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1. 发明授权

US08969819B2 Radiation image pickup apparatus and method of driving the same 有权
标题翻译：辐射摄像装置及其驱动方法
公开(公告)号：US08969819B2
公开(公告)日：2015-03-03
申请号：US13027328
申请日：2011-02-15
申请人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
发明人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
IPC分类号： G01T1/24 , H01L29/66 , H01L27/146 , G01T1/20 , H04N5/225 , H04N5/374 , H04N5/378
CPC分类号： H01L27/14676 , G01T1/2018 , H04N5/2251 , H04N5/374 , H04N5/378
摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.
摘要翻译：允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动通过像素晶体管，从而恢复像素晶体管的特性。

2. 发明授权

US09312421B2 Photoelectric conversion element and photoelectric converter 有权
标题翻译：光电转换元件和光电转换器
公开(公告)号：US09312421B2
公开(公告)日：2016-04-12
申请号：US13474061
申请日：2012-05-17
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L31/105 , H01L31/0216 , H01L27/146
CPC分类号： H01L31/105 , H01L27/14663 , H01L31/02164
摘要： Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.
摘要翻译：本文公开了一种光电转换元件，包括：设置在基板上方的第一导电类型的第一半导体层; 设置在比所述第一半导体层更高层的第二导电类型的第二半导体层; 第三导电类型的第三半导体层，设置在第一和第二半导体层之间，并且导电率低于第一和第二半导体层; 以及设置在所述基板和所述第一半导体层之间的遮光层。

3. 发明授权

US08952477B2 Photoelectric conversion element having a plurality of layered semiconductors and method for manufacturing same 有权
标题翻译：具有多层分层半导体的光电转换元件及其制造方法
公开(公告)号：US08952477B2
公开(公告)日：2015-02-10
申请号：US13196096
申请日：2011-08-02
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
IPC分类号： H01L31/102 , H01L31/0352 , H01L27/146 , H01L31/105
CPC分类号： H01L31/0352 , H01L27/14607 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.
摘要翻译：光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。第三半导体层具有与第一半导体层不接触的至少一个角部。

4. 发明申请

US20120313103A1 RADIOACTIVE-RAY IMAGING APPARATUS, RADIOACTIVE-RAY IMAGING DISPLAY SYSTEM AND TRANSISTOR 审中-公开
标题翻译：放射性成像显微镜，放射性成像显示系统和晶体管
公开(公告)号：US20120313103A1
公开(公告)日：2012-12-13
申请号：US13485485
申请日：2012-05-31
申请人： Yasuhiro Yamada , Ryoichi Ito , Tsutomu Tanaka , Makoto Takatoku , Michiru Senda
发明人： Yasuhiro Yamada , Ryoichi Ito , Tsutomu Tanaka , Makoto Takatoku , Michiru Senda
IPC分类号： H01L31/0224 , H01L29/786
CPC分类号： H01L27/146 , H01L27/14623 , H01L27/14632 , H01L27/14643 , H01L27/14663 , H01L27/14676 , H01L29/7831 , H01L29/78633
摘要： Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film.
摘要翻译：本文公开了一种晶体管，包括：半导体层; 设置在所述半导体层的比表面侧的第一栅极绝缘膜和第一层间绝缘膜; 设置在所述第一栅极绝缘膜和所述第一层间绝缘膜之间的位置处的第一栅电极; 设置在所述半导体层的另一个表面侧的绝缘膜; 源电极和漏电极通过电连接到半导体层而提供; 以及屏蔽电极层，其设置成使得所述屏蔽电极层的至少一部分面对所述第一栅电极的边缘，其中所述第一栅极绝缘膜，所述第一层间绝缘膜和所述绝缘膜中的至少一个包括硅氧化物膜。

5. 发明授权

US08901562B2 Radiation imaging device, radiation imaging display system, and transistor 有权
标题翻译：辐射成像装置，放射成像显示系统和晶体管
公开(公告)号：US08901562B2
公开(公告)日：2014-12-02
申请号：US13334945
申请日：2011-12-22
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku
IPC分类号： H01L29/04 , H01L27/12 , H01L27/146 , H01L29/786 , H04N5/32
CPC分类号： H01L27/14663 , H01L29/78645 , H01L29/78648 , H04N5/32
摘要： There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less.
摘要翻译：提供了晶体管和放射线成像装置，其中可以抑制由于辐射暴露引起的阈值电压的偏移。晶体管在衬底上依次包括第一栅极电极，第一栅极绝缘体，半导体层，第二栅极绝缘体和第二栅极电极。第一和第二栅极绝缘体中的每一个包括一个或多个具有氧的硅化合物膜，并且硅化合物膜的总厚度为65nm以下。

