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1. 发明申请

US20070223274A1 Complex Memory Chip 审中-公开
标题翻译：复杂内存芯片
公开(公告)号：US20070223274A1
公开(公告)日：2007-09-27
申请号：US11689760
申请日：2007-03-22
申请人： Wen-Chieh Lee , Hsiang-Cheng Ho
发明人： Wen-Chieh Lee , Hsiang-Cheng Ho
IPC分类号： G11C14/00 , G11C7/10 , G11C11/34
CPC分类号： G11C5/066 , G11C5/14 , G11C11/005
摘要： A complex memory chip is provided. The complex memory chip comprises a first pin, a second pin, a voltage generator, a flash memory, and a static random access memory (SRAM). The first pin is capable of transmitting a first voltage. The second pin is capable of transmitting a second voltage which is lower than the first voltage, so as to define a working voltage in association with the first voltage. The voltage generator generates a third voltage according to the first voltage, wherein the third voltage is greater than the first voltage. The flash memory and the SRAM operate under the working voltage. The flash memory erases data according to the third voltage.
摘要翻译：提供复杂的存储器芯片。复合存储器芯片包括第一引脚，第二引脚，电压发生器，闪存和静态随机存取存储器（SRAM）。第一引脚能够发送第一电压。第二引脚能够传输低于第一电压的第二电压，以便与第一电压相关联地定义工作电压。电压发生器根据第一电压产生第三电压，其中第三电压大于第一电压。闪存和SRAM在工作电压下工作。闪存根据第三电压擦除数据。

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