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1. 发明申请

US20090289240A1 NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 有权
标题翻译：具有可编程电容的非易失性多位存储器
公开(公告)号：US20090289240A1
公开(公告)日：2009-11-26
申请号：US12123685
申请日：2008-05-20
申请人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
发明人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.
摘要翻译：公开了具有可编程电容的非易失性多位存储器。说明性数据存储单元包括包括源极区和漏极区的衬底。第一绝缘层在衬底上。第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。第一阳极电耦合到第一固体电解质电池。第一固体电解质电池在阳极和绝缘层之间。第二阳极电耦合到第二固体电解质电池。第二固体电解质电池在阳极和绝缘层之间。栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。栅极接触层电耦合到电压源。

2. 发明申请

US20100309717A1 NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 失效
标题翻译：具有可编程电容的非易失性多位存储器
公开(公告)号：US20100309717A1
公开(公告)日：2010-12-09
申请号：US12857717
申请日：2010-08-17
申请人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
发明人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.
摘要翻译：公开了具有可编程电容的非易失性多位存储器。说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。固体电解质电池具有在至少两个状态之间可控制的电容。栅极接触层电耦合到电压源。第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。

3. 发明申请

US20100109107A1 MAGNETIC STACK DESIGN WITH DECREASED SUBSTRATE STRESS 有权
标题翻译：磁性堆叠设计具有减少的基板应力
公开(公告)号：US20100109107A1
公开(公告)日：2010-05-06
申请号：US12389422
申请日：2009-02-20
申请人： Yongchul Ahn , Shuiyuan Huang , Antoine Khoueir , Paul Anderson , Lili Jia , Christina Laura Hutchinson , Ivan Ivanov , Dimitar Dimitrov
发明人： Yongchul Ahn , Shuiyuan Huang , Antoine Khoueir , Paul Anderson , Lili Jia , Christina Laura Hutchinson , Ivan Ivanov , Dimitar Dimitrov
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.
摘要翻译：磁性元件和制造磁性元件的方法。该方法包括图案化第一电极材料以在衬底上形成第一电极，并且在第一电极周围的衬底上沉积填充材料。该方法还包括抛光以形成填料和第一电极的平坦表面。磁性电池形成在平面上，第二电极形成在磁性电池上。在一些实施例中，第一电极具有与磁性电池的面积至少2:1的面积。

4. 发明申请

US20090290408A1 RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE 有权
标题翻译：使用旋转扭矩的可重新配置的磁性逻辑器件
公开(公告)号：US20090290408A1
公开(公告)日：2009-11-26
申请号：US12126014
申请日：2008-05-23
申请人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
发明人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/161
摘要： Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.
摘要翻译：用作存储器件并可根据需要重新配置或重新编程的旋转扭矩磁逻辑器件。在一些实施例中，逻辑器件是单个磁性元件，其中具有钉扎层，自由层和阻挡层，或者在其它实施例中，逻辑器件具有串联的两个磁性元件。可以通过元件施加两个输入电流来配置或编程元件。在使用中，逻辑输入数据（如电流）通过编程元件传递，定义元件上的电阻和由此产生的逻辑输出。磁性逻辑器件可用于一体式的全功能磁芯片。

5. 发明申请

US20050063100A1 Magnetic sensor with adjustable electrical dimensions 有权
标题翻译：具有可调节电气尺寸的磁性传感器
公开(公告)号：US20050063100A1
公开(公告)日：2005-03-24
申请号：US10668437
申请日：2003-09-23
申请人： Michael Kautzky , David Larson , Bradley Miller , Erick Singleton , Dimitar Dimitrov , Eric Granstrom , Song Xue
发明人： Michael Kautzky , David Larson , Bradley Miller , Erick Singleton , Dimitar Dimitrov , Eric Granstrom , Song Xue
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , G11B5/3909 , G11B2005/0018
摘要： A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.
摘要翻译：公开了一种具有可调整的电气尺寸的磁传感器，例如电读宽度和电条高度。磁传感器包括传感器堆叠，其具有相对于传感器堆叠定位的一个或多个偏置电极。传感器堆叠的电气宽度或电气条纹高度是施加到偏置电极的电压的函数。由偏置电极产生的电场改变磁阻器件的电气轮廓。

6. 发明申请

US20110069536A1 RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE 有权
标题翻译：使用旋转扭矩的可重新配置的磁性逻辑器件
公开(公告)号：US20110069536A1
公开(公告)日：2011-03-24
申请号：US12956487
申请日：2010-11-30
申请人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
发明人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
IPC分类号： G11C11/16 , H03K19/168 , H01L29/82
CPC分类号： G11C11/1675 , G11C11/161
摘要： Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.
摘要翻译：用作存储器件并可根据需要重新配置或重新编程的旋转扭矩磁逻辑器件。在一些实施例中，逻辑器件是单个磁性元件，其中具有钉扎层，自由层和阻挡层，或者在其它实施例中，逻辑器件具有串联的两个磁性元件。可以通过元件施加两个输入电流来配置或编程元件。在使用中，逻辑输入数据（如电流）通过编程元件传递，定义元件上的电阻和由此产生的逻辑输出。磁性逻辑器件可用于一体式的全功能磁芯片。

