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1. 发明授权

US08101502B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08101502B2
公开(公告)日：2012-01-24
申请号：US12600813
申请日：2008-04-01
申请人： Yasumori Fukushima , Yutaka Takafuji , Kazuhide Tomiyasu , Michiko Takei , Steven Droes
发明人： Yasumori Fukushima , Yutaka Takafuji , Kazuhide Tomiyasu , Michiko Takei , Steven Droes
IPC分类号： H01L21/22
CPC分类号： H01L27/12 , H01L21/2007 , H01L21/31053 , H01L21/31055 , H01L21/76254 , H01L21/84 , H01L29/78636 , H01L2224/83894 , H01L2924/01079 , H01L2924/1305 , H01L2924/00
摘要： A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed.
摘要翻译：器件部分形成步骤包括辅助层形成步骤，在形成第二平坦化层之前，在第一平坦化层上形成覆盖多个导电膜的平坦化辅助层。在辅助层形成步骤中，形成平坦化辅助层，使得平坦化辅助层从位于与衬底层相反的一侧的第一平坦化层的表面的高度在至少一部分区域之间变得相等，形成导电膜，并且形成不形成导电膜的区域的至少一部分。

2. 发明申请

US20100155905A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100155905A1
公开(公告)日：2010-06-24
申请号：US12600813
申请日：2008-04-01
申请人： Yasumori Fukushima , Yutaka Takafuji , Kazuhide Tomiyasu , Michiko Takei , Steven Droes
发明人： Yasumori Fukushima , Yutaka Takafuji , Kazuhide Tomiyasu , Michiko Takei , Steven Droes
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L27/12 , H01L21/2007 , H01L21/31053 , H01L21/31055 , H01L21/76254 , H01L21/84 , H01L29/78636 , H01L2224/83894 , H01L2924/01079 , H01L2924/1305 , H01L2924/00
摘要： A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed.
摘要翻译：器件部分形成步骤包括辅助层形成步骤，在形成第二平坦化层之前，在第一平坦化层上形成覆盖多个导电膜的平坦化辅助层。在辅助层形成步骤中，形成平坦化辅助层，使得平坦化辅助层从位于与衬底层相反的一侧的第一平坦化层的表面的高度在至少一部分区域之间变得相等，形成导电膜，并且形成不形成导电膜的区域的至少一部分。

3. 发明授权

US08361882B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08361882B2
公开(公告)日：2013-01-29
申请号：US13139988
申请日：2009-08-21
申请人： Michiko Takei , Yasumori Fukushima , Kazuhide Tomiyasu , Shin Matsumoto , Kazuo Nakagawa , Yutaka Takafuji
发明人： Michiko Takei , Yasumori Fukushima , Kazuhide Tomiyasu , Shin Matsumoto , Kazuo Nakagawa , Yutaka Takafuji
IPC分类号： H01L21/30 , H01L29/06
CPC分类号： H01L27/1266 , H01L27/1214 , H01L29/66772 , H01L29/78636
摘要： Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.
摘要翻译：提供一种其中执行以下步骤的半导体器件制造方法; 在基体层上形成元素的至少一部分的步骤，形成剥离层的步骤，形成平坦化膜的步骤; 通过在分离区域分离基体层而形成模具的步骤; 通过将该模具接合在平坦化膜上而将芯片接合到基板的步骤; 以及沿剥离层剥离和去除基体层的一部分的步骤。在成形模具的步骤之前，形成在平坦化膜的表面上开口的槽，使得至少一部分分离区域包含在槽的底面上，并且形成模具，使得模具具有多边形外形，其中通过形成凹槽来执行所有内角都是钝的。

