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1. 发明授权

US08071434B2 Method of fabricating a thin film transistor using boron-doped oxide semiconductor thin film 有权
标题翻译：使用硼掺杂氧化物半导体薄膜制造薄膜晶体管的方法
公开(公告)号：US08071434B2
公开(公告)日：2011-12-06
申请号：US12560702
申请日：2009-09-16
申请人： Woo Seok Cheong , Sung Mook Chung , Min Ki Ryu , Chi Sun Hwang , Hye Yong Chu
发明人： Woo Seok Cheong , Sung Mook Chung , Min Ki Ryu , Chi Sun Hwang , Hye Yong Chu
IPC分类号： H01L21/338
CPC分类号： H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631 , H01L29/78606 , H01L29/7869
摘要： Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.
摘要翻译：提供了一种制造薄膜晶体管的方法，该薄膜晶体管包括形成在基板上的源电极和漏电极，新颖的沟道层，栅极绝缘层和栅极电极。该方法包括使用掺杂有硼的氧化物半导体形成沟道层的步骤; 并图形化沟道层。形成的沟道层是掺杂有硼的氧化物半导体薄膜。薄膜晶体管的电特性和高温稳定性显着提高。

2. 发明申请

US20100006837A1 COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR 审中-公开
标题翻译：用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造晶体管的方法
公开(公告)号：US20100006837A1
公开(公告)日：2010-01-14
申请号：US12496558
申请日：2009-07-01
申请人： Doo Hee Cho , Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho , Shin Hyuk Yang , Chun Won Byun , Eun Suk Park , Oh Sang Kwon , Min Ki Ryu , Jae Heon Shin , Woo Seok Cheong , Sung Mook Chung , Jeong Ik Lee
发明人： Doo Hee Cho , Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho , Shin Hyuk Yang , Chun Won Byun , Eun Suk Park , Oh Sang Kwon , Min Ki Ryu , Jae Heon Shin , Woo Seok Cheong , Sung Mook Chung , Jeong Ik Lee
IPC分类号： H01L29/786 , H01L21/336 , H01B1/08
CPC分类号： H01L29/7869 , C23C14/08 , H01L29/247
摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.
摘要翻译：提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。由组合物形成的薄膜是非晶相。具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

3. 发明申请

US20090157372A1 METHOD AND APPARATUS FOR MODELING SOURCE-DRAIN CURRENT OF THIN FILM TRANSISTOR 有权
标题翻译：用于建模薄膜晶体管的源极 - 漏极电流的方法和装置
公开(公告)号：US20090157372A1
公开(公告)日：2009-06-18
申请号：US12201457
申请日：2008-08-29
申请人： Jae Heon SHIN , Chi Sun Hwang , Min Ki Ryu , Woo Seok Cheong , Hye Yong Chu
发明人： Jae Heon SHIN , Chi Sun Hwang , Min Ki Ryu , Woo Seok Cheong , Hye Yong Chu
IPC分类号： G06G7/62
CPC分类号： G06F17/5036
摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.
摘要翻译：提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

4. 发明授权

US08095343B2 Method and apparatus for modeling source-drain current of thin film transistor 有权
标题翻译：薄膜晶体管源漏电流建模方法及设备
公开(公告)号：US08095343B2
公开(公告)日：2012-01-10
申请号：US12201457
申请日：2008-08-29
申请人： Jae Heon Shin , Chi Sun Hwang , Min Ki Ryu , Woo Seok Cheong , Hye Yong Chu
发明人： Jae Heon Shin , Chi Sun Hwang , Min Ki Ryu , Woo Seok Cheong , Hye Yong Chu
IPC分类号： G06F17/11
CPC分类号： G06F17/5036
摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.
摘要翻译：提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

5. 发明申请

US20100258437A1 APPARATUS FOR REACTIVE SPUTTERING DEPOSITION 审中-公开
标题翻译：反应溅射沉积装置
公开(公告)号：US20100258437A1
公开(公告)日：2010-10-14
申请号：US12741667
申请日：2008-09-02
申请人： Woo Seok Cheong , Chi Sun Hwang , Min Ki Ryu
发明人： Woo Seok Cheong , Chi Sun Hwang , Min Ki Ryu
IPC分类号： C23C14/34
CPC分类号： C23C14/0047 , C23C14/3464
摘要： Provided is a reactive sputtering apparatus, and more particularly, a reactive sputtering apparatus capable of effectively ionizing a reactive gas using inductively coupled plasma (ICP). The reactive sputtering apparatus includes: a chamber having an inlet port for introducing a plasma gas thereinto and an outlet port for exhausting the gas used during reactive sputtering to the exterior; an ICP generator disposed on the chamber, ionizing a reactive gas, and injecting the ionized gas into the chamber; and at least one sputter gun located at a side surface of the chamber and supporting a target. Therefore, the reactive sputtering apparatus can improve an ionization rate of a reactive gas using inductively coupled plasma to reduce a process temperature and improve uniformity and step coverage of thin film deposition at low cost.
摘要翻译：提供了一种反应性溅射装置，更具体地，涉及一种使用电感耦合等离子体（ICP）能够有效地电离反应性气体的反应溅射装置。反应性溅射装置包括：具有用于将等离子体气体引入其中的入口的室和用于将反应性溅射期间使用的气体排出到外部的出口; 设置在所述室上的ICP发生器，使反应气体电离，并将所述电离气体注入所述室中; 以及位于所述室的侧表面处并支撑靶的至少一个溅射枪。因此，反应溅射装置可以使用电感耦合等离子体来提高反应气体的离子化速度，以降低处理温度，并以低成本提高薄膜沉积的均匀性和步骤覆盖。

