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1. 发明申请

US20080026532A1 Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays 审中-公开
标题翻译：具有纳米功能的存储器件和各向异性电荷携带阵列
公开(公告)号：US20080026532A1
公开(公告)日：2008-01-31
申请号：US11850127
申请日：2007-09-05
申请人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
发明人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
IPC分类号： H01L21/336
CPC分类号： H01L29/7887 , B82Y10/00 , G03G5/00 , G03G5/02 , G03G5/04 , G03G5/043 , G03G5/08 , G03G5/082 , G03G5/08214 , G11C11/56 , G11C13/02 , G11C13/025 , G11C2213/17 , G11C2213/18 , G11C2216/08 , H01L29/40114 , H01L29/42332 , H01L29/7881 , Y10S977/774 , Y10S977/785 , Y10S977/936
摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.
摘要翻译：描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。在纳米元件的薄膜上形成栅极接触。纳米元件允许减少横向电荷转移。存储器件可以是单个或多个存储器件。在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。

2. 发明申请

US20070247904A1 Nano-enabled memory devices and anisotropic charge carrying arrays 审中-公开
标题翻译：具有纳米功能的存储器件和各向异性带电载体阵列
公开(公告)号：US20070247904A1
公开(公告)日：2007-10-25
申请号：US11766980
申请日：2007-06-22
申请人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
发明人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
IPC分类号： G11C16/04
CPC分类号： H01L29/7887 , B82Y10/00 , G03G5/00 , G03G5/02 , G03G5/04 , G03G5/043 , G03G5/08 , G03G5/082 , G03G5/08214 , G11C11/56 , G11C13/02 , G11C13/025 , G11C2213/17 , G11C2213/18 , G11C2216/08 , H01L29/40114 , H01L29/42332 , H01L29/7881 , Y10S977/774 , Y10S977/785 , Y10S977/936
摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.
摘要翻译：描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。在纳米元件的薄膜上形成栅极接触。纳米元件允许减少横向电荷转移。存储器件可以是单个或多个存储器件。在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。

3. 发明申请

US20050201149A1 Nano-enabled memory devices and anisotropic charge carrying arrays 有权
标题翻译：具有纳米功能的存储器件和各向异性带电载体阵列
公开(公告)号：US20050201149A1
公开(公告)日：2005-09-15
申请号：US11018572
申请日：2004-12-21
申请人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
发明人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
IPC分类号： G11C16/04 , H01L21/28 , H01L29/423 , H01L29/788
CPC分类号： G11C11/56 , B82Y10/00 , G03G5/00 , G03G5/02 , G03G5/04 , G03G5/043 , G03G5/08 , G03G5/082 , G03G5/08214 , G11C13/02 , G11C13/025 , G11C2213/17 , G11C2213/18 , G11C2216/08 , H01L21/28273 , H01L21/28282 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42332 , H01L29/7881 , H01L29/7887 , Y10S977/936 , Y10S977/943
摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.
摘要翻译：描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。在纳米元件的薄膜上形成栅极接触。纳米元件允许减少横向电荷转移。存储器件可以是单个或多个存储器件。在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。

4. 发明申请

US20070187768A1 Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays 有权
标题翻译：具有纳米功能的存储器件和各向异性电荷携带阵列
公开(公告)号：US20070187768A1
公开(公告)日：2007-08-16
申请号：US11695728
申请日：2007-04-03
申请人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
发明人： Xiangfeng Duan , Calvin Chow , David Heald , Chunming Niu , J. Parce , David Stumbo
IPC分类号： H01L29/94
CPC分类号： H01L21/28273 , B82Y10/00 , G03G5/00 , G03G5/02 , G03G5/04 , G03G5/043 , G03G5/08 , G03G5/082 , G03G5/08214 , G11C11/56 , G11C13/02 , G11C13/025 , G11C2213/17 , G11C2213/18 , G11C2216/08 , H01L29/42332 , H01L29/7881 , H01L29/7887 , Y10S977/774 , Y10S977/785 , Y10S977/936
摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.
摘要翻译：描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。在纳米元件的薄膜上形成栅极接触。纳米元件允许减少横向电荷转移。存储器件可以是单个或多个存储器件。在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。

