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    • 7. 发明授权
    • Interference photocathode
    • 干涉光电阴极
    • US5311098A
    • 1994-05-10
    • US888083
    • 1992-05-26
    • John F. SeelyWilliam R. Hunter
    • John F. SeelyWilliam R. Hunter
    • H01J1/34H01J43/08
    • H01J1/34
    • An interference photocathode includes a reflective substrate and interference layers disposed on said reflective substrate for selectively enhancing a first photoelectric yield of said photocathode when irradiated by radiation having a first wavelength relative to a second photoelectric yield of said photocathode when irradiated by radiation having a second wavelength. In one embodiment, the interference layers include a dielectric layer having a wavelength dependent effective thickness disposed on said reflective substrate such that said effective thickness for radiation having said first wavelength is an odd multiple of a quarter of said first wavelength and said effective thickness for radiation having said second wavelength is an even multiple of a quarter of said second wavelength. In another embodiment, the dielectric layer includes a layer of electrically conductive material and a dielectric material disposed between said layer of electrically conductive material and said reflective substrate.
    • 干涉光电阴极包括反射基板和设置在所述反射基板上的干涉层,用于当用具有第二波长的辐射照射时相对于所述光电阴极的第二光电产量照射具有第一波长的辐射来选择性地增强所述光电阴极的第一光电收益 。 在一个实施例中,干涉层包括具有设置在所述反射基板上的波长相关有效厚度的电介质层,使得具有所述第一波长的辐射的所述有效厚度是所述第一波长的四分之一的奇数倍和所述辐射的有效厚度 具有所述第二波长的是所述第二波长的四分之一的偶数倍。 在另一个实施例中,电介质层包括导电材料层和设置在所述导电材料层和所述反射衬底之间的电介质材料。
    • 10. 发明授权
    • Method of fabricating narrow deep grooves in silicon
    • 在硅中制造窄深槽的方法
    • US4331708A
    • 1982-05-25
    • US203842
    • 1980-11-04
    • William R. Hunter
    • William R. Hunter
    • H01L21/308H01L21/762H01L21/76
    • H01L21/76202H01L21/308H01L21/76232Y10S148/051Y10S148/085Y10S148/111
    • A method of fabricating deep grooves having submicron widths in a semiconductor substrate. A pattern of submicron oxidation masking elements formed on the substrate surface serves as an oxidation mask for a thick oxide layer. After forming the oxide layer, the insulating elements are removed to form a pattern of submicron width openings in the oxide extending to the substrate. A selective anisotropic dry etch is then used to form deep, narrow grooves in the substrate conforming to the pattern of openings which are filled with an insulating material formed by thermal oxidation, chemical vapor deposition, or a combination thereof. This process is used to provide deep dielectric isolation between active areas in high density integrated circuits.
    • 一种在半导体衬底中制造具有亚微米宽度的深槽的方法。 形成在基板表面上的亚微米氧化掩模元件的图案用作厚氧化物层的氧化掩模。 在形成氧化物层之后,去除绝缘元件以在延伸到衬底的氧化物中形成亚微米宽度开口的图案。 然后使用选择性各向异性干蚀刻在衬底中形成符合开口图案的深的窄槽,其填充有通过热氧化,化学气相沉积或其组合形成的绝缘材料。 该过程用于在高密度集成电路中的有源区之间提供深电介质隔离。