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1. 发明授权

US4832779A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4832779A
公开(公告)日：1989-05-23
申请号：US188135
申请日：1988-04-26
申请人： Wayne G. Fisher , Tommy J. Bennett , Cecil J. Davis , Robert T. Matthews
发明人： Wayne G. Fisher , Tommy J. Bennett , Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A rapid thermal processing apparatus and method wherein a transparent (e.g. quartz) vacuum wall is sealed to the process chamber by a radially elastically expandable metallic seal, e.g. a hollow metallic ring with a spring in its core, which has a soft surface portion which deforms inelastically to make a seal.
摘要翻译：一种快速热处理设备和方法，其中透明（例如石英）真空壁通过径向弹性可膨胀的金属密封件例如密封到处理室。一个中空的金属环，其中具有弹簧的中空的金属环，其具有柔软的表面部分，该表面部分会弹性变形以形成密封。

2. 发明授权

US4857132A Processing apparatus for wafers 失效
标题翻译：晶圆加工设备
公开(公告)号：US4857132A
公开(公告)日：1989-08-15
申请号：US203582
申请日：1988-05-27
申请人： Wayne G. Fisher
发明人： Wayne G. Fisher
IPC分类号： H01L21/00
CPC分类号： H01L21/67017 , Y10S438/935
摘要： A processing system wherein the process gas flow passages have a modified contour which reduces particle entrainment. This modified cross section increases the thickness of its stagnant boundary layer near most of a wall area of the piping, so that any particle which is deposited on the walls of the gas piping is much more likely to stay there permanently, and not be removed by subsequent local velocity maxima in turbulent flow.
摘要翻译：一种处理系统，其中处理气体流动通道具有减少颗粒夹带的改进轮廓。该改进的横截面增加了在管道的大部分壁面附近的停滞边界层的厚度，使得沉积在气体管道的壁上的任何颗粒更可能永久地停留在那里，并且不被随后局部速度最大值在湍流中。

3. 发明授权

US5102231A Semiconductor wafer temperature measurement system and method 失效
标题翻译：半导体晶圆温度测量系统及方法
公开(公告)号：US5102231A
公开(公告)日：1992-04-07
申请号：US647085
申请日：1991-01-29
申请人： Lee M. Loewenstein , John D. Lawrence , Wayne G. Fisher , Cecil J. Davis
发明人： Lee M. Loewenstein , John D. Lawrence , Wayne G. Fisher , Cecil J. Davis
IPC分类号： G01K5/52
CPC分类号： G01K5/52
摘要： A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.
摘要翻译：用于测量半导体晶片12的温度的系统包括光源14，可操作以确定光强度的光电检测器20和来自分束器16的预定固定位置的反射镜18.部件被定位成使得光从光源14入射分束器16，随后从反射镜18和晶片12反射并被光电检测器20接收。晶片12的温度变化基于接收光强度的变化来计算，取决于晶片的膨胀/收缩。可以基于已知的参考温度和晶片12温度的变化来计算绝对温度。还公开了一种用于测量包括使用多个反射镜和两个分束器的半导体晶片的温度的第二系统和方法。

4. 发明授权

US4879258A Integrated circuit planarization by mechanical polishing 失效
标题翻译：通过机械抛光的集成电路平面化
公开(公告)号：US4879258A
公开(公告)日：1989-11-07
申请号：US238954
申请日：1988-08-31
申请人： Wayne G. Fisher
发明人： Wayne G. Fisher
IPC分类号： B24B37/04 , B24B49/04 , H01L21/3105 , H01L21/768
CPC分类号： B24B37/04 , B24B49/04 , H01L21/31053 , H01L21/76819 , Y10S438/959
摘要： A process for planarizing the surface of a semiconductor wafer, after the wafer has been processed to form nonplanar topography layers on the blank, polished wafer, by mechanically removing material from this surface by abrasion until a desired planarity is attained. The mechanical planarization prevents step coverage problems encountered in further processing, avoids multiple step prior art planarizing methods, and can be effectively controlled by several simple methods.
摘要翻译：在半导体晶片的表面进行平面化处理之后，通过磨蚀将晶片机械地从该表面去除材料，直至获得所需的平面度，在晶片经过加工以在坯料抛光的晶片上形成非平面形貌层。机械平面化防止了进一步处理中遇到的步骤覆盖问题，避免了多步现有技术的平面化方法，并且可以通过几种简单的方法有效地控制。

