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1. 发明申请

US20120295514A1 BUMBLEBEE NEST BOX 有权
公开(公告)号：US20120295514A1
公开(公告)日：2012-11-22
申请号：US13574341
申请日：2011-01-24
申请人： Willem Steven Paul Keppens , Tim Bollens , Felix Leopold Wackers , Hidetoshi Yokoi , Masahiro Yoneda , Takayuki Aoki
发明人： Willem Steven Paul Keppens , Tim Bollens , Felix Leopold Wackers , Hidetoshi Yokoi , Masahiro Yoneda , Takayuki Aoki
IPC分类号： A01K47/06
CPC分类号： A01K47/06
摘要： This invention relates to a nest box (1) for bumblebees that provides sufficient ventilation inside the nest box (1). The provided nest box (1) with a bumblebees hive (2) inside resolves the problems of insufficient ventilation, by being mounted with a ventilation panel (14), comprising ventilation holes (13) in size(s) that enable ventilation but at the same time bumblebees from passing through.
摘要翻译：本发明涉及一种用于在巢箱（1）内提供充分通气的用于大黄蜂的巢箱（1）。所提供的具有大黄蜂蜂巢（2）的巢箱（1）通过安装有通风面板（14）来安装通风的问题，解决了通风不足的问题，该通风面板包括通风孔（13），其具有能够通风的通风孔，同一时间的大黄蜂通过。

2. 发明授权

US09320264B2 Bumblebee nest box 有权
标题翻译：大黄蜂巢箱
公开(公告)号：US09320264B2
公开(公告)日：2016-04-26
申请号：US13574341
申请日：2011-01-24
申请人： Willem Steven Paul Keppens , Tim Bollens , Felix Leopold Wackers , Hidetoshi Yokoi , Masahiro Yoneda , Takayuki Aoki
发明人： Willem Steven Paul Keppens , Tim Bollens , Felix Leopold Wackers , Hidetoshi Yokoi , Masahiro Yoneda , Takayuki Aoki
IPC分类号： A01K47/06
CPC分类号： A01K47/06
摘要： A nest box (1) for bumblebees that provides sufficient ventilation inside the nest box (1). The provided nest box (1) with a bumblebees hive (2) inside resolves the problems of insufficient ventilation, by being mounted with a ventilation panel (14), comprising ventilation holes (13) in size(s) that enable ventilation but at the same time bumblebees from passing through.
摘要翻译：用于在巢箱（1）内提供足够通风的大黄蜂的巢箱（1）。所提供的具有大黄蜂蜂巢（2）的巢箱（1）通过安装有通风面板（14）来安装通风的问题，解决了通风不足的问题，该通风面板包括通风孔（13），其具有能够通风的通风孔，同一时间的大黄蜂通过。

3. 发明授权

US5219781A Method for manufacturing semiconductor memory device having a stacked type capacitor 失效
标题翻译：具有层叠型电容器的半导体存储器件的制造方法
公开(公告)号：US5219781A
公开(公告)日：1993-06-15
申请号：US959572
申请日：1992-10-13
申请人： Masahiro Yoneda
发明人： Masahiro Yoneda
IPC分类号： H01L27/108
CPC分类号： H01L27/10817
摘要： A capacitor of a semiconductor memory device includes a planar type capacitor portion formed on a surface of an impurity region and a stacked type capacitor portion extending above the gate electrode. The stacked capacitor portion has a three-layer structure of polycrystalline silicon in which upper, lower and side surfaces of a lower electrode are surrounded by a dielectric layer and the upper electrode. A portion of a dielectric layer in the stacked capacitor portion is coupled to another dielectric layer formed on the surface of one impurity region. The capacitor has a planar type capacitor provided in the planar area of occupation of the stacked capacitor portion, whereby the capacitance of the capacitor can be increased without increasing the planar area of occupation.
摘要翻译：半导体存储器件的电容器包括形成在杂质区域的表面上的平面型电容器部分和在栅电极上方延伸的层叠型电容器部分。叠层电容器部分具有多层硅的三层结构，其中下电极的上，下和侧表面被电介质层和上电极包围。层叠电容器部分中的介电层的一部分耦合到形成在一个杂质区域的表面上的另一电介质层。电容器具有设置在层叠电容器部分的占用的平面区域中的平面型电容器，由此可以增加电容器的电容，而不增加占用的平面面积。

