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1. 发明申请

US20130045383A1 ARRAY OF TITANIUM DIOXIDE NANOSTRUCTURES FOR SOLAR ENERGY UTILIZATION 有权
标题翻译：二氧化钛纳米结构太阳能利用阵列
公开(公告)号：US20130045383A1
公开(公告)日：2013-02-21
申请号：US13213923
申请日：2011-08-19
申请人： Xiaofeng Qiu , Mariappan Parans Paranthaman , Miaofang Chi , Ilia N. Ivanov , Zhenyu Zhang
发明人： Xiaofeng Qiu , Mariappan Parans Paranthaman , Miaofang Chi , Ilia N. Ivanov , Zhenyu Zhang
IPC分类号： B32B3/00 , B32B5/02 , H01L31/18 , H01B1/08
CPC分类号： H01B1/08 , H01L31/035218 , H01L31/035281 , H01L31/18 , Y02E10/50 , Y10T428/2913 , Y10T428/298
摘要： An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.
摘要翻译：用于太阳能利用的二氧化钛纳米结构的阵列包括多个纳米管，每个纳米管包括与内层同轴的外层，其中内层包含p型二氧化钛，外层包含n型二氧化钛。内层和外层之间的界面限定了p-n结。

2. 发明授权

US08920767B2 Array of titanium dioxide nanostructures for solar energy utilization 有权
标题翻译：用于太阳能利用的二氧化钛纳米结构阵列
公开(公告)号：US08920767B2
公开(公告)日：2014-12-30
申请号：US13213923
申请日：2011-08-19
申请人： Xiaofeng Qiu , Mariappan Parans Paranthaman , Miaofang Chi , Ilia N. Ivanov , Zhenyu Zhang
发明人： Xiaofeng Qiu , Mariappan Parans Paranthaman , Miaofang Chi , Ilia N. Ivanov , Zhenyu Zhang
IPC分类号： C01G23/047 , H01L31/0352 , H01B1/08 , H01L31/18
CPC分类号： H01B1/08 , H01L31/035218 , H01L31/035281 , H01L31/18 , Y02E10/50 , Y10T428/2913 , Y10T428/298
摘要： An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.
摘要翻译：用于太阳能利用的二氧化钛纳米结构的阵列包括多个纳米管，每个纳米管包括与内层同轴的外层，其中内层包含p型二氧化钛，外层包含n型二氧化钛。内层和外层之间的界面限定了p-n结。

3. 发明申请

US20120082904A1 HIGH ENERGY DENSITY ALUMINUM BATTERY 审中-公开
标题翻译：高能量密度铝电池
公开(公告)号：US20120082904A1
公开(公告)日：2012-04-05
申请号：US12895487
申请日：2010-09-30
申请人： Gilbert M. Brown , Mariappan Parans Paranthaman , Sheng Dai , Nancy J. Dudney , Arumugan Manthiram , Timothy J. Mclntyre , Xiago-Guang Sun
发明人： Gilbert M. Brown , Mariappan Parans Paranthaman , Sheng Dai , Nancy J. Dudney , Arumugan Manthiram , Timothy J. Mclntyre , Xiago-Guang Sun
IPC分类号： H01M10/02 , H01M4/58 , H01M6/16 , H01M6/04 , H01M10/04 , H01M4/50 , H01M4/02
CPC分类号： H01M10/054 , H01M4/38 , H01M4/463 , H01M4/483 , H01M4/502 , H01M4/582 , H01M6/14 , H01M6/164 , H01M10/056 , H01M10/0568 , H01M10/0569 , H01M2300/0045 , Y10T29/49108
摘要： Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum ions during a discharge cycle and deintercalating the aluminum ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum at the cathode.
摘要翻译：为高能量密度铝电池提供组合物和制备方法。电池包括包含铝金属的阳极。电池还包括阴极，其包括能够在放电循环期间插入铝离子并在充电循环期间使铝离子脱嵌的材料。电池还包括能够支持在阳极处可逆地沉积和剥离铝的电解质，以及在阴极可逆插入和脱铝。

