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1. 发明授权

US4291244A Electrets 失效
标题翻译：驻极体
公开(公告)号：US4291244A
公开(公告)日：1981-09-22
申请号：US72302
申请日：1979-09-04
申请人： William F. Beach , Dennis M. Mahoney
发明人： William F. Beach , Dennis M. Mahoney
IPC分类号： H01G7/02 , G11C13/02 , H01H1/02
CPC分类号： H01G7/023 , Y10S428/90 , Y10S428/913 , Y10S428/929 , Y10S428/934 , Y10S428/938 , Y10S55/39 , Y10T428/31504 , Y10T428/31678 , Y10T428/31692 , Y10T428/31855
摘要： A process for preparing polymer electrets comprising the following steps:(a) providing two electrodes in a deposition zone, said electrodes being in a spaced relationship to one another, having opposing surfaces, and being connected to an external voltage source capable of impressing an intense electric field between the opposing surfaces;(b) providing a dipolar substituted p-xylylene monomer vapor in sufficient amount to coat the opposing surfaces of the electrodes;(c) activating the power source; and(d) introducing the vapor from step (b) into the deposition zone, said zone being under vacuum and at a temperature at which the vapor will condense,whereby the vapor condenses on the opposing surfaces of the electrodes, the monomer polymerizing to parylene, coating said surfaces, and forming electrets.
摘要翻译：一种制备聚合物驻极体的方法，包括以下步骤：（a）在沉积区域中提供两个电极，所述电极彼此间隔开，具有相对的表面，并且连接到能够强烈施加压力的外部电压源相对表面之间的电场; （b）提供足够量的偶极取代的对二甲苯单体蒸气以涂覆电极的相对表面; （c）启动电源; 和（d）将来自步骤（b）的蒸汽引入沉积区，所述区域处于真空状态，并且在蒸气冷凝的温度下，蒸气在电极的相对表面上冷凝，单体聚合成聚对二甲苯，涂覆所述表面，并形成驻极体。

2. 发明授权

US5536321A Parylene deposition apparatus including a post-pyrolysis filtering chamber and a deposition chamber inlet filter 失效
标题翻译： Parylene沉积设备包括后热解过滤室和沉积室入口过滤器
公开(公告)号：US5536321A
公开(公告)日：1996-07-16
申请号：US549131
申请日：1995-10-27
申请人： Roger A. Olsen , John Wary , William F. Beach
发明人： Roger A. Olsen , John Wary , William F. Beach
IPC分类号： B05D7/24 , C08G61/02 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/46 , C23C16/52 , C23C16/00
CPC分类号： C23C16/463 , B05D1/60 , C08G61/025 , C23C16/4402 , C23C16/4412 , C23C16/4485 , C23C16/452 , C23C16/46 , C23C16/52 , C08G2261/3424
摘要： Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a post-pyrolysis chamber maintained at a predetermined temperature for capturing unpyrolyzed dimer before entry into the deposition chamber, and a filter structure positioned at the deposition chamber inlet to filter out microscopic particles and impurities prior to deposition onto the wafer surface. The post-pyrolysis chamber includes baffles for capturing the unpyrolyzed dimer, and the filter material preferably comprises PTFE. The filter element is heated to prevent deposition onto the filter.
摘要翻译：提供化学气相沉积装置，用于在生产半导体芯片时快速有效地将Parylene AF4沉积到硅晶片上。该装置包括保持在预定温度下用于在进入沉积室之前捕获未掺混二聚体的后热解室，以及位于沉积室入口处的过滤结构，以在沉积到晶片表面之前过滤出微观颗粒和杂质。后热解室包括用于捕获未掺混二聚体的挡板，并且过滤材料优选包含PTFE。过滤元件被加热以防止沉积在过滤器上。

