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    • 7. 发明授权
    • Eigen decomposition based OPC model
    • 基于特征分解的OPC模型
    • US07398508B2
    • 2008-07-08
    • US10981750
    • 2004-11-05
    • Xuelong ShiRobert J. SochaThomas LaidigDouglas Van Den Broeke
    • Xuelong ShiRobert J. SochaThomas LaidigDouglas Van Den Broeke
    • G06F17/50
    • G03F1/36G03F7/705
    • Model OPC is developed based on eigen decomposition of an aerial image expected to be produced by a mask pattern on a surface of a resist. With the eigen decomposition method the aerial image intensity distribution around a point (x, y) is accurately described in the model. A scalar approach may be used in the eigen decomposition model which treats the light wave through the mask as a scalar quantity. A eigen decomposition alternatively may use a vector approach which utilizes a vector to describe the light wave and the pupil function. A predicted SPIF may be generated from the aerial image which may be used to verify the mask modeling process by comparing the predicted SPIF to an experimentally determined SPIF. The model OPC, once calibrated, may be used to evaluate performance of a mask and refine features of the mask.
    • 基于通过抗蚀剂表面上的掩模图案预期产生的空间图像的特征分解开发OPC模型。 利用特征分解方法,在模型中准确描述了点(x,y)周围的空间图像强度分布。 在本征分解模型中可以使用标量法,其将通过掩模的光波视为标量。 本征分解可以使用向量来描述光波和瞳孔函数的矢量方法。 可以从空间图像生成预测的SPIF,其可以用于通过将预测的SPIF与实验确定的SPIF进行比较来验证掩模建模过程。 模型OPC,一旦校准,可以用于评估掩模的性能和细化掩模的特征。
    • 8. 发明授权
    • Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
    • 用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
    • US07550235B2
    • 2009-06-23
    • US10933496
    • 2004-09-03
    • Xuelong ShiJang Fung ChenThomas LaidigKurt E. WamplerDouglas Van Den Broeke
    • Xuelong ShiJang Fung ChenThomas LaidigKurt E. WamplerDouglas Van Den Broeke
    • G03F1/02
    • G03F7/705G03F1/36
    • A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
    • 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤:获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图,所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域,在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图,所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域,将具有第二相位的第二组辅助特征放置在所述掩模设计中,其中所述第一相位不等于所述第二相位。