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1. 发明授权

US09202480B2 Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer 有权
标题翻译：用于大马士革垂直磁记录（PMR）作者的双重图案化硬掩模
公开(公告)号：US09202480B2
公开(公告)日：2015-12-01
申请号：US12579316
申请日：2009-10-14
申请人： Xiaohai Xiang , Yun-Fei Li , Jinqiu Zhang , Hongping Yuan , Xianzhong Zeng , Hai Sun
发明人： Xiaohai Xiang , Yun-Fei Li , Jinqiu Zhang , Hongping Yuan , Xianzhong Zeng , Hai Sun
IPC分类号： B44C1/22 , C03C15/00 , H01L21/4763 , G11B5/31 , G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T428/11
摘要： Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.
摘要翻译：本发明公开的各种实施例提供一种双重图案化工艺，其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。在一个实施例中，提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。该方法包括在绝缘体层上形成硬掩模层，执行第一图案化工艺以在硬掩模层中形成极和轭开口，执行第二图案化处理以去除硬掩模中的极和轭开口的圆角去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分，以在绝缘体层中形成沟槽，并用磁性材料填充沟槽。

2. 发明授权

US08486285B2 Damascene write poles produced via full film plating 失效
标题翻译：大马士革通过全电镀制作电极
公开(公告)号：US08486285B2
公开(公告)日：2013-07-16
申请号：US12544998
申请日：2009-08-20
申请人： Ronghui Zhou , Ming Jiang , Xiaohai Xiang , Jinwen Wang , Guanghong Luo , Yun-Fei Li
发明人： Ronghui Zhou , Ming Jiang , Xiaohai Xiang , Jinwen Wang , Guanghong Luo , Yun-Fei Li
IPC分类号： B44C1/22
CPC分类号： G11B5/855 , Y10T29/49048
摘要： A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.
摘要翻译：用于形成写极的方法包括在晶片的衬底层上形成阻挡层，所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口，以及在停止层上形成缓冲层，所述缓冲层具有在停止层的开口上方开口。该方法还包括在晶片上镀覆一层磁性材料，在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料，在晶片上进行研磨或蚀刻操作，以去除第一牺牲材料并且去除第一牺牲材料，在晶片上设置第二牺牲材料，以及在晶片上执行抛光操作以去除镶嵌沟槽，第二牺牲材料和缓冲层之上的磁性材料的区域。

3. 发明授权

US08225488B1 Method for providing a perpendicular magnetic recording (PMR) pole 有权
标题翻译：提供垂直磁记录（PMR）极的方法
公开(公告)号：US08225488B1
公开(公告)日：2012-07-24
申请号：US12471278
申请日：2009-05-22
申请人： Jinqiu Zhang , Yun-Fei Li , Ying Hong
发明人： Jinqiu Zhang , Yun-Fei Li , Ying Hong
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for providing a PMR pole in a magnetic recording transducer comprises providing a mask on an intermediate layer, the mask including a line having at least one side, providing a hard mask on the mask, a first portion of the hard mask residing on the at least one side and a second portion residing on a surface of the intermediate layer, the hard mask including a dry-etchable layer and a high removal ratio layer on the dry-etchable layer, removing at least part of the first portion of the hard mask, at least a portion of the line being exposed, removing the line, thereby providing an aperture in the hard mask corresponding to the line, forming a trench in the intermediate layer under the aperture using a removal process, and providing the PMR pole, at least a portion of the PMR pole residing in the trench.
摘要翻译：用于在磁记录换能器中提供PMR极的方法包括在中间层上提供掩模，所述掩模包括具有至少一个侧面的线，在所述掩模上提供硬掩模，所述硬掩模的位于所述掩模上的第一部分驻留在中间层的表面上的至少一个侧面和第二部分，该硬掩模包括在该可干蚀刻层上的可干蚀刻层和高去除率层，去除硬的第一部分的至少一部分掩模，线的至少一部分被暴露，去除线，从而在对应于线的硬掩模中提供孔，使用去除过程在孔下方的中间层中形成沟槽，以及提供PMR极， PMR极的至少一部分位于沟槽中。

4. 发明授权

US07688555B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US07688555B2
公开(公告)日：2010-03-30
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

5. 发明授权

US07336452B2 Patterned exchange bias GMR using metallic buffer layer 失效
标题翻译：图案交换偏置GMR使用金属缓冲层
公开(公告)号：US07336452B2
公开(公告)日：2008-02-26
申请号：US11036957
申请日：2005-01-14
申请人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
发明人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49036 , Y10T29/49044 , Y10T29/49046
摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.
摘要翻译：在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。这样的结构很难制造。本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。还描述了用于制造该结构的方法。

6. 发明授权

US07327540B2 Hard biased materials for recording head applications 失效
标题翻译：用于记录头应用的硬偏置材料
公开(公告)号：US07327540B2
公开(公告)日：2008-02-05
申请号：US10858029
申请日：2004-06-01
申请人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/11 , Y10T428/115
摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.
摘要翻译：公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

7. 发明申请

US20060126231A1 Composite free layer for CIP GMR device 失效
标题翻译： CIP GMR器件的复合自由层
公开(公告)号：US20060126231A1
公开(公告)日：2006-06-15
申请号：US11010105
申请日：2004-12-10
申请人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , H01L43/10
摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.
摘要翻译：在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。还描述了用于制造该装置的方法。

8. 发明申请

US20060061916A1 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US20060061916A1
公开(公告)日：2006-03-23
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

9. 发明申请

US20050275975A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20050275975A1
公开(公告)日：2005-12-15
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

10. 发明申请

US20050122637A1 Transverse or longitudinal patterned synthetic exchange biasing for stabilizing GMR sensors 失效
公开(公告)号：US20050122637A1
公开(公告)日：2005-06-09
申请号：US11036529
申请日：2005-01-14
申请人： Cheng Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , YouFeng Zheng , Simon Liao , Kochan Ju , Cherng Han
发明人： Cheng Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , YouFeng Zheng , Simon Liao , Kochan Ju , Cherng Han
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

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