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1. 发明申请

US20150028446A1 WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH 审中-公开
标题翻译：通过激光切割和等离子体蚀刻混合方法制造出宽阔的KERF
公开(公告)号：US20150028446A1
公开(公告)日：2015-01-29
申请号：US14513048
申请日：2014-10-13
申请人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/268 , H01L21/3065 , H01L27/04
CPC分类号： H01L21/82 , H01L21/268 , H01L21/3065 , H01L21/78 , H01L27/04
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，描述了通过使用激光划线和等离子体蚀刻混合方法的具有宽切口的晶片切割的方法。例如，通过切割由切割街道分离的多个集成电路的半导体晶片的切割方法包括在半导体晶片上形成掩模，该掩模具有覆盖并保护集成电路的层。该方法还包括用激光划线工艺对掩模进行图案化以提供具有用于每个切割街道的一对平行间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。每对平行间隙的每个间隙分开一段距离。该方法还包括通过图案化掩模中的间隙蚀刻半导体晶片以对集成电路进行分离。

2. 发明申请

US20140017882A1 METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH 有权
公开(公告)号：US20140017882A1
公开(公告)日：2014-01-16
申请号：US13917508
申请日：2013-06-13
申请人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Todd Egan , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Todd Egan , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/78
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/308 , H01L21/3081 , H01L21/31127 , H01L21/78
摘要： Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.

3. 发明申请

US20150011073A1 LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND SMOOTH SIDEWALL 审中-公开
标题翻译：激光切割和等离子体蚀刻用于高切割强度和平滑面
公开(公告)号：US20150011073A1
公开(公告)日：2015-01-08
申请号：US14293227
申请日：2014-06-02
申请人： Wei-Sheng Lei , Tong Liu , Madhava Rao Yalamanchili , Brad Eaton , Aparna Iyer , Ajay Kumar
发明人： Wei-Sheng Lei , Tong Liu , Madhava Rao Yalamanchili , Brad Eaton , Aparna Iyer , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/67 , H01L21/308
CPC分类号： H01L21/78 , H01L21/3065 , H01L21/3086 , H01L21/67207
摘要： In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a hybrid plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch with a plasma based on a combination of NF3 and CF4. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation.
摘要翻译：在实施例中，实施涉及初始激光划片和随后的等离子体蚀刻的混合晶片或衬底切割工艺用于裸片切割。激光划片工艺可用于清洁地去除掩模层，有机和无机介电层以及器件层。然后可以在曝光或部分蚀刻晶片或衬底时终止激光蚀刻工艺。在实施例中，使用混合等离子体蚀刻方法来对晶片进行骰子，其中采用各向同性蚀刻来改善基于NF 3和CF 4的组合的等离子体的各向异性蚀刻之后的管芯侧壁。各向同性蚀刻在单片切割之后从各向异性蚀刻的模具侧壁去除各向异性蚀刻副产物，粗糙度和/或扇贝。

4. 发明授权

US08859397B2 Method of coating water soluble mask for laser scribing and plasma etch 有权
标题翻译：用于激光划线和等离子体蚀刻的水溶性掩模涂层方法
公开(公告)号：US08859397B2
公开(公告)日：2014-10-14
申请号：US13917508
申请日：2013-06-13
申请人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Todd Egan , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Todd Egan , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/311 , H01L21/308 , H01L21/3065 , H01L21/78
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/308 , H01L21/3081 , H01L21/31127 , H01L21/78
摘要： Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.
摘要翻译：使用由第一水溶性薄膜层和第二水溶性层组成的晶片切割的激光划线和等离子体蚀刻的方法。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成混合掩模。混合掩模由设置在集成电路上的第一水溶性层和设置在第一水溶性层上的第二水溶性层组成。该方法还包括用激光划线工艺图案化混合掩模，以提供具有间隙的图案化混合掩模，暴露集成电路之间的半导体晶片的区域。该方法还包括通过图案化混合掩模中的间隙蚀刻半导体晶片以对集成电路进行分离。

5. 发明申请

US20140179084A1 WAFER DICING FROM WAFER BACKSIDE 有权
标题翻译： WAFER从WAFER BACKSIDE开始
公开(公告)号：US20140179084A1
公开(公告)日：2014-06-26
申请号：US14095824
申请日：2013-12-03
申请人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Saravjeet Singh , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Saravjeet Singh , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/822
CPC分类号： H01L21/822 , B23K26/0624 , B23K26/18 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L21/3081 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside. The protection tape is the removed from the wafer front side.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。例如，一种方法包括将保护带施加到晶片正面，所述晶片具有附接到晶片背面的切割带。切割胶带从晶片背面去除，以露出设置在晶片背面和切割胶带之间的管芯附着膜。或者，如果在晶片背面和切割带之间不设置管芯附着膜，则在该操作中将芯片附着膜施加到晶片背面。将水溶性掩模施加到晶片背面。在晶片背面进行激光划线，以切割掩模，芯片附着膜和晶片，包括包括在晶片的正面和背面内的所有层。执行等离子体蚀刻以处理或清洁由激光划线暴露的晶片的表面。执行晶片背面清洁，并且将第二切割带施加到晶片背面。保护带从晶片正面去除。

