专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06950331B2 Organic bistable device and organic memory cells 有权
标题翻译：有机双稳态器件和有机存储器单元
公开(公告)号：US06950331B2
公开(公告)日：2005-09-27
申请号：US10399586
申请日：2001-05-24
申请人： Yang Yang , Liping Ma , Jie Liu
发明人： Yang Yang , Liping Ma , Jie Liu
IPC分类号： G11C13/00 , G11C11/34 , G11C11/54 , G11C13/02 , G11C16/02 , H01L27/10 , H01L27/28 , H01L45/00 , H01L49/02 , H01L51/05 , H01L51/30 , G11C11/00
CPC分类号： G11C13/0004 , B82Y10/00 , G11C11/34 , G11C11/54 , G11C13/0014 , G11C13/0016 , G11C2213/12 , G11C2213/15 , G11C2213/55 , G11C2213/56 , H01L27/2409 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/14
摘要： A bistable electrical device (50) employing a bistable body (52) and a high conductivity material (54). A sufficient amount of high conductivity material (54) is included in the bistable body (52) to impart bistable between a low resistance state and a high resistance state by application of an electrical voltage (60).
摘要翻译：采用双稳态电路（52）和高导电性材料（54）的双稳电气装置（50）。双稳体（52）中包含足够量的高导电性材料（54），以通过施加电压（60）在双电阻状态和高电阻状态之间双稳态。

2. 发明申请

US20070252126A1 Driver and Drive Method for Organic Bistable Electrical Device and Organic Led Display 审中-公开
标题翻译：有机双稳电器和有机LED显示器的驱动和驱动方法
公开(公告)号：US20070252126A1
公开(公告)日：2007-11-01
申请号：US10592079
申请日：2005-03-15
申请人： Haruo Kawakami , Yang Yang , Liping Ma
发明人： Haruo Kawakami , Yang Yang , Liping Ma
IPC分类号： H01L47/00 , H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G09G3/2011 , G09G3/2014 , G09G3/3208 , G09G3/3216 , G09G2300/0473 , H01L27/24 , H01L27/3281 , H01L51/0067 , H01L51/0068 , H01L51/0081 , H01L51/0575 , H01L51/0591 , H01L51/0595 , H05B33/0896
摘要： An electroluminescent device based on bistability, and method for its use. The device alternates between a low resistance state and a high resistance state by application of an electrical voltage. A bistable electrical device has two electrodes sandwiching an organic material that produces bistable action. An organic light emitting diode next to the bistable device is emits light when conducting. To achieve graduated light output, circuitry is provided for applying to the bistable device a constant bias voltage intermediate a turnoff voltage and a turn-on voltage, and electrical pulses variable in a temporal pulse width or in an additional voltage, or in both. The additional voltage is superimposed on the bias voltage while the pulse is applied. The current through the bistable device, and therefore the brightness of light emitted by the diode after the pulse has ceased, are controlled by varying the pulse width or the additional voltage.
摘要翻译：基于双稳态的电致发光器件及其使用方法。该装置通过施加电压在低电阻状态和高电阻状态之间交替。双稳电气装置具有夹持产生双稳态作用的有机材料的两个电极。双稳态器件旁边的有机发光二极管在导通时发光。为了实现渐变光输出，提供电路用于向双稳态器件施加恒定的偏置电压，其中间断开电压和导通电压，以及可在时间脉冲宽度或附加电压中或两者中的电脉冲。当施加脉冲时，附加电压叠加在偏置电压上。通过双稳态器件的电流，并且因此在脉冲停止之后由二极管发射的光的亮度通过改变脉冲宽度或附加电压来控制。

3. 发明授权

US06784017B2 Method of creating a high performance organic semiconductor device 失效
标题翻译：制造高性能有机半导体器件的方法
公开(公告)号：US06784017B2
公开(公告)日：2004-08-31
申请号：US10218141
申请日：2002-08-12
申请人： Yang Yang , Liping Ma , Michael L. Beigel
发明人： Yang Yang , Liping Ma , Michael L. Beigel
IPC分类号： H01L5140
CPC分类号： H01L51/0579 , B82Y10/00 , H01L51/0021 , H01L51/0026 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0041 , H01L51/0044 , H01L51/0046 , H01L51/005 , H01L51/0051 , H01L51/0052 , H01L51/0059 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0512 , H01L51/0541 , H01L51/5206 , H01L51/5209 , H01L51/5221
摘要： A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. An example enhanced organic diode comprising aluminum, carbon C60, and copper is described, as well as example insulated gate field effect transistors.
摘要翻译：高温热退火工艺在金属材料和有机半导体器件的有机材料之间产生低电阻接触，这提高了载流子注入的效率。该过程形成欧姆接触和肖特基接触。另外，该过程可能导致金属离子或原子迁移或扩散到有机材料中，导致有机材料结晶，或两者都结合。所得到的有机半导体器件具有增强的操作特性，例如更快的操作速度。代替使用热量，该方法可以使用其他形式的能量，例如用于局部加热的电压，电流，电磁辐射能量，红外能量和紫外线能量。描述了包括铝，碳C60和铜的增强有机二极管的示例，以及示例性绝缘栅场效应晶体管。

