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    • 8. 发明申请
    • Methods and apparatus for preparing data for encrypted transmission
    • 用于准备加密传输数据的方法和装置
    • US20050207569A1
    • 2005-09-22
    • US11016479
    • 2004-12-16
    • Ji ZhangHain-Ching LiuJian Ding
    • Ji ZhangHain-Ching LiuJian Ding
    • H04L29/06H04N7/167H04N7/24H04L9/00
    • H04L29/06H04L29/06027H04L63/0428H04L65/4084H04L65/607H04L65/80H04N21/23476H04N21/6373
    • Methods and apparatus for preparing data for encrypted transmission. According to the current invention, a data bitstream may be processed to create side information. After extracting, generating and/or acquiring the side data, some or all of the data bitstream may be encrypted and then combined to create a combined data bitstream, ready for transmission. Subsequently, the combined data bitstream may be transmitted over a network. By processing a data bitstream to extract metadata about the bitstream before encrypting the data, some processing such as splicing, bit rate switching and/or statistical multiplexing done after encryption may be executed without requiring costly de-encryption/re-encryption steps based, in part, on inspecting the contents of the side data. The bitstream may represent video, audio, image or other data types. In some examples according to the current invention, a combined data bitstream may comprise multiple bitstreams, each at a different bit rate.
    • 用于准备加密传输数据的方法和装置。 根据本发明,可以处理数据比特流以创建边信息。 在提取,生成和/或获取边数据之后,可以对数据比特流中的一些或全部进行加密,然后组合以产生准备传输的组合数据比特流。 随后,组合的数据比特流可以通过网络传输。 通过处理数据比特流以在加密数据之前提取关于比特流的元数据,可以在不需要昂贵的去加密/重新加密步骤的情况下执行加密之后完成的诸如拼接,比特率切换和/或统计多路复用的一些处理, 部分,检查边数据的内容。 比特流可以表示视频,音频,图像或其他数据类型。 在根据本发明的一些示例中,组合数据比特流可以包括多个比特流,每个比特流以不同的比特率。
    • 10. 发明授权
    • Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
    • 具有聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程
    • US06818140B2
    • 2004-11-16
    • US10002397
    • 2001-10-31
    • Jian Ding
    • Jian Ding
    • H01L2100
    • H01J37/32871C23C16/517H01F2029/143H01J37/32082H01J37/321H01J37/32146H01J37/32165H01J37/32458H01J37/32467H01J37/32522H01J37/32688H01J37/32706H01J2237/3343H01J2237/3345H01J2237/3346H01J2237/3382H01L21/31116H01L21/6831
    • A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.
    • 一种高等离子体密度蚀刻工艺,用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层,通过提供覆盖在工件上并容纳半导体材料的室顶部,向腔室供应工艺气体 包含蚀刻剂前体物质,聚合物前体物质和氢气,将等离子体源功率施加到室中,并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟,并且室顶部半导体材料 包括氟清除剂前体材料。 优选地,工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地,处理气体还包括包含惰性气体的物质,例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型,则将该材料加热到高于聚合物冷凝温度,同时天花板被冷却。 在一些情况下,等离子体源功率施加器是覆盖在半导体天花板上的感应天线,天花板具有通过半导体环接触天花板的冷却/加热设备。 在这种情况下,感应天线在相邻的半导体环之间构成感应元件。