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1. 发明授权

US08460983B1 Method for modifying and controlling the threshold voltage of thin film transistors 有权
标题翻译：修改和控制薄膜晶体管阈值电压的方法
公开(公告)号：US08460983B1
公开(公告)日：2013-06-11
申请号：US12357065
申请日：2009-01-21
申请人： Wenzhuo Guo , Fabio Zürcher , Arvind Kamath , Joerg Rockenberger
发明人： Wenzhuo Guo , Fabio Zürcher , Arvind Kamath , Joerg Rockenberger
IPC分类号： C09D183/16 , H01L21/208
CPC分类号： H01L21/02667 , C08G77/56 , C08K5/55 , C08K2201/001 , C09D11/52 , C09D183/16 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/208 , H01L27/1292 , H01L29/167 , H01L29/66757
摘要： Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.
摘要翻译：掺杂的半导体油墨配方，制造掺杂的半导体油墨配方的方法，涂覆或印刷薄膜的方法，从薄膜形成电子器件和/或结构的方法，以及用于修改和控制薄膜晶体管的阈值电压的方法，其使用披露了这些电影。可以将期望的掺杂剂添加到包含IVA族化合物和溶剂的油墨配方中，然后可以将油墨印刷在基材上以形成薄膜和诸如薄膜晶体管的导电结构/器件。通过在打印之前向墨水添加定制量的掺杂剂，可以在掺杂剂激活时独立地控制由掺杂半导体油墨制成的薄膜晶体管的阈值电压。

2. 发明授权

US08624049B2 Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions 有权
标题翻译：掺杂基取代的半导体前体化合物，含有它们的组合物，以及制备这些化合物和组合物的方法
公开(公告)号：US08624049B2
公开(公告)日：2014-01-07
申请号：US12689210
申请日：2010-01-18
申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
发明人： Wenzhuo Guo , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
IPC分类号： C07F7/08
CPC分类号： C07F7/0896
摘要： Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.
摘要翻译：掺杂基取代的（环）硅烷化合物，含有这些化合物的液相组合物及其制备方法。这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂硅烷膜印刷或旋涂到基底上，该基底可以容易地转化为适合于电子器件的掺杂的非晶或多晶硅膜。因此，本发明有利地从掺杂的“液态硅”组合物提供商业品质和掺杂半导体膜的量。

3. 发明授权

US08372194B1 Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权
标题翻译：形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法
公开(公告)号：US08372194B1
公开(公告)日：2013-02-12
申请号：US12020481
申请日：2008-01-25
申请人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
发明人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
IPC分类号： C09D183/16
CPC分类号： H01L21/02576 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628
摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
摘要翻译：用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的液态硅具有商业质量和数量的掺杂半导体膜。

4. 发明授权

US08066805B2 Metal inks, methods of making the same, and methods for printing and/or forming metal films 有权
标题翻译：金属油墨，其制造方法以及印刷和/或形成金属膜的方法
公开(公告)号：US08066805B2
公开(公告)日：2011-11-29
申请号：US12131002
申请日：2008-05-30
申请人： Fabio Zürcher , Aditi Chandra , Wenzhuo Guo , Erik Scher , Mao Takashima , Joerg Rockenberger
发明人： Fabio Zürcher , Aditi Chandra , Wenzhuo Guo , Erik Scher , Mao Takashima , Joerg Rockenberger
IPC分类号： C23C16/00 , C09D1/00 , B05D3/00
CPC分类号： C23C18/1692 , B41M3/006 , C08K3/10 , C09D7/61 , C09D11/38 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/1658 , C23C18/31 , C23C18/44
摘要： Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.
摘要翻译：公开了可印刷金属配方，制备方法，以及从金属油墨前体涂布或印刷薄膜的方法。金属配方通常包括一种或多种组合物4,5,6,7,8,9,10,11或12金属盐或金属配合物，一种或多种适于促进制剂涂布和/或印刷的溶剂，以及一种或多种任选的添加剂，其在将金属盐或金属络合物还原成元素金属和/或其合金时形成（仅）气态或挥发性副产物。制剂可以通过将金属盐或金属络合物和溶剂组合，并将金属盐或金属络合物溶解在溶剂中来形成制剂，。薄膜可以通过在基底上涂覆或印刷金属制剂来制备; 除去溶剂以形成含金属的前体膜; 并还原含金属的前体膜。