4. 发明授权

US07544966B2 Three-terminal electrical bistable devices 有权
标题翻译：三端电气双稳态器件
公开(公告)号：US07544966B2
公开(公告)日：2009-06-09
申请号：US10581797
申请日：2004-12-01
申请人： Yang Yang , Liping Ma , Jun He
发明人： Yang Yang , Liping Ma , Jun He
IPC分类号： H01L35/24 , H01L21/00 , G09G3/36
CPC分类号： H01L51/0504 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , G11C2213/55 , H01L51/0036 , H01L51/0039 , H01L51/004 , H01L51/0043 , H01L51/0067 , H01L51/05
摘要： A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is interposed between a top electrode and a bottom electrode. The conducting mixed layer serves as the middle electrode. The device includes two memory cells composed of electrode/organic layer/mixed layer, where the interfaces between the electrically conductive mixed layer and the low conductivity organic layer exhibit bistable behavior.
摘要翻译：一种三端电双稳态器件，其包括夹在介于顶电极和底电极之间的两层低电导有机材料之间的导电混合层组成的三层。导电混合层用作中间电极。该装置包括由电极/有机层/混合层组成的两个存储单元，其中导电混合层和低电导率有机层之间的界面呈现双稳态。

5. 发明授权

US07476893B2 Vertical organic field effect transistor 有权
标题翻译：垂直有机场效应晶体管
公开(公告)号：US07476893B2
公开(公告)日：2009-01-13
申请号：US10569755
申请日：2004-08-24
申请人： Yang Yang , Liping Ma
发明人： Yang Yang , Liping Ma
IPC分类号： H01L51/10
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0046 , H01L51/0047 , H01L51/0059 , H01L51/0078 , H01L51/0081 , H01L51/0512 , H01L51/055
摘要： A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a gate electrode and the common source electrode. The common source electrode allows control of electrical current between the source and drain electrodes by controlling the electrical potential that is applied to the gate electrode.
摘要翻译：一种垂直有机场效应晶体管，其包括共用公共源电极的有源电池和电容器。活性电池包括夹在漏电极和公共源电极之间的半导体层。电容器包括夹在栅电极和公共源电极之间的电介质层。公共源电极通过控制施加到栅电极的电位来允许控制源极和漏极之间的电流。

6. 发明申请

US20060284230A1 Vertical organic field effect transistor 有权
公开(公告)号：US20060284230A1
公开(公告)日：2006-12-21
申请号：US10569755
申请日：2004-08-24
申请人： Yang Yang , Liping Ma
发明人： Yang Yang , Liping Ma
IPC分类号： H01L29/94
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0046 , H01L51/0047 , H01L51/0059 , H01L51/0078 , H01L51/0081 , H01L51/0512 , H01L51/055
摘要： A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a gate electrode and the common source electrode. The common source electrode allows control of electrical current between the source and drain electrodes by controlling the electrical potential that is applied to the gate electrode.

7. 发明申请

US20060131560A1 Rewritable nano-surface organic electrical bistable devices 有权
公开(公告)号：US20060131560A1
公开(公告)日：2006-06-22
申请号：US10542843
申请日：2004-02-02
申请人： Yang Yang , Liping Ma
发明人： Yang Yang , Liping Ma
IPC分类号： H01L29/08
CPC分类号： H01L27/28 , B82Y10/00 , H01L51/0051 , H01L51/0067 , H01L51/0591 , H01L51/0595
摘要： A bistable electrical device that is convertible between a low resistance state and a high resistance state. The device includes at least one layer of organic low conductivity material that is sandwiched between two electrodes. A buffer layer is located between the organic layer and at least one of the electrodes. The buffer layer includes particles in the form of flakes or dots of a low conducting material or insulating material that are present in a sufficient amount to only partially cover the electrode surface. The presence of the buffer layer controls metal migration into the organic layer when voltage pulses are applied between the electrodes to convert the device back and forth between the low and high resistance states.