3. 发明授权

US5536317A Parylene deposition apparatus including a quartz crystal thickness/rate controller 失效
标题翻译： Parylene沉积设备包括石英晶体厚度/速率控制器
公开(公告)号：US5536317A
公开(公告)日：1996-07-16
申请号：US549133
申请日：1995-10-27
申请人： Kermit Crain , John Wary , Roger A. Olson , William F. Beach
发明人： Kermit Crain , John Wary , Roger A. Olson , William F. Beach
IPC分类号： C08G61/02 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/46 , C23C16/52 , C23C16/00
CPC分类号： C23C16/463 , C08G61/025 , C23C16/4412 , C23C16/4485 , C23C16/452 , C23C16/46 , C23C16/52 , C08G2261/3424
摘要： A parylene deposition apparatus includes a quartz crystal thickness/rate controller for controlling the deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The crystal is located within the deposition chamber to receive a coating of parylene consistent with that of the substrate being coated. The vaporization chamber of the apparatus includes a heat transfer receptacle for receiving parylene dimer to be vaporized. The heat transfer receptacle includes heating and cooling devices to control the temperature thereof. In operation, parylene monomer deposits onto the surface of the crystal during deposition thereby varying the vibration frequency of the crystal. The rate of change in frequency can be directly correlated with the rate of monomer deposition. The crystal is associated with a microcontroller and set-point comparator, and further with the heating and cooling elements of the vaporization chamber to effectively monitor the thickness of the parylene coating during deposition, and control the rate of vaporization of the dimer.
摘要翻译：聚对二甲苯沉积装置包括石英晶体厚度/速率控制器，用于在生产半导体芯片时控制聚对二甲苯AF4沉积在硅晶片上。晶体位于沉积室内以接收与被涂覆的基底的涂层一致的聚对二甲苯涂层。该装置的蒸发室包括用于接收要蒸发的聚对二甲苯二聚物的传热容器。传热容器包括用于控制其温度的加热和冷却装置。在操作中，聚对二甲苯单体在沉积期间沉积到晶体的表面上，从而改变晶体的振动频率。频率变化率可以与单体沉积速率直接相关。该晶体与微控制器和设定点比较器相关联，并且还与蒸发室的加热和冷却元件相关联以在沉积期间有效地监测聚对二甲苯涂层的厚度，并且控制二聚体的汽化速率。

4. 发明授权

US5534068A Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement 失效
标题翻译： Parylene沉积设备包括锥形沉积室和双真空出口泵送装置
公开(公告)号：US5534068A
公开(公告)日：1996-07-09
申请号：US549169
申请日：1995-10-27
申请人： William F. Beach , John Wary , Roger A. Olson
发明人： William F. Beach , John Wary , Roger A. Olson
IPC分类号： C08G61/02 , C23C16/44 , C23C16/448 , C23C16/46 , C23C16/52 , C23C16/54 , C23C16/00
CPC分类号： C23C16/463 , C08G61/025 , C23C16/4412 , C23C16/4485 , C23C16/46 , C23C16/52 , C23C16/54 , C08G2261/3424
摘要： A parylene deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a frusto-conical shaped deposition chamber which minimizes deposition chamber volume and maximizes flow of vapor over the surface of the wafer, and a vacuum by-pass assembly wherein a high-conductance vacuum outlet is utilized to quickly reduce pressure in the vacuum chamber system and a low-conductance vacuum manifold outlet is utilized to maintain vacuum flow during the deposition procedure.
摘要翻译：提供聚对二甲苯沉积装置用于在生产半导体芯片中快速有效地将Parylene AF4沉积到硅晶片上。该装置包括截头圆锥形沉积室，其最小化沉积室体积并使晶片表面上的蒸汽流动最大化，以及真空旁路组件，其中使用高电导真空出口来快速降低真空中的压力腔室系统和低电导真空歧管出口用于在沉积过程中保持真空流动。

5. 发明授权

US5806319A Method and apparatus for cryogenically cooling a deposition chamber 失效
标题翻译：用于低温冷却沉积室的方法和装置
公开(公告)号：US5806319A
公开(公告)日：1998-09-15
申请号：US816295
申请日：1997-03-13
申请人： John Wary , Roger A. Olson , William F. Beach , Walter Swanson
发明人： John Wary , Roger A. Olson , William F. Beach , Walter Swanson
IPC分类号： B05D7/24 , C23C14/54 , B01D8/00
CPC分类号： B05D1/60 , C23C14/541 , Y10S417/901
摘要： A method and apparatus for depositing parylene monomer within the interior of a deposition chamber of a parylene deposition system. In certain embodiments, the method comprises the steps of: (a) introducing a cryogenic fluid into the interior of the deposition chamber to cool the surface of the substrate; and (b) introducing the parylene monomer into the interior of the chamber to deposit the parylene monomer onto the surface of the substrate. In some embodiments, the apparatus comprises: a deposition chamber; a pumping system, a source of cryogenic fluid, a gas source and at least one support mount disposed within the interior of the deposition chamber. The pumping system reduces the pressure of the interior of the deposition chamber, and the pumping system is in fluid communication with the interior of the deposition chamber. The source of cryogenic fluid is in fluid communication with the interior of the deposition chamber. The gas source is in fluid communication with the interior of the deposition chamber. Optionally, the method or apparatus may include the use of a load lock chamber.
摘要翻译：一种在聚对二甲苯沉积系统的沉积室的内部沉积聚对二甲苯单体的方法和设备。在某些实施方案中，该方法包括以下步骤：（a）将低温流体引入沉积室的内部以冷却基底的表面; 和（b）将聚对二甲苯单体引入室的内部以将聚对二甲苯单体沉积在基材的表面上。在一些实施例中，该装置包括：沉积室; 泵送系统，低温流体源，气体源和设置在沉积室内部的至少一个支撑安装座。泵送系统降低沉积室内部的压力，并且泵送系统与沉积室的内部流体连通。低温流体的源与沉积室的内部流体连通。气源与沉积室的内部流体连通。可选地，该方法或装置可以包括使用负载锁定室。

