专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110147746A1 TOUCH SCREEN SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL INCLUDING THE TOUCH SCREEN SUBSTRATE 有权
标题翻译：触摸屏幕基板，其制造方法和显示面板，包括触控屏幕基板
公开(公告)号：US20110147746A1
公开(公告)日：2011-06-23
申请号：US12898839
申请日：2010-10-06
申请人： Woong-Kwon KIM , Jung-Suk BANG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Ki-Hun JEONG , Kyung-Sook JEON , Seung-Mi SEO , Kun-Wook HAN , Mi-Seon SEO
发明人： Woong-Kwon KIM , Jung-Suk BANG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Ki-Hun JEONG , Kyung-Sook JEON , Seung-Mi SEO , Kun-Wook HAN , Mi-Seon SEO
IPC分类号： H01L33/16 , H01L33/08
CPC分类号： H01L27/1251 , G06F3/0412 , G06F3/042 , H01L27/1222 , H01L27/1233
摘要： A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.
摘要翻译：触摸屏基板包括基底，第一开关元件和感测红外光的第一感测元件。第一开关元件包括第一开关栅电极，设置在第一开关栅电极上的第一有源图案，设置在第一有源图案上的第一开关源极和与第一开关源电极分开设置的第一开关漏电极。第一感测元件包括连接到第一开关源电极的第一感测漏电极，与第一感测漏电极分开设置的第一感测源电极，设置在第一感测漏电极和第一感测源电极下方的第二有源图案，以及包括第一非晶层，掺杂非晶层和第二非晶层，以及设置在第一感测漏电极和第一感测源电极上的第一感测栅电极。

2. 发明申请

US20110261040A1 INFORMATION DETECTION DISPLAY 有权
标题翻译：信息检测显示
公开(公告)号：US20110261040A1
公开(公告)日：2011-10-27
申请号：US13090991
申请日：2011-04-20
申请人： Sang-Youn HAN , Dong-Kwon KIM , Kyung-Sook JEON , Sung-Hoon YANG , Joo-Han KIM , Woong-Kwon KIM , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Hui-Sung LEE , Ki-Hun JEONG , Seung-Mi SEO , Jung-Suk BANG , Kun-Wook HAN , Mi-Seon SEO
发明人： Sang-Youn HAN , Dong-Kwon KIM , Kyung-Sook JEON , Sung-Hoon YANG , Joo-Han KIM , Woong-Kwon KIM , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Hui-Sung LEE , Ki-Hun JEONG , Seung-Mi SEO , Jung-Suk BANG , Kun-Wook HAN , Mi-Seon SEO
IPC分类号： G09G5/00
CPC分类号： G06F3/0418 , G06F3/042
摘要： An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.
摘要翻译：信息检测装置包括：多个光检测单元，每个光检测单元被配置为检测光; 多个传感器扫描驱动器，每个传感器扫描驱动器被配置为将传感器扫描信号施加到光感测感测信号处理器，被配置为接收由所述光感测单元检测到的位置信息; 多个偏置施加单元，每个偏置施加单元被配置为向所述光感测单元施加偏置电压; 其中每个偏置施加单元施加不同的偏置电压极性。

3. 发明申请

US20110090420A1 SENSOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：传感器阵列基板，包括其的显示装置及其制造方法
公开(公告)号：US20110090420A1
公开(公告)日：2011-04-21
申请号：US12898095
申请日：2010-10-05
申请人： Woong-Kwon KIM , Dae-Cheol KIM , Dong-Kwon KIM , Ki-Hun JEONG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Kyung-Sook JEON , Seung-Mi SEO , Jung-Suk BANG , Mi-Seon SEO
发明人： Woong-Kwon KIM , Dae-Cheol KIM , Dong-Kwon KIM , Ki-Hun JEONG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Kyung-Sook JEON , Seung-Mi SEO , Jung-Suk BANG , Mi-Seon SEO
IPC分类号： G02F1/1333 , H01L31/18 , H01L31/0232
CPC分类号： G06F3/0412 , G02F1/13338 , G06F3/042
摘要： A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.
摘要翻译：提供了传感器阵列基板，包括传感器阵列基板的显示装置和制造传感器阵列基板的方法。所述传感器阵列基板包括基板，形成在所述基板的第一像素区域上并被配置为检测光的第一传感器，形成在所述第一传感器上的外涂层以及形成在所述外涂层上的屏蔽层，其中所述屏蔽层重叠第一个传感器。

