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1. 发明申请

US20090259819A1 METHOD OF WEAR LEVELING FOR NON-VOLATILE MEMORY 审中-公开
标题翻译：非易失性存储器的磨损方法
公开(公告)号：US20090259819A1
公开(公告)日：2009-10-15
申请号：US12100136
申请日：2008-04-09
申请人： YEN MING CHEN , SHIH CHIEH TAI , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
发明人： YEN MING CHEN , SHIH CHIEH TAI , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
IPC分类号： G06F12/02 , G06F13/00 , G06F12/00
CPC分类号： G06F13/4239
摘要： A method of wear leveling for a non-volatile memory is performed as follows. First, the non-volatile memory is divided into a plurality of zones including at least a first zone and a second zone. The first zone is written and/or erased in which one or more logical blocks have higher writing hit rate, and therefore the corresponding physical blocks in the first zone will be written more often. The next step is to find one or more free physical blocks in second zone. The physical blocks of the first zone are replaced by the physical blocks of the second zone if the number of write and/or erase to the first zone exceeds a threshold number. The replacement of physical blocks in the first zone by the physical blocks in the second zone may include the steps of copying data from the physical blocks in the first zone to the physical block in the second zone, and changing the pointer of logical blocks to point to the physical blocks in the second zone.
摘要翻译：如下执行用于非易失性存储器的磨损均衡的方法。首先，非易失性存储器被分成包括至少第一区域和第二区域的多个区域。写入和/或擦除第一区域，其中一个或多个逻辑块具有较高的写入命中率，因此第一区域中相应的物理块将被更频繁地写入。下一步是在第二个区域中找到一个或多个空闲的物理块。如果第一区的写入次数和/或擦除次数超过阈值，则第一区的物理块被第二区的物理块替换。通过第二区域中的物理块来替换第一区域中的物理块可以包括以下步骤：将数据从第一区域中的物理块复制到第二区域中的物理块，并将逻辑块的指针改变为点到第二区的物理块。

2. 发明申请

US20090287893A1 METHOD FOR MANAGING MEMORY 审中-公开
标题翻译：管理记忆的方法
公开(公告)号：US20090287893A1
公开(公告)日：2009-11-19
申请号：US12122568
申请日：2008-05-16
申请人： CHUANG CHENG , SHIH CHIEH TAI , MING HUI LIN , CHIH NAN YEN , FUJA SHONE
发明人： CHUANG CHENG , SHIH CHIEH TAI , MING HUI LIN , CHIH NAN YEN , FUJA SHONE
IPC分类号： G06F12/12
CPC分类号： G06F12/0246 , G06F11/141
摘要： A method is employed to manage a memory, e.g., a flash memory, including a plurality of paired pages. Each paired page includes a page and a respective risk zone. For each write command, at least one unwritten page is selected for writing new data. For each unwritten page whose risk zone includes at least one written page, each written page is copied or backed up, and the new data is written to the unwritten page. For each unwritten page whose risk zone lacks a written page, the new data is written to the unwritten page. In an embodiment, the written page is copied only if the unwritten page and the written page are operated by different write commands.
摘要翻译：采用一种方法来管理包括多个配对页面的存储器，例如闪速存储器。每个配对页面包括页面和相应的风险区域。对于每个写入命令，至少选择一个未写入的页面来写入新数据。对于每个未写入的页面，其风险区域至少包含一个写入页面，每个写入的页面都将被复制或备份，并将新数据写入未写入的页面。对于其风险区缺少书面页面的每个未写入页面，新数据将写入未写入的页面。在一个实施例中，仅当未写入的页面和写入的页面由不同的写入命令操作时才复制书面页面。

3. 发明申请

US20090254729A1 METHOD OF WEAR LEVELING FOR A NON-VOLATILE MEMORY 审中-公开
标题翻译：非易失性存储器的磨损方法
公开(公告)号：US20090254729A1
公开(公告)日：2009-10-08
申请号：US12098741
申请日：2008-04-07
申请人： CHIEN CHENG LIN , HSIN JEN HUANG , SHIH CHIEH TAI , CHIH NAN YEN , FUJA SHONE
发明人： CHIEN CHENG LIN , HSIN JEN HUANG , SHIH CHIEH TAI , CHIH NAN YEN , FUJA SHONE
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7207 , G06F2212/7211
摘要： According to the method of wear leveling for a non-volatile memory of the present invention, the non-volatile memory is divided into a plurality of windows, and a mapping table is built in which the logical block addresses having frequently accessed data are allocated equally to the plurality of windows. The logical block addresses may store a File Allocation Table (FAT) or a directory table; therefore the windows they locate will be written or erased more frequently. In an embodiment, the logical block addresses having frequently accessed data are allocated on a one-to-one basis to the plurality of windows. For example, the plurality of windows may comprise Windows 0, 1, 2 and 3, the logical block addresses comprise logical block addresses 0, 1, 2 and 3, and logical block addresses 0, 1, 2 and 3 point to Windows 0, 1, 2 and 3, respectively.
摘要翻译：根据本发明的非易失性存储器的磨损均衡方法，将非易失性存储器划分为多个窗口，并且构建了具有频繁访问的数据的逻辑块地址被均等地分配的映射表到多个窗口。逻辑块地址可以存储文件分配表（FAT）或目录表; 因此，他们找到的窗口将被更频繁地写入或擦除。在一个实施例中，具有频繁访问的数据的逻辑块地址被分配给多个窗口。例如，多个窗口可以包括Windows 0,1,2和3，逻辑块地址包括逻辑块地址0,1,2和3，逻辑块地址0,1,2和3指向Windows 0，分别为1,2和3。

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