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1. 发明申请

US20060009008A1 Method for the laser processing of a wafer 审中-公开
标题翻译：晶圆激光加工方法
公开(公告)号：US20060009008A1
公开(公告)日：2006-01-12
申请号：US11175155
申请日：2005-07-07
申请人： Yasuomi Kaneuchi , Yukio Morishige , Satoshi Genda , Satoshi Kobayashi , Toshio Tsuchiya , Ryugo Oba
发明人： Yasuomi Kaneuchi , Yukio Morishige , Satoshi Genda , Satoshi Kobayashi , Toshio Tsuchiya , Ryugo Oba
IPC分类号： H01L21/301 , B23K26/38
CPC分类号： H01L21/6836 , B23K26/03 , B23K26/032 , B23K26/0622 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/67092 , H01L21/78 , H01L2221/68327
摘要： A method for the laser processing of a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, the method comprising applying a pulse laser beam along streets for sectioning the plurality of devices to form grooves along the streets, wherein a pulse width of the pulse laser beam is set to 100 to 1,000 ns.
摘要翻译：一种用于激光加工晶片的方法，所述晶片具有由基板前表面上的绝缘膜和功能膜构成的层叠体构成的多个器件，所述方法包括：沿着街道施加脉冲激光束，多个装置沿着街道形成凹槽，其中脉冲激光束的脉冲宽度设定为100至1,000ns。

2. 发明授权

US07601616B2 Wafer laser processing method 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US07601616B2
公开(公告)日：2009-10-13
申请号：US11826911
申请日：2007-07-19
申请人： Hiroshi Morikazu , Ryugo Oba , Yukio Morishige , Toshio Tsuchiya , Koji Yamaguchi
发明人： Hiroshi Morikazu , Ryugo Oba , Yukio Morishige , Toshio Tsuchiya , Koji Yamaguchi
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/0622 , B23K26/40 , B23K2103/50
摘要： A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.
摘要翻译：一种晶片激光加工方法，用于沿着街道施加脉冲激光束，沿着街道形成沟槽，用于将由具有由绝缘膜和功能膜构成的层叠体构成的多个器件的晶片的多个器件分隔开，衬底的前表面，其中脉冲激光束被设置为具有150kHz至100MHz的重复频率和5至25J / m的每单位长度的能量。

3. 发明申请

US20080020548A1 Wafer laser processing method 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US20080020548A1
公开(公告)日：2008-01-24
申请号：US11826911
申请日：2007-07-19
申请人： Hiroshi Morikazu , Ryugo Oba , Yukio Morishige , Toshio Tsuchiya , Koji Yamaguchi
发明人： Hiroshi Morikazu , Ryugo Oba , Yukio Morishige , Toshio Tsuchiya , Koji Yamaguchi
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , B23K26/0622 , B23K26/40 , B23K2103/50
摘要： A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.
摘要翻译：一种晶片激光加工方法，用于沿着街道施加脉冲激光束，沿着街道形成沟槽，用于将由具有由绝缘膜和功能膜构成的层叠体构成的多个器件的晶片的多个器件分隔开，衬底的前表面，其中脉冲激光束被设置为具有150kHz至100MHz的重复频率和5至25J / m的每单位长度的能量。

4. 发明授权

US07179723B2 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US07179723B2
公开(公告)日：2007-02-20
申请号：US10986371
申请日：2004-11-12
申请人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
发明人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , B23K26/18 , B23K26/364 , H01L21/67092
摘要： A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
摘要翻译：一种用于通过将激光束施加到预定区域来处理晶片的激光束处理方法，包括以下步骤：在晶片的待处理表面上形成吸收激光束的树脂膜; 通过树脂膜将激光束施加到待加工晶片的表面; 并且在激光束施加步骤之后去除树脂膜。

5. 发明申请

US20050106782A1 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US20050106782A1
公开(公告)日：2005-05-19
申请号：US10986371
申请日：2004-11-12
申请人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
发明人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
IPC分类号： B23K26/00 , B23K26/18 , B23K26/40 , B23K101/40 , H01L21/00 , H01L21/301 , H01L21/44 , H01L21/78
CPC分类号： H01L21/78 , B23K26/18 , B23K26/364 , H01L21/67092
摘要： A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
摘要翻译：一种用于通过将激光束施加到预定区域来处理晶片的激光束处理方法，包括以下步骤：在晶片的待处理表面上形成吸收激光束的树脂膜; 通过树脂膜将激光束施加到待加工晶片的表面; 并且在激光束施加步骤之后去除树脂膜。

