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    • 1. 发明申请
    • Non-volatile memory device and bad block remapping method
    • 非易失性存储器件和坏块重映射方法
    • US20100046292A1
    • 2010-02-25
    • US12458999
    • 2009-07-29
    • Wook-ghee HahnJai-ick SonYoun-yeol Lee
    • Wook-ghee HahnJai-ick SonYoun-yeol Lee
    • G11C16/06G11C29/00G11C8/00G11C8/10
    • G11C29/76G11C16/0483G11C2029/4402
    • A non-volatile memory device and a bad block remapping method use some of main blocks as remapping blocks to replace a bad block in a main cell block and selects remapping blocks using existing block address signals. Thus, separate bussing of remapping block address signals is not needed. The bad block remapping includes comparing an external block address input from an external source to a stored bad block address, generating a bad block flag signal when the external block address is identical to the stored bad block address, generating a remapping block address selecting the remapping blocks in response to a remapping address corresponding to the bad block address, selecting one of the external block address and the remapping block address in response to the bad block flag signal to create a selected address, and outputting a row address signal in accordance with the selected address.
    • 非易失性存储器件和坏块重映射方法使用一些主块作为重新映射块来替换主单元块中的坏块并且使用现有块地址信号来选择重映射块。 因此,不需要单独的重映射块地址信号的总线。 坏块重映射包括将外部源的外部块地址输入与存储的坏块地址进行比较,当外部块地址与存储的坏块地址相同时产生坏块标志信号,生成选择重映射的重映射块地址 响应于与坏块地址对应的重映射地址,响应于坏块标志信号选择外部块地址和重映射块地址中的一个以创建所选择的地址,并且根据该块地址信号输出行地址信号 选定的地址。
    • 2. 发明授权
    • Non-volatile memory device and bad block remapping method
    • 非易失性存储器件和坏块重映射方法
    • US08050093B2
    • 2011-11-01
    • US12458999
    • 2009-07-29
    • Wook-ghee HahnJai-ick SonYoun-yeol Lee
    • Wook-ghee HahnJai-ick SonYoun-yeol Lee
    • G11C11/34
    • G11C29/76G11C16/0483G11C2029/4402
    • A non-volatile memory device and a bad block remapping method use some of main blocks as remapping blocks to replace a bad block in a main cell block and selects remapping blocks using existing block address signals. Thus, separate bussing of remapping block address signals is not needed. The bad block remapping includes comparing an external block address input from an external source to a stored bad block address, generating a bad block flag signal when the external block address is identical to the stored bad block address, generating a remapping block address selecting the remapping blocks in response to a remapping address corresponding to the bad block address, selecting one of the external block address and the remapping block address in response to the bad block flag signal to create a selected address, and outputting a row address signal in accordance with the selected address.
    • 非易失性存储器件和坏块重映射方法使用一些主块作为重新映射块来替换主单元块中的坏块并且使用现有块地址信号来选择重映射块。 因此,不需要单独的重映射块地址信号的总线。 坏块重映射包括将外部源的外部块地址输入与存储的坏块地址进行比较,当外部块地址与存储的坏块地址相同时产生坏块标志信号,生成选择重映射的重映射块地址 响应于与坏块地址对应的重映射地址,响应于坏块标志信号选择外部块地址和重映射块地址中的一个以创建所选择的地址,并且根据该块地址信号输出行地址信号 选定的地址。