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1. 发明授权

US06174614B1 Sintered aluminum nitride body and metallized substrate prepared therefrom 有权
标题翻译：烧结氮化铝体和由其制备的金属化基材
公开(公告)号：US06174614B1
公开(公告)日：2001-01-16
申请号：US09178771
申请日：1998-10-26
申请人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka
发明人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka
IPC分类号： B32B1800
CPC分类号： C04B41/009 , C04B35/581 , C04B41/5116 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C04B41/5027 , C04B41/5074 , C04B41/5049 , C04B41/5006 , C04B41/5072 , C04B41/5122 , C04B41/522 , C04B41/5022
摘要： A sintered aluminum nitride body comprising aluminum nitride as the main component and containing a calcium compound, an ytterbium compound, and a neodymium compound. Due to the use of the above calcium-yttrium-neodymium ternary sintering aid, the sintered aluminum nitride body can be obtained by firing a compact of the raw material powder at a low temperature after degreasing the compact without cracking and has evenness of in color, strength and thermal conductivity. The sintered aluminum nitride body provides an inexpensive, high-quality metallized substrate for electronic parts by forming a high-melting metallizing layer of W and/or Mo. Onto the aluminum nitride body, an Ag metallizing layer including oxides of Zn and Cu or an Ag-Pd metallilzing layer including oxides of B, Pb, Cr and Ca and, if necessary, further an insulating vitreous layer may be formed.
摘要翻译：一种包含氮化铝作为主要成分并含有钙化合物，镱化合物和钕化合物的烧结氮化铝体。由于使用了上述的钙 - 钇 - 钕三元烧结助剂，所以可以通过在低密度烧结原料粉末的压实体而不产生裂纹的同时，在低温下烧结原料粉末的粉末，并且具有均匀的颜色，强度和导热性。烧结的氮化铝体通过形成W和/或Mo的高熔点金属化层，为电子部件提供廉价的高品质金属化基板。在氮化铝体上，包含Zn和Cu的氧化物的Ag金属化层或可以形成包含B，Pb，Cr和Ca的氧化物的Ag-Pd金属化层，并且如果需要，还可以形成绝缘玻璃质层。

2. 发明授权

US06271163B1 Aluminum nitride sintered body and method of preparing the same 有权
标题翻译：氮化铝烧结体及其制备方法
公开(公告)号：US06271163B1
公开(公告)日：2001-08-07
申请号：US09357600
申请日：1999-07-20
申请人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
发明人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
IPC分类号： C04B35581
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H01L2924/00
摘要： An aluminum nitride sintered body has excellent thermal shock resistance and strength, and is applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. The aluminum nitride sintered body contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, respectively as sintering aids, and a residual amount of carbon in a range from 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.
摘要翻译：氮化铝烧结体具有优异的耐热冲击性和强度，并且适用于在严格的热循环下使用的用于功率模块的辐射基板或用于半导体设备的夹具。氮化铝烧结体分别含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀土元素化合物，以氧化物计，作为烧结助剂，残留量在0.005〜0.1重量％的范围内，从而抑制晶粒生长，提高耐热冲击性和烧结体的强度。

3. 发明授权

US06294275B1 Aluminum-nitride sintered body, method for fabricating the same, and semiconductor substrate comprising the same 有权
标题翻译：氮化铝烧结体及其制造方法以及包含该氮化物的半导体衬底
公开(公告)号：US06294275B1
公开(公告)日：2001-09-25
申请号：US09304531
申请日：1999-05-04
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio , Motoyuki Tanaka , Shunji Nagao , Akira Shinkoda , Kazutaka Sasaki
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio , Motoyuki Tanaka , Shunji Nagao , Akira Shinkoda , Kazutaka Sasaki
IPC分类号： B32B900
CPC分类号： C04B41/009 , C04B35/581 , C04B41/51 , C04B41/88 , C04B2111/00844 , H01L23/15 , H01L2924/0002 , H05K1/0306 , Y10T428/24917 , H01L2924/00
摘要： An aluminum-nitride sintered body that has both high thermal conductivity and high mechanical strength, a fabricating method for the same, and a semiconductor substrate comprising the same. A material powder is prepared by mixing an aluminum-nitride powder, constituting 1 to 95 wt. %, having an average particle diameter of 1.0 &mgr;m or less obtained by chemical vapor deposition, with another type or types of aluminum-nitride powders constituting the remaining part. The material powder is sintered in a non-oxidizing atmosphere to obtain a sintered body having an average grain diameter of 2 &mgr;m or less and a half width of the diffraction peak on the (302) plane, obtained by X-ray diffraction, of 0.24 deg. or less. Formation of a metallized layer on the sintered body yields a semiconductor substrate.
摘要翻译：具有高导热性和高机械强度的氮化铝烧结体及其制造方法以及包含该氮化物烧结体的半导体衬底。通过混合构成1〜95重量％的氮化铝粉末，％，通过化学气相沉积获得的平均粒径为1.0μm以下的其他类型的氮化铝粉末构成剩余部分。将该材料粉末在非氧化性气氛中烧结，得到平均粒径为2μm以下的通过X射线衍射得到的（302）面衍射峰的半值宽度为0.24的烧结体度或更少。在烧结体上形成金属化层产生半导体衬底。

