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    • 9. 发明授权
    • Apparatus for manufacturing silicon single crystals
    • 硅单晶制造装置
    • US5270020A
    • 1993-12-14
    • US862337
    • 1992-04-02
    • Makoto SuzukiMasanori OhmuraShuzo FukudaYoshinobu ShimaTakeshi SuzukiYasuhide IshiguroIwao Ida
    • Makoto SuzukiMasanori OhmuraShuzo FukudaYoshinobu ShimaTakeshi SuzukiYasuhide IshiguroIwao Ida
    • C30B15/00C30B15/02C30B15/14C30B15/22
    • C30B15/14Y10S117/90
    • A silicon single crystal manufacturing apparatus according to the CZ method which includes a partition member for dividing a quartz crucible into a single crystal growing section and a material melting section and having at least one small hole for permitting the passage of molten silicon, and a heat keeping cover for covering the partition member and the material melting section. The heat keeping cover is made of a sheet of metal selected from the group consisting of Ta, Mo and W and containing Fe 50 ppm or less and Cu 10 ppm or less. The metal sheet includes a surface layer composed of a silicon-enriched layer, and the depth of an area of the silicon-enriched layer in which the content of Si is greater than the contents of Fe and Cu at the same position therein is not less than 10 .mu.m from the surface. The content of Fe in the silicon-enriched layer is not greater than 5 ppm. Thus, this is the apparatus for manufacturing silicon single crystals, being very low in oxidation induced stacking fault (OSF) density.
    • 根据CZ方法的硅单晶制造装置,其包括用于将石英坩埚分割成单晶生长部分的分隔部件和材料熔化部分,并且具有至少一个用于允许熔融硅通过的小孔,并且热量 用于覆盖分隔构件和材料熔化部分的保持盖。 保温盖由选自Ta,Mo和W的金属片制成,含有Fe 50ppm以下且Cu为10ppm以下。 金属片包括由富硅层构成的表面层,并且其中Si含量大于其中相同位置处的Fe和Cu含量的富硅层的面积的深度不小于 距离表面10亩以上。 富硅层中的Fe含量不大于5ppm。 因此,这是制造硅单晶的装置,其氧化诱导堆垛层错密度(OSF)非常低。