7. 发明申请

US20190162403A1 Solid fuel burner 审中-公开
公开(公告)号：US20190162403A1
公开(公告)日：2019-05-30
申请号：US16306560
申请日：2017-05-30
申请人： Dimitar Dimitrov
发明人： Dimitar Dimitrov
IPC分类号： F23B30/04 , F23B60/02 , F23H15/00 , F24B13/04 , F23K3/08 , F23L9/02
摘要： Slag (28) is formed during the combustion of solid fuels with a lower ash fusion temperature and covers parts of the solid fuel, prevents complete combustion and blocks the air supply, thereby leading to an interruption of the combustion process. According to the invention, the embers and the fusing ashes are mixed by means of a cleaning comb (22) and are discharged from the burner. The burner consists of rotating grate bars (25) which are arranged parallel to one another within the inner walls (1). The cleaning comb (22) moves between the grate bars (25); upwards between the grate bars (25); in direction of the burner opening; downwards under the grate bars; and finally in the direction of the burner flange (7). When the slag (28) adheres to the rotating grate bars (25), it is scraped off by the cleaning comb (22). The fuel supplied to a funnel (8) slides downwards by the force of gravity, the funnel lid (9) opens, and the fuel is pushed onto the grate bars (25) by the plunger (11). The plunger (11) has at least one opening (15) for secondary air (5) which also provides cooling. A blower (13) blows the ashes fallen through the grate bars (25) through a cut-out section in the burner floor (30) opened by the floor trap (20).

8. 发明授权

US08771204B2 Acoustic sensor assembly 有权
标题翻译：声传感器组件
公开(公告)号：US08771204B2
公开(公告)日：2014-07-08
申请号：US12643939
申请日：2009-12-21
申请人： Valery G. Telfort , Predrag Pudar , Dimitar Dimitrov , Phi Trang , Ammar Al-Ali
发明人： Valery G. Telfort , Predrag Pudar , Dimitar Dimitrov , Phi Trang , Ammar Al-Ali
IPC分类号： A61B5/00 , A61B7/00 , A61B7/02 , H04R25/02
CPC分类号： A61B7/003 , A61B5/0205 , A61B5/029 , A61B5/6832 , A61B5/6843 , A61B5/7203 , A61B5/7225 , A61B7/00 , A61B7/04 , A61B2562/0204 , H04R1/46 , H04R17/025 , Y10T29/49005
摘要： An acoustic sensor is configured to provide accurate and robust measurement of bodily sounds under a variety of conditions, such as in noisy environments or in situations in which stress, strain, or movement may be imparted onto a sensor with respect to a patient. Embodiments of the sensor provide a conformable electrical shielding, as well as improved acoustic and mechanical coupling between the sensor and the measurement site.
摘要翻译：声学传感器被配置为在各种条件下提供对身体声音的准确和鲁棒的测量，例如在嘈杂的环境中或者在相对于患者传感器施加应力，应变或运动的情况下。传感器的实施例提供一致的电屏蔽，以及传感器和测量部位之间改进的声学和机械耦合。

9. 发明授权

US08740816B2 Acoustic sensor assembly 有权
公开(公告)号：US08740816B2
公开(公告)日：2014-06-03
申请号：US12643939
申请日：2009-12-21
申请人： Valery G. Telfort , Predrag Pudar , Dimitar Dimitrov , Phi Trang , Ammar Al-Ali
发明人： Valery G. Telfort , Predrag Pudar , Dimitar Dimitrov , Phi Trang , Ammar Al-Ali
IPC分类号： A61B5/00 , A61B7/00 , A61B7/02 , H04R25/02
摘要： An acoustic sensor is configured to provide accurate and robust measurement of bodily sounds under a variety of conditions, such as in noisy environments or in situations in which stress, strain, or movement may be imparted onto a sensor with respect to a patient. Embodiments of the sensor provide a conformable electrical shielding, as well as improved acoustic and mechanical coupling between the sensor and the measurement site.

10. 发明授权

US08098541B2 Non-volatile memory with stray magnetic field compensation 有权
标题翻译：具有杂散磁场补偿的非易失性存储器
公开(公告)号：US08098541B2
公开(公告)日：2012-01-17
申请号：US13084774
申请日：2011-04-12
申请人： Dimitar Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
发明人： Dimitar Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
IPC分类号： G11C8/00
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , H01L43/08
摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.
摘要翻译：一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

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