4. 发明授权

US4984199A Semiconductor memory cells having common contact hole 失效
标题翻译：具有公共接触孔的半导体存储单元
公开(公告)号：US4984199A
公开(公告)日：1991-01-08
申请号：US358495
申请日：1989-05-30
申请人： Masahiro Yoneda , Masahiro Hatanaka , Yoshio Kohno , Shinichi Satoh , Hidekazu Oda , Koichi Moriizumi
发明人： Masahiro Yoneda , Masahiro Hatanaka , Yoshio Kohno , Shinichi Satoh , Hidekazu Oda , Koichi Moriizumi
IPC分类号： G11C11/401 , G11C5/02 , G11C11/24 , G11C11/404 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： G11C5/02 , G11C11/24 , G11C11/404 , H01L27/10805 , H01L27/10829
摘要： A dynamic type semiconductor device comprises a memory cell array including a plurality of cell groups, each of the cell groups including four adjacent memory cells disposed in a point symmetry fashion, with a single contact hole formed at the center of the point symmetry to be common to the four memory cells, in which the four memory cells and bit lines are connected through the single contact hole.
摘要翻译：动态类型半导体器件包括包括多个单元组的存储单元阵列，每个单元组包括以点对称方式设置的四个相邻的存储单元，其中形成在点对称中心的单个接触孔为共同的其中四个存储单元和位线通过单个接触孔连接到四个存储单元。

5. 发明授权

US5536926A Optical scanner and optical scanning device, optical sensor, coded data reader, and POS system which employ the optical scanner 失效
标题翻译：光学扫描仪和光学扫描装置，光学传感器，编码数据读取器和采用光学扫描仪的POS系统
公开(公告)号：US5536926A
公开(公告)日：1996-07-16
申请号：US361381
申请日：1994-12-22
申请人： Masaaki Ikeda , Hiroshi Goto , Kenji Takemura , Hidenobu Umeda , Masahiro Yoneda , Atsushi Irie , Kiyotoshi Ookura , Norimasa Yamanaka , Hiromi Totani
发明人： Masaaki Ikeda , Hiroshi Goto , Kenji Takemura , Hidenobu Umeda , Masahiro Yoneda , Atsushi Irie , Kiyotoshi Ookura , Norimasa Yamanaka , Hiromi Totani
IPC分类号： G02B26/10 , G06K7/10
CPC分类号： G06K7/10653 , G06K2207/1016
摘要： An optical scanner and an optical scanning device, an optical sensor unit, a coded data reader, and a POS system employing an optical scanner. The optical comprises an elastically deformable element, a vibrational input segment disposed at a first end of the elastically deformable element, a driven segment disposed at a second end of the elastically deformable element, a vibration source for inducing vibration in the vibrational input segment, whereby the vibration induced in the vibrational input segment produces elastic deformation of the elastically deformable element and consequent movement of the driven segment, and a stop for limiting a range of the movement of the driven segment.
摘要翻译：光学扫描器和光学扫描装置，光学传感器单元，编码数据读取器和采用光学扫描仪的POS系统。所述光学元件包括可弹性变形的元件，设置在所述可弹性变形元件的第一端的振动输入段，设置在所述可弹性变形元件的第二端的从动段，用于在所述振动输入段中引起振动的振动源，由此在振动输入段中引起的振动产生可弹性变形的元件的弹性变形，从而导致从动段的移动，以及用于限制从动段的运动范围的停止。

