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    • 1. 发明授权
    • Light emitting display and thin film transistor (TFT)
    • 发光显示器和薄膜晶体管(TFT)
    • US09196747B2
    • 2015-11-24
    • US11448684
    • 2006-06-08
    • Woong-Sik Choi
    • Woong-Sik Choi
    • G09G3/36H01L29/786H01L27/12H01L27/32
    • H01L29/78696H01L27/12H01L27/1214H01L27/124H01L27/3244H01L29/78645
    • A light emitting display for improving image quality and a Thin Film Transistor (TFT) includes at least one data line for transmitting a data signal, at least one scanning line for transmitting a selected signal, and at least one pixel electrically connected to the data line and the scanning line. The pixel includes a first TFT for responding to the selected signal and transmitting the data signal to an organic light emitting device, a capacitor electrically connected to the first TFT and storing a voltage corresponding to the transmitted data signal, a second TFT connected to the capacitor and supplying an organic light emitting device with a current corresponding to the data signal selected by the selected signal. The widths of respective channel regions of the first TFT are different from each other to reduce the kickoff voltage and improve the driving ability of the TFT, thereby improving the image quality of the light emitting display.
    • 用于提高图像质量的发光显示器和薄膜晶体管(TFT)包括用于发送数据信号的至少一条数据线,用于发送所选择的信号的至少一条扫描线,以及电连接到数据线的至少一个像素 和扫描线。 该像素包括用于响应所选信号并将数据信号发送到有机发光器件的第一TFT,与第一TFT电连接并存储对应于所发送的数据信号的电压的电容器,连接到电容器的第二TFT 以及向有机发光装置提供与由所选信号选择的数据信号相对应的电流。 第一TFT的各个沟道区域的宽度彼此不同,以降低启动电压并提高TFT的驱动能力,从而提高发光显示器的图像质量。
    • 2. 发明申请
    • Light emitting display and fabrication method thereof
    • 发光显示及其制造方法
    • US20050285122A1
    • 2005-12-29
    • US11141198
    • 2005-06-01
    • Woong-Sik Choi
    • Woong-Sik Choi
    • H05B33/00H01L21/00H01L21/77H01L27/12H01L27/32H01L29/18H05B33/26
    • H01L27/1285G09G2320/0233H01L27/1296H01L27/3244H01L27/3262
    • In a light emitting display and a fabrication method thereof, a stripe pattern displayed due to characteristic differences of a driving transistor is prevented, thereby enhancing picture quality. The light emitting display comprises: a plurality of light emitting devices formed adjacent to a region where data and scan lines cross each other; and a plurality of pixel circuits, each including a driving transistor for supplying current corresponding to a data signal to a respective one of the light emitting devices. The positions of the driving transistors are different from each other with respect to at least one of horizontal and vertical directions. With this configuration, a stripe pattern is prevented from appearing perpendicular to a scanning direction of a line beam emitted from an excimer laser during the fabrication method.
    • 在发光显示器及其制造方法中,防止由于驱动晶体管的特性差而显示的条纹图案,从而提高图像质量。 发光显示器包括:与数据和扫描线交叉的区域相邻形成的多个发光器件; 以及多个像素电路,每个像素电路包括用于将相应于数据信号的电流提供给相应的一个发光器件的驱动晶体管。 驱动晶体管的位置相对于水平和垂直方向中的至少一个彼此不同。 利用这种配置,在制造方法期间防止条纹图案垂直于从准分子激光器发射的线束的扫描方向出现。
    • 3. 发明授权
    • Display and manufacturing method of the same
    • 显示和制造方法相同
    • US08629449B2
    • 2014-01-14
    • US13064866
    • 2011-04-21
    • Woong-Sik Choi
    • Woong-Sik Choi
    • H01L29/04G02F1/136H01L51/40
    • H01L27/1288H01L27/1214H01L27/1255H01L27/1274H01L27/3262H01L51/56H01L2227/323
    • A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode.
    • 一种显示器,包括基板,多条信号线,第一栅极电极,第二栅极电极,栅极绝缘层,包括掺杂有p型杂质的第一源极/漏极区域的第一半导体层,第二半导体 层,包括掺杂有n型杂质的第二源极/漏极区域,具有暴露第一源极/漏极区域的一部分的第一接触孔的平坦化层,暴露第二源极/漏极区域的一部分的第二接触孔, 以及第三接触孔,暴露信号线,第一连接电极,第二连接电极,下电极,有机膜层和上电极中的任一个的一部分。
    • 4. 发明申请
    • METHODS OF MANUFACTURING ACTIVE MATRIX SUBSTRATE AND ORGANIC LIGHT EMITTING DISPLAY DEVICE
    • 制造有源矩阵基板和有机发光显示装置的方法
    • US20100255618A1
    • 2010-10-07
    • US12695048
    • 2010-01-27
    • Woong-Sik Choi
    • Woong-Sik Choi
    • H01L51/52H01L21/28
    • H01L27/1288H01L21/76254H01L27/1214H01L27/127H01L29/66772
    • A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.
