会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Low temperature method for synthesizing micrograin tungsten carbide
    • 用于合成微晶碳化钨的低温方法
    • US5372797A
    • 1994-12-13
    • US50945
    • 1993-04-21
    • Stephen D. DunmeadWilliam G. Moore
    • Stephen D. DunmeadWilliam G. Moore
    • C01B32/949C01B31/34
    • B82Y30/00C01B31/34C01P2004/62C01P2004/64C01P2006/12C01P2006/80
    • A method for forming monotungsten carbide, comprising heating a solid, non-elemental tungsten-containing material in a flowing atmosphere containing molecular hydrogen and molecular methane for a time sufficient to convert substantially all of the tungsten-containing material to monotungsten carbide, The heating brings the temperature of the tungsten-containing material to a first elevated temperature of from about 520 to about 550.degree. C. and, subsequently, at a rate of from about 3 to about 10.degree. C. per minute, the heating brings the temperature from the first elevated temperature to a second elevated temperature of about 800 to about 900.degree. C. Thereafter the temperature is held at the second elevated temperature for at least about 15 minutes. At least about 50 weight percent of the monotungsten carbide formed is formed while holding the temperature at the second elevated temperature.
    • 一种用于形成单碳化钨的方法,包括在含有分子氢和分子甲烷的流动气氛中加热固体的非元素含钨材料足以将基本上所有含钨材料转化为单碳化钨的时间。加热带来 将含钨材料的温度升至约520℃至约550℃的第一升高温度,随后以约3至约10℃/分钟的速率进行,加热使温度从 第一升高温度至约800℃至约900℃的第二升高温度。此后将温度保持在第二升高温度下至少约15分钟。 在将温度保持在第二升高温度的同时形成至少约50重量%的形成的单
      碳化钨。