6. 发明授权

US5292401A Method of forming a fine pattern 失效
标题翻译：形成精细图案的方法
公开(公告)号：US5292401A
公开(公告)日：1994-03-08
申请号：US44009
申请日：1993-04-08
申请人： Masahiro Yoneda
发明人： Masahiro Yoneda
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/3255 , H01J37/32568 , H01J2237/022 , H01J2237/20
摘要： A fine pattern forming apparatus includes a stage and an opposed electrode at least one of which is made of a magnetic material. A magnetic field is applied to this stage or opposed electrode to provide a predetermined gap between the stage and the opposed electrode for a fine pattern formation. In consequence, optimum etching conditions (including etching uniformity, etch rate and etching direction) can be assured without generating dust. As a result, damage caused by the plasma can be reduced, and the etch rate can be increased.
摘要翻译：精细图案形成装置包括平台和至少一个由磁性材料制成的相对电极。向该级或相对电极施加磁场，以在阶段和相对电极之间提供预定的间隙以进行精细图案形成。因此，可以确保最佳的蚀刻条件（包括蚀刻均匀性，蚀刻速率和蚀刻方向）而不产生灰尘。结果，可以降低由等离子体引起的损伤，并且可以提高蚀刻速率。

7. 发明授权

US5158861A Method of forming minute patterns using chemically amplifying type resist 失效
标题翻译：使用化学放大型抗蚀剂形成微小图案的方法
公开(公告)号：US5158861A
公开(公告)日：1992-10-27
申请号：US501568
申请日：1990-03-30
申请人： Akira Tokui , Masahiro Yoneda
发明人： Akira Tokui , Masahiro Yoneda
IPC分类号： G03F7/26 , G03F7/38 , H01L21/027
CPC分类号： G03F7/38
摘要： A method of forming a minute pattern with controlled resist profile uses a chemically amplifying type resist and deep UV rays. Microposit SAL601-ER7 is applied on a silicon substrate, to form a resist film of the resist on the silicon substrate. The resist film is selectively irradiated with KrF excimer laser beam by using a photomask. Thereafter, an electric field directed vertically downward is applied to the resist film while the resist film is heated. According to this method, H.sup.+ ions which are a catalyst for cross linking generated in the resist film move vertically downward, so that diffusion of the H.sup.+ ions in the lateral direction during heating can be prevented. Consequently, negative minute patterns having sidewalls formed vertical to the substrate can be provided.
摘要翻译：用受控抗蚀剂轮廓形成微小图案的方法使用化学放大型抗蚀剂和深紫外线。将微孔SAL601-ER7施加在硅衬底上，以在硅衬底上形成抗蚀剂的抗蚀剂膜。通过使用光掩模，用KrF准分子激光束选择性地照射抗蚀剂膜。此后，在抗蚀剂膜被加热的同时，向抗蚀剂膜施加垂直向下的电场。根据该方法，作为在抗蚀剂膜中产生的交联催化剂的H +离子垂直向下移动，从而可以防止在加热期间H +离子在横向上的扩散。因此，可以提供具有垂直于衬底的侧壁的负微小图案。

8. 发明授权

US5079617A Multiple layer electrode structure for semiconductor device and method of manufacturing thereof 失效
标题翻译：用于半导体器件的多层电极结构及其制造方法
公开(公告)号：US5079617A
公开(公告)日：1992-01-07
申请号：US405283
申请日：1989-09-11
申请人： Masahiro Yoneda
发明人： Masahiro Yoneda
IPC分类号： H01L21/3205 , H01L21/285 , H01L21/336 , H01L21/60 , H01L23/485 , H01L23/52 , H01L29/423 , H01L29/45 , H01L29/78
CPC分类号： H01L21/76897 , H01L21/28525 , H01L23/485 , H01L29/4232 , H01L29/456 , H01L29/66606 , H01L2924/0002
摘要： A MOS FET comprises a gate electrode and source and drain regions. Conductive layers for electrode are formed on surfaces of the source and drain regions. The conductive layers for electrode are formed by a multilayer structure including a high melting point metal silicide film in contact with the source and drain regions and a polycrystalline silicon layer formed thereon. The gate electrode is formed of polysilicon. The gate electrode has a structure in which part of the gate electrode extends over the conductive layers for electrode formed on the source and drain regions. Such structure reduces the resistance of the interconnection layers for electrodes and realizes reduction in width of the gate electrode. In the manufacturing method, the patterning of the conductive layers for electrodes on the surface of the source/drain regions comprises the steps of etching the polycrystalline silicon layer by dry etching, and etching the high melting point metal silicide layer by wet etching. The wet etching enables etching process without damaging the silicon substrate surface.
摘要翻译： MOS FET包括栅极电极和源极和漏极区域。用于电极的导电层形成在源区和漏区的表面上。用于电极的导电层由包括与源极和漏极区域接触的高熔点金属硅化物膜和形成在其上的多晶硅层的多层结构形成。栅电极由多晶硅形成。栅极电极具有其中部分栅电极在形成于源区和漏区上的电极导电层延伸的结构。这种结构降低了用于电极的互连层的电阻，并实现了栅电极的宽度的减小。在制造方法中，在源极/漏极区域的表面上的电极用导电层的图案化包括通过干蚀刻蚀刻多晶硅层，并通过湿法蚀刻蚀刻高熔点金属硅化物层的步骤。湿式蚀刻可以蚀刻工艺而不会损坏硅衬底表面。