6. 发明授权

US5538758A Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers 失效
标题翻译：将聚对二甲苯AF4沉积到半导体晶片上的方法和装置
公开(公告)号：US5538758A
公开(公告)日：1996-07-23
申请号：US549087
申请日：1995-10-27
申请人： William F. Beach , Roger A. Olson , John Wary
发明人： William F. Beach , Roger A. Olson , John Wary
IPC分类号： B05D7/24 , C08G61/02 , C23C16/44 , C23C16/448 , C23C16/46 , C23C16/52 , C23C16/00
CPC分类号： C23C16/463 , B05D1/60 , C08G61/025 , C23C16/4412 , C23C16/4485 , C23C16/46 , C23C16/52 , C08G2261/3424
摘要： Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. A method of depositing parylene AF4 onto the surface of a semiconductor wafer includes cooling the semiconductor chip wafer to a temperature below 0.degree. C., creating an inert atmosphere around the apparatus, creating sub-atmospheric pressure conditions around the wafer while maintaining the inert external atmosphere, and depositing a predetermined thickness of the parylene AF4 polymer onto the wafer. The method further includes the steps of heating the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions, and may still further include the steps of further heating the wafer to a predetermined annealing temperature, and the cooling the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions.
摘要翻译：提供化学气相沉积装置，用于在生产半导体芯片时快速有效地将Parylene AF4沉积到硅晶片上。将聚对二甲苯AF4沉积在半导体晶片的表面上的方法包括将半导体芯片晶片冷却至低于0℃的温度，在设备周围产生惰性气氛，在晶片周围产生次大气压力条件，同时保持惰性外部气氛，并将预定厚度的聚对二甲苯AF4聚合物沉积在晶片上。该方法还包括以下步骤：在从亚大气压条件移除晶片之前将晶片加热回到室温，并且还可以进一步包括将晶片进一步加热至预定退火温度的步骤，并将晶片冷却回在从低于大气压的条件移除晶片之前，将温度升至室温。

7. 发明授权

US5536319A Parylene deposition apparatus including an atmospheric shroud and inert gas source 失效
标题翻译：聚对二甲苯沉积设备包括大气护罩和惰性气体源
公开(公告)号：US5536319A
公开(公告)日：1996-07-16
申请号：US549093
申请日：1995-10-27
申请人： John Wary , Roger A. Olson , William F. Beach
发明人： John Wary , Roger A. Olson , William F. Beach
IPC分类号： C08G61/02 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/46 , C23C16/52 , C23C16/00
CPC分类号： C23C16/463 , C08G61/025 , C23C16/4401 , C23C16/4412 , C23C16/4485 , C23C16/452 , C23C16/46 , C23C16/52 , C08G2261/3424
摘要： Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes an atmospheric shroud which envelopes the entire apparatus, and further includes an inert gas source for providing an inert atmosphere within the shroud. The purpose of the shroud and inert atmosphere is to exclude oxygen from the deposition chamber during vacuum evacuation and the subsequent coating cycle, thus allowing the coating process to be carried out in a substantially oxygen free environment.
摘要翻译：提供化学气相沉积装置，用于在生产半导体芯片时快速有效地将Parylene AF4沉积到硅晶片上。该装置包括包围整个装置的大气护罩，还包括用于在护罩内提供惰性气氛的惰性气体源。护罩和惰性气体的目的是在真空抽空和随后的涂覆循环期间从沉积室排除氧气，从而允许涂覆过程在基本上无氧的环境中进行。