5. 发明申请

US20050202615A1 Nano-enabled memory devices and anisotropic charge carrying arrays 审中-公开
标题翻译：具有纳米功能的存储器件和各向异性带电载体阵列
公开(公告)号：US20050202615A1
公开(公告)日：2005-09-15
申请号：US10796413
申请日：2004-03-10
申请人： Xiangfeng Duan , Chunming Niu , David Stumbo , Calvin Chow
发明人： Xiangfeng Duan , Chunming Niu , David Stumbo , Calvin Chow
IPC分类号： H01L21/8234
CPC分类号： G11C16/0408 , B82Y10/00 , H01L29/0673 , H01L29/068 , H01L29/40114 , H01L29/42332 , H01L29/66825 , H01L29/7887
摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A thin film of nanoelements is formed on the substrate above a channel region. A gate contact is formed on the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device, nanoelements are present having a plurality of charge injection voltages, to provide multiple states. In another aspect, a printing device includes a charge diffusion layer that includes a matrix containing a plurality of nanoelements configured to be anisotropically electrically conductive through the charge diffusion layer to transfer charge to areas of the first surface with reduced lateral charge spread.
摘要翻译：描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。在通道区域上方的衬底上形成纳米元素的薄膜。在纳米元件的薄膜上形成栅极接触。纳米元件允许减少横向电荷转移。存储器件可以是单个或多个存储器件。在多状态存储器件中，纳米元件具有多个电荷注入电压，以提供多种状态。另一方面，印刷装置包括电荷扩散层，该电荷扩散层包括通过电荷扩散层构成为各向异性导电的多个纳米元素的基体，以将电荷转移到具有减小的横向电荷扩展的第一表面的区域。

6. 发明申请

US20050064185A1 System and process for producing nanowire composites and electronic substrates therefrom 有权
标题翻译：用于生产纳米线复合材料和电子基材的系统和工艺
公开(公告)号：US20050064185A1
公开(公告)日：2005-03-24
申请号：US10910800
申请日：2004-08-04
申请人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Parce , Linda Romano , David Stumbo
发明人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Parce , Linda Romano , David Stumbo
IPC分类号： D02G3/00 , H01L21/336 , H01L21/44 , H01L29/06 , H01L29/423 , H01L29/786 , H01L33/06 , H01L33/24 , H01L51/00 , H01L51/05
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally comprises separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步任选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

7. 发明申请

US20070238314A1 System and process for producing nanowire composites and electronic substrates therefrom 有权
标题翻译：用于生产纳米线复合材料和电子基材的系统和工艺
公开(公告)号：US20070238314A1
公开(公告)日：2007-10-11
申请号：US11225951
申请日：2005-09-14
申请人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Parce , Linda Romano , David Stumbo
发明人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Parce , Linda Romano , David Stumbo
IPC分类号： H01L21/31
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally comprises separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步任选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

8. 发明申请

US20100323500A1 System and Process for Producing Nanowire Composites and Electronic Substrates Therefrom 审中-公开
标题翻译：用于生产纳米线复合材料和电子基板的系统和工艺
公开(公告)号：US20100323500A1
公开(公告)日：2010-12-23
申请号：US12854323
申请日：2010-08-11
申请人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David Stumbo
发明人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David Stumbo
IPC分类号： H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

9. 发明申请

US20090075468A1 System and Process for Producing Nanowire Composites and Electronic Substrates Therefrom 有权
标题翻译：用于生产纳米线复合材料和电子基板的系统和工艺
公开(公告)号：US20090075468A1
公开(公告)日：2009-03-19
申请号：US12274904
申请日：2008-11-20
申请人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David Stumbo
发明人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David Stumbo
IPC分类号： H01L21/28
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

10. 发明申请

US20050230356A1 Methods of making, positioning and orienting nanostructures, nanostructure arrays and nanostructure devices 有权
标题翻译：制备，定位和取向纳米结构，纳米结构阵列和纳米结构器件的方法
公开(公告)号：US20050230356A1
公开(公告)日：2005-10-20
申请号：US11142563
申请日：2005-05-31
申请人： Stephen Empedocles , Larry Bock , Calvin Chow , Xianfeng Duan , Chunming Niu , George Pontis , Vijendra Sahi , Linda Romano , David Stumbo
发明人： Stephen Empedocles , Larry Bock , Calvin Chow , Xianfeng Duan , Chunming Niu , George Pontis , Vijendra Sahi , Linda Romano , David Stumbo
IPC分类号： B81C99/00 , C23F1/00 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0048 , B01J23/52 , B81B2203/0361 , B81B2207/015 , B81C3/005 , B81C99/008 , B81C2203/057 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B5/743 , G11C2213/81 , H01L29/7869 , H01L51/0001 , H01L51/0595 , H01L2924/0002 , Y10S438/962 , Y10S977/762 , Y10S977/856 , Y10S977/857 , Y10S977/858 , Y10S977/89 , H01L2924/00
摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.
摘要翻译：提供了将纳米结构组装成功能元件如结，阵列和器件的纳米结构制造方法和方法。还提供了实施方法的系统。

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