4. 发明申请

US20120038022A1 INSULATING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的绝缘衬底和半导体器件
公开(公告)号：US20120038022A1
公开(公告)日：2012-02-16
申请号：US13259076
申请日：2009-10-26
申请人： Kazuhide Tomiyasu , Yutaka Takafuji , Yasumori Fukushima , Kazuo Nakagawa , Kenshi Tada , Michiko Takei , Shin Matsumoto
发明人： Kazuhide Tomiyasu , Yutaka Takafuji , Yasumori Fukushima , Kazuo Nakagawa , Kenshi Tada , Michiko Takei , Shin Matsumoto
IPC分类号： H01L29/02 , B32B3/00
CPC分类号： H01L27/1218 , H01L27/1214 , H01L27/1222 , H01L27/1266 , H01L29/66772 , Y10T428/24355
摘要： Disclosed is a glass substrate (20) that is capable of constituting a semiconductor device (10) when a monocrystalline silicon thin film (90) is provided on the surface of the substrate by transfer. The surface of the glass substrate (20) has a receiving surface (22) onto which the monocrystalline silicon thin film (90) can be provided. The height of the ripples on the receiving surface (22) having a period of 200 to 500 microns is no more than 0.40 nm.
摘要翻译：公开了当通过转印在基板的表面上设置单晶硅薄膜（90）时能够构成半导体器件（10）的玻璃基板（20）。玻璃基板（20）的表面具有能够设置单晶硅薄膜（90）的接收面（22）。在接收表面（22）上具有200至500微米的周期的波纹的高度不大于0.40nm。

5. 发明申请

US20110272694A1 INSULATING SUBSTRATE FOR SEMICONDUCTOR APPARATUS, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS 有权
标题翻译：用于半导体装置的绝缘基板，半导体装置和制造半导体装置的方法
公开(公告)号：US20110272694A1
公开(公告)日：2011-11-10
申请号：US12674560
申请日：2008-09-08
申请人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
发明人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
IPC分类号： H01L29/24 , H01L21/762 , B32B3/00 , H01L29/04
CPC分类号： H01L27/1266 , H01L21/02076 , H01L21/76254 , H01L27/1214 , H01L29/78603 , Y10T428/24355
摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.
摘要翻译：本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有算术平均粗糙度不大于0.4nm。

6. 发明授权

US08008205B2 Methods for producing a semiconductor device having planarization films 有权
标题翻译：具有平坦化膜的半导体器件的制造方法
公开(公告)号：US08008205B2
公开(公告)日：2011-08-30
申请号：US12159582
申请日：2006-10-13
申请人： Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
发明人： Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
IPC分类号： H01L21/311
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254 , H01L21/823475 , H01L21/823481 , H01L27/12 , H01L29/6659 , H01L29/7833
摘要： A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.
摘要翻译：本发明的方法包括：第一平坦化膜形成步骤，在第二区域的平坦部分的至少一部分中形成具有均匀厚度的第一平坦化膜; 第二平坦化膜形成步骤，在所述第一平坦化膜之间形成与所述第一平坦化膜的表面共面的第二平坦化膜; 剥离层形成步骤，通过经由第一平坦化膜或第二平坦化膜将剥离材料离子注入基底层来形成剥离层; 以及分离步骤，用于沿着剥离层分离基底层的一部分。

7. 发明授权

US08421076B2 Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus 有权
标题翻译：半导体装置绝缘基板，半导体装置及半导体装置的制造方法
公开(公告)号：US08421076B2
公开(公告)日：2013-04-16
申请号：US12674560
申请日：2008-09-08
申请人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
发明人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
IPC分类号： H01L29/72
CPC分类号： H01L27/1266 , H01L21/02076 , H01L21/76254 , H01L27/1214 , H01L29/78603 , Y10T428/24355
摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.
摘要翻译：本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有算术平均粗糙度不大于0.4nm。

8. 发明申请

US20100295105A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100295105A1
公开(公告)日：2010-11-25
申请号：US12746323
申请日：2008-09-25
申请人： Yasumori Fukushima , Kazuhide Tomiyasu , Yutaka Takafuji , Kenshi Tada , Michiko Takei
发明人： Yasumori Fukushima , Kazuhide Tomiyasu , Yutaka Takafuji , Kenshi Tada , Michiko Takei
IPC分类号： H01L29/78 , H01L21/762 , H01L29/73 , H01L29/861 , H01L21/331 , H01L21/336
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/6659 , H01L29/66772 , H01L29/7833
摘要： A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element.
摘要翻译：一种制造半导体器件的方法包括：元件部分形成步骤，在基底层上形成元件部分; 在所述基底层中形成剥离层的剥离层形成工序; 键合步骤，将具有元件部分的基底层粘合到基底上; 以及分离步骤，通过加热结合到基板的基底层，沿着剥离层在深度方向上分离和去除基底层的一部分。该方法还包括在分离步骤之后的离子注入步骤，用于在基底层中离子注入p型杂质元素，以调整元件的p型区域的杂质浓度。

