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1. 发明授权

US5563344A Dual element electron tunneling accelerometer 失效
标题翻译：双元素电子隧道加速度计
公开(公告)号：US5563344A
公开(公告)日：1996-10-08
申请号：US493432
申请日：1995-06-22
申请人： William J. Kaiser , Thomas W. Kenny , Howard K. Rockstad , Joseph K. Reynolds , Thomas R. Van Zandt
发明人： William J. Kaiser , Thomas W. Kenny , Howard K. Rockstad , Joseph K. Reynolds , Thomas R. Van Zandt
IPC分类号： G01P15/08 , G01P15/13
CPC分类号： G01P15/131 , G01P15/0894
摘要： The use of a dual element approach provides high resolution position sensors based on electron tunneling. This approach allows miniaturization while utilizing the position sensitivity of electron tunneling to give high resolution. The dual-element tunneling structure overcomes the narrow bandwidth limitations of a single-element structure. A sensor with an operating range of 5 Hz to 10 kHz, which can have applications as an acoustic sensor, is disclosed. Noise is analyzed for fundamental thermal vibration of the suspended masses and is compared to electronic noise. It is shown that miniature tunnel accelerometers can achieve resolution such that thermal noise in the suspended masses is the dominant cause of the resolution limit. With a proof mass of order 100 mg, noise analysis predicts limiting resolutions approaching 10.sup.-9 g/.sqroot.Hz in a 300 Hz band and 10.sup.-8 g/.sqroot.Hz at 1 kHz.
摘要翻译：使用双元件方法提供了基于电子隧穿的高分辨率位置传感器。这种方法允许小型化，同时利用电子隧道的位置灵敏度来提供高分辨率。双元件隧道结构克服了单元件结构的窄带宽限制。公开了具有5Hz至10kHz的操作范围的传感器，其可以用作声学传感器。分析噪声对悬浮质量的基本热振动，并与电子噪声进行比较。显示微型隧道加速度计可以实现分辨率，使得悬浮质量中的热噪声是分辨率极限的主要原因。使用100毫克级的检测质量，噪声分析预测在300 Hz频带内接近10-9 g / 2ROOT + E，rad Hz + EE的限制分辨率和1 kHz时的10-8 g / 2ROOT + E，rad Hz + EE 。

2. 发明授权

US5298748A Uncooled tunneling infrared sensor 失效
标题翻译：未冷却隧道红外传感器
公开(公告)号：US5298748A
公开(公告)日：1994-03-29
申请号：US898682
申请日：1992-06-15
申请人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Howard K. Rockstad , Joseph K. Reynolds
发明人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Howard K. Rockstad , Joseph K. Reynolds
IPC分类号： G01J1/42 , G01J5/00 , G01J5/42 , G01Q10/00 , G01Q30/10 , G01Q60/16 , G01Q70/14 , G01Q70/18 , H01J37/00
CPC分类号： G01J5/42 , B82Y15/00 , G01J2005/425
摘要： An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane which would otherwise change deflection depending upon incident infrared radiation. The resulting infrared sensor will meet or exceed the performance of all other broadband, uncooled, infrared sensors and can be miniaturized to pixel dimensions smaller than 100 .mu.m. The technology is readily implemented as a small-format linear array suitable for commercial and spacecraft applications.
摘要翻译：非制冷红外隧道传感器，其中唯一的移动部分是偏转成与通过新颖的光刻工艺制备的微机加工的硅尖端电极接触的膜片。类似地制备的偏转电极采用静电力来控制氮化硅，平膜片的偏转。振膜表现出高谐振频率，可降低传感器对振动的敏感度。高带宽反馈电路通过调节偏转电压来控制隧道电流，以保持膜的恒定偏转，否则将根据入射的红外辐射而改变偏转。所产生的红外传感器将达到或超过所有其他宽带，非制冷红外传感器的性能，并且可以小于小于100（我）m的像素尺寸。该技术很容易实现为适用于商业和航天器应用的小格式线性阵列。

3. 发明授权

US3983076A N-type amorphous semiconductor materials 失效
标题翻译： N型非晶半导体材料
公开(公告)号：US3983076A
公开(公告)日：1976-09-28
申请号：US375794
申请日：1973-07-02
申请人： Howard K. Rockstad , Richard A. Flasck
发明人： Howard K. Rockstad , Richard A. Flasck
IPC分类号： H01L29/40 , H01L21/36 , H01L29/00 , H01L29/26 , H01L45/00 , H01B1/06 , C03C3/12 , C03C3/30
CPC分类号： H01L29/263 , H01L29/00
摘要： New amorphous semiconductor and chalcogenide compositions are provided exhibiting n-conductivity characteristics. Chalcogenide compositions, which are normally formed as p-type materials, are converted to n-type materials or are initially formed as n-type materials, by elevating the temperatures thereof below their crystallization temperature and substantially in excess of the temperature at which its conductivity at room temperature versus annealing temperature curve decreases sharply from a relatively high constant value and allowing the same to cool to room temperature.
摘要翻译：提供新的非晶半导体和硫族化合物组合物，表现出n导电特性。通常形成为p型材料的硫族化合物组合物转化为n型材料，或者最初形成为n型材料，通过将其温度升高到其结晶温度以下并基本上超过其导电性的温度在室温下与退火温度曲线相对较高的恒定值急剧下降并使其冷却至室温。

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