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1. 发明申请

US20070263327A1 GMR SENSOR HAVING AN UNDER-LAYER TREATED WITH NITROGEN FOR INCREASED MAGNETORESISTANCE 失效
标题翻译：具有用于增加磁阻的氮处理的下层的GMR传感器
公开(公告)号：US20070263327A1
公开(公告)日：2007-11-15
申请号：US11769519
申请日：2007-06-27
申请人： Wen-yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
发明人： Wen-yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than or monolayer. The amount of nitrogen deposited on top of the alumina substrate is not enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface.
摘要翻译：具有已经用氮气（氮化）处理的衬底的磁阻传感器。氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。沉积在氧化铝顶部的氮的量小于或等于两个单层，优选小于或者单层。沉积在氧化铝基体顶部的氮的量不足以构成氮层，但是影响氧化铝的结构以使氧化铝具有所需的晶体结构和非常光滑的表面。

2. 发明申请

US20060158791A1 GMR sensor having layers treated with nitrogen for increased magnetoresistance 有权
标题翻译： GMR传感器具有用氮处理的层以增加磁阻
公开(公告)号：US20060158791A1
公开(公告)日：2006-07-20
申请号：US11039085
申请日：2005-01-18
申请人： Wen-yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
发明人： Wen-yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.
摘要翻译：一种磁阻传感器，其具有已经用氮气（氮化）处理并且在沉积期间具有氮原位加入的Ta盖层的衬底。氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。沉积在氧化铝顶部的氮的量小于或等于两个单层，并且优选小于单层。沉积在氧化铝基体上的氮的量足以构成氮层，但影响氧化铝的结构，使氧化铝具有所需的结晶结构和非常光滑的表面。盖层中的氮可以通过在Ar气氛中在具有少量氮的溅射沉积室中沉积Ta盖层来形成。

3. 发明申请

US20070247764A1 GMR SENSOR HAVING A CAPPING LAYER TREATED WITH NITROGEN FOR INCREASED MAGNETORESISTANCE 失效
标题翻译：具有用于增加磁阻的硝酸盐处理的吸收层的GMR传感器
公开(公告)号：US20070247764A1
公开(公告)日：2007-10-25
申请号：US11769533
申请日：2007-06-27
申请人： Wen-Yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
发明人： Wen-Yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
IPC分类号： G11B5/31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A magnetoresistive sensor having a Ta cap layer with nitrogen added in situ during deposition. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere. The resulting nitrogenated cap layer exhibits reduced specular scattering, which results in improved magnetic performance of the magnetoresistive sensor.
摘要翻译：具有在沉积期间原位加氮的Ta盖层的磁阻传感器。盖层中的氮可以通过在Ar气氛中在具有少量氮的溅射沉积室中沉积Ta盖层来形成。所得到的氮化盖层表现出减少的镜面散射，这导致磁阻传感器的改善的磁性能。

4. 发明申请

US20070144616A1 Method for controlling magnetostriction in a free layer of a magnetoresistive sensor 失效
标题翻译：用于控制磁阻传感器自由层中的磁致伸缩的方法
公开(公告)号：US20070144616A1
公开(公告)日：2007-06-28
申请号：US11318274
申请日：2005-12-22
申请人： Ben Thai , Dulip Welipitiya
发明人： Ben Thai , Dulip Welipitiya
IPC分类号： H01F41/14
CPC分类号： H01F41/306 , B82Y25/00 , B82Y40/00 , G01R33/063 , G01R33/093 , G01R33/18 , G11B5/3163 , G11B5/3906 , H01F10/3272 , H01F41/304 , H01L43/12 , Y10T29/49032
摘要： A method for controlling magnetostriction in a free layer of a magnetoresistive sensor. A pinned layer structure is deposited and then a spacer layer, preferably Cu is deposited. Oxygen is introduced into the spacer layer. The oxygen can be introduced either during the deposition of the spacer layer or after the spacer layer has been deposited. A free layer structure is then deposited over the spacer layer. A capping layer such as Ta can be deposited over the free layer structure. The sensor is annealed to set the magnetization of the pinned layer. In the process of annealing the sensor the oxygen migrates out of the spacer. After annealing, no significant amount of oxygen is present in either the spacer layer or the free layer structure, and only trace amounts of oxygen are present in the Ta capping layer. Although no Oxygen remains in either the spacer layer or the free layer, the introduction of oxygen during manufacture causes the finished free layer to have a lower magnetostriction (ie greater negative magnetostriction).
摘要翻译：一种用于控制磁阻传感器的自由层中的磁致伸缩的方法。沉积被钉层结构，然后沉积间隔层，优选沉积Cu。将氧气引入到间隔层中。可以在间隔层的沉积过程中或在间隔层沉积之后引入氧。然后在间隔层上沉积自由层结构。可以在自由层结构上沉积诸如Ta的覆盖层。将传感器退火以设定被钉扎层的磁化。在对传感器进行退火的过程中，氧从间隔物中迁移出去。退火后，间隔层或自由层结构中不存在显着量的氧，Ta覆盖层中仅存在微量的氧。尽管在隔离层或自由层中不存在氧气，但是在制造过程中引入氧会导致成品自由层具有较低的磁致伸缩（即较大的负磁致伸缩）。

5. 发明申请

US20070165339A1 Control and manipulation of pinned layer remanence of a platinum manganese based bottom spin valve 审中-公开
标题翻译：控制和操作铂锰底部自旋阀的钉扎层剩磁
公开(公告)号：US20070165339A1
公开(公告)日：2007-07-19
申请号：US11333042
申请日：2006-01-17
申请人： Dulip Welipitiya
发明人： Dulip Welipitiya
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/30 , H01F10/3268 , H01F41/18 , H01F41/303 , H01L43/12
摘要： Methods and apparatus provide a magnetic head that includes a magnetoresistive read sensor. A remanence of a pinned layer within the read sensor can be improved without substantially altering other physical or magnetic properties of the read sensor. Changing a sputtering gas flow rate during deposition of an antiferromagnetic layer within the read sensor can lower the remanence of the pinned layer and hence a remanence of the read sensor.
摘要翻译：方法和装置提供包括磁阻读取传感器的磁头。读取传感器内的被钉扎层的剩磁可以改善，而基本上不改变读取传感器的其它物理或磁性。在读取传感器内的反铁磁层沉积期间改变溅射气体流速可以降低被钉扎层的剩磁，从而降低读取传感器的剩磁。

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