9. 发明授权

US5258266A Method of forming minute patterns using positive chemically amplifying type resist 失效
标题翻译：使用正化学放大型抗蚀剂形成微小图案的方法
公开(公告)号：US5258266A
公开(公告)日：1993-11-02
申请号：US925146
申请日：1992-08-06
申请人： Akira Tokui , Masahiro Yoneda
发明人： Akira Tokui , Masahiro Yoneda
IPC分类号： G03F7/38 , G03F7/32
CPC分类号： G03F7/38 , Y10S430/146
摘要： A method of forming a minute pattern with controlled resist profile by using chemically amplifying type resist and deep UV ray is disclosed. A positive chemically amplifying type resist is applied on a silicon substrate, to form a resist film of the resist on the silicon substrate. The resist film is selectively irradiated with KrF excimer laser beam by using a photomask. Thereafter, an electric field directed vertically downward is applied to the resist film while the resist film is heated. According to this method, H.sup.+ ions which are catalyst for destroying the dissolution inhibiting capability of the dissolution inhibitor generated in the resist film move vertically downward, so that diffusion of the H.sup.+ ions in the lateral direction during heating can be prevented. Consequently, a positive minute pattern having sidewall formed vertical to the substrate can be provided.
摘要翻译：公开了通过使用化学放大型抗蚀剂和深紫外线形成具有受控抗蚀剂轮廓的微小图案的方法。在硅衬底上施加正性化学放大型抗蚀剂，以在硅衬底上形成抗蚀剂的抗蚀剂膜。通过使用光掩模，用KrF准分子激光束选择性地照射抗蚀剂膜。此后，在抗蚀剂膜被加热的同时，向抗蚀剂膜施加垂直向下的电场。根据该方法，用于破坏在抗蚀剂膜中产生的溶解抑制能力的催化剂的H +离子垂直向下移动，从而可以防止在加热期间H +离子在横向上的扩散。因此，可以提供具有垂直于衬底的侧壁的正微小图案。

10. 发明授权

US5177574A Semiconductor memory device having a stacked type capacitor and manufacturing method therefor 失效
标题翻译：具有堆叠式电容器的半导体存储器件及其制造方法
公开(公告)号：US5177574A
公开(公告)日：1993-01-05
申请号：US446744
申请日：1989-12-06
申请人： Masahiro Yoneda
发明人： Masahiro Yoneda
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10817
摘要： A capacitor of a semiconductor memory device includes a planar type capacitor portion formed on a surface of an impurity region and a stacked type capacitor portion extending above the gate electrode. The stacked capacitor portion has a three-layer structure of polycrystalline silicon in which upper, lower and side surfaces of a lower electrode are surrounded by a dielectric layer and the upper electrode. A portion of a dielectric layer in the stacked capacitor portion is coupled to another dielectric layer formed on the surface of one impurity region. The capacitor has a planar type capacitor provided in the planar area of occupation of the stacked capacitor portion, whereby the capacitance of the capacitor can be increased without increasing the planar area of occupation.
摘要翻译：半导体存储器件的电容器包括形成在杂质区域的表面上的平面型电容器部分和在栅电极上方延伸的层叠型电容器部分。叠层电容器部分具有多层硅的三层结构，其中下电极的上，下和侧表面被电介质层和上电极包围。层叠电容器部分中的介电层的一部分耦合到形成在一个杂质区域的表面上的另一电介质层。电容器具有设置在层叠电容器部分的占用的平面区域中的平面型电容器，由此可以增加电容器的电容，而不增加占用的平面面积。

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