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1. 发明申请

US20080179746A1 WIRING STRUCTURES OF SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：半导体器件的布线结构及其形成方法
公开(公告)号：US20080179746A1
公开(公告)日：2008-07-31
申请号：US12017538
申请日：2008-01-22
申请人： Won-Goo Hur , Dong-Kyun Park , Je-Hyeon Park , Young-Joo Cho , Kyu-Tae Na
发明人： Won-Goo Hur , Dong-Kyun Park , Je-Hyeon Park , Young-Joo Cho , Kyu-Tae Na
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/28562 , H01L21/76877 , H01L27/10885 , H01L27/10888 , H01L27/11521
摘要： A wiring structure of a semiconductor device comprises an insulating interlayer, a plug and a conductive pattern. The insulating interlayer has an opening therethrough on a substrate. The plug includes tungsten and fills up the opening. The plug is formed by a deposition process using a reaction of a source gas. A conductive pattern structure makes contact with the plug and includes a first tungsten layer pattern and a second tungsten layer pattern. The first tungsten layer pattern is formed by the deposition process. The second tungsten layer pattern is formed by a physical vapor deposition (PVD) process.
摘要翻译：半导体器件的布线结构包括绝缘中间层，插头和导电图案。绝缘中间层在基板上具有穿过其的开口。插头包括钨并填满开口。插塞通过使用源气体的反应的沉积工艺形成。导电图案结构与插头接触并且包括第一钨层图案和第二钨层图案。第一钨层图案通过沉积工艺形成。第二钨层图案通过物理气相沉积（PVD）工艺形成。

2. 发明授权

US07524724B2 Method of forming titanium nitride layer and method of fabricating capacitor using the same 有权
标题翻译：形成氮化钛层的方法和使用其制造电容器的方法
公开(公告)号：US07524724B2
公开(公告)日：2009-04-28
申请号：US11173771
申请日：2005-06-30
申请人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
发明人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
IPC分类号： H01L21/20
CPC分类号： C23C16/45529 , C23C16/34 , H01L27/10817 , H01L27/10852 , H01L28/75 , H01L28/91
摘要： A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition technique performed at a first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas at a predetermined flow ratio and depositing a second titanium nitride layer on the first titanium nitride layer using a chemical vapor deposition process performed at a second temperature that is greater than the first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas.
摘要翻译：一种制造存储电容器的方法包括使用化学气相沉积技术或在第一温度下用氯化钛（TiCl 4）气体和氨（NH 3））的反应气体进行的原子层沉积技术在电介质层上沉积第一氮化钛层，气体以预定的流量比并且在第二氮化钛层上沉积第二氮化钛层，所述化学气相沉积工艺是在第二温度下用氯化钛（TiCl 4）气体和氨的反应气体 NH3）气体。

3. 发明申请

US20080185624A1 STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件存储电容器
公开(公告)号：US20080185624A1
公开(公告)日：2008-08-07
申请号：US12100042
申请日：2008-04-09
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L29/94
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模制氧化物层，选择性地去除部分模制氧化物层以在接触塞上方形成凹陷，在凹陷的底表面和侧表面上形成钛层，在钛层上形成氮化钛层，并在氮化钛层上形成氮氧化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

4. 发明申请

US20060115946A1 Method of forming a lower electrode of a capacitor 有权
公开(公告)号：US20060115946A1
公开(公告)日：2006-06-01
申请号：US11282193
申请日：2005-11-18
申请人： Jung-Wook Kim , Young-Joo Cho
发明人： Jung-Wook Kim , Young-Joo Cho
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852
摘要： In an embodiment, a method of forming a lower electrode of a capacitor in a semiconductor memory device includes etching a mold oxide layer to have at a cylindrical structure, resulting in an electrode with increased surface area. The cylindrical structure may have more than one radius. This increased surface area results in an increased capacitance. An excessive etch phenomenon, which occurs because a sacrificial oxide layer is etched at a higher rate than the mold oxide layer, is avoided.

5. 发明申请

US20060099760A1 Storage capacitors for semiconductor devices and methods of forming the same 有权
标题翻译：用于半导体器件的存储电容器及其形成方法
公开(公告)号：US20060099760A1
公开(公告)日：2006-05-11
申请号：US11266520
申请日：2005-11-03
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

6. 发明申请

US20060014385A1 Method of forming titanium nitride layer and method of fabricating capacitor using the same 有权
标题翻译：形成氮化钛层的方法和使用其制造电容器的方法
公开(公告)号：US20060014385A1
公开(公告)日：2006-01-19
申请号：US11173771
申请日：2005-06-30
申请人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
发明人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： C23C16/45529 , C23C16/34 , H01L27/10817 , H01L27/10852 , H01L28/75 , H01L28/91
摘要： A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition technique performed at a first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas at a predetermined flow ratio and depositing a second titanium nitride layer on the first titanium nitride layer using a chemical vapor deposition process performed at a second temperature that is greater than the first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas.
摘要翻译：一种制造存储电容器的方法包括使用化学气相沉积技术或在第一温度下用氯化钛（TiCl 4）的反应气体进行的原子层沉积技术在电介质层上沉积第一氮化钛层 >）气体和氨（NH 3）气体，并且在第一氮化钛层上沉积第二氮化钛层，使用在大于第一温度与氯化钛（TiCl 4 N 3）气体和氨（NH 3）3气体的反应气体反应。

