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1. 发明申请

WO2009156993A3 METHOD FOR NON-CONTACT MATERIALS DEPOSITION 审中-公开
标题翻译：非接触材料沉积方法
公开(公告)号：WO2009156993A3
公开(公告)日：2010-04-01
申请号：PCT/IL2009000628
申请日：2009-06-24
申请人： XJET LTD , GOTHAIT HANAN , DOVRAT MICHAEL , BAHARAV OFIR , BENICHOU AXEL
发明人： GOTHAIT HANAN , DOVRAT MICHAEL , BAHARAV OFIR , BENICHOU AXEL
IPC分类号： H05K3/12 , B41J2/155
CPC分类号： H05K3/125 , H05K2203/013
摘要： Embodiments of the invention are directed to a method of printing lines. The method may include depositing material on a substrate from a plurality of nozzles to form a multi-layered line of a desired cross section area or a desired height by dispensing the material in at least two layers in a single scan. Each layer may be printed by different nozzles and the number of layers in the line is determined based on the desired cross section area or height.
摘要翻译：本发明的实施例涉及一种印刷线的方法。该方法可以包括从多个喷嘴在衬底上沉积材料以通过在单次扫描中以至少两层分配材料来形成期望的横截面积或期望高度的多层线。每个层可以由不同的喷嘴打印，并且基于期望的横截面面积或高度来确定线中的层数。

2. 发明申请

WO2011095968A2 FABRICATION OF CONTACTS FOR SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：半导体衬底接触的制造
公开(公告)号：WO2011095968A2
公开(公告)日：2011-08-11
申请号：PCT/IL2011000112
申请日：2011-01-31
申请人： XJET LTD , PELEG RAN ASHER , DOVRAT MICHAEL , KRITCHMAN ELIAHU M
发明人： PELEG RAN ASHER , DOVRAT MICHAEL , KRITCHMAN ELIAHU M
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A method for fabricating electric contacts for a semiconductor substrate includes depositing a first line of a first conducting material on the semiconductor substrate and depositing a second line of a second conducting material on the substrate, so as to cross the first line. The first conducting material and the second conducting material may differ from one another in that the first conducting material and the second conducting material penetrate into the substrate to different depths when subjected to a heat treatment. Furthermore, materials may differ from one another in that an electrical connection formed between the substrate and the first conducting material when subjected to the heat treatment differs in its contact resistivity from an electrical connection formed between the substrate and the second conducting material when subjected to the heat treatment. Alternatively, the method may include depositing a first line of a conducting material on the substrate, the first line including a zone of reduced thickness, and depositing a second line of a conducting material on the substrate, so as to cross the first line at the zone of the reduced thickness.
摘要翻译：一种用于制造用于半导体衬底的电触头的方法，包括在半导体衬底上沉积第一导电材料的第一线，并在衬底上沉积第二导电材料的第二线，以跨过第一线。第一导电材料和第二导电材料可以彼此不同，因为当进行热处理时，第一导电材料和第二导电材料在基板中渗透到不同的深度。此外，材料可以彼此不同，因为当经受热处理时，在基板和第一导电材料之间形成的电连接的接触电阻与当基板和第二导电材料之间形成的电连接受到热处理。或者，该方法可以包括在衬底上沉积导电材料的第一线，第一线包括厚度减小的区域，以及在衬底上沉积导电材料的第二线，从而在第厚度减小的区域。

3. 发明申请

WO2004060495A2 A GATE FOR A PADDLE AND BALL GAME 审中-公开
标题翻译：一个PADDLE和BALL游戏的门
公开(公告)号：WO2004060495A2
公开(公告)日：2004-07-22
申请号：PCT/IL2004000007
申请日：2004-01-06
申请人： DOVRAT MICHAEL , NAVE EITHAN
发明人： DOVRAT MICHAEL , NAVE EITHAN
IPC分类号： A63B20060101 , A63B63/00 , A63B63/08 , A63B67/00 , A63B71/02 , A63B
CPC分类号： A63B63/00 , A63B63/083 , A63B67/002 , A63B71/021 , A63B71/022 , A63B71/023 , A63B2063/002 , A63B2210/50
摘要： The invention relates to a gate apparatus for a paddle and ball game, to a game including the same and to methods for playing the game. The gate apparatus comprises a frame for delimiting a closed region above the ground for a ball to be transferred therethrough and a base element for elevating and stabilizing the frame above the ground. The gate can be permanently installed or can be a portable gate. Preferably the gate is assembled from components disengageably connected to each other.
摘要翻译：本发明涉及一种用于桨式和球型游戏的门装置，涉及包括该门的装置和用于玩游戏的方法。门装置包括用于限定地面上方的封闭区域的框架，用于通过其中转移的球，以及用于升高和稳定框架在地面上方的基座元件。门可以永久安装，也可以是便携式门。优选地，门从彼此可分离地连接的部件组装。

4. 发明公开

EP2373590A4 METHOD AND SYSTEM FOR APPLYING MATERIALS ON A SUBSTRATE 有权
标题翻译：方法和系统申请资料上的衬底
公开(公告)号：EP2373590A4
公开(公告)日：2012-06-06
申请号：EP09828731
申请日：2009-11-30
申请人： XJET LTD
发明人： DOVRAT MICHAEL , PELEG RAN ASHER , HADAR AMIR , GOTHAIT HANAN
IPC分类号： H05K3/12 , B41J2/155
CPC分类号： H01L21/288 , B41J2/155 , B41J3/543 , B41J25/001 , B41J2202/04 , B41J2202/21 , B41M1/22 , B41M5/0047 , C23C4/01 , H01L31/0504 , H05K3/125 , H05K2201/09236

5. 发明公开

EP2856510A4 SOLAR CELL ELECTRICALLY CONDUCTIVE STRUCTURE AND METHOD 审中-公开
标题翻译：导电结构用于太阳能电池及其方法
公开(公告)号：EP2856510A4
公开(公告)日：2016-03-23
申请号：EP13796360
申请日：2013-05-28
申请人： XJET LTD
发明人： KRITCHMAN ELIAHU M , BAHARAV OFIR , DOVRAT MICHAEL , LAVID LIOR , GOTHAIT HANAN
IPC分类号： H01L31/0224
CPC分类号： H01L31/0201 , H01L31/022433 , Y02E10/50

6. 发明公开

EP2377159A4 CUSTOMIZED METALLIZATION PATTERNS DURING FABRICATION OF SEMICONDUCTOR DEVICES 审中-公开
标题翻译： CUSTOM金属化生产过程中的半导体元件
公开(公告)号：EP2377159A4
公开(公告)日：2012-10-31
申请号：EP09831567
申请日：2009-12-10
申请人： XJET LTD
发明人： DOVRAT MICHAEL
IPC分类号： H01L31/0224 , H01L31/0368 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/0368 , H01L31/182 , Y02E10/546 , Y02P70/521

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