8. 发明申请

US20050003574A1 Method of creating a high performance organic semiconductor device 审中-公开
标题翻译：制造高性能有机半导体器件的方法
公开(公告)号：US20050003574A1
公开(公告)日：2005-01-06
申请号：US10884317
申请日：2004-07-01
申请人： Yang Yang , Liping Ma , Michael Beigel
发明人： Yang Yang , Liping Ma , Michael Beigel
IPC分类号： H01L21/28 , H01L21/00 , H01L21/02 , H01L21/336 , H01L21/44 , H01L29/26 , H01L29/786 , H01L35/24 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L51/52
CPC分类号： H01L51/0579 , B82Y10/00 , H01L51/0021 , H01L51/0026 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0041 , H01L51/0044 , H01L51/0046 , H01L51/005 , H01L51/0051 , H01L51/0052 , H01L51/0059 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0512 , H01L51/0541 , H01L51/5206 , H01L51/5209 , H01L51/5221
摘要： A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. An example enhanced organic diode comprising aluminum, carbon C60, and copper is described, as well as example insulated gate field effect transistors.
摘要翻译：高温热退火工艺在金属材料和有机半导体器件的有机材料之间产生低电阻接触，这提高了载流子注入的效率。该过程形成欧姆接触和肖特基接触。另外，该过程可能导致金属离子或原子迁移或扩散到有机材料中，导致有机材料结晶，或两者都结合。所得到的有机半导体器件具有增强的操作特性，例如更快的操作速度。代替使用热量，该方法可以使用其他形式的能量，例如用于局部加热的电压，电流，电磁辐射能量，红外能量和紫外线能量。描述了包括铝，碳C60和铜的增强有机二极管的示例，以及示例性绝缘栅场效应晶体管。

9. 发明授权

US07482621B2 Rewritable nano-surface organic electrical bistable devices 有权
标题翻译：可重写纳米表面有机电双稳态器件
公开(公告)号：US07482621B2
公开(公告)日：2009-01-27
申请号：US10542843
申请日：2004-02-02
申请人： Yang Yang , Liping Ma
发明人： Yang Yang , Liping Ma
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L27/28 , B82Y10/00 , H01L51/0051 , H01L51/0067 , H01L51/0591 , H01L51/0595
摘要： A bistable electrical device that is convertible between a low resistance state and a high resistance state. The device includes at least one layer of organic low conductivity material that is sandwiched between two electrodes. A buffer layer is located between the organic layer and at least one of the electrodes. The buffer layer includes particles in the form of flakes or dots of a low conducting material or insulating material that are present in a sufficient amount to only partially cover the electrode surface. The presence of the buffer layer controls metal migration into the organic layer when voltage pulses are applied between the electrodes to convert the device back and forth between the low and high resistance states.
摘要翻译：双稳态电气装置，可在低电阻状态和高电阻状态之间转换。该装置包括夹在两个电极之间的至少一层有机低电导率材料。缓冲层位于有机层和至少一个电极之间。缓冲层包括薄片形式的颗粒或低导电材料或绝缘材料的点，其以足够的量存在以仅部分地覆盖电极表面。当在电极之间施加电压脉冲时，缓冲层的存在控制金属迁移到有机层中，以在低电阻状态和高电阻状态之间来回转换器件。

10. 发明申请

US20070164272A1 Three-terminal electrical bistable devices 有权
标题翻译：三端电气双稳态器件
公开(公告)号：US20070164272A1
公开(公告)日：2007-07-19
申请号：US10581797
申请日：2004-12-01
申请人： Yang Yang , Liping Ma , Jun He
发明人： Yang Yang , Liping Ma , Jun He
IPC分类号： H01L29/08
CPC分类号： H01L51/0504 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , G11C2213/55 , H01L51/0036 , H01L51/0039 , H01L51/004 , H01L51/0043 , H01L51/0067 , H01L51/05
摘要： A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is interposed between a top electrode and a bottom electrode. The conducting mixed layer serves as the middle electrode. The device includes two memory cells composed of electrode/organic layer/mixed layer, where the interfaces between the electrically conductive mixed layer and the low conductivity organic layer exhibit bistable behavior.
摘要翻译：一种三端电双稳态器件，其包括夹在介于顶电极和底电极之间的两层低电导有机材料之间的导电混合层组成的三层。导电混合层用作中间电极。该装置包括由电极/有机层/混合层组成的两个存储单元，其中导电混合层和低电导率有机层之间的界面呈现双稳态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式