6. 发明申请

US20080003708A1 Method of processing sapphire substrate 审中-公开
标题翻译：处理蓝宝石衬底的方法
公开(公告)号：US20080003708A1
公开(公告)日：2008-01-03
申请号：US11819673
申请日：2007-06-28
申请人： Hitoshi Hoshino , Koji Yamaguchi , Kenji Furuta , Hiroshi Morikazu , Ryugo Oba , Yukio Morishige
发明人： Hitoshi Hoshino , Koji Yamaguchi , Kenji Furuta , Hiroshi Morikazu , Ryugo Oba , Yukio Morishige
IPC分类号： H01L21/30
CPC分类号： H01L33/0095 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011
摘要： To provide a method of processing a sapphire substrate, where reduction in luminance of light emitting devices can be suppressed if a sapphire substrate is divided into individual light emitting devices by irradiation of a laser beam, a pulsed laser beam having a small pulse energy of 0.6 μJ to 10 μJ, and an extremely small pulse width in a range of femto-second is irradiated to the sapphire substrate while a condensing point is positioned within each of regions corresponding to predetermined division lines on the sapphire substrate so that affected zones are formed, thereby the laser beam can be irradiated even at a high peak power density of 4×1013 W/cm2 to 5×1015 W/cm2, consequently each of the affected zones can be formed at only a desired condensing point within the sapphire substrate, and necessary processing can be performed while damage to nitride semiconductors or the sapphire substrate is minimized.
摘要翻译：为了提供一种处理蓝宝石衬底的方法，其中如果通过激光束的照射将蓝宝石衬底分成单独的发光器件，则可以抑制发光器件的亮度降低，脉冲能量为0.6的脉冲激光束在蓝宝石衬底上照射到毫微微秒范围内的非常小的脉冲宽度，同时聚光点位于与蓝宝石衬底上的预定划分线对应的每个区域内，形成影响区域，从而激光束即使在4×10 13 W / cm 2至高达5×10 15 W / cm 2的高峰值功率密度下也能够照射 > 2 ，因此每个受影响的区域可以仅形成在蓝宝石衬底内的期望的凝聚点处，并且可以执行必要的处理，同时对氮化物半导体或蓝宝石衬底的损伤最小化。

7. 发明授权

US08610030B2 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US08610030B2
公开(公告)日：2013-12-17
申请号：US11783190
申请日：2007-04-06
申请人： Ryugo Oba , Hiroshi Morikazu
发明人： Ryugo Oba , Hiroshi Morikazu
IPC分类号： B23K26/02
CPC分类号： B23K26/0853 , B23K26/0736
摘要： A laser beam processing machine comprising a laser beam application means for applying a laser beam to a workpiece held on a chuck table, a processing-feed means, an indexing-feed means, a processing-feed amount detection means for detecting the amount of feed, an indexing-feed amount detection means, and a control means, wherein the condenser constituting the laser beam application means comprises an elliptic spot forming means for forming a focal spot into an elliptic shape and a focal spot turning means for turning the elliptic focal spot on an optical axis at the center thereof; and the control means comprises a storage means for storing the X, Y coordinate values of a processing line formed on the workpiece, obtains the X, Y coordinate values of the current position of a laser beam application position based on detection signals from the processing-feed amount detection means and the indexing-feed amount detection means, and controls the focal spot turning means to ensure that the long axis of the focal spot should follow along the processing line based on the X, Y coordinate values of the detected current position and the X, Y coordinate values of the processing line stored in the storage means.
摘要翻译：一种激光束处理机，包括用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，加工进给装置，分度供给装置，用于检测进给量的加工进给量检测装置，分度供给量检测装置和控制装置，其中构成激光束施加装置的电容器包括用于将焦点形成为椭圆形的椭圆点形成装置和用于转动椭圆焦点的焦斑转动装置在其中心的光轴上; 并且所述控制装置包括用于存储在所述工件上形成的处理线的X，Y坐标值的存储装置，基于来自所述处理对象的检测信号，获得所述激光束施加位置的当前位置的X，Y坐标值，进给量检测装置和分度供给量检测装置，并且控制焦点转动装置，以基于检测到的当前位置的X，Y坐标值，确保焦斑的长轴沿着处理线跟随，存储在存储装置中的处理线的X，Y坐标值。

