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1. 发明授权

US06708130B1 Product quality information management system 有权
标题翻译：产品质量信息管理系统
公开(公告)号：US06708130B1
公开(公告)日：2004-03-16
申请号：US10111415
申请日：2002-05-06
申请人： Yasuo Yamazaki , Masaki Majima
发明人： Yasuo Yamazaki , Masaki Majima
IPC分类号： G06F1900
CPC分类号： G05B19/41875 , G05B2219/32212 , G06Q10/10 , G07C3/14 , Y02P90/22
摘要： When product inspection results and an inspection frequency for each inspection item are input to the product inspection result input device 1, the inspection items are selected, the presence or absence of product inspection results required for each inspection item is determined, selection of previous product inspection results is performed via the inspection item master 2a and inspection frequency master 2b of the product standard management device 2, and product inspection results for other product batches measured previously are cited for insufficient data for each inspection item missing from the inspection results document according to the inspection item conditions of the inspection results document. Next, an overall pass-fail determination is performed by comparing the product inspection results and input from the product inspection result input device 1 for each inspection item and product inspection results cited for products of other batches, with product standards and tolerances stored in the inspection item master 2a for each inspection item for products for each customer.
摘要翻译：当对产品检验结果输入装置1输入产品检查结果和检查项目的检查频率时，选择检查项目，确定每个检查项目所需的产品检验结果的有无，先前产品检验的选择通过产品标准管理装置2的检查项目主体2a和检查频率主控2b进行结果，并且针对根据检查结果文档缺少的每个检查项目的数据不足，引用了之前测量的其他产品批次的产品检查结果检验项目条件的检验结果文件。接下来，通过比较产品检查结果和每个检验项目的产品检验结果输入装置1的输入和其他批次的产品引用的产品检验结果，存储在检验中的产品标准和公差来进行总体通过失败确定每个客户的产品的每个检查项目的项目主人2a。

2. 发明授权

US5766976A Method for detecting crystal defects in a silicon single crystal substrate 失效
标题翻译：用于检测硅单晶衬底中的晶体缺陷的方法
公开(公告)号：US5766976A
公开(公告)日：1998-06-16
申请号：US827103
申请日：1997-03-17
申请人： Masaki Majima
发明人： Masaki Majima
IPC分类号： G01N21/88 , C30B33/00 , G01N1/32 , G01N21/956 , H01L21/66 , H01L21/00
CPC分类号： C30B29/06 , C30B33/00 , G01N1/32
摘要： This invention relates to a method for detecting crystal defects in a silicon single crystal substrate which contains a dopant with the concentration of at least 7.0.times.10.sup.16 atoms/cm.sup.3. In the method, a native oxide film 2 on the surface of a silicon single crystal substrate 1 is removed, then copper 4 is deposited on the surface of silicon single crystal substrate 1, then the silicon single crystal substrate 1 is etched by an alkaline aqueous solution. Finally, the etched surface of silicon single crystal substrate 1 is observed by visual observation or by an optical microscope to evaluate crystal defects 3 of silicon single crystal substrate 1.
摘要翻译：本发明涉及一种检测含有浓度至少为7.0×10 16原子/ cm 3的掺杂剂的硅单晶衬底中的晶体缺陷的方法。在该方法中，除去硅单晶衬底1表面上的自然氧化物膜2，然后在硅单晶衬底1的表面上沉积铜4，然后用碱性水溶液解。最后，通过目视观察或通过光学显微镜观察硅单晶衬底1的蚀刻表面，以评估硅单晶衬底1的晶体缺陷3。

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