    • 一种制造有源矩阵基板的方法,其能够在图案化工艺期间由于图案化工艺数量的减少和颗粒的低产生而提高生产率。 该方法包括在衬底上形成图案化电极,并用绝缘膜覆盖第一电极。 然后通过将形成在半导体晶片的表面上的第一层附着到绝缘膜上,并且剥离半导体晶片的一部分,在绝缘膜上形成单晶半导体层。 然后对半导体层进行构图和部分掺杂,通过利用图案化电极作为从衬底的下侧照射的光的光掩模。 这部分地导致用于薄膜晶体管的单晶有源层,其然后被配置为形成有源矩阵基板的像素。
    • 6. 发明申请
    • Display and manufacturing method of the same
    • 显示和制造方法相同
    • US20110291101A1
    • 2011-12-01
    • US13064866
    • 2011-04-21
    • Woong-Sik Choi
    • Woong-Sik Choi
    • H01L33/62
    • H01L27/1288H01L27/1214H01L27/1255H01L27/1274H01L27/3262H01L51/56H01L2227/323
    • A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode.
    • 一种显示器,包括基板,多条信号线,第一栅极电极,第二栅极电极,栅极绝缘层,包括掺杂有p型杂质的第一源极/漏极区域的第一半导体层,第二半导体 层,包括掺杂有n型杂质的第二源极/漏极区域,具有暴露第一源极/漏极区域的一部分的第一接触孔的平坦化层,暴露第二源极/漏极区域的一部分的第二接触孔, 以及第三接触孔,暴露信号线,第一连接电极,第二连接电极,下电极,有机膜层和上电极中的任一个的一部分。
    • 7. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    • 有机发光二极管显示器及其制造方法
    • US20110109532A1
    • 2011-05-12
    • US12914842
    • 2010-10-28
    • Woong-Sik Choi
    • Woong-Sik Choi
    • G09G3/30H01L51/56H01L51/52
    • H01L27/3276G09G3/3208G09G2300/0426H01L27/1259H01L27/3269H01L29/78684H01L51/56H01L2227/323
    • An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.
    • 描述了一种有机发光二极管(OLED)显示器及其制造方法。 一个示例性实施例提供一种OLED显示器,包括:包括多个像素区域的基板; 包括有机发光二极管和多个第一薄膜晶体管的发光单元,所述发光单元形成在所述多个像素区域中的每一个中; 以及包括光传感器和多个第二薄膜晶体管的传感器单元,所述传感器单元形成在所述多个像素区域中的至少一些中。 多个第一薄膜晶体管和多个第二薄膜晶体管中的每一个包括氧化物半导体层,并且光电传感器包括在与氧化物半导体层相同的层上由相同材料制成的氧化物光电转换层。
    • 8. 发明申请
    • Organic light emitting display and method of manufacturing the same
    • 有机发光显示器及其制造方法
    • US20070278480A1
    • 2007-12-06
    • US11651461
    • 2007-01-10
    • Eui-Hoon HwangWoong-Sik Choi
    • Eui-Hoon HwangWoong-Sik Choi
    • H01L29/08
    • H01L27/3244H01L27/1255H01L27/3262H01L27/3265H01L51/56
    • In an organic light emitting display, the process of forming a storage capacitor is simplified, and deterioration of the properties and the reliability of the TFT is prevented. The organic light emitting display includes a substrate, a thin film transistor formed on one portion of the substrate, the thin film transistor having an active layer, a gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, and a storage capacitor formed on another portion of the substrate. The storage capacitor has a first electrode formed on the same surface as the active layer, and a second electrode formed on the same surface as the gate electrode, with the gate insulating layer being interposed between the first electrode and the second electrode. The active layer and the first electrode are made of an intrinsic polysilicon layer.
    • 在有机发光显示器中,简化了形成存储电容器的过程,并且防止了TFT的性能和可靠性的恶化。 有机发光显示器包括:衬底,形成在衬底的一部分上的薄膜晶体管,具有有源层的薄膜晶体管,栅极电极,介于有源层和栅电极之间的栅绝缘层,以及 存储电容器形成在基板的另一部分上。 存储电容器具有形成在与有源层相同的表面上的第一电极和形成在与栅极电极相同的表面上的第二电极,栅极绝缘层插入在第一电极和第二电极之间。 有源层和第一电极由本征多晶硅层制成。