4. 发明授权

US08647915B2 Hetero-junction photovoltaic device and method of fabricating the device 有权
标题翻译：异质结光伏器件及其制造方法
公开(公告)号：US08647915B2
公开(公告)日：2014-02-11
申请号：US12974425
申请日：2010-12-21
申请人： Tolga Aytug , David K. Christen , Mariappan Parans Paranthaman , Özgur Polat
发明人： Tolga Aytug , David K. Christen , Mariappan Parans Paranthaman , Özgur Polat
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/032 , H01L31/047 , H01L31/072 , H01L31/18 , Y02E10/50
摘要： A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.
摘要翻译：一种异相结器件和制造方法，其中相分离的n型和p型半导体柱限定在衬底上方延伸的垂直取向的p-n结。选择半导体材料用于热力学稳定且基本上彼此不溶的p型和n型支柱。使用外延沉积工艺在成核层上形成支柱，并且相互不溶性驱动材料的相分离。在外延沉积工艺期间，取向是使成核层开始垂直列的传播，导致整个沉积材料的基本有序的三维结构。 p型或n型半导体材料中的一种的至少一部分的氧化态相对于另一种改变，使得半导体材料的带隙能量相对于化学计量组成不同，并且器件优先吸收特定选定的辐射带。

5. 发明申请

US20120264615A1 CHEMICAL SOLUTION SEED LAYER FOR RABITS TAPES 有权
标题翻译：化学解决方案用于RABITS TAPES的种子层
公开(公告)号：US20120264615A1
公开(公告)日：2012-10-18
申请号：US13088182
申请日：2011-04-15
申请人： Amit Goyal , Mariappan Parans Paranthaman , Sung Hun Wee
发明人： Amit Goyal , Mariappan Parans Paranthaman , Sung Hun Wee
IPC分类号： H01L39/24 , C30B19/00
CPC分类号： H01B12/00 , C30B5/00 , C30B29/22 , C30B29/225 , H01L39/126 , H01L39/24 , H01L39/2425 , H01L39/2461
摘要： A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.
摘要翻译：制造超导制品的方法包括提供双轴织构化基底的步骤。然后沉积种子层。种子层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的稀土或过渡金属阳离子。外延生长超导体层，使得超导体层由种子层支撑。

6. 发明申请

US20110160066A1 METHOD FOR PRODUCING MICROSTRUCTURED TEMPLATES AND THEIR USE IN PROVIDING PINNING ENHANCEMENTS IN SUPERCONDUCTING FILMS DEPOSITED THEREON 有权
标题翻译：用于生产微结构模板的方法及其在提供其中的超导膜中的针刺增强中的用途
公开(公告)号：US20110160066A1
公开(公告)日：2011-06-30
申请号：US12648748
申请日：2009-12-29
申请人： Tolga Aytug , Mariappan Parans Paranthaman , Ozgur Polat
发明人： Tolga Aytug , Mariappan Parans Paranthaman , Ozgur Polat
IPC分类号： H01L39/24 , C23C14/34 , C23C14/35
CPC分类号： H01L39/2483 , C23C14/024 , C23C14/08 , C23C14/35 , C23C14/5806 , H01L39/2461 , Y10T428/25
摘要： The present invention relates to a method for producing a phase-separated layer useful as a flux pinning substrate for a superconducting film, wherein the method includes subjecting at least a first and a second target material to a sputtering deposition technique in order that a phase-separated layer is deposited epitaxially on a primary substrate containing an ordered surface layer. The invention is also directed to a method for producing a superconducting tape containing pinning defects therein by depositing a superconducting film on a phase-separated layer produced by the method described above.
摘要翻译：本发明涉及一种用于制造用作超导膜的磁通钉扎基材的相分离层的方法，其中该方法包括使至少第一和第二靶材料进行溅射沉积技术，外层分层沉积在含有有序表面层的主基底上。本发明还涉及通过在通过上述方法制备的相分离层上沉积超导膜来制造其中含有钉扎缺陷的超导带的方法。

7. 发明授权

US07258928B2 Doped Y2O3 buffer layers for laminated conductors 失效
公开(公告)号：US07258928B2
公开(公告)日：2007-08-21
申请号：US11192488
申请日：2005-07-29
申请人： Mariappan Parans Paranthaman , Urs Schoop , Amit Goyal , Cornelis Leo Hans Thieme , Darren T. Verebelyi , Martin W. Rupich
发明人： Mariappan Parans Paranthaman , Urs Schoop , Amit Goyal , Cornelis Leo Hans Thieme , Darren T. Verebelyi , Martin W. Rupich
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： C23C14/083 , H01L39/2461
摘要： A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y2O3 and a dopant for blocking cation diffusion through the Y2O3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

