会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Integrated circuit air bridge structures and methods of fabricating same
    • 集成电路空气桥结构及其制造方法
    • US06211056B1
    • 2001-04-03
    • US09199292
    • 1998-11-24
    • Patrick A. BegleyWilliam R. YoungAnthony L. RivoliJose Avelino DelgadoStephen J. Gaul
    • Patrick A. BegleyWilliam R. YoungAnthony L. RivoliJose Avelino DelgadoStephen J. Gaul
    • H01L214763
    • H01L28/10H01L21/7682H01L23/5221H01L2924/0002H01L2924/00
    • Conductive elements which provide interconnections (air bridges between circuits) and components such as capacitors and inductors may be incorporated in the devices in a manner to reduce parasitic effects in the operation of the devices while providing close spacing which enhances the performance of the devices at high frequency. Separate substrates are provided respectively having the integrated circuits formed therein and covering, preferably sealing the integrated circuits. The air bridge conductive components (interconnections, capacitors or inductors) are formed separately in the covering substrate which is assembled with the substrate having the integrated circuit as a lid which seals and packages the circuits and the conductive element or component contained in the lid. The conductive component may be separated by cavities formed in the lid substrate or in the substrate having the integrated circuit device already formed therein. Assembly may take place at temperatures lower than necessary for fusion bonding and diffusion commonly used in the fabrication of integrated circuits. Bonds which are used may be metal, oxide or plastic (polymer) bonding material.
    • 提供互连(电路之间的空气桥)和诸如电容器和电感器的部件的导电元件可以以减少器件操作中的寄生效应的方式并入器件中,同时提供紧密的间隔,这增强了器件在高处的性能 频率。 分别提供分离的基板,其中形成有集成电路并覆盖,优选地密封集成电路。 空气桥导电部件(互连,电容器或电感器)分别形成在与具有集成电路的基板组装的覆盖基板上,该基板具有密封并封装电路和包含在盖中的导电元件或部件的盖。 导电部件可以由形成在盖基板中的空腔或已经形成有集成电路器件的基板分离。 组装可能发生在集成电路制造中常用的熔接和扩散所需的温度以下。 使用的债​​券可以是金属,氧化物或塑料(聚合物)结合材料。
    • 6. 发明授权
    • Integrated circuit air bridge structures and methods of fabricating same
    • 集成电路空气桥结构及其制造方法
    • US06492705B1
    • 2002-12-10
    • US08658010
    • 1996-06-04
    • Patrick A. BegleyWilliam R. YoungAnthony L. RivoliJose Avelino DelgadoStephen J. Gaul
    • Patrick A. BegleyWilliam R. YoungAnthony L. RivoliJose Avelino DelgadoStephen J. Gaul
    • H01L2900
    • H01L28/10H01L21/7682H01L23/5221H01L2924/0002H01L2924/00
    • Airbridge structures and processes for making air bridge structures and integrated circuits are disclosed. One airbridge structure has metal conductors 24 encased in a sheath of dielectric material 249. The conductors extend across a cavity 244 and a semiconductor substrate 238. In one embodiment, the conductors traversing the cavity 244 are supported by posts 248 that extend from the substrate. In another embodiment, oxide posts 258 extend from the substrate to support the conductors. In another embodiment, trenches 101 are made in a device substrate 110 bonded to a handle substrate 100. The trenches are filled with a dielectric and a conductor pattern is formed over the filled trenches. The substrate material between the conductors is then removed to leave a pattern of posts 116, 114, 112 that included dielectrically encased conductors 106. In another bonded wafer embodiment, conductors 204 are encased in a dielectric above a sacrificial device region. The device region is isolated by suitably filled trenches. Vias 224, 226 in the dielectric 205 allow removal of the substrate material to form a cavity 208 beneath the conductors 204. Other embodiments included a conductor 42 encased in dielectric that is formed above a region from which sacrificial polysilicon is removed to form a cavity 66. It is still another embodiment the conductor 42 is enclosed in a dielectric above a cavity 66a from which device material is removed.
    • 公开了用于制造空气桥结构和集成电路的空中桥梁结构和工艺。 一个空中桥结构具有包裹在电介质材料249的护套中的金属导体24.导体延伸穿过空腔244和半导体衬底238.在一个实施例中,穿过空腔244的导体由从衬底延伸的柱248支撑。 在另一个实施例中,氧化物柱258从衬底延伸以支撑导体。在另一个实施例中,沟槽101被制成接合到手柄衬底100的器件衬底110.沟槽填充有电介质,并且导体图案形成在 填充的沟槽。 然后去除导体之间的衬底材料以留下包括介电封装的导体106的柱116,114,112的图案。在另一个接合晶片实施例中,导体204被封装在牺牲器件区域之上的电介质中。 器件区域由适当填充的沟槽隔离。 电介质205中的通孔224,226允许去除衬底材料以在导体204下方形成空腔208.其它实施例包括封装在电介质中的导体42,导电体42形成在除去牺牲多晶硅以形成空腔66的区域之上 还有另一个实施例,导体42封闭在空腔66a之上的电介质中,器件材料从该空腔中被去除。