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1. 发明申请

US20160315009A1 UV-CURE PRE-TREATMENT OF CARRIER FILM FOR WAFER DICING USING HYBRID LASER SCRIBING AND PLASMA ETCH APPROACH 有权
标题翻译：使用混合激光扫描和等离子体蚀刻方法进行波长涂覆的载体膜的UV固化预处理
公开(公告)号：US20160315009A1
公开(公告)日：2016-10-27
申请号：US14697391
申请日：2015-04-27
申请人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
IPC分类号： H01L21/78 , H01L21/683 , H01L21/268 , H01L21/67 , H01L21/308 , H01L21/3065
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/3086 , H01L21/67069 , H01L21/67207 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，在半导体晶片的正面上切割具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附在基板载体的切割带上。在将半导体晶片粘附在切割带上之后，用UV固化工艺处理切割带。在通过UV固化处理处理切割带之后，在半导体晶片的前侧形成切割掩模，该切割掩模覆盖并保护集成电路。用激光刻划工艺对切割掩模进行图案化，以在切割掩模之间提供间隙，在半导体晶片的间隙暴露在集成电路之间。通过切割掩模层中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

2. 发明授权

US09159624B1 Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach 有权
标题翻译：使用混合激光划线和等离子体蚀刻方法对用于晶片切割的聚合物干膜进行真空层压
公开(公告)号：US09159624B1
公开(公告)日：2015-10-13
申请号：US14589913
申请日：2015-01-05
申请人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/8234
CPC分类号： H01L21/78 , H01L21/6836 , H01L21/8234 , H01L2221/68327 , H01L2221/6834
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves laminating a polymeric mask layer onto a front side of the semiconductor wafer by dry film vacuum lamination, the polymeric mask layer covering and protecting the integrated circuits. The method also involves patterning the polymeric mask layer with a laser scribing process to provide gaps in the polymeric mask layer, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the gaps in the polymeric mask layer to singulate the integrated circuits. The method also involves, subsequent to plasma etching the semiconductor wafer, removing the polymeric mask layer.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括通过干膜真空层压将聚合物掩模层层压到半导体晶片的正面上，该聚合物掩模层覆盖并保护集成电路。该方法还包括用激光划线工艺图案化聚合物掩模层，以在聚合物掩模层中提供间隙，间隙暴露集成电路之间的半导体晶片的区域。该方法还包括通过聚合物掩模层中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。该方法还涉及在等离子体蚀刻半导体晶片之后，去除聚合物掩模层。

3. 发明申请

US20160027697A1 HYBRID WAFER DICING APPROACH USING A RECTANGULAR SHAPED TWO-DIMENSIONAL TOP HAT LASER BEAM PROFILE OR A LINEAR SHAPED ONE-DIMENSIIONAL TOP HAT LASER BEAM PROFILE LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 有权
标题翻译：使用矩形形状的二维顶部激光光束轮廓或线形形状的一维顶部激光激光束轮廓激光扫描过程和等离子体蚀刻过程的混合波形方法
公开(公告)号：US20160027697A1
公开(公告)日：2016-01-28
申请号：US14337810
申请日：2014-07-22
申请人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/822 , H01L21/033 , H01L21/67 , H01L21/02
CPC分类号： H01L21/822 , B23K26/0732 , B23K26/364 , B23K2103/56 , H01L21/02057 , H01L21/0337 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/31105 , H01L21/32131 , H01L21/67069 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用顶帽激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

4. 发明授权

US09076860B1 Residue removal from singulated die sidewall 有权
标题翻译：从单个模具侧壁残留除去
公开(公告)号：US09076860B1
公开(公告)日：2015-07-07
申请号：US14248165
申请日：2014-04-08
申请人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Ajay Kumar , Brad Eaton
发明人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Ajay Kumar , Brad Eaton
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/308 , H01L21/67
CPC分类号： H01L21/02076 , H01L21/67092 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits. The method also involves, subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。该方法还包括用激光划线工艺对掩模进行图案化以在掩模中提供间隙，在半导体晶片的间隙暴露集成电路之间的半导体晶片。该方法还包括通过掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。该方法还涉及在等离子体蚀刻半导体晶片之后，从单个集成电路的侧壁去除蚀刻残留物。

5. 发明授权

US09601375B2 UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach 有权
公开(公告)号：US09601375B2
公开(公告)日：2017-03-21
申请号：US14697391
申请日：2015-04-27
申请人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
IPC分类号： H01L21/301 , H01L21/46 , H01L21/78 , H01L21/447 , H01L21/48 , H01L21/50 , H01L21/308 , H01L21/3065 , H01L21/268 , H01L21/67 , H01L21/683
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/3086 , H01L21/67069 , H01L21/67207 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.

