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1. 发明授权

US07566664B2 Selective etching of MEMS using gaseous halides and reactive co-etchants 失效
标题翻译：使用气态卤化物和反应性辅助蚀刻剂选择性蚀刻MEMS
公开(公告)号：US07566664B2
公开(公告)日：2009-07-28
申请号：US11497726
申请日：2006-08-02
申请人： Xiaoming Yan , Brian Arbuckle , Evgeni Gousev , Ming-Hau Tung
发明人： Xiaoming Yan , Brian Arbuckle , Evgeni Gousev , Ming-Hau Tung
IPC分类号： H01L21/20
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00595 , B81C2201/0132
摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.
摘要翻译：在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

2. 发明申请

US20080032439A1 Selective etching of MEMS using gaseous halides and reactive co-etchants 失效
标题翻译：使用气态卤化物和反应性辅助蚀刻剂选择性蚀刻MEMS
公开(公告)号：US20080032439A1
公开(公告)日：2008-02-07
申请号：US11497726
申请日：2006-08-02
申请人： Xiaoming Yan , Brian Arbuckle , Evgeni Gousev , Ming-Hau Tung
发明人： Xiaoming Yan , Brian Arbuckle , Evgeni Gousev , Ming-Hau Tung
IPC分类号： H01L21/00
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00595 , B81C2201/0132
摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.
摘要翻译：在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

3. 发明授权

US07385744B2 Support structure for free-standing MEMS device and methods for forming the same 失效
标题翻译：独立MEMS装置的支撑结构及其形成方法
公开(公告)号：US07385744B2
公开(公告)日：2008-06-10
申请号：US11476998
申请日：2006-06-28
申请人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
发明人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
IPC分类号： G02B26/08 , G02B26/00
CPC分类号： B81B3/0072
摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material and a deformable layer including a second material. The second material is different from the first material. The deformable layer is mechanically coupled to the functional layer at a junction. The functional layer and the deformable layer have substantially equal internal stresses at the junction.
摘要翻译：微机电（MEMS）装置包括包括第一材料和包括第二材料的可变形层的功能层。第二种材料与第一种材料不同。可变形层在结处机械耦合到功能层。功能层和可变形层在接合处具有基本相等的内应力。

4. 发明申请

US20080003710A1 Support structure for free-standing MEMS device and methods for forming the same 失效
公开(公告)号：US20080003710A1
公开(公告)日：2008-01-03
申请号：US11476998
申请日：2006-06-28
申请人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
发明人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
IPC分类号： H01L21/00
CPC分类号： B81B3/0072
摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material and a deformable layer including a second material. The second material is different from the first material. The deformable layer is mechanically coupled to the functional layer at a junction. The functional layer and the deformable layer have substantially equal internal stresses at the junction.

5. 发明授权

US07835061B2 Support structures for free-standing electromechanical devices 有权
标题翻译：独立机电设备的支撑结构
公开(公告)号：US07835061B2
公开(公告)日：2010-11-16
申请号：US11476317
申请日：2006-06-28
申请人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
发明人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
IPC分类号： G02B26/00
CPC分类号： B81B3/0072 , G02B26/001
摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material, a deformable layer including a second material different from the first material, and a connecting element including the first material. The connecting element is mechanically coupled to the deformable layer and the functional layer. The connecting element and the deformable layer form an interface between the first material and the second material. The interface is spaced from the functional layer.
摘要翻译：微机电（MEMS）装置包括功能层，其包括第一材料，可变形层，其包括不同于第一材料的第二材料，以及包括第一材料的连接元件。连接元件机械耦合到可变形层和功能层。连接元件和可变形层在第一材料和第二材料之间形成界面。界面与功能层间隔开。

6. 发明申请

US20080055707A1 Support structure for free-standing MEMS device and methods for forming the same 有权
标题翻译：独立MEMS装置的支撑结构及其形成方法
公开(公告)号：US20080055707A1
公开(公告)日：2008-03-06
申请号：US11476317
申请日：2006-06-28
申请人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
发明人： Lior Kogut , Ming-Hau Tung , Brian Arbuckle
IPC分类号： G02B26/00
CPC分类号： B81B3/0072 , G02B26/001
摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material, a deformable layer including a second material different from the first material, and a connecting element including the first material. The connecting element is mechanically coupled to the deformable layer and the functional layer. The connecting element and the deformable layer form an interface between the first material and the second material. The interface is spaced from the functional layer.
摘要翻译：微机电（MEMS）装置包括功能层，其包括第一材料，可变形层，其包括不同于第一材料的第二材料，以及包括第一材料的连接元件。连接元件机械耦合到可变形层和功能层。连接元件和可变形层在第一材料和第二材料之间形成界面。界面与功能层间隔开。

7. 发明申请

US20060076311A1 Methods of fabricating interferometric modulators by selectively removing a material 失效
公开(公告)号：US20060076311A1
公开(公告)日：2006-04-13
申请号：US11090552
申请日：2005-03-25
申请人： Ming-Hau Tung , Philip Floyd , Brian Arbuckle
发明人： Ming-Hau Tung , Philip Floyd , Brian Arbuckle
IPC分类号： B29D11/00
CPC分类号： B81C1/00174 , B81B2201/047 , B81B2203/0181 , B81C1/00182 , B81C2201/0109 , G02B26/001
摘要： Methods for making MEMS devices such as interferometric modulators involve selectively removing a sacrificial portion of a material to form an internal cavity, leaving behind a remaining portion of the material to form a post structure. The material may be blanket deposited and selectively altered to define sacrificial portions that are selectively removable relative to the remaining portions. Alternatively, a material layer can be laterally recessed away from openings in a covering layer. These methods may be used to make unreleased and released interferometric modulators.

