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1. 发明申请

US20090197406A1 SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR 有权
标题翻译：使用含TANTALUM的前驱体和含氮的前驱体的氮化钛的顺序沉积
公开(公告)号：US20090197406A1
公开(公告)日：2009-08-06
申请号：US12417439
申请日：2009-04-02
申请人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
IPC分类号： H01L21/768 , H01L21/3205
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
摘要翻译：本发明的实施例提供了一种通过采用原子层沉积（ALD）工艺在衬底上形成氮化钽材料的方法。该方法包括将安瓿内的钽前体加热至预定温度以形成钽前体气体，并将基底依次暴露于钽前体气体和氮气前体以形成氮化钽材料。此后，可以在基板上沉积成核层和体层。在一个实例中，在等离子体增强的ALD工艺期间可以由氮前体形成自由基氮化合物。氮前体可以包括氮或氨。在另一个实例中，在沉积过程中可以使用金属 - 有机钽前体。

2. 发明申请

US20110070730A1 SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR 审中-公开
标题翻译：使用含TANTALUM的前体和含氮的前体的硝酸氮铵的顺序沉积
公开(公告)号：US20110070730A1
公开(公告)日：2011-03-24
申请号：US12914937
申请日：2010-10-28
申请人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
IPC分类号： H01L21/768
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
摘要翻译：本发明的实施例提供了一种通过采用原子层沉积（ALD）工艺在衬底上形成氮化钽材料的方法。该方法包括将安瓿内的钽前体加热至预定温度以形成钽前体气体，并将基底依次暴露于钽前体气体和氮气前体以形成氮化钽材料。此后，可以在基板上沉积成核层和体层。在一个实例中，在等离子体增强的ALD工艺期间可以由氮前体形成自由基氮化合物。氮前体可以包括氮或氨。在另一个实例中，在沉积过程中可以使用金属 - 有机钽前体。

3. 发明申请

US20060019494A1 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 有权
公开(公告)号：US20060019494A1
公开(公告)日：2006-01-26
申请号：US11231386
申请日：2005-09-21
申请人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
IPC分类号： H01L21/44
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.

4. 发明授权

US07514358B2 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 有权
标题翻译：使用含钽前体和含氮前体连续沉积氮化钽
公开(公告)号：US07514358B2
公开(公告)日：2009-04-07
申请号：US11231386
申请日：2005-09-21
申请人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
摘要翻译：本发明的实施例提供一种通过采用原子层沉积（ALD）工艺在衬底上形成氮化钽材料的方法。该方法包括将安瓿内的钽前体加热至预定温度以形成钽前体气体，并将基底依次暴露于钽前体气体和氮气前体以形成氮化钽材料。此后，可以在基板上沉积成核层和体层。在一个实例中，在等离子体增强的ALD工艺期间可以由氮前体形成自由基氮化合物。氮前体可以包括氮或氨。在另一个实例中，在沉积过程中可以使用金属 - 有机钽前体。

5. 发明授权

US06972267B2 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 有权
标题翻译：使用含钽前体和含氮前体连续沉积氮化钽
公开(公告)号：US06972267B2
公开(公告)日：2005-12-06
申请号：US10379438
申请日：2003-03-04
申请人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
IPC分类号： C23C16/04 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/31 , H01L21/469
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3 (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.
摘要翻译：公开了一种方法和装置，其特征是使用诸如原子层沉积（ALD）的顺序沉积技术沉积钽膜。该方法包括将基底连续暴露于含氮气体（例如氨NH 3）和含钽气体的流动。含钽气体由吸附在上面的前驱物（TBTET）Ta（NET 2 N 3）3（TBTDET）形成，底物。在将TBTDET吸附到基底层上之前，将TBTDET前体在预定的温度范围内加热。

6. 发明授权

US07699023B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07699023B2
公开(公告)日：2010-04-20
申请号：US11925667
申请日：2007-10-26
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
IPC分类号： C23C16/455 , C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.
摘要翻译：本文所述的实施例提供了用于执行原子层沉积工艺的装置和方法。在一个实施例中，沉积室组件包含具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖，以及从通道延伸到外部部分的底部表面室盖，底表面的形状和尺寸以基本上覆盖基板接收表面。该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。在一个示例中，气体源是气体箱组件，其通过至少一个分离配件附接到沉积室，并且包含远离气体出口的入口管。

7. 发明申请

US20050173068A1 Gas delivery apparatus and method for atomic layer deposition 有权
公开(公告)号：US20050173068A1
公开(公告)日：2005-08-11
申请号：US11077753
申请日：2005-03-11
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , C23F1/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

8. 发明授权

US08668776B2 Gas delivery apparatus and method for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置和方法
公开(公告)号：US08668776B2
公开(公告)日：2014-03-11
申请号：US12797999
申请日：2010-06-10
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：提供了在基板上形成薄层的装置和方法。处理室具有气体输送组件，该气体输送组件包括具有盖部分的盖和覆盖部件，该盖部分在盖的中心部分处共同限定出扩张通道，该覆盖部件具有从扩张通道延伸到外围的锥形底面覆盖部件的一部分。气体管道连接到膨胀通道并且与膨胀通道的中心成一定角度定位，以形成通过膨胀通道的圆形气流。室盖的底表面的形状和尺寸基本上覆盖基板接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。扼流圈设置在邻近锥形底面的周边的腔室盖上。

9. 发明授权

US07780788B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07780788B2
公开(公告)日：2010-08-24
申请号：US11077753
申请日：2005-03-11
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：提供了在基板上形成薄层的装置和方法。处理室具有气体输送组件，其包括具有盖部分的盖和覆盖部件，所述盖部在盖的中心部分处共同限定出扩张通道，所述覆盖部件具有从扩张通道延伸到外围的锥形底面覆盖部件的一部分。气体管道连接到膨胀通道并且与膨胀通道的中心成角度地定位，以形成通过膨胀通道的圆形气体流动。腔室盖的底表面的形状和尺寸基本上覆盖基底接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。扼流圈设置在邻近锥形底面的周边的腔室盖上。

10. 发明授权

US07422637B2 Processing chamber configured for uniform gas flow 失效
标题翻译：处理室配置为均匀气流
公开(公告)号：US07422637B2
公开(公告)日：2008-09-09
申请号：US11552727
申请日：2006-10-25
申请人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
发明人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/4409 , C23C16/4412 , C23C16/45521 , C23C16/4585
摘要： An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
摘要翻译：提供了一种在处理室中进行均匀气体流动的装置和方法。在一个实施例中，一种装置是一种边缘环，其包括具有从其突出的环形密封件的环形主体。密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。在另一个实施例中，提供了一种处理系统，其包括室主体，盖，衬底支撑件和多个流量控制孔。盖子设置在室主体上并且与其限定内部容积。衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。流量控制孔布置在基板支撑件和盖子之间。流量控制孔适于控制离开处理区域的气体流。

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