6. 发明申请

US20120175618A1 RADIATION IMAGING DEVICE, RADIATION IMAGING DISPLAY SYSTEM, AND TRANSISTOR 有权
标题翻译：辐射成像装置，辐射成像显示系统和晶体管
公开(公告)号：US20120175618A1
公开(公告)日：2012-07-12
申请号：US13334945
申请日：2011-12-22
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku
IPC分类号： H01L33/08 , H01L29/786
CPC分类号： H01L27/14663 , H01L29/78645 , H01L29/78648 , H04N5/32
摘要： There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less.
摘要翻译：提供了晶体管和放射线成像装置，其中可以抑制由于辐射暴露引起的阈值电压的偏移。晶体管在衬底上依次包括第一栅极电极，第一栅极绝缘体，半导体层，第二栅极绝缘体和第二栅极电极。第一和第二栅极绝缘体中的每一个包括一个或多个具有氧的硅化合物膜，并且硅化合物膜的总厚度为65nm以下。

7. 发明申请

US20120299070A1 PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERTER 有权
标题翻译：光电转换元件和光电转换器
公开(公告)号：US20120299070A1
公开(公告)日：2012-11-29
申请号：US13474061
申请日：2012-05-17
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
IPC分类号： H01L31/0232 , H01L27/144 , H01L27/146
CPC分类号： H01L31/105 , H01L27/14663 , H01L31/02164
摘要： Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.
摘要翻译：本文公开了一种光电转换元件，包括：设置在基板上方的第一导电类型的第一半导体层; 设置在比所述第一半导体层更高层的第二导电类型的第二半导体层; 第三导电类型的第三半导体层，设置在第一和第二半导体层之间，并且导电率低于第一和第二半导体层; 以及设置在所述基板和所述第一半导体层之间的遮光层。

8. 发明申请

US20120038018A1 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：光电转换元件及其制造方法
公开(公告)号：US20120038018A1
公开(公告)日：2012-02-16
申请号：US13196096
申请日：2011-08-02
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/0352 , H01L27/14607 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.
摘要翻译：光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。第三半导体层具有与第一半导体层不接触的至少一个角部。

9. 发明申请

US20110204246A1 RADIATION IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME 有权
标题翻译：辐射图像拾取装置及其驱动方法
公开(公告)号：US20110204246A1
公开(公告)日：2011-08-25
申请号：US13027328
申请日：2011-02-15
申请人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
发明人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
IPC分类号： G01T1/24 , H01L29/04 , H01L27/146
CPC分类号： H01L27/14676 , G01T1/2018 , H04N5/2251 , H04N5/374 , H04N5/378
摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.
摘要翻译：允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动通过像素晶体管，从而恢复像素晶体管的特性。

10. 发明授权

US08456460B2 Sensor element and method of driving sensor element, and input device, display device with input function and communication device 失效
标题翻译：传感器元件和驱动传感器元件的方法，输入装置，具有输入功能的显示装置和通讯装置
公开(公告)号：US08456460B2
公开(公告)日：2013-06-04
申请号：US12562317
申请日：2009-09-18
申请人： Tsutomu Tanaka , Makoto Takatoku , Michiru Senda , Keiichiro Ishihara
发明人： Tsutomu Tanaka , Makoto Takatoku , Michiru Senda , Keiichiro Ishihara
IPC分类号： G06F3/038
CPC分类号： H01L27/1446 , H01L31/145
摘要： The present invention provides a sensor element including two diode elements connected in series to each other, and a capacitive element having one end connected to a junction point between the two diode elements. Each of the diode elements includes a semiconductor layer having a p-type semiconductor region and an n-type semiconductor region facing each other in an in-plane direction, an anode electrode connected to the p-type semiconductor region, a cathode electrode connected to the n-type semiconductor region, a gate insulting film adjoining the semiconductor layer in a stacking direction, and a gate electrode facing the semiconductor layer with the gate insulating film in between.
摘要翻译：本发明提供一种传感器元件，其包括彼此串联连接的两个二极管元件，以及电容元件，其一端连接到两个二极管元件之间的接合点。每个二极管元件包括具有p型半导体区域和在面内方向上彼此相对的n型半导体区域的半导体层，连接到p型半导体区域的阳极电极，连接到 n型半导体区域，在层叠方向上邻接半导体层的栅极绝缘膜以及面对半导体层的栅极电极与栅极绝缘膜之间。

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