4. 发明申请

US20120025189A1 SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：传感器阵列基板及其制造方法
公开(公告)号：US20120025189A1
公开(公告)日：2012-02-02
申请号：US13102824
申请日：2011-05-06
申请人： Kyung-Sook JEON , Jun-Ho SONG , Sang-Youn HAN , Sung-Hoon YANG , Dae-Cheol KIM , Ki-Hun JEONG , Mi-Seon SEO
发明人： Kyung-Sook JEON , Jun-Ho SONG , Sang-Youn HAN , Sung-Hoon YANG , Dae-Cheol KIM , Ki-Hun JEONG , Mi-Seon SEO
IPC分类号： H01L27/146 , H01L31/18 , H01L31/0216
CPC分类号： H01L27/1446 , H01L27/14683
摘要： Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.
摘要翻译：提供传感器阵列基板及其制造方法。传感器阵列基板包括：限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极，其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层，其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案，其中所述第一半导体层和所述第二半导体层设置在不同的层上，并且所述第二栅电极和所述遮光图案是电相互连接。

5. 发明申请

US20120188204A1 TOUCH SENSING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：触摸感应基板及其制造方法
公开(公告)号：US20120188204A1
公开(公告)日：2012-07-26
申请号：US13243737
申请日：2011-09-23
申请人： Yun-Jong YEO , Byeong-Hoon CHO , Ki-Hun JEONG , Hong-Kee CHIN , Jung-Suk BANG , Woong-Kwon KIM , Sung-Ryul KIM , Hee-Joon KIM , Dae-Cheol KIM , Kun-Wook HAN
发明人： Yun-Jong YEO , Byeong-Hoon CHO , Ki-Hun JEONG , Hong-Kee CHIN , Jung-Suk BANG , Woong-Kwon KIM , Sung-Ryul KIM , Hee-Joon KIM , Dae-Cheol KIM , Kun-Wook HAN
IPC分类号： G06F3/042 , H01L21/336
CPC分类号： G06F3/0412 , G06F3/042 , G06F2203/04103
摘要： A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.
摘要翻译：触摸感测基板包括基板，第一光感测元件，第二光感测元件和第一偏置线。第一感光元件包括第一栅电极，与第一栅电极重叠的第一有源图案，与第一有源图案部分重叠的第一源电极和与第一有源图案部分重叠的第一漏电极。第二感光元件包括第二栅电极，与第二栅电极重叠的第二有源图案，与第二有源图案部分重叠的第二源电极和与第二有源图案部分重叠的第二漏电极。第一偏置线连接到第一和第二栅电极。

6. 发明申请

US20120228505A1 OPTICAL SENSOR 有权
标题翻译：光传感器
公开(公告)号：US20120228505A1
公开(公告)日：2012-09-13
申请号：US13194365
申请日：2011-07-29
申请人： Kun-Wook HAN , Sung-Ryul KIM , Woong-Kwon KIM , Dae-Cheol KIM , Ki-Hun JEONG , Jung-Suk BANG , Yun-Jong YEO , Byeong-Hoon CHO , Hong-Kee CHIN , Sung-jin MUN
发明人： Kun-Wook HAN , Sung-Ryul KIM , Woong-Kwon KIM , Dae-Cheol KIM , Ki-Hun JEONG , Jung-Suk BANG , Yun-Jong YEO , Byeong-Hoon CHO , Hong-Kee CHIN , Sung-jin MUN
IPC分类号： H01L27/14
CPC分类号： H01L27/14692 , H01L27/14665
摘要： An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.
摘要翻译：光学传感器包括可见光传感器，其包括可见光感测晶体管，红外光传感器包括红外光检测晶体管，其中可见光感测晶体管通过第一驱动电压线接收第一驱动电压，红外光检测晶体管接收通过第二驱动电压线的第二驱动电压，并且可见光感测晶体管和红外光检测晶体管通过参考电压线接收参考电压。