4. 发明授权

US06428741B2 Aluminum nitride sintered body and method of preparing the same 有权
标题翻译：氮化铝烧结体及其制备方法
公开(公告)号：US06428741B2
公开(公告)日：2002-08-06
申请号：US09783259
申请日：2001-02-13
申请人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
发明人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
IPC分类号： C04B35581
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H01L2924/00
摘要： Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering aid of a rare earth element and an alkaline earth metal element contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, and the amount of carbon remaining in the sintered body is controlled to 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.
摘要翻译：提供耐热冲击性和强度优异的氮化铝烧结体，适用于在严格的热循环下使用的功率模块用的放射性基板或半导体装置的夹具。用稀土元素和碱土金属元素的烧结助剂获得的氮化铝烧结体含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀有金属元素以氧化物换算的土元素化合物，将烧结体中剩余的碳量控制在0.005〜0.1重量％，抑制晶粒生长，提高耐烧结体的耐热冲击性和强度。

5. 发明授权

US06500052B2 Method of polishing a ceramic substrate 有权
标题翻译：抛光陶瓷基板的方法
公开(公告)号：US06500052B2
公开(公告)日：2002-12-31
申请号：US09964997
申请日：2001-09-26
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
IPC分类号： B24B100
CPC分类号： B24B29/00 , B24B7/22 , G03G15/2053 , Y10T428/24355 , Y10T428/24413 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/266 , Y10T428/268
摘要： The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle &thgr; formed between the polishing direction D0 of the ceramic substrate and the rotating direction D1, of the rotating body is set in the range from 10° to 80° for the polishing step. Alternatively, the polishing process is divided into at least two steps. and the average grain size of abrasive grains is reduced stepwise in the successive steps of the polishing process. According to this method, the surface of a large-area and thin ceramic substrate can be polished without damage, and a smooth polished ceramic surface can be provided. This method is particularly suitable for polishing a ceramic substrate having a thickness of at most 2.0 mm, and the resulting polished ceramic substrate is suitable for a ceramic heater in a thermal fixation device for fixing a toner image.
摘要翻译：含有磨粒的韧性旋转体的圆周边缘部分用于抛光陶瓷基体的表面。在研磨步骤中，将陶瓷基板的研磨方向D0与旋转体的旋转方向D1之间形成的角度θ设定在10°〜80°的范围内。或者，将抛光处理分为至少两个步骤。在研磨过程的连续步骤中，磨粒的平均粒径逐步降低。根据该方法，可以在不损坏的情况下抛光大面积且薄的陶瓷基板的表面，并且可以提供光滑的抛光陶瓷表面。该方法特别适合于研磨厚度至多为2.0mm的陶瓷基板，所得到的抛光陶瓷基板适用于用于定影调色剂图像的热固定装置中的陶瓷加热器。

6. 发明授权

US06458444B1 Ceramic substrate and polishing method thereof 有权
标题翻译：陶瓷基板及其研磨方法
公开(公告)号：US06458444B1
公开(公告)日：2002-10-01
申请号：US09275478
申请日：1999-03-24
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
IPC分类号： G03G1520
CPC分类号： B24B29/00 , B24B7/22 , G03G15/2053 , Y10T428/24355 , Y10T428/24413 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/266 , Y10T428/268
摘要： The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle &thgr; formed between the polished direction D0 of the ceramic substrate and the rotating direction D1 of the rotating body is set in the range from 10° to 80° for the polishing step. Alternatively, the polishing process is divided into at least two steps, and the average grain size of abrasive grains is reduced stepwise in the successive steps of the polishing process. According to this method, the surface of a large-area and thin ceramic substrate can be polished without damage, and a smooth polished ceramic surface can be provided. This method is particularly suitable for polishing a ceramic substrate having a thickness of at most 2.0 mm, and the resulting polished ceramic substrate is suitable for a ceramic heater in a thermal fixation device for fixing a toner image.
摘要翻译：含有磨粒的韧性旋转体的圆周边缘部分用于抛光陶瓷基体的表面。在陶瓷基板的研磨方向D0与旋转体的旋转方向D1之间形成的角度θ被设定在10°〜80°的范围内。或者，抛光工艺被分为至少两个步骤，并且在抛光过程的连续步骤中磨粒的平均晶粒尺寸逐步降低。根据该方法，可以在不损坏的情况下抛光大面积且薄的陶瓷基板的表面，并且可以提供光滑的抛光陶瓷表面。该方法特别适合于研磨厚度至多为2.0mm的陶瓷基板，所得到的抛光陶瓷基板适用于用于定影调色剂图像的热固定装置中的陶瓷加热器。