8. 发明授权

US08486864B2 Method for producing microstructured templates and their use in providing pinning enhancements in superconducting films deposited thereon 有权
标题翻译：用于生产微结构模板的方法及其用于在其上沉积的超导膜中提供钉扎增强的用途
公开(公告)号：US08486864B2
公开(公告)日：2013-07-16
申请号：US12648748
申请日：2009-12-29
申请人： Tolga Aytug , Mariappan Parans Paranthaman , Ozgur Polat
发明人： Tolga Aytug , Mariappan Parans Paranthaman , Ozgur Polat
IPC分类号： H01L39/24 , C23C14/34
CPC分类号： H01L39/2483 , C23C14/024 , C23C14/08 , C23C14/35 , C23C14/5806 , H01L39/2461 , Y10T428/25
摘要： The present invention relates to a method for producing a phase-separated layer useful as a flux pinning substrate for a superconducting film, wherein the method includes subjecting at least a first and a second target material to a sputtering deposition technique in order that a phase-separated layer is deposited epitaxially on a primary substrate containing an ordered surface layer. The invention is also directed to a method for producing a superconducting tape containing pinning defects therein by depositing a superconducting film on a phase-separated layer produced by the method described above.
摘要翻译：本发明涉及一种用于制造用作超导膜的磁通钉扎基材的相分离层的方法，其中该方法包括至少使第一和第二靶材料进行溅射沉积技术，外层分层沉积在含有有序表面层的主基底上。本发明还涉及通过在通过上述方法制备的相分离层上沉积超导膜来制造其中含有钉扎缺陷的超导带的方法。

9. 发明申请

US20120082905A1 HIGH ENERGY DENSITY ALUMINUM BATTERY 有权
标题翻译：高能量密度铝电池
公开(公告)号：US20120082905A1
公开(公告)日：2012-04-05
申请号：US13247417
申请日：2011-09-28
申请人： Gilbert M. Brown , Mariappan Parans Paranthaman , Sheng Dai , Nancy J. Dudney , Arumugan Manthiram , Timothy J. McIntyre , Xiago-Guang Sun , Hansan Liu
发明人： Gilbert M. Brown , Mariappan Parans Paranthaman , Sheng Dai , Nancy J. Dudney , Arumugan Manthiram , Timothy J. McIntyre , Xiago-Guang Sun , Hansan Liu
IPC分类号： H01M10/056 , H01M4/46 , H01M6/04 , H01M4/50 , H01M4/48 , H01M4/58 , H01M4/38 , H01M4/42
CPC分类号： H01M10/054 , H01M4/38 , H01M4/463 , H01M4/50 , H01M6/16 , H01M10/0525 , H01M10/056 , H01M10/0568 , H01M10/0569 , H01M10/058 , H01M2300/0028 , Y02E60/122 , Y10T29/49108
摘要： Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum or lithium ions during a discharge cycle and deintercalating the aluminum or lithium ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum or lithium at the cathode.
摘要翻译：为高能量密度铝电池提供组合物和制备方法。电池包括包含铝金属的阳极。电池还包括阴极，其包括能够在放电循环期间插入铝或锂离子的材料，并且在充电循环期间使铝或锂离子脱嵌。电池还包括能够支持在阳极处可逆沉积和剥离铝的电解质，以及在阴极处可逆地插入和脱嵌铝或锂。

10. 发明申请

US20120192937A1 THIN FILM STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS 审中-公开
标题翻译：光伏应用薄膜结构
公开(公告)号：US20120192937A1
公开(公告)日：2012-08-02
申请号：US13016460
申请日：2011-01-28
申请人： Mariappan Parans Paranthaman , Sung-Hun Wee , Frederick A. List, III , Claudia Cantoni , Lee Heatherly, JR. , Kyunghoon Kim , Thomas R. Fanning , Jon Bornstein
发明人： Mariappan Parans Paranthaman , Sung-Hun Wee , Frederick A. List, III , Claudia Cantoni , Lee Heatherly, JR. , Kyunghoon Kim , Thomas R. Fanning , Jon Bornstein
IPC分类号： H01L31/02 , H01L31/0368
CPC分类号： H01L31/03921 , H01L31/02366 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A thin film structure for photovoltaic applications includes a biaxially textured metal substrate; a seed layer epitaxially disposed on the metal substrate; a barrier layer comprising SrTiO3 epitaxially disposed on the seed layer; a cap layer comprising γ-Al2O3 epitaxially disposed on the SrTiO3 barrier layer; and a crystalline silicon layer epitaxially disposed on the cap layer, where the cap layer comprises a volume fraction of biaxial texture of at least about 80% and the crystalline silicon layer does not include a metal silicide phase.
摘要翻译：用于光伏应用的薄膜结构包括双轴织构的金属基底; 外延地设置在所述金属基板上的籽晶层; 外延地设置在种子层上的包含SrTiO 3的阻挡层; 包含外延设置在SrTiO3阻挡层上的γ-Al2O3的覆盖层; 以及外延地设置在所述盖层上的晶体硅层，其中所述盖层包括至少约80％的双轴织构的体积分数，并且所述晶体硅层不包括金属硅化物相。

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