9. 发明申请

US20100270618A1 PRODUCTION METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的生产方法
公开(公告)号：US20100270618A1
公开(公告)日：2010-10-28
申请号：US12741852
申请日：2008-10-14
申请人： Michiko Takei , Yutaka Takafuji , Yasumori Fukushima , Kazuhide Tomiyasu , Steven Roy Droes
发明人： Michiko Takei , Yutaka Takafuji , Yasumori Fukushima , Kazuhide Tomiyasu , Steven Roy Droes
IPC分类号： H01L29/786 , H01L21/762 , H01L23/48
CPC分类号： H01L27/1266 , H01L21/31053 , H01L21/76819 , H01L27/1214 , H01L29/66772
摘要： The present invention provides a production method of a semiconductor device, capable of improving surface flatness of a semiconductor chip formed on a semiconductor substrate and thereby suppressing a variation in electrical characteristics of the semiconductor chip transferred onto a substrate with an insulating surface, and further capable of improving production yield. The present invention provides a production method of a semiconductor device including a semiconductor chip on a substrate with an insulating surface, the semiconductor chip having a conductive pattern film, the production method including the following successive steps of: forming a first insulating film on a semiconductor substrate and on a conductive pattern film formed on the semiconductor substrate and reducing a thickness of the first insulating film in a region where the conductive pattern film is arranged by patterning; forming a second insulating film and polishing the second insulating film, thereby forming a flattening film; implanting a substance for cleavage into the semiconductor substrate through the flattening film, thereby forming a cleavage layer; transferring the semiconductor chip onto a substrate with an insulating surface so that the chip surface on the side opposite to the semiconductor substrate is attached thereto; and separating the semiconductor substrate from the cleavage layer. The present invention is also a semiconductor device produced by the production method.
摘要翻译：本发明提供一种半导体器件的制造方法，其能够提高形成在半导体基板上的半导体芯片的表面平坦性，从而抑制转印到具有绝缘表面的基板上的半导体芯片的电特性的变化，提高产量。本发明提供一种半导体器件的制造方法，该半导体器件在具有绝缘表面的衬底上具有半导体芯片，该半导体芯片具有导电图案膜，该制造方法包括以下连续步骤：在半导体上形成第一绝缘膜并且在形成在半导体衬底上的导电图案膜上，并且通过图案化在导电图案膜布置的区域中减小第一绝缘膜的厚度; 形成第二绝缘膜并抛光第二绝缘膜，从而形成平坦化膜; 通过平坦化的膜将用于裂解的物质注入到半导体衬底中，从而形成裂解层; 将半导体芯片转印到具有绝缘表面的基板上，使得与半导体基板相对的一侧的芯片表面附着在其上; 并将半导体衬底与解理层分离。本发明也是通过该制造方法制造的半导体装置。

10. 发明申请

US20100244136A1 SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF 审中-公开
标题翻译：半导体器件，单晶半导体薄膜包覆基片及其制造方法
公开(公告)号：US20100244136A1
公开(公告)日：2010-09-30
申请号：US12742660
申请日：2008-10-22
申请人： Yutaka Takafuji , Kazuo Nakagawa , Yasumori Fukushima , Kazuhide Tomiyasu , Michiko Takei
发明人： Yutaka Takafuji , Kazuo Nakagawa , Yasumori Fukushima , Kazuhide Tomiyasu , Michiko Takei
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L27/1229 , H01L29/1054 , H01L29/1608 , H01L29/665 , H01L29/66772
摘要： The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance.The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate,the production method including a heat treatment step of subjecting a single-crystal semiconductor thin film to a heat treatment at 650° C. or higher,the single-crystal semiconductor thin film including at least part of each one of single-crystal semiconductor elements and boded to an intermediate substrate with a heat-resistant temperature higher than that of the insulating substrate.
摘要翻译：本发明提供一种半导体器件，含有单晶半导体薄膜的衬底及其制造方法，其中，通过转印到低耐热绝缘衬底上制造的包含单晶半导体薄膜的单晶半导体元件具有增强的晶体管特性和降低的布线电阻。本发明是一种在绝缘基板上包括单晶半导体薄膜的单晶半导体元件的半导体器件的制造方法，该制造方法包括对单晶半导体薄膜进行热处理的热处理工序在650℃以上的处理，所述单晶半导体薄膜包含单晶半导体元件的至少一部分，并且与耐热温度高于绝缘基板的中间基板接合。

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