6. 发明授权

US08951819B2 Wafer dicing using hybrid split-beam laser scribing process with plasma etch 有权
标题翻译：使用等离子体蚀刻的混合分束激光划线工艺进行晶片切割
公开(公告)号：US08951819B2
公开(公告)日：2015-02-10
申请号：US13180021
申请日：2011-07-11
申请人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
发明人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
IPC分类号： H01L21/00 , B23K26/00 , H01L21/3065 , H01L21/78 , H01L21/67
CPC分类号： H01L21/3065 , B23K26/00 , B23K26/0006 , B23K26/0624 , B23K26/0661 , B23K26/0676 , B23K26/083 , B23K26/0869 , B23K26/361 , B23K26/40 , B23K26/53 , B23K37/047 , B23K2103/50 , B23K2103/56 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。一种方法包括在半导体晶片上形成掩模。掩模由覆盖和保护集成电路的层组成。掩模用分光束激光划线工艺图案化，以提供具有间隙的图案化掩模。图案化使得集成电路之间的半导体晶片的区域露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

7. 发明申请

US20140377937A1 METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH 有权
标题翻译：涂层用于激光切割和等离子体蚀刻的水溶性掩模的方法
公开(公告)号：US20140377937A1
公开(公告)日：2014-12-25
申请号：US14478354
申请日：2014-09-05
申请人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Todd Egan , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Aparna Iyer , Todd Egan , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/308
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/308 , H01L21/3081 , H01L21/31127 , H01L21/78
摘要： Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.
摘要翻译：使用由第一水溶性薄膜层和第二水溶性层组成的晶片切割的激光划线和等离子体蚀刻的方法。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成混合掩模。混合掩模由设置在集成电路上的第一水溶性层和设置在第一水溶性层上的第二水溶性层组成。该方法还包括用激光划线工艺图案化混合掩模，以提供具有间隙的图案化混合掩模，暴露集成电路之间的半导体晶片的区域。该方法还包括通过图案化混合掩模中的间隙蚀刻半导体晶片以对集成电路进行分离。

8. 发明申请

US20130017668A1 WAFER DICING USING HYBRID SPLIT-BEAM LASER SCRIBING PROCESS WITH PLASMA ETCH 有权
标题翻译：使用混合分光光束激光扫描工艺与等离子体蚀刻
公开(公告)号：US20130017668A1
公开(公告)日：2013-01-17
申请号：US13180021
申请日：2011-07-11
申请人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
发明人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
IPC分类号： H01L21/78 , C23F1/08 , H01L21/3065
CPC分类号： H01L21/3065 , B23K26/00 , B23K26/0006 , B23K26/0624 , B23K26/0661 , B23K26/0676 , B23K26/083 , B23K26/0869 , B23K26/361 , B23K26/40 , B23K26/53 , B23K37/047 , B23K2103/50 , B23K2103/56 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。一种方法包括在半导体晶片上形成掩模。掩模由覆盖和保护集成电路的层组成。掩模用分光束激光划线工艺图案化，以提供具有间隙的图案化掩模。图案化使得集成电路之间的半导体晶片的区域露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

9. 发明授权

US09048309B2 Uniform masking for wafer dicing using laser and plasma etch 有权
标题翻译：使用激光和等离子体蚀刻的晶圆切割均匀掩模
公开(公告)号：US09048309B2
公开(公告)日：2015-06-02
申请号：US13917366
申请日：2013-06-13
申请人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78
CPC分类号： H01L21/78
摘要： Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：描述了使用激光和等离子体蚀刻的用于晶片切割的均匀掩模。在一个例子中，对具有多个具有凸起或柱状的集成电路的半导体晶片进行切割的方法包括在半导体晶片上方的掩模上均匀地旋转，该掩模由覆盖并保护集成电路的层组成。然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

10. 发明申请

US20150122419A1 LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM 审中-公开
标题翻译：激光和等离子切割带双面紫外线固化胶片
公开(公告)号：US20150122419A1
公开(公告)日：2015-05-07
申请号：US14595120
申请日：2015-01-12
申请人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/67 , B23K26/36 , B23K26/40 , H01L21/683
CPC分类号： H01L21/67155 , B23K26/0624 , B23K26/0661 , B23K26/18 , B23K26/361 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/67069 , H01L21/67115 , H01L21/67207 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/68381
摘要： Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.
摘要翻译：激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜。形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。半导体晶片通过双面UV固化粘合剂膜耦合到载体基板。通过激光划线将掩模图案化以提供具有间隙的图案化掩模。图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对IC进行单片化。 UV固化粘合剂膜通过载体的UV照射部分固化。然后将分离的IC从仍然附着到载体基底上的部分固化的粘合剂膜分离，例如通过拾取和放置机单独分离。然后可以进一步固化可UV固化的粘合剂膜，以使膜完全从载体基材上除去。

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