6. 发明授权

US09349648B2 Hybrid wafer dicing approach using a rectangular shaped two-dimensional top hat laser beam profile or a linear shaped one-dimensional top hat laser beam profile laser scribing process and plasma etch process 有权
标题翻译：使用矩形二维顶帽激光束轮廓或线形一维顶帽激光束轮廓激光划线工艺和等离子体蚀刻工艺的混合晶片切割方法
公开(公告)号：US09349648B2
公开(公告)日：2016-05-24
申请号：US14337810
申请日：2014-07-22
申请人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/822 , H01L21/02 , H01L21/033 , H01L21/67
CPC分类号： H01L21/822 , B23K26/0732 , B23K26/364 , B23K2103/56 , H01L21/02057 , H01L21/0337 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/31105 , H01L21/32131 , H01L21/67069 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用顶帽激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

7. 发明申请

US20150221505A1 IMPROVED WAFER COATING 审中-公开
标题翻译：改进的涂层
公开(公告)号：US20150221505A1
公开(公告)日：2015-08-06
申请号：US14658102
申请日：2015-03-13
申请人： Jungrae Park , Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/02 , H01L21/683 , H01L21/308 , B05B3/10 , B05B1/00
CPC分类号： H01L21/02282 , B05B1/00 , B05B3/1014 , B05B3/1035 , H01L21/3081 , H01L21/3086 , H01L21/6715 , H01L21/6835 , H01L21/78 , H01L2221/68327
摘要： Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.
摘要翻译：描述了改进的晶片涂布工艺，装置和系统。在一个实施例中，改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。在一个实施例中，用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。可旋转台具有位于半导体晶片周边之外的向下倾斜区域。该设备包括位于可旋转台上方并被配置为在半导体晶片上分配液体的喷嘴。该装置还包括构造成旋转可旋转台的马达。

8. 发明授权

US09443765B2 Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing 有权
公开(公告)号：US09443765B2
公开(公告)日：2016-09-13
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/82 , H01L21/67 , H01L21/306 , H01L21/56 , H01L21/683 , H01L23/00
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.

9. 发明授权

US09112050B1 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing 有权
标题翻译：切割胶带通过晶片框架进行热管理，支持等离子体切割期间的环形冷却
公开(公告)号：US09112050B1
公开(公告)日：2015-08-18
申请号：US14276683
申请日：2014-05-13
申请人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/78
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/67069 , H01L21/67092 , H01L21/67109 , H01L21/67207 , H01L21/78
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves introducing a substrate supported by a substrate carrier into a plasma etch chamber. The substrate has a patterned mask thereon covering integrated circuits and exposing streets of the substrate. The substrate carrier has a backside. The method also involves supporting at least a portion of the backside of the substrate carrier on a chuck of the plasma etch chamber. The method also involves cooling substantially all of the backside of the substrate carrier, the cooling involving cooling at least a first portion of the backside of the substrate carrier by the chuck. The method also involves plasma etching the substrate through the streets to singulate the integrated circuits while performing the cooling substantially all of the backside of the substrate carrier.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括将由衬底载体支撑的衬底引入等离子体蚀刻室。衬底上具有图案化掩模，其覆盖集成电路并暴露衬底的街道。衬底载体具有背面。该方法还涉及将衬底载体的背侧的至少一部分支撑在等离子体蚀刻室的卡盘上。该方法还包括冷却基板载体的基本上所有背面，冷却涉及通过卡盘冷却基板载体的背面的至少第一部分。该方法还涉及通过街道等离子体蚀刻衬底以对集成电路进行单片化，同时基本上全部衬底载体的背面进行冷却。

10. 发明申请

US20150214111A1 WATER SOLUBLE MASK FORMATION BY DRY FILM VACUUM LAMINATION FOR LASER AND PLASMA DICING 审中-公开
标题翻译：水溶性膜由干膜真空层压制成，用于激光和等离子体处理
公开(公告)号：US20150214111A1
公开(公告)日：2015-07-30
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/683 , H01L21/306 , H01L21/56
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.
摘要翻译：描述了用于切割包括多个集成电路（IC）的半导体晶片的方法和系统。在一个实施方案中，一种方法包括将粘合带粘附到薄水溶性干膜上。该方法包括将粘附到粘合带上的薄水溶性干膜涂覆在半导体晶片的表面上。该方法包括从薄水溶性干膜中去除粘合带。用激光刻划工艺对薄水溶性干膜进行图案化，使IC之间的半导体晶片的区域暴露。该方法包括通过图案化的薄水溶性干膜中的间隙蚀刻半导体晶片，以及去除薄水溶性干膜。

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