7. 发明授权

US06770379B2 Susceptor for semiconductor manufacturing equipment and process for producing the same 失效
标题翻译：半导体制造设备的受害者及其生产过程
公开(公告)号：US06770379B2
公开(公告)日：2004-08-03
申请号：US10166778
申请日：2002-06-12
申请人： Yasuhisa Yushio , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Yasuhisa Yushio , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： B21D3900
CPC分类号： C04B35/581 , B32B37/12 , B32B2315/02 , C04B35/111 , C04B35/6263 , C04B35/62655 , C04B35/62695 , C04B35/6342 , C04B35/638 , C04B37/005 , C04B37/006 , C04B41/009 , C04B41/5001 , C04B41/85 , C04B2235/3206 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3418 , C04B2235/36 , C04B2235/3865 , C04B2235/3895 , C04B2235/449 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5481 , C04B2235/602 , C04B2235/6021 , C04B2235/6025 , C04B2235/604 , C04B2235/608 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/85 , C04B2235/94 , C04B2235/9607 , C04B2235/9615 , C04B2235/963 , C04B2235/9638 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/343 , C04B2237/366 , C04B2237/66 , C04B2237/72 , C23C16/4581 , C30B25/12 , C30B31/14 , Y10S428/901 , Y10T428/12542 , Y10T428/12549 , Y10T428/24926 , Y10T428/252 , Y10T428/30 , C04B41/4531 , C04B41/53 , B32B18/00
摘要： A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (AlN), in which the average particle size of an AlN crystal is from 2 to 5 &mgr;m. The susceptor is prepared by obtaining substrates from a mixture of the material powders through the steps of molding, sintering in a non-oxidizing atmosphere at 1,600 to 2,000° C. and forming into a desired substrate shape, and then laminating a plurality of the thus obtained substrate with a high melting point metallic layer and an adhesive layer inserted between the substrates, firing the laminate in a non-oxidizing atmosphere at 1,500 to 1,700° and finishing the fired laminate.
摘要翻译：通过层叠多个具有高熔点金属层和粘合剂层的氮化铝（AlN）陶瓷基板，特别是氮化铝（AlN）陶瓷基板而获得的用于半导体制造设备的感受体包含第3a族元素的化合物 0.01〜1重量％，余量基本上由氮化铝（AlN）组成，其中AlN晶体的平均粒径为2-5μm。通过以下步骤从材料粉末的混合物中获得基材来制备感受体，所述方法是在1600-2000℃的非氧化性气氛中进行成型，烧结并形成所需的基材形状，然后层压多个得到的基材具有高熔点金属层和粘合剂层，插入在基板之间，在非氧化性气氛中烧结层压体为1500〜1700°，并对烧成的层叠体进行精加工。

8. 发明授权

US6078027A Ceramic fixing heater containing silicon nitride 失效
标题翻译：含氮化硅的陶瓷固定加热器
公开(公告)号：US6078027A
公开(公告)日：2000-06-20
申请号：US153789
申请日：1998-09-15
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio
IPC分类号： G03G15/20 , H05B3/14 , H05B3/16 , H05B1/00
CPC分类号： H05B3/141 , G03G15/2053 , G03G15/2064
摘要： A heater for fixing a toner image suffers no cracking of the ceramics substrate, thereof has a high connection reliability between an electrode and a connector thereof, and capable of attaining an improved fixing speed and a size increase of a transfer material. The heater, which is adapted to heat and fix a toner image on a transfer material, comprises a ceramics substrate containing silicon nitride and a heat generator formed on the ceramics substrate. The thermal conductivity and the transverse rupture strength of the silicon nitride forming the ceramics substrate are preferably at least 40 W/mK and at least 50 kg/mm.sup.2 respectively, and the thickness of the ceramics substrate can be reduced to 0.1 to 0.5 mm.
摘要翻译：用于固定调色剂图像的加热器不会破坏陶瓷基板，而是在电极及其连接器之间具有高的连接可靠性，并且能够获得改进的定影速度和转印材料的尺寸增加。适于将调色剂图像加热并固定在转印材料上的加热器包括形成在陶瓷基板上的含有氮化硅的陶瓷基板和发热体。形成陶瓷基板的氮化硅的导热率和横向断裂强度分别优选为40W / mK以上且50kg / mm2以上，陶瓷基板的厚度可以降低至0.1〜0.5mm。