8. 发明申请

US20060067649A1 Apparatus and method for reducing slippage between structures in an interferometric modulator 失效
公开(公告)号：US20060067649A1
公开(公告)日：2006-03-30
申请号：US11203613
申请日：2005-08-12
申请人： Ming-Hau Tung , Brian Arbuckle , Philip Floyd , William Cummings
发明人： Ming-Hau Tung , Brian Arbuckle , Philip Floyd , William Cummings
IPC分类号： G02B6/00
CPC分类号： G02B26/001
摘要： A support structure within an interferometric modulator device may contact various other structures within the device. Increased bond strengths between the support structure and the other structures may be achieved in various ways, such as by providing roughened surfaces and/or adhesive materials at the interfaces between the support structures and the other structures. In an embodiment, increased adhesion is achieved between a support structure and a substrate layer. In another embodiment, increased adhesion is achieved between a support structure and a moveable layer. Increased adhesion may reduce undesirable slippage between the support structures and the other structures to which they are attached within the interferometric modulator.

9. 发明授权

US09110281B2 Vertically etched facets for display devices 有权
标题翻译：用于显示设备的垂直蚀刻刻面
公开(公告)号：US09110281B2
公开(公告)日：2015-08-18
申请号：US13624530
申请日：2012-09-21
申请人： Ming-Hau Tung , Srinivasan Kodaganallur Ganapathi
发明人： Ming-Hau Tung , Srinivasan Kodaganallur Ganapathi
IPC分类号： G02B26/00 , G02F1/19 , G06F15/00 , G02B5/08 , G06F3/044
CPC分类号： G02B26/001 , G02B5/08 , G02F1/19 , G06F3/044 , G06F15/00
摘要： This disclosure provides systems, methods and apparatus for masked reflective structures which can be integrated into display devices. In one aspect, masks and etch leading layers can be used to control the etching of a stack of layers to form masked reflective structures having a desired profile. In particular, tapered edges at a particular angle can be formed, and the resulting structures used in a roll-to-roll process to fabricate a device component.
摘要翻译：本公开提供了可以集成到显示装置中的用于掩模反射结构的系统，方法和装置。在一个方面，掩模和蚀刻引导层可用于控制层叠层的蚀刻以形成具有所需轮廓的掩模反射结构。特别地，可以形成特定角度的锥形边缘，并且所得到的结构用于卷对卷过程以制造器件部件。

10. 发明授权

US09019590B2 Spatial light modulator with integrated optical compensation structure 有权
标题翻译：具有集成光学补偿结构的空间光调制器
公开(公告)号：US09019590B2
公开(公告)日：2015-04-28
申请号：US13337494
申请日：2011-12-27
申请人： Clarence Chui , Jeffrey B. Sampsell , William J. Cummings , Ming-Hau Tung
发明人： Clarence Chui , Jeffrey B. Sampsell , William J. Cummings , Ming-Hau Tung
IPC分类号： G02B26/00 , G02F1/1335
CPC分类号： G02F1/21 , G02B26/001 , G02F1/1335 , G02F2001/13356
摘要： A spatial light modulator comprises an integrated optical compensation structure, e.g., an optical compensation structure arranged between a substrate and a plurality of individually addressable light-modulating elements, or an optical compensation structure located on the opposite side of the light-modulating elements from the substrate. The individually addressable light-modulating elements are configured to modulate light transmitted through or reflected from the transparent substrate. Methods for making such spatial light modulators involve fabricating an optical compensation structure over a substrate and fabricating a plurality of individually addressable light-modulating elements over the optical compensation structure. The optical compensation structure may be a passive optical compensation structure. The optical compensation structure may include one or more of a supplemental frontlighting source, a diffuser, a black mask, a diffractive optical element, a color filter, an anti-reflective layer, a structure that scatters light, a microlens array, and a holographic film.
摘要翻译：空间光调制器包括集成的光学补偿结构，例如，布置在基板和多个可单独寻址的光调制元件之间的光学补偿结构，或位于光调制元件的相对侧上的光学补偿结构基质。可单独寻址的光调制元件被配置为调制透射通过或从透明基板反射的光。制造这种空间光调制器的方法包括在衬底上制造光学补偿结构，并在光学补偿结构上制造多个单独可寻址的光调制元件。光学补偿结构可以是无源光学补偿结构。光学补偿结构可以包括补充前照明光源，漫射器，黑色掩模，衍射光学元件，滤色器，抗反射层，散射光的结构，微透镜阵列和全息图中的一个或多个电影。

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