6. 发明申请

US20100019239A1 METHOD OF FABRICATING ZTO THIN FILM, THIN FILM TRANSISTOR EMPLOYING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR 审中-公开
标题翻译：制造ZTO薄膜的方法，使用该薄膜的薄膜晶体管以及制造薄膜晶体管的方法
公开(公告)号：US20100019239A1
公开(公告)日：2010-01-28
申请号：US12359149
申请日：2009-01-23
申请人： Woo Seok Cheong , Sung Min Yoon , Jae Heon Shin , Chi Sun Hwang
发明人： Woo Seok Cheong , Sung Min Yoon , Jae Heon Shin , Chi Sun Hwang
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631
摘要： Provided are a method of fabricating a zinc-tin-oxide (ZTO) thin film, a thin film transistor employing the same, and a method of fabricating a thin film transistor. The method of fabricating a ZTO thin film includes depositing zinc oxide and tin oxide at a deposition temperature of 450° C. or lower so that a zinc-to-tin atomic ratio is 4:1 or greater, to form an amorphous ZTO thin film. In the thin film transistor, the ZTO thin film is used as a channel layer.
摘要翻译：提供了制造锌 - 锡氧化物（ZTO）薄膜的方法，采用该方法的薄膜晶体管以及制造薄膜晶体管的方法。制造ZTO薄膜的方法包括在450℃或更低的沉积温度下沉积氧化锌和氧化锡，使得锌 - 锡原子比为4:1或更大，以形成无定形ZTO薄膜。在薄膜晶体管中，ZTO薄膜用作沟道层。

7. 发明授权

US07989286B2 Electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof 有权
标题翻译：使用具有垂直结构的碳纳米管的电子器件及其制造方法
公开(公告)号：US07989286B2
公开(公告)日：2011-08-02
申请号：US12517803
申请日：2007-11-27
申请人： Woo Seok Cheong , Jin Ho Lee
发明人： Woo Seok Cheong , Jin Ho Lee
IPC分类号： H01L21/8242
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/78 , H01L51/0048 , H01L51/057
摘要： Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an electronic device having a vertical CNT includes the steps of: (a) preparing a substrate on which a silicon source is formed; (b) forming a first insulating layer on the substrate, and etching the first insulating layer such that a top surface of the silicon source is exposed; (c) forming a second insulating layer on the silicon source, and forming a gate by patterning the second insulating layer; (d) forming a third insulating layer on the gate, and forming a through hole in which a carbon nanotube channel is to be formed by etching the third insulating layer and the second insulating layer; (e) forming a fourth insulating layer surrounding the gate on the through hole and the third insulating layer, and forming a spacer by etching the fourth insulating layer; (f) forming a metal catalyst on the silicon source; (g) vertically growing the carbon nanotube channel on the silicon source using the metal catalyst; (h) forming a fifth insulating layer on the through hole in which the carbon nanotube is formed and the third insulating layer; and (i) patterning the fifth insulating layer such that the carbon nanotube channel is exposed, and forming a silicon drain. An arrangement problem of horizontal CNTs can be solved by applying vertical CNTs and a selective silicon growth technique.
摘要翻译：提供了应用立式碳纳米管（CNT）的电子装置及其制造方法。制造具有垂直CNT的电子器件的方法包括以下步骤：（a）制备其上形成有硅源的衬底; （b）在所述基板上形成第一绝缘层，并且蚀刻所述第一绝缘层以使所述硅源的顶表面露出; （c）在所述硅源上形成第二绝缘层，并且通过图案化所述第二绝缘层形成栅极; （d）在栅极上形成第三绝缘层，形成通过蚀刻第三绝缘层和第二绝缘层形成碳纳米管通道的通孔; （e）在所述通孔和所述第三绝缘层上形成围绕所述栅极的第四绝缘层，并且通过蚀刻所述第四绝缘层形成间隔物; （f）在硅源上形成金属催化剂; （g）使用金属催化剂使硅源上的碳纳米管通道垂直生长; （h）在其上形成有碳纳米管的通孔和第三绝缘层上形成第五绝缘层; 和（i）对第五绝缘层进行构图，使得碳纳米管通道露出，并形成硅漏极。水平CNT的布置问题可以通过应用垂直CNT和选择性硅生长技术来解决。