5. 发明授权

US4830700A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4830700A
公开(公告)日：1989-05-16
申请号：US188177
申请日：1988-04-27
申请人： Cecil J. Davis , Robert T. Matthews , Wayne G. Fisher
发明人： Cecil J. Davis , Robert T. Matthews , Wayne G. Fisher
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A radiant heating processing apparatus and method for a rapid thermal processing system, wherein only the base of the reflector module is directly water cooled. The sides of the reflector module are not directly water cooled; instead, the module is made to be a slip fit into a chamber which does have water cooled walls. Thus, in applications where it is desired to be able to fit a rapid thermal processing radiant heating source through a restricted clearance, especially in application where it is desired to be able to insert the module through a vacuum flange, the necessary clearance is reduced by the width which would otherwise be required for water cooling of the sidewalls.
摘要翻译：一种用于快速热处理系统的辐射加热处理装置和方法，其中只有反射器模块的基底直接水冷。反射器模块的两侧不直接水冷; 相反，该模块被制成一个滑动配合到具有水冷壁的室中。因此，在希望能够通过限制的间隙适应快速热处理辐射热源的应用中，特别是在希望能够通过真空法兰插入模块的应用中，必要的间隙通过否则将需要用于侧壁的水冷却的宽度。

6. 发明授权

US4777804A Method and apparatus for easing surface particle removal by size increase 失效
标题翻译：通过尺寸增加来缓解表面颗粒去除的方法和装置
公开(公告)号：US4777804A
公开(公告)日：1988-10-18
申请号：US89696
申请日：1987-08-26
申请人： Robert A. Bowling , Wayne G. Fisher , Edwin G. Millis
发明人： Robert A. Bowling , Wayne G. Fisher , Edwin G. Millis
IPC分类号： B08B7/00 , H01L21/00 , H01L21/306 , F25B47/00
CPC分类号： H01L21/02043 , B08B7/0064 , H01L21/02052 , H01L21/67028
摘要： A method and apparatus is provided for removing submicron sized particles from the surface of a silicon semiconductor wafer (38). Conventional cleaning methods are capable of only removing particles that are about 1 micron or larger in size. The present invention provides a way to increase the submicron particles in size so that they are removable by the known methods. The silicon semiconductor wafer (38) is cooled by a refrigeration unit (36) or by exposure to liquid nitrogen (74). The cooled wafer (38) is then exposed to a condensable material (42) which is allowed to condense on the surface of the wafer (38). The condensable material will surround any particles that are on the surface and cause them to grow in size due to the formation of frozen crystals. Without allowing the crystals to melt, the enlarged particles then are removed by any of the known methods.
摘要翻译：提供了一种从硅半导体晶片（38）的表面去除亚微米尺寸的颗粒的方法和装置。传统的清洁方法只能去除大小约1微米或更大的颗粒。本发明提供了一种增加亚微米颗粒尺寸的方法，使得它们可通过已知方法除去。硅半导体晶片（38）由制冷单元（36）或通过暴露于液氮（74）来冷却。然后将冷却的晶片（38）暴露于冷凝材料（42），该冷凝材料允许在晶片（38）的表面上冷凝。可冷凝材料将包围表面上的任何颗粒，并由于形成冷冻晶体而导致其尺寸增长。不允许晶体熔化，然后通过任何已知的方法去除扩大的颗粒。

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