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1. 发明授权

US06319809B1 Method to reduce via poison in low-k Cu dual damascene by UV-treatment 有权
标题翻译：通过紫外线处理减少低k Cu双镶嵌物的通过毒物的方法
公开(公告)号：US06319809B1
公开(公告)日：2001-11-20
申请号：US09614595
申请日：2000-07-12
申请人： Weng Chang , Lain-Jong Li , Shwang Ming Jeng , Syun-Ming Jang
发明人： Weng Chang , Lain-Jong Li , Shwang Ming Jeng , Syun-Ming Jang
IPC分类号： H01L2144
CPC分类号： H01L21/76825 , H01L21/76807 , H01L21/76814
摘要： A method to reduce via poisoning in low-k copper dual damascene interconnects through ultraviolet (UV) irradiation of the damascene structure is disclosed. This is accomplished by irradiating the insulative layers each time the layers are etched to form a portion of the damascene structure. Thus, irradiation is performed once after the forming of a trench or a via, and again for the second time when the insulative layers are etched to form the remaining trench or via. The trench and hole openings of the dual damascene structure are exposed to UV light in a dry ozone environment, which then favorably alters the surface characteristics of the low-k dielectric walls which are normally hydrophobic. Hence, during etching, moisture is not absorbed into the walls. Furthermore, it is found that the UV treatment inhibits reaction between the walls and the photoresist used during the forming of the damascene structure, thereby providing clean openings without any photoresist residue, and hence, much less poisoned contacts/vias. Consequently, as copper is deposited into the clean damascene, voids are avoided, and a Cu dual damascene interconnect with low RC delay characteristics is obtained.
摘要翻译：公开了一种通过紫外（UV）照射大马士革结构来减少低k铜双镶嵌互连中的通孔中毒的方法。这是通过在每次蚀刻层以形成镶嵌结构的一部分时照射绝缘层来实现的。因此，在形成沟槽或通孔之后进行一次照射，并且再次在绝缘层被蚀刻以形成剩余的沟槽或通孔时再次进行。双重镶嵌结构的沟槽和孔洞在干燥臭氧环境中暴露于紫外线，这有利地改变通常是疏水性的低k电介质壁的表面特性。因此，在蚀刻期间，水分不会被吸收到壁中。此外，发现UV处理抑制在形成镶嵌结构期间使用的壁和光致抗蚀剂之间的反应，从而提供清洁的开口，而没有任何光致抗蚀剂残留物，因此，更少中毒的触点/通孔。因此，当铜沉积到清洁的镶嵌中时，避免了空隙，并且获得具有低RC延迟特性的铜双镶嵌互连。

2. 发明授权

US06372661B1 Method to improve the crack resistance of CVD low-k dielectric constant material 有权
标题翻译：提高CVD低介电常数材料抗裂性的方法
公开(公告)号：US06372661B1
公开(公告)日：2002-04-16
申请号：US09617011
申请日：2000-07-14
申请人： Cheng Chung Lin , Shwang Ming Jeng , Lain Jong Li
发明人： Cheng Chung Lin , Shwang Ming Jeng , Lain Jong Li
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/3144 , H01L21/3145 , H01L21/31633 , H01L21/76807 , H01L24/05 , H01L2924/14 , Y10S438/954 , H01L2924/00
摘要： A method of fabricating a CVD low-k SiOCN material. The first embodiment comprising the following steps. MeSiH3, N2O, and N2 are reacted at a molar ratio of from about 1:5:10 to 1:10:15, at a plasma power from about 0 to 400 W to deposit a final deposited film. The final deposited film is treated to stabilize the final deposited film to form a CVD low-k SiOCN material. The second embodiment comprising the following steps. A starting mixture of MeSiH3, SiH4, N2O, and N2 is reacted at a molar ratio of from about 1:1:5:10 to 1:5:10:15, in a plasma in a helium carrier gas at a plasma power from about 0 to 400 W to deposit a CVD low-k SiOCN material.
摘要翻译：一种制造CVD低k SiOCN材料的方法。第一实施例包括以下步骤。 MeSiH 3，N 2 O和N 2以约1:5:10至1:10:15的摩尔比以约0-400W的等离子体功率反应，沉积最后的沉积膜。处理最终沉积的膜以稳定最终沉积膜以形成CVD低k SiOCN材料。第二实施例包括以下步骤。在氦载气中的等离子体中以等离子体功率的等离子体功率，以约1:1:5:10至1:5:10:15的摩尔比使MeSiH 3，SiH 4，N 2 O和N 2的起始混合物反应约0至400W以沉积CVD低k SiOCN材料。

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