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2. 发明申请

WO2007005618A2 HIGH PERFORMANCE ORGANIC THIN FILM TRANSISTOR 审中-公开
标题翻译：高性能有机薄膜晶体管
公开(公告)号：WO2007005618A2
公开(公告)日：2007-01-11
申请号：PCT/US2006025598
申请日：2006-06-30
申请人： UNIV CALIFORNIA , YANG YANG , CHU CHIH-WEI , LI SHENG-HAN
发明人： YANG YANG , CHU CHIH-WEI , LI SHENG-HAN
IPC分类号： H01L51/00
CPC分类号： H01L51/0525 , H01L21/31604 , H01L51/0052
摘要： An organic thin film transistor has a gate electrode, a gate insulator formed on the gate electrode, a layer of organic semiconducting material formed on the gate insulator, a source electrode formed on the layer of organic semiconducting material, and a drain electrode formed on the layer of organic semiconducting material. The source electrode and/or the drain electrode have a layer of transition-metal oxide formed on the organic semiconducting material and a layer of metal formed on the layer of transition-metal oxide. A method of producing an organic thin film transistor includes providing a gate electrode, forming a gate insulator on the gate electrode, forming a layer of semiconducting material on the gate insulator, forming a source electrode on the layer of organic semiconducting material, and forming a drain electrode on the layer of organic semiconducting material. Forming the source electrode and/or forming the drain electrode include forming a layer of transition-metal oxide on the organic semiconducting material and forming a layer of metal on the layer of transition-metal oxide.
摘要翻译：有机薄膜晶体管具有栅电极，形成在栅电极上的栅极绝缘体，形成在栅极绝缘体上的有机半导体材料层，形成在有机半导体材料层上的源电极和形成在栅极绝缘体上的漏电极有机半导体材料层。源电极和/或漏极具有形成在有机半导体材料上的过渡金属氧化物层和形成在过渡金属氧化物层上的金属层。制造有机薄膜晶体管的方法包括提供栅电极，在栅电极上形成栅极绝缘体，在栅极绝缘体上形成半导体材料层，在有机半导体材料层上形成源电极，并形成有机半导体材料层上的漏电极。形成源电极和/或形成漏极包括在有机半导体材料上形成过渡金属氧化物层并在过渡金属氧化物层上形成金属层。

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