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    • 1. 发明授权
    • Method for programming of multi-state non-volatile memory using smart verify
    • 使用智能验证来编程多状态非易失性存储器的方法
    • US07492634B2
    • 2009-02-17
    • US11862157
    • 2007-09-26
    • Yan LiLong Pham
    • Yan LiLong Pham
    • G11C16/04
    • G11C11/5628G11C16/0483G11C16/12G11C16/3454G11C16/3459G11C2211/5621
    • In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.
    • 在非易失性存储器中,自适应地设定程序验证的启动,从而减少编程时间。 在一种方法中,非易失性存储元件基于较低数据页被编程以具有落在第一VTH分布或更高的中间VTH分布内的电压阈值(VTH)。 随后,具有第一VTH分配的非易失性存储元件基于数据的上部页面保留在那里,或被编程到第二VTH分发。 具有中间VTH分布的非易失性存储元件被编程为第三和第四VTH分布。 被编程到第三VTH分配的非易失性存储元件被特别地识别和跟踪。 被编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个从中间VTH分布转换到第三VTH分布之后启动。
    • 2. 发明授权
    • Method for programming of multi-state non-volatile memory using smart verify
    • 使用智能验证来编程多状态非易失性存储器的方法
    • US07301817B2
    • 2007-11-27
    • US11260658
    • 2005-10-27
    • Yan LiLong Pham
    • Yan LiLong Pham
    • G11C16/06
    • G11C11/5628G11C16/0483G11C16/12G11C16/3454G11C16/3459G11C2211/5621
    • In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.
    • 在非易失性存储器中,自适应地设定程序验证的启动,从而减少编程时间。 在一种方法中,非易失性存储元件基于较低数据页被编程以具有落在第一V TH分布内的电压阈值(V TH TH TH),或 较高的中间V TH分配。 随后,具有第一V TH分布的非易失性存储元件基于数据的上部页面保留在那里,或被编程到第二V TH分配。 具有中间V TH分布的非易失性存储元件被编程到第三和第四V分布。 专门识别和跟踪正在编程到第三VTH分配的非易失性存储元件。 正在编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个转移到第三V TH分布之后启动, 中间V TH分配。
    • 3. 发明申请
    • METHOD FOR PROGRAMMING OF MULTI-STATE NON-VOLATILE MEMORY USING SMART VERIFY
    • 使用SMART VERIFY编程多状态非易失性存储器的方法
    • US20080013374A1
    • 2008-01-17
    • US11862157
    • 2007-09-26
    • Yan LiLong Pham
    • Yan LiLong Pham
    • G11C16/04
    • G11C11/5628G11C16/0483G11C16/12G11C16/3454G11C16/3459G11C2211/5621
    • In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.
    • 在非易失性存储器中,自适应地设定程序验证的启动,从而减少编程时间。 在一种方法中,非易失性存储元件基于较低数据页被编程以具有落在第一V TH分布内的电压阈值(V TH TH TH),或 较高的中间V TH分配。 随后,具有第一V TH分布的非易失性存储元件基于数据的上部页面保留在那里,或被编程到第二V TH分配。 具有中间V TH分布的非易失性存储元件被编程到第三和第四V分布。 专门识别和跟踪正在编程到第三VTH分配的非易失性存储元件。 正在编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个转移到第三V TH分布之后启动, 中间V TH分配。
    • 4. 发明申请
    • Apparatus for programming of multi-state non-volatile memory using smart verify
    • 使用智能验证来编程多状态非易失性存储器的装置
    • US20070097747A1
    • 2007-05-03
    • US11259799
    • 2005-10-27
    • Yan LiLong Pham
    • Yan LiLong Pham
    • G11C16/04
    • G11C16/0483G11C11/5628G11C16/12G11C16/3454G11C16/3459G11C2211/5621
    • In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.
    • 在非易失性存储器中,自适应地设定程序验证的启动,从而减少编程时间。 在一种方法中,非易失性存储元件基于较低数据页被编程以具有落在第一V TH分布内的电压阈值(V TH TH TH),或 较高的中间V TH分配。 随后,具有第一V TH分布的非易失性存储元件基于数据的上部页面保留在那里,或被编程到第二V TH分配。 具有中间V TH分布的非易失性存储元件被编程到第三和第四V分布。 专门识别和跟踪正在编程到第三VTH分配的非易失性存储元件。 正在编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个转移到第三V TH分布之后启动, 中间V TH分配。
    • 5. 发明授权
    • Apparatus for programming of multi-state non-volatile memory using smart verify
    • 使用智能验证来编程多状态非易失性存储器的装置
    • US07366022B2
    • 2008-04-29
    • US11259799
    • 2005-10-27
    • Yan LiLong Pham
    • Yan LiLong Pham
    • G11C11/34G11C16/06
    • G11C16/0483G11C11/5628G11C16/12G11C16/3454G11C16/3459G11C2211/5621
    • In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.
    • 在非易失性存储器中,自适应地设定程序验证的启动,从而减少编程时间。 在一种方法中,非易失性存储元件基于较低数据页被编程以具有落在第一V TH分布内的电压阈值(V TH TH TH),或 较高的中间V TH分配。 随后,具有第一V TH分布的非易失性存储元件基于数据的上部页面保留在那里,或被编程到第二V TH分配。 具有中间V TH分布的非易失性存储元件被编程到第三和第四V分布。 专门识别和跟踪正在编程到第三VTH分配的非易失性存储元件。 正在编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个转移到第三V TH分布之后启动, 中间V TH分配。