5. 发明授权

US08840857B1 Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions 有权
标题翻译：杂环半导体前体化合物，含有它们的组合物，以及制备这些化合物和组合物的方法
公开(公告)号：US08840857B1
公开(公告)日：2014-09-23
申请号：US13494895
申请日：2012-06-12
申请人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
发明人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
IPC分类号： C01B33/00
CPC分类号： C01B33/00 , C01B33/04
摘要： Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.
摘要翻译：杂环硅烷化合物及其制备方法。这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂的硅烷膜印刷或旋涂到可以容易地转化成掺杂的非晶硅膜（也可以在一定程度上被氢化）的基底上，或掺杂多晶半导体薄膜适用于电子设备。因此，本发明有利地提供了来自“掺杂液体硅”组合物的商业品质和掺杂半导体膜的量。

6. 发明申请

US20110178321A1 Dopant Group-Substituted Semiconductor Precursor Compounds, Compositions Containing the Same, and Methods of Making Such Compounds and Compositions 有权
标题翻译：掺杂剂组取代的半导体前体化合物，其组合物及其制备方法
公开(公告)号：US20110178321A1
公开(公告)日：2011-07-21
申请号：US12689210
申请日：2010-01-18
申请人： Wenzhuo GUO , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
发明人： Wenzhuo GUO , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
IPC分类号： C07F7/08
CPC分类号： C07F7/0896
摘要： Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.
摘要翻译：掺杂基取代的（环）硅烷化合物，含有这些化合物的液相组合物及其制备方法。这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂硅烷膜印刷或旋涂到基底上，该基底可以容易地转化为适合于电子器件的掺杂的非晶或多晶硅膜。因此，本发明有利地从掺杂的“液态硅”组合物提供商业品质和掺杂半导体膜的量。

7. 发明授权

US07314513B1 Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权
标题翻译：形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法
公开(公告)号：US07314513B1
公开(公告)日：2008-01-01
申请号：US10949013
申请日：2004-09-24
申请人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
发明人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
IPC分类号： C09D183/16
CPC分类号： H01L21/02576 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628
摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
摘要翻译：用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。

8. 发明授权

US08603426B1 Method of making a silicon-containing film 有权
标题翻译：制造含硅膜的方法
公开(公告)号：US08603426B1
公开(公告)日：2013-12-10
申请号：US13730432
申请日：2012-12-28
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B21/068
CPC分类号： C01B6/00 , C01B6/003 , C01B6/34
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译：制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺，与传统的光刻工艺。

9. 发明授权

US08211396B1 Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions 有权
标题翻译：杂环半导体前体化合物，含有它们的组合物，以及制备这些化合物和组合物的方法
公开(公告)号：US08211396B1
公开(公告)日：2012-07-03
申请号：US10950373
申请日：2004-09-24
申请人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
发明人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
IPC分类号： C01B33/00
CPC分类号： C01B33/00 , C01B33/04
摘要： Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.
摘要翻译：杂环硅烷化合物及其制备方法。这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂的硅烷膜印刷或旋涂到可以容易地转化成掺杂的非晶硅膜（也可以在一定程度上被氢化）的基底上，或掺杂多晶半导体薄膜适用于电子设备。因此，本发明有利地提供了来自“掺杂液体硅”组合物的商业品质和掺杂半导体膜的量。

10. 发明授权

US07981482B1 Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权
标题翻译：形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法
公开(公告)号：US07981482B1
公开(公告)日：2011-07-19
申请号：US11455976
申请日：2006-06-19
申请人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
发明人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
IPC分类号： C08J7/06
CPC分类号： H01L21/02576 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628
摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
摘要翻译：用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。

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