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    • 2. 发明授权
    • Black level calibration method and system
    • 黑色电平校准方法和系统
    • US08564697B2
    • 2013-10-22
    • US12582715
    • 2009-10-21
    • Nguyen DongAmit MittraChi-Shao Lin
    • Nguyen DongAmit MittraChi-Shao Lin
    • H04N9/64
    • H04N5/361H04N5/335
    • Black level calibration methods and systems are generally disclosed. According to one embodiment of the present invention, a method of calibrating a black level signal in a frame includes performing an iteration of averaging a first set of digital values corresponding to a first set of adjusted black level signals associated with a first set of black pixels of the frame, determining whether an average value based on the first set of digital values has reached a target black level, determining a calibration offset based on a difference between the average value and the target black level and an accumulator step, converting the calibration offset to an analog signal, generating a calibration signal based on the analog signal for a second set of black pixels of the frame, and repeating the iteration for the frame until a predetermined condition is determined to have been met.
    • 通常公开黑电平校准方法和系统。 根据本发明的一个实施例,一种在帧中校准黑电平信号的方法包括执行对与第一组黑色像素相关联的第一组经调整的黑电平信号相对应的第一组数字值进行平均的迭代 确定基于第一组数字值的平均值是否已经达到目标黑电平,基于平均值和目标黑电平之间的差确定校准偏移和累加器步骤,将校准偏移转换 模拟信号,基于该帧的第二组黑色像素的模拟信号产生校准信号,并重复该帧的迭代,直到确定已经满足预定条件。
    • 3. 发明授权
    • Image sensing device and fabrication thereof
    • 图像感测装置及其制造
    • US08368160B2
    • 2013-02-05
    • US12898419
    • 2010-10-05
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • H01L31/042
    • H01L31/18H01L27/14621H01L27/1463H01L27/14645H01L27/14689
    • An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
    • 公开了一种图像感测装置,包括具有导电类型的外延层,包括对应于第一入射光的第一像素区域,对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域 光,其中第一入射光的波长比第二入射光的波长长,第二入射光的波长比第三入射光的波长长。 光电二极管设置在外延层的上部,并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素 区域,其中第一像素区域中的外延层的至少一部分不包括第一深孔。
    • 8. 发明申请
    • METHOD AND CIRCUIT FOR DRIVING ACTIVE PIXELS IN A CMOS IMAGER DEVICE
    • 用于在CMOS成像器件中驱动有源像素的方法和电路
    • US20090295965A1
    • 2009-12-03
    • US12129900
    • 2008-05-30
    • Desmond Yu Hin CheungAmit MittraChi-Shao Lin
    • Desmond Yu Hin CheungAmit MittraChi-Shao Lin
    • H04N5/335H01L27/146
    • H04N5/3745H01L27/14641H04N5/357
    • One embodiment of the present invention describes a pixel circuit that comprises at least one photodiode, a first transistor coupled between the photodiode and a floating diffusion node, a second transistor coupled between the floating diffusion node and a modifiable driving voltage signal, and a third transistor having a gate coupled to the floating diffusion node, a source coupled to a signal output, and a drain coupled to a constant voltage. Another embodiment of the present invention provides a method for driving the pixel circuit, which comprises resetting the photodiode and the floating diffusion node, exposing the photodiode to light to accumulate charges, selecting the pixel circuit by switching the driving voltage signal from a first voltage level to a second voltage level, retrieving a reference voltage from the selected pixel circuit, and retrieving an image signal from the selected pixel circuit corresponding to the accumulated charges.
    • 本发明的一个实施例描述了一种像素电路,其包括至少一个光电二极管,耦合在光电二极管和浮动扩散节点之间的第一晶体管,耦合在浮动扩散节点和可修改驱动电压信号之间的第二晶体管,以及第三晶体管 具有耦合到浮动扩散节点的栅极,耦合到信号输出的源极和耦合到恒定电压的漏极。 本发明的另一个实施例提供了一种用于驱动像素电路的方法,该方法包括复位光电二极管和浮动扩散节点,将光电二极管暴露于​​光以累积电荷,通过从第一电压电平切换驱动电压信号来选择像素电路 获取第二电压电平,从所选择的像素电路检索参考电压,以及从对应于累积电荷的所选择的像素电路中检索图像信号。
    • 9. 发明申请
    • Programmable rise/fall time control circuit
    • 可编程上升/下降时间控制电路
    • US20070001101A1
    • 2007-01-04
    • US11238425
    • 2005-09-28
    • Raj SundararamanChi-Shao LinJiafu LuoRichard MannZeynep Toros
    • Raj SundararamanChi-Shao LinJiafu LuoRichard MannZeynep Toros
    • H01J40/14
    • H04N5/335H04N5/3745H04N5/376
    • An electronic device is provided such as a programmable rise/fall time control circuit, for example, that delivers a continuous and near linear rising/falling slope of a control signal, with programmability that can be implemented in future CMOS image sensor devices. This device includes a programmability block for reset or transfer gate signals. The programmability block includes two inputs: an input bias current and a signal from the control bits. The programmability block further includes two similar internal circuit blocks, one for generating a fall time control signal, and one for generating a rise time control signal. Additionally the programmability block includes two outputs; a fall time control signal, and a rise time control signal. The device further includes a reset or transfer gate buffer configured as an inverter. The reset or transfer gate buffer includes three input signals: The fall time control signal and rise time control signal from the programmability block, and an INT Reset signal. Furthermore, the reset or transfer gate buffer includes an output reset or transfer gate signal. The device is configured to take an input bias current, and by controlling the transconductance of internal circuitry provide a tapered rise and fall time signal to a reset or transfer gate of a CMOS image sensor that is programmable.
    • 提供了诸如可编程上升/下降时间控制电路的电子装置,其可以传递控制信号的连续和近似线性的上升/下降斜率,具有可在将来的CMOS图像传感器装置中实现的可编程性。 该器件包括用于复位或传输门信号的可编程块。 可编程块包括两个输入:输入偏置电流和来自控制位的信号。 可编程块还包括两个类似的内部电路块,一个用于产生下降时间控制信号,另一个用于产生上升时间控制信号。 此外,可编程块包括两个输出; 下降时间控制信号和上升时间控制信号。 该装置还包括被配置为反相器的复位或传输门缓冲器。 复位或传输门缓冲器包括三个输入信号:来自可编程块的下降时间控制信号和上升时间控制信号,以及一个INT复位信号。 此外,复位或传输门缓冲器包括输出复位或传输门信号。 该器件被配置为获取输入偏置电流,并且通过控制内部电路的跨导向可编程的CMOS图像传感器的复位或传输门提供渐变的上升和下降时间信号。
    • 10. 发明申请
    • Image Sensing Device and Fabrication Thereof
    • 影像感应装置及其制作
    • US20120080766A1
    • 2012-04-05
    • US12898419
    • 2010-10-05
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • H01L27/146H01L31/18
    • H01L31/18H01L27/14621H01L27/1463H01L27/14645H01L27/14689
    • An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
    • 公开了一种图像感测装置,包括具有导电类型的外延层,包括对应于第一入射光的第一像素区域,对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域 光,其中第一入射光的波长比第二入射光的波长长,第二入射光的波长比第三入射光的波长长。 光电二极管设置在外延层的上部,并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素 区域,其中第一像素区域中的外延层的至少一部分不包括第一深孔。