7. 发明申请

US20110018815A1 TOUCH SCREEN PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：触摸屏面板及其制造方法
公开(公告)号：US20110018815A1
公开(公告)日：2011-01-27
申请号：US12631511
申请日：2009-12-04
申请人： Sang-Youn HAN , Woong-Kwon KIM , Dae-Cheol KIM , Ho-Jun LEE , Kyung-Ho PARK
发明人： Sang-Youn HAN , Woong-Kwon KIM , Dae-Cheol KIM , Ho-Jun LEE , Kyung-Ho PARK
IPC分类号： G06F3/041 , H01L31/042
CPC分类号： G06F3/041 , G06F3/042 , G06F2203/04103
摘要： Provided are a touch screen panel and a method of manufacturing the same. The touch screen panel comprises: a substrate; a first reflection-preventing film formed on the substrate; a first gate wiring formed on the first reflection-preventing film; and a sensing wiring formed above the first gate wiring to be insulated from the first gate wiring and to cross the first gate wiring.
摘要翻译：提供一种触摸屏面板及其制造方法。触摸屏面板包括：基板; 形成在基板上的第一防反射膜; 形成在第一防反射膜上的第一栅极布线; 以及形成在所述第一栅极布线上方以与所述第一栅极布线绝缘并跨越所述第一栅极布线的感测布线。

8. 发明申请

US20090309101A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20090309101A1
公开(公告)日：2009-12-17
申请号：US12435773
申请日：2009-05-05
申请人： Dae-Cheol KIM , Woong-Kwon KIM , Sang-Youn HAN , In-Woo KIM , Ho-Jun LEE , Byeong-Jae AHN
发明人： Dae-Cheol KIM , Woong-Kwon KIM , Sang-Youn HAN , In-Woo KIM , Ho-Jun LEE , Byeong-Jae AHN
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： G02F1/136213 , H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.
摘要翻译：公开了薄膜晶体管阵列基板及其制造方法。薄膜晶体管（TFT）包括形成在基板上的栅极电极和形成在栅电极上并彼此分离的源极和漏极。在基板上形成由与栅电极相同的材料构成的公共线。存储电容器包括与存储电极线连接的存储电极和形成在存储电极上的像素电极。存储电极和像素电极通过图案化透明导电膜而形成，因此可以通过形成存储电容器的区域透射光，从而增加开口率。

9. 发明申请

US20110095300A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20110095300A1
公开(公告)日：2011-04-28
申请号：US12904281
申请日：2010-10-14
申请人： Dae-Cheol KIM , Woong-Kwon KIM , Sang-Youn HAN
发明人： Dae-Cheol KIM , Woong-Kwon KIM , Sang-Youn HAN
IPC分类号： H01L25/075 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/124
摘要： A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.
摘要翻译：一种薄膜晶体管阵列面板的制造方法，包括在栅极线上形成栅极线和栅极绝缘层，在栅极绝缘层上形成半导体，在半导体上形成第一数据线和第一漏极在所述第一数据线和所述第一漏电极上形成下钝化层，在所述下钝化层上形成上钝化层，在所述上钝化层上形成金属层，通过使用感光膜作为掩模蚀刻所述金属层形成反射电极并暴露下钝化层，蚀刻暴露的下钝化层以形成暴露第一漏极的第一接触孔，以及形成通过第一接触孔连接第一漏电极和反射电极的连接辅助构件去除感光膜后。

10. 发明申请

US20120037912A1 VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：可见感应晶体管，显示面板及其制造方法
公开(公告)号：US20120037912A1
公开(公告)日：2012-02-16
申请号：US13208040
申请日：2011-08-11
申请人： Dae-Cheol KIM , Sung-Ryul KIM , Yun-Jong YEO , Hong-Kee CHIN , Ki-Hun JEONG
发明人： Dae-Cheol KIM , Sung-Ryul KIM , Yun-Jong YEO , Hong-Kee CHIN , Ki-Hun JEONG
IPC分类号： H01L27/146 , H01L31/20 , H01L31/113
CPC分类号： G02F1/1368 , G02F1/13338 , G02F2001/13312 , H01L31/1136 , H01L31/12
摘要： A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.
摘要翻译：显示装置包括红外感测晶体管和可见感测晶体管。可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。蚀刻停止层可以由与源电极和漏电极相同的材料构成。除了不存在蚀刻停止层之外，红外感测晶体管类似于可见感测晶体管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式