9. 发明授权

US06423400B1 Susceptor for semiconductor manufacturing equipment and process for producing the same 有权
标题翻译：半导体制造设备的受害者及其生产过程
公开(公告)号：US06423400B1
公开(公告)日：2002-07-23
申请号：US09260003
申请日：1999-03-02
申请人： Yasuhisa Yushio , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Yasuhisa Yushio , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： H01L2168
CPC分类号： C04B35/581 , B32B37/12 , B32B2315/02 , C04B35/111 , C04B35/6263 , C04B35/62655 , C04B35/62695 , C04B35/6342 , C04B35/638 , C04B37/005 , C04B37/006 , C04B41/009 , C04B41/5001 , C04B41/85 , C04B2235/3206 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3418 , C04B2235/36 , C04B2235/3865 , C04B2235/3895 , C04B2235/449 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5481 , C04B2235/602 , C04B2235/6021 , C04B2235/6025 , C04B2235/604 , C04B2235/608 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/85 , C04B2235/94 , C04B2235/9607 , C04B2235/9615 , C04B2235/963 , C04B2235/9638 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/343 , C04B2237/366 , C04B2237/66 , C04B2237/72 , C23C16/4581 , C30B25/12 , C30B31/14 , Y10S428/901 , Y10T428/12542 , Y10T428/12549 , Y10T428/24926 , Y10T428/252 , Y10T428/30 , C04B41/4531 , C04B41/53 , B32B18/00
摘要： A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (AlN), in which the average particle size of an AlN crystal is from 2 to 5 &mgr;m. The susceptor is prepared by obtaining substrates from a mixture of the material powders through the steps of molding, sintering in a non-oxidizing atmosphere at 1,600 to 2,000° C. and forming into a desired substrate shape, and then laminating a plurality of the thus obtained substrate with a high melting point metallic layer and an adhesive layer inserted between the substrates, firing the laminate in a non-oxidizing atmosphere at 1,500 to 1,700° and finishing the fired laminate.
摘要翻译：通过层叠多个具有高熔点金属层和粘合剂层的氮化铝（AlN）陶瓷基板，特别是氮化铝（AlN）陶瓷基板而获得的用于半导体制造设备的感受体包含第3a族元素的化合物 0.01〜1重量％，余量基本上由氮化铝（AlN）组成，其中AlN晶体的平均粒径为2-5μm。通过以下步骤从材料粉末的混合物中获得基材来制备感受体，所述方法是在1600-2000℃的非氧化性气氛中进行成型，烧结并形成所需的基材形状，然后层压多个得到的基材具有高熔点金属层和粘合剂层，插入在基板之间，在非氧化性气氛中烧结层压体为1500〜1700°，并对烧成的层叠体进行精加工。

10. 发明授权

US6084221A Aluminum nitride heater 有权
标题翻译：氮化铝加热器
公开(公告)号：US6084221A
公开(公告)日：2000-07-04
申请号：US181341
申请日：1998-10-28
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio
IPC分类号： H05B3/20 , H05B3/12 , H05B3/14 , H05B3/16 , H05B3/26 , H05B3/10
CPC分类号： H05B3/265 , H05B3/141
摘要： A ceramic heater includes a substrate (1) consisting of an aluminum nitride sintered body, and a heating element (2) and a feed electrode (3), mainly composed of silver or a silver alloy, formed on a surface of the substrate (1). The aluminum nitride sintered body contains a group IIa or IIIa element in the periodic table or a compound thereof and silicon or a silicon compound of 0.01 to 0.5 percent by weight in terms of the silicon element, and preferably further contains a group VIII transition element or a compound thereof by 0.01 to 1 percent by weight in terms of the element.
摘要翻译：陶瓷加热器包括由氮化铝烧结体构成的基板（1）和主要由银或银合金构成的加热元件（2）和进料电极（3））。氮化铝烧结体包含元素周期表中的IIa或IIIa族元素或其化合物，硅或硅化合物以硅元素换算为0.01〜0.5重量％，优选还含有VIII族过渡元素或其化合物按元素换算为0.01〜1重量％。

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