8. 发明授权

US06399488B2 Method of manufacturing a contact plug in a semiconductor device 有权
标题翻译：在半导体器件中制造接触插塞的方法
公开(公告)号：US06399488B2
公开(公告)日：2002-06-04
申请号：US09879555
申请日：2001-06-12
申请人： Dong Suk Shin , Woo Seok Cheong , Bong Soo Kim
发明人： Dong Suk Shin , Woo Seok Cheong , Bong Soo Kim
IPC分类号： H01L2144
CPC分类号： H01L21/28525 , H01L21/28562
摘要： A method of manufacturing a contact plug in a semiconductor device is disclosed. In-situ thermal doping of an impurity such as phosphorous (P) during the process by which polysilicon for a contact plug is formed by selective growth method and after in-situ doping after the growth process is employed in order to increase the concentration of the impurity in the contact plug. As a result, the disclosed method can reduce the interfacial resistance at the plug to improve the electrical characteristics of a device of more than 1 G bits.
摘要翻译：公开了一种在半导体器件中制造接触插塞的方法。在用于接触塞的多晶硅通过选择性生长方法和在生长过程之后的原位掺杂之后的过程中，诸如磷（P）的杂质的原位热掺杂以增加其浓度接触塞中的杂质。结果，所公开的方法可以降低插头处的界面电阻以改善超过1G位的器件的电气特性。

9. 发明授权

US08563356B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08563356B2
公开(公告)日：2013-10-22
申请号：US12887282
申请日：2010-09-21
申请人： Woo Seok Cheong , Sung Mook Chung , Jun Yong Bak
发明人： Woo Seok Cheong , Sung Mook Chung , Jun Yong Bak
IPC分类号： H01L21/00
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.
摘要翻译：提供了一种薄膜晶体管及其制造方法，其中与含有硼或铝的氮化物结合的氧化物半导体被施加到沟道层。其中与含有硼或铝的氮化物结合的氧化物半导体施加到沟道层的薄膜晶体管显示出显着改善的迁移率和在高温下增加的稳定性。

10. 发明授权

US07757247B2 Small form factor optical/magnetic disk for information storage 失效
标题翻译：用于信息存储的小型光学/磁盘
公开(公告)号：US07757247B2
公开(公告)日：2010-07-13
申请号：US11288693
申请日：2005-11-29
申请人： Woo Seok Cheong , Yong Goo Yoo , Sung Q Lee , Ho Jun Ryu , Mun Cheol Paek , Eun Kyoung Kim , Kang Ho Park
发明人： Woo Seok Cheong , Yong Goo Yoo , Sung Q Lee , Ho Jun Ryu , Mun Cheol Paek , Eun Kyoung Kim , Kang Ho Park
IPC分类号： G11B7/24 , G11B23/03 , G11B3/70 , G11B5/84 , G11B7/26 , G11B5/82
CPC分类号： G11B23/0035
摘要： Provided is a small form factor optical/magnetic disk including an integrated metal hub and a disk plate. The integrated metal hub includes a circular upper metal hub and a circular lower metal hub integrally formed with and disposed under the upper metal hub. The circular lower metal hub has a smaller diameter smaller than the upper metal hub. A central hole is formed in central portions of the upper and lower metal hubs and passes through the upper and lower metal hubs. The disk plate has a through-hole that is formed in a central portion and is directly associated with the integrated metal hub, and a recess that is formed around the through-hole and allows the upper metal hub to be mounted therein. Since the central portion of the small form factor optical/magnetic disk is not thick, the small form factor optical/magnetic disk can contribute to an ultra thin small form factor information storage device. Also, since manufacturing processes are simple, price and quality competitiveness can be enhanced.
摘要翻译：提供了包括集成金属毂和盘片的小型光学/磁盘。集成金属毂包括圆形上金属毂和与上金属毂一体形成并设置在其下的圆形下金属毂。圆形下部金属毂具有比上部金属毂更小的直径。中心孔形成在上下金属轮毂的中心部分，并通过上下金属轮毂。盘片具有形成在中心部分并且与集成金属毂直接相关联的通孔，以及形成在通孔周围并允许上金属毂安装在其中的凹部。由于小型光学/磁盘的中心部分不厚，因此小型光学/磁盘可以有助于超薄型小尺寸信息存储装置。此外，由于制造工艺简单，因此可以提高价格和质量竞争力。

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