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    • 2. 发明申请
    • LED ACTUATING DEVICE AND METHOD
    • LED激励装置和方法
    • US20150123574A1
    • 2015-05-07
    • US14529255
    • 2014-10-31
    • Jun HU
    • Jun HUYongming DENGPing LIU
    • H05B33/08
    • H05B33/0815H05B33/0851
    • An actuating device comprises an LED actuating module. Said LED actuating module comprises a micro-programmed control unit (MCU), an actuator, a VF-value detection module, a PN-junction temperature acquisition module and an LED lamp unit. The MCU determines the current value matched with the LED lamp unit based on the VF value detected by the VF-value detection module and the temperature value detected by the PN-junction temperature acquisition module, and then determines the width of the PWM pulse output to the actuator according to the current value, and the actuator actuates an LED to operate at the matched current value.
    • 致动装置包括LED致动模块。 所述LED驱动模块包括微编程控制单元(MCU),致动器,VF值检测模块,PN结温度采集模块和LED灯单元。 MCU根据VF值检测模块检测到的VF值和PN结温度采集模块检测到的温度值,确定与LED灯具单元匹配的电流值,然后确定PWM脉冲输出的宽度 执行器根据当前值,并且致动器致动LED以在匹配的电流值下操作。
    • 3. 发明申请
    • LED ACTUATING DEVICE AND METHOD
    • LED激励装置和方法
    • US20150123573A1
    • 2015-05-07
    • US14529250
    • 2014-10-31
    • Jun HU
    • Jun HUYongming DENGPing LIU
    • H05B33/08
    • H05B33/0842Y02B20/42
    • An LED actuating device comprises an LED actuating module, the LED actuating module comprises a micro-programmed control unit (MCU), a VF-value detection module, an actuator and an LED lamp unit; the MCU receives the VF value detected by the VF-value detection module; when the VF value is greater than or equal to a first boundary value, the LED lamp unit is actuated to operate in the constant current area at the first constant actuating current by the actuator; when the VF value is less than the first boundary value, the LED lamp unit is actuated to operate in the regulation area at the continuous step-down actuating current by the actuator until the VF is equal to the second boundary value, and the second boundary value is less than the first boundary value.
    • LED驱动装置包括LED驱动模块,LED驱动模块包括微编程控制单元(MCU),VF值检测模块,致动器和LED灯单元; MCU接收VF值检测模块检测到的VF值; 当VF值大于或等于第一边界值时,LED灯单元被致动以在致动器的第一恒定致动电流下在恒定电流区域中操作; 当VF值小于第一边界值时,LED灯单元被致动以在致动器的连续降压致动电流下在调节区域中操作,直到VF等于第二边界值,并且第二边界 值小于第一个边界值。
    • 4. 发明申请
    • High Voltage Bipolar Transistor with Pseudo Buried Layers
    • 具有伪埋层的高电压双极晶体管
    • US20110140239A1
    • 2011-06-16
    • US12966078
    • 2010-12-13
    • Tzuyin CHIUTungYuan CHUWensheng QIANYungChieh FANJun HUDonghua LIUYukun LV
    • Tzuyin CHIUTungYuan CHUWensheng QIANYungChieh FANJun HUDonghua LIUYukun LV
    • H01L29/70
    • H01L21/76232H01L21/8249H01L27/0623H01L29/0657H01L29/0821H01L29/41708H01L29/66242H01L29/66287H01L29/7322H01L29/7378
    • A high voltage bipolar transistor with shallow trench isolation (STI) comprises the areas of a collector formed by implanting first electric type impurities into active area and connected with pseudo buried layers at two sides; Pseudo buried layers which are formed by implanting high dose first type impurity through the bottoms of STI at two sides if active area, and do not touch directly; deep contact through field oxide to contact pseudo buried layers and pick up the collectors; a base deposited on the collector by epitaxial growth and in-situ doped by second electric type impurity, in which the intrinsic base touches local collector and extrinsic base is used for base pick-up; a emitter which is a polysilicon layer deposited on the intrinsic base and doped with first electric type impurities. This invention makes the depletion region of collector/base junction from 1D (vertical) distribution to 2D (vertical and lateral) distribution. The bipolar transistor's breakdown voltages are increased by only enlarge active critical dimension (CD). This is low-cost process.
    • 具有浅沟槽隔离(STI)的高电压双极晶体管包括通过将第一电型杂质注入有源区并且在两侧与伪掩埋层连接而形成的集电极的区域; 伪埋层是通过在两侧的STI两侧植入高剂量第一类杂质而形成的,如果有活动区域,并且不直接接触; 通过场氧化物深接触接触伪埋层并拾取集电器; 通过外延生长沉积在集电体上并通过第二电型杂质原位掺杂的基极,其中本征基极接触局部集电极和外部基极用于基极拾取; 作为沉积在本征基底上并掺杂有第一电型杂质的多晶硅层的发射极。 本发明使集电极/基极结的耗尽区从1D(垂直)分布到2D(垂直和横向)分布。 双极晶体管的击穿电压仅通过增加主动临界尺寸(CD)来增加。 这是低成本的过程。