8. 发明授权

US6051276A Internally heated pyrolysis zone 失效
标题翻译：内部加热热解区
公开(公告)号：US6051276A
公开(公告)日：2000-04-18
申请号：US818537
申请日：1997-03-14
申请人： John Wary , William F. Beach , Roger A. Olson
发明人： John Wary , William F. Beach , Roger A. Olson
IPC分类号： C23C16/44 , C23C16/448 , C23C16/452 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4557 , C23C16/4488 , C23C16/452
摘要： A method and apparatus for more efficiently depositing a gas onto a surface. In one embodiment, a deposition apparatus is provided. The deposition apparatus comprises a deposition chamber, a tube and a heating element. The tube is in fluid communication with the deposition chamber, and the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube. In another embodiment, a method of depositing a product gas onto a surface is provided. The method comprises placing a first gas into a tube; heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent the centerline of the tube, the second portion of the first gas being adjacent the inner surface of the tube, the first temperature being greater than the second temperature; and depositing the product gas onto the surface.
摘要翻译：一种用于更有效地将气体沉积到表面上的方法和装置。在一个实施例中，提供了沉积设备。沉积设备包括沉积室，管和加热元件。管与沉积室流体连通，并且加热元件被构造和布置成使得加热元件优先地相对于管的内表面加热管的中心线。在另一个实施例中，提供了将产物气体沉积到表面上的方法。该方法包括将第一气体放入管中; 将第一气体的第一和第二部分分别加热到第一和第二温度以形成产物气体，第一气体的第一部分邻近管的中心线，第一气体的第二部分邻近内表面所述第一温度大于所述第二温度; 并将产物气体沉积到表面上。

9. 发明授权

US5709753A Parylene deposition apparatus including a heated and cooled dimer crucible 失效
标题翻译： Parylene沉积设备包括加热和冷却的二聚物坩埚
公开(公告)号：US5709753A
公开(公告)日：1998-01-20
申请号：US549395
申请日：1995-10-27
申请人： Roger A. Olson , William F. Beach , John Wary
发明人： Roger A. Olson , William F. Beach , John Wary
IPC分类号： B05D7/24 , C08G61/02 , C23C16/44 , C23C16/448 , C23C16/46 , C23C16/52 , C23C16/00
CPC分类号： C23C16/463 , B05D1/60 , C08G61/025 , C23C16/4412 , C23C16/4485 , C23C16/46 , C23C16/52 , C08G2261/3424
摘要： Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a heated and cooled dimer receptacle for fast and efficient vaporization of parylene dimer material.
摘要翻译：提供化学气相沉积装置，用于在生产半导体芯片时快速有效地将Parylene AF4沉积到硅晶片上。该装置包括加热且冷却的二聚体容器，用于快速且有效地蒸发聚对二甲苯二聚物材料。

10. 发明授权

US5139813A Method for inducing fluorescence in parylene films by an active plasma 失效
标题翻译：用活性血浆诱导聚对二甲苯膜荧光的方法
公开(公告)号：US5139813A
公开(公告)日：1992-08-18
申请号：US590366
申请日：1990-09-28
申请人： Joseph H. Yira , William F. Beach
发明人： Joseph H. Yira , William F. Beach
IPC分类号： C08F2/52 , B05D3/14 , B05D7/24 , B41M3/14 , B42D15/10 , C08F2/00 , C08G61/00 , C08G61/02 , C09D5/00 , C09D5/22 , C09D165/00 , C09D165/04 , C23C14/12 , G01N21/62 , G01N21/84 , H05H1/00 , H05H1/46 , H05K1/02 , H05K3/28
CPC分类号： B05D1/62 , B05D3/145 , G01N21/62 , H05K1/0266 , H05K3/284
摘要： A method is provided for inducing fluorescence in films or coatings comprised in whole or in part of parylene which involves exposure of the parylene to an active plasma. A method is also provided which utilizes plasma induced fluorescence as a means for quality control inspection of films and coatings of parylene such as those contained on electronic components or for identification and/or authentication of various articles.
摘要翻译：提供了一种用于在包含聚对二甲苯的全部或部分中的膜或涂层中诱导荧光的方法，其涉及将聚对二甲苯暴露于活性等离子体。还提供了一种方法，其利用等离子体诱导荧光作为对包括在电子部件上的聚对二甲苯的膜和涂层进行质量控制检查的手段，或用于各种物品的识别和/或认证。

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