121 , H01S5/026 , H01S5/162 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/3434
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译：本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。本发明的光集成器件包括GaAs衬底，第一和第二覆层，以及由第一和第二覆层夹持的有源层。这些层设置在GaAs衬底上。 GaAs衬底提供第一区域和第二区域。有源层包括设置在第一区域上的第一有源层和设置在GaAs衬底的第二区域上的第二有源层。第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第二有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。

5. 发明授权

US07208774B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07208774B2
公开(公告)日：2007-04-24
申请号：US11152789
申请日：2005-06-15
申请人： Jun-ichi Hashimoto , Tsukuru Katsuyama
发明人： Jun-ichi Hashimoto , Tsukuru Katsuyama
IPC分类号： H01L29/24
CPC分类号： H01S5/227 , H01L33/06 , H01S5/2004 , H01S5/305 , H01S5/3211
摘要： In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.
摘要翻译：在半导体光学器件中，在GaAs的表面上设置第一导电型半导体区域。第一导电型半导体区域具有第一区域和第二区域。有源层设置在第一导电类型半导体区域的第一区域上。活性层具有一对侧表面。第二导电型半导体区域设置在有源层的侧面和顶部以及第一导电类型半导体区域的第二区域上。第一导电型半导体区域的带隙能量大于有源层的带隙能量。第二导电型半导体区域的带隙能量大于有源层的带隙能量。第一导电型半导体区域和第二导电型半导体区域的第二区域构成pn结。

6. 发明申请

US20060060876A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20060060876A1
公开(公告)日：2006-03-23
申请号：US11232242
申请日：2005-09-22
申请人： Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01L33/00
CPC分类号： H01S5/18308 , H01L33/02 , H01L33/105 , H01S5/18341 , H01S5/18358 , H01S5/3211 , H01S5/3235 , H01S2301/173
摘要： A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer. The second region of the first semiconductor portion of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. A bandgap energy of the potential adjusting semiconductor layer is different from bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region.
摘要翻译：半导体光学器件包括第一导电类型半导体区域，设置在第一导电类型半导体区域的第二半导体部分上的有源层，在有源层的侧面和顶部上的第二导电类型半导体区域，第二导电类型半导体区域半导体部分和第一导电类型半导体区域的第一半导体部分的第二区域，设置在第一导电类型半导体区域的第二半导体部分和有源层之间的电位调节半导体层，以及第一和第二分布布拉格反射器设置有第一导电型半导体区域，有源层和第二导电型半导体区域的部分。第一导电型半导体区域和第二导电型半导体区域的带隙能量大于有源层的带隙能量。第一导电型半导体区域和第二导电型半导体区域的第一半导体部分的第二区域构成pn结。电位调整用半导体层的带隙能不同于第一导电型半导体区域和第二导电型半导体区域的带隙能量。

7. 发明授权

US07613217B2 Semiconductor surface emitting device 失效
标题翻译：半导体表面发射器件
公开(公告)号：US07613217B2
公开(公告)日：2009-11-03
申请号：US12071170
申请日：2008-02-15
申请人： Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/2209 , H01S5/222 , H01S5/3211 , H01S5/32366
摘要： This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.
摘要翻译：该表面发射半导体器件1包括第一导电类型半导体区域，有源层，第二导电类型半导体层和电流块半导体区域。第一导电型半导体区域设置在由GaAs半导体制成的表面上。有源层设置在第一导电类型半导体区域上。活性层具有侧表面。第二导电类型半导体层设置在有源层上。第二导电型半导体层具有侧面。当前块半导体区域设置在有源层的侧表面和第二导电类型半导体层的侧表面上。有源层由至少包含氮元素作为V族元素的III-V族化合物半导体制成。

8. 发明授权

US07356063B2 Semiconductor surface emitting device 有权
标题翻译：半导体表面发射器件
公开(公告)号：US07356063B2
公开(公告)日：2008-04-08
申请号：US10822142
申请日：2004-04-12
申请人： Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/2209 , H01S5/222 , H01S5/3211 , H01S5/32366
摘要： This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.
摘要翻译：该表面发射半导体器件1包括第一导电类型半导体区域，有源层，第二导电类型半导体层和电流块半导体区域。第一导电型半导体区域设置在由GaAs半导体制成的表面上。有源层设置在第一导电类型半导体区域上。活性层具有侧表面。第二导电类型半导体层设置在有源层上。第二导电型半导体层具有侧面。当前块半导体区域设置在有源层的侧表面和第二导电类型半导体层的侧表面上。有源层由至少包含氮元素作为V族元素的III-V族化合物半导体制成。

9. 发明授权

US07323722B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07323722B2
公开(公告)日：2008-01-29
申请号：US11181024
申请日：2005-07-14
申请人： Jun-ichi Hashimoto , Tsukuru Katsuyama
发明人： Jun-ichi Hashimoto , Tsukuru Katsuyama
IPC分类号： H01L29/221
CPC分类号： H01S5/30
摘要： In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.
摘要翻译：在半导体光学器件中，在GaAs的表面上设置第一导电型半导体区域。第一导电型半导体区域具有第一区域和第二区域。有源层设置在第一导电类型半导体区域的第一区域上。活性层具有一对侧表面。第二导电型半导体区域设置在有源层的侧面和顶部以及第一导电类型半导体区域的第二区域上。第一导电型半导体区域的带隙能量大于有源层的带隙能量。第二导电型半导体区域的带隙能量大于有源层的带隙能量。第一导电型半导体区域和第二导电型半导体区域的第二区域构成pn结。

10. 发明申请

US20060060875A1 Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US20060060875A1
公开(公告)日：2006-03-23
申请号：US11230926
申请日：2005-09-21
申请人： Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/105 , H01L33/02 , H01L33/32
摘要： In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. The first distributed Bragg reflector portion includes first distributed Bragg reflector layers and second distributed Bragg reflector layers which are arranged alternately. The second distributed Bragg reflector portion includes third distributed Bragg reflector layers and fourth distributed Bragg reflector layers which are arranged alternately. The first conductive type semiconductor region, the active layer and the second conductive type semiconductor region are provided between the first distributed Bragg reflector portion and the second distributed Bragg reflector layers.
摘要翻译：在半导体光学器件中，第一导电型半导体区域包括第一半导体部分和第二半导体部分。第一半导体部分的第一和第二区域沿预定平面布置。第二半导体部分设置在第一半导体部分的第一区域上。有源层设置在第一导电类型半导体区域的第二半导体部分上。第二导电型半导体区域设置在第一导电型半导体区域的第一半导体部分的第二区域上。第一导电型半导体区域的第二半导体部分的侧面，有源层的顶部和侧面，第一导电型半导体区域的第二区域和第二导电类型半导体区域构成pn结。第一分布布拉格反射器部分包括交替布置的第一分布布拉格反射器层和第二分布布拉格反射器层。第二分布布拉格反射器部分包括交替布置的第三分布布拉格反射器层和第四分布布拉格反射器层。第一导电型半导体区域，有源层和第二导电类型半导体区域设置在第一分布布拉格反射器部分和第二分布布拉格反射器层之间。

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