8. 发明授权

US07897488B2 Dividing method for wafer having film on the front side thereof 有权
标题翻译：在其前侧具有膜的晶片的分割方法
公开(公告)号：US07897488B2
公开(公告)日：2011-03-01
申请号：US12468556
申请日：2009-05-19
申请人： Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
发明人： Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K26/53 , B23K2103/172 , B23K2103/50
摘要： A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.
摘要翻译：一种用于在其前侧分割具有膜的晶片的晶片分割方法。晶片分割方法包括：修改层形成步骤，其沿着街道从其前侧向晶片的基板施加具有透射波长的激光束，使得激光束的焦点设置在基板内部，从而形成沿着每个街道的基板中的改性层，膜分离步骤，沿着每条街道从晶片的前侧向膜施加具有吸收波长的激光束，从而形成用于沿着每条街道分割膜的激光加工槽，后磨削步骤，研磨晶片的基板的背面，从而将晶片的厚度减小到预定厚度;晶片支撑步骤，将晶片附着到支撑在环形框架上的切割带;以及晶片通过扩大切割胶带将外力施加到晶片从而沿着每个街道破裂晶片的断裂步骤。

9. 发明申请

US20060148210A1 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US20060148210A1
公开(公告)日：2006-07-06
申请号：US11324327
申请日：2006-01-04
申请人： Kenji Furuta , Ryugo Oba
发明人： Kenji Furuta , Ryugo Oba
IPC分类号： H01L21/78
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K26/364 , B23K2101/40 , H01L21/78
摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the condenser of the laser beam application means comprises a first prism for dividing the laser beam oscillated from the laser beam oscillation means into a first laser beam and a second laser beam both having a semicircular section and interchanging the first laser beam and the second laser beam, a second prism for correcting the optical paths of the first laser beam and the second laser beam formed by the first prism to become parallel each other, and an image forming lens for forming respective spots of the first laser beam and the second laser beam whose optical paths have been corrected to be parallel each other by the second prism, into images of spots having linear portions on the outer sides and arcuate portions on the inner sides.
摘要翻译：一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置其中激光束施加装置的冷凝器包括用于将从激光束振荡装置振荡的激光束分成第一激光束的第一棱镜和具有半圆形部分并且将第一激光器交换的第二激光束光束和第二激光束，第二棱镜，用于校正第一激光束的光路和由第一棱镜形成的第二激光束彼此平行;以及成像透镜，用于形成第一激光束的各个点并且其光路已被校正为由第二棱镜彼此平行的第二激光束成为在t上具有线性部分的点的图像他的外侧和内侧的弓形部分。

10. 发明授权

US08049133B2 Laser beam machining apparatus 有权
标题翻译：激光束加工设备
公开(公告)号：US08049133B2
公开(公告)日：2011-11-01
申请号：US12110965
申请日：2008-04-28
申请人： Ryugo Oba , Hiroshi Morikazu
发明人： Ryugo Oba , Hiroshi Morikazu
IPC分类号： B23K26/073
CPC分类号： B23K26/0736 , B23K26/0604 , B23K26/0613 , B23K26/067 , B23K26/0676 , B23K26/0853
摘要： A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens disposed between the beam splitter and the second quarter-wave plate.
摘要翻译：一种激光束加工设备，包括激光束照射单元，所述激光束照射单元包括：用于振荡激光束的激光束振荡器; 由激光束振荡器振荡的激光束通过该分束器被分成第一激光束和第二激光束; 设置在激光束振荡器和分束器之间的旋转半波片; 聚光透镜，设置在第一光路中，用于引导由分束器分裂的第一激光束; 第一反射镜，设置在第二光路中，用于引导由分束器分裂的第二激光束; 设置在分束器和第一反射镜之间的第一四分之一波长板; 第二反射镜，设置在第三光路中，用于将通过第二光路返回到分束器的第二激光束分离; 设置在分束器和第二反射镜之间的第二四分之一波片; 以及设置在分束器和第二四分之一波片之间的柱面透镜。

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