7. 发明授权

US06762126B2 Method of forming an interlayer dielectric film 有权
标题翻译：形成层间绝缘膜的方法
公开(公告)号：US06762126B2
公开(公告)日：2004-07-13
申请号：US10082019
申请日：2002-02-20
申请人： Young-Joo Cho , Eun-Kee Hong , Ju-Bum Lee
发明人： Young-Joo Cho , Eun-Kee Hong , Ju-Bum Lee
IPC分类号： H01L21311
CPC分类号： H01L21/02222 , H01L21/02164 , H01L21/02318 , H01L21/02337 , H01L21/3125
摘要： In a method for forming an interlayer dielectric film, an insulating film is deposited on a semiconductor substrate that has a metal wiring pattern. The insulating film is polished by CMP until exposing an upper portion of the wiring pattern. A spin on glass composition, which includes polysilazane, is coated over the polished insulating material and exposed portions of the wiring pattern to form a film. The film is then pre-baked in a temperature range of 50 to 350° C., and then hard-baked in a temperature range of 300 to 500° C. After the hard-baking, the film is then heat-treated in an oxidation atmosphere. With the hard-baking, gasses of the coating of film may be removed so that the amount of gas generated during a subsequent anneal or heat-treating process may be reduced. Accordingly, particle contaminants may be reduced by such process in addition to providing a means for reduced risk of crack formation.
摘要翻译：在形成层间电介质膜的方法中，在具有金属布线图案的半导体基板上沉积绝缘膜。通过CMP抛光绝缘膜，直到暴露布线图案的上部。包括聚硅氮烷在内的旋涂玻璃组合物涂覆在抛光的绝缘材料上并且布线图案的暴露部分形成膜。然后将膜在50〜350℃的温度范围内进行预烘烤，然后在300〜500℃的温度范围内进行硬烘烤。在硬烘烤后，将膜进行热处理氧化气氛。通过硬烘烤，可以除去膜涂层的气体，从而可以减少在随后的退火或热处理过程中产生的气体的量。因此，除了提供降低裂纹风险的方法之外，还可以通过这种方法减少颗粒污染物。

8. 发明授权

US07719045B2 Capacitor for a semiconductor device and method of forming the same 有权
标题翻译：用于半导体器件的电容器及其形成方法
公开(公告)号：US07719045B2
公开(公告)日：2010-05-18
申请号：US12251352
申请日：2008-10-14
申请人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
发明人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
IPC分类号： H01L27/108
CPC分类号： H01L28/90 , H01L27/0207 , H01L27/10852 , H01L28/75
摘要： In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
摘要翻译：在具有高介电常数的电容器中，电容器包括圆柱形下电极，电介质层和上电极。在作为电介质层的下电极的内表面，顶面和外表面上形成金属氧化物层。第一子电极沿着下电极的轮廓在电介质层的表面上形成，并且第二子电极连续形成在与下电极的顶表面对应的第一子电极上，因此开口部分的下部电极被第二子电极覆盖。第一和第二子电极分别包括施加第一和第二应力的第一和第二金属氮化物层。第一和第二个应力的方向彼此相反。因此，在具有高介电常数的上电极中破裂最小化，从而减少电流泄漏。

9. 发明授权

US07629262B2 Method of forming a lower electrode of a capacitor 有权
标题翻译：形成电容器的下电极的方法
公开(公告)号：US07629262B2
公开(公告)日：2009-12-08
申请号：US11282193
申请日：2005-11-18
申请人： Jung-Wook Kim , Young-Joo Cho
发明人： Jung-Wook Kim , Young-Joo Cho
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L28/91 , H01L27/10852
摘要： In an embodiment, a method of forming a lower electrode of a capacitor in a semiconductor memory device includes etching a mold oxide layer to have at a cylindrical structure, resulting in an electrode with increased surface area. The cylindrical structure may have more than one radius. This increased surface area results in an increased capacitance. An excessive etch phenomenon, which occurs because a sacrificial oxide layer is etched at a higher rate than the mold oxide layer, is avoided.
摘要翻译：在一个实施例中，在半导体存储器件中形成电容器的下电极的方法包括将模具氧化物层蚀刻成具有圆柱形结构，导致具有增加的表面积的电极。圆柱形结构可以具有多于一个的半径。这种增加的表面积导致增加的电容。避免了由于牺牲氧化物层以比模具氧化物层更高的速率蚀刻而发生的过度蚀刻现象。

10. 发明申请

US20060113580A1 Capacitor for a semiconductor device and method of forming the same 失效
标题翻译：用于半导体器件的电容器及其形成方法
公开(公告)号：US20060113580A1
公开(公告)日：2006-06-01
申请号：US11286316
申请日：2005-11-23
申请人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
发明人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
IPC分类号： H01L21/00
CPC分类号： H01L28/90 , H01L27/0207 , H01L27/10852 , H01L28/75
摘要： In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
摘要翻译：在具有高介电常数的电容器中，电容器包括圆柱形下电极，电介质层和上电极。在作为电介质层的下电极的内表面，顶面和外表面上形成金属氧化物层。第一子电极沿着下电极的轮廓在电介质层的表面上形成，并且第二子电极连续形成在与下电极的顶表面对应的第一子电极上，因此开口部分的下部电极被第二子电极覆盖。第一和第二子电极分别包括施加第一和第二应力的第一和第二金属氮化物层。第一和第二个应力的方向彼此相反。因此，在具有高介电常数的上电极中破裂最小化，从而减少电流泄漏。

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