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    • 10. 发明授权
    • Method for fabricating a nano-imprinting mold
    • 用于压印光刻及其制造的装置
    • US07368395B2
    • 2008-05-06
    • US11601084
    • 2006-11-16
    • M. Saif IslamGun Young JungYong ChenR. Stanley Williams
    • M. Saif IslamGun Young JungYong ChenR. Stanley Williams
    • H01L21/461
    • H01L21/76838H01L21/0337
    • An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.
    • 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有(110)水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是(111)垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构,其中垂直结构可以是纳米级隔开的。 该方法包括在(111)垂直晶格面的半导体衬底的(110)水平表面的暴露部分中湿式蚀刻具有间隔开(111)垂直侧壁的沟槽。 使用蚀刻比(110)水平晶格面慢的(111)垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。