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1. 发明授权

US5352656A Method for the chemical vapor deposition of group IB and group VIIIB metal barrier layers 失效
标题翻译： IB族和VIIIB族金属阻挡层的化学气相沉积方法
公开(公告)号：US5352656A
公开(公告)日：1994-10-04
申请号：US852813
申请日：1992-03-17
申请人： Walter J. Lackey , John A. Hanigofsky , David N. Hill , Michael J. Shapiro , E. Kent Barefield , William B. Carter
发明人： Walter J. Lackey , John A. Hanigofsky , David N. Hill , Michael J. Shapiro , E. Kent Barefield , William B. Carter
IPC分类号： C23C16/30 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , H01L39/24 , B05D5/12 , C23C16/00
CPC分类号： B05D1/60 , C23C16/408 , C23C16/4481 , C23C16/4485 , C23C16/4486 , H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/704 , Y10S505/73 , Y10S505/734 , Y10S505/737
摘要： A method for applying a metal film barrier layer between a substrate and a superconductor coating or over a superconductivity coating using chemical vapor deposition in which low vapor pressure reactants are used, is disclosed, which comprises the steps of providing a substrate and a quantity of metal-bearing reagent and one or more reagents, placing the substrate within the furnace, introducing the metal-bearing reagent by a powder feeder means and then the reagents at different times into and reacting them in the furnace, resulting in the deposition first of a coating of metal onto the substrate and then of a coating consisting essentially of the superconducting reactant components onto the metal film; said reagents generally chosen to yield the group of oxide superconductors.
摘要翻译：公开了一种使用化学气相沉积在基底和超导体涂层之间或超导性涂层上施加金属膜阻挡层的方法，其中使用了低蒸气压反应物，其包括以下步骤：提供基底和一定数量的金属将基材放置在炉内，通过粉末给料装置引入含金属试剂，然后将试剂在不同时间引入炉中并使其在炉中反应，导致涂层首先沉积的金属，然后将基本上由超导反应物组分组成的涂层涂覆到金属膜上; 所述试剂通常选择产生一组氧化物超导体。

2. 发明授权

US5108983A Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition 失效
标题翻译：通过化学气相沉积快速沉积低蒸汽压力反应物的方法
公开(公告)号：US5108983A
公开(公告)日：1992-04-28
申请号：US439843
申请日：1989-11-21
申请人： Walter J. Lackey, Jr. , E. Kent Barefield , William B. Carter , John A. Hanigofsky , David N. Hill
发明人： Walter J. Lackey, Jr. , E. Kent Barefield , William B. Carter , John A. Hanigofsky , David N. Hill
IPC分类号： C23C16/30 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , H01L39/24
CPC分类号： B05D1/60 , C23C16/408 , C23C16/4481 , C23C16/4485 , C23C16/4486 , H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/704 , Y10S505/73 , Y10S505/734 , Y10S505/737
摘要： A method for applying coatings to substrates using chemical vapor deposition with low vapor pressure reagents is disclosed which comprises the steps of: (a) placing a substrate in a furnace means; (b) directly introducing powder reagents by a powder feeder means into said furnace means; and (c) vaporizing and reacting said reagents within said furnace means resulting in the deposition from the vapor phase of a coating on said substrate, wherein said coating can be an oxide superconductor.
摘要翻译：公开了一种使用化学气相沉积用低蒸气压试剂将涂料涂覆于基材的方法，其包括以下步骤：（a）将基材置于炉装置中; （b）通过粉末供给装置将粉末试剂直接引入所述炉装置; 和（c）在所述炉装置内蒸发和反应所述试剂，导致从所述基底上的涂层的气相沉积，其中所述涂层可以是氧化物超导体。

3. 依法登记的发明

USH1013H Process for the immobilization and volume reduction of low level radioactive wastes from thorium and uranium processing 失效
公开(公告)号：USH1013H
公开(公告)日：1992-01-07
申请号：US392327
申请日：1989-08-11
申请人： Richard F. Wormsbecher , Alan T. Chapman, Jr. , David N. Hill
发明人： Richard F. Wormsbecher , Alan T. Chapman, Jr. , David N. Hill
IPC分类号： G21F9/30
CPC分类号： G21F9/305
摘要： A process for the immobilization and volume reduction of low level radioactive wastes produced from the processing of rare earth recovery processes comprising mixing the waste residue with 0.1 to 50% of a fluxing agent and optionally with 0.1 to 50% silica sand, heating the mixture to a temperature in the range of about 1200.degree. to 1800.degree. C. to form molten glass, and pouring the molten glass into a suitable container to cool and solidify into a vitrified mass. Suitable fluxing agents include sodium hydroxide, sodium carbonate, sodium borate, sodium perborate, or mixtures thereof.

4. 发明授权

US4627903A Electrode for an electrostatic atomizing device 失效
标题翻译：静电雾化装置用电极
公开(公告)号：US4627903A
公开(公告)日：1986-12-09
申请号：US401833
申请日：1982-07-26
申请人： Alan T. Chapman , David N. Hill
发明人： Alan T. Chapman , David N. Hill
IPC分类号： B22F5/00 , B05B5/053 , C22C27/04 , C22C29/12 , C22C32/00 , B05B5/00 , B22F3/00
CPC分类号： B05B5/0533
摘要： This invention relates to the fabrication of an improved electrode for an electrostatic atomizing device. The electrode consists of metal oxide-metal composite fragments dispersed and bonded in a metallic matrix. The composite fragments contain submicron metallic fibers uniformally arrayed in a nonconducting (insulating) matrix. The electrostatic atomizing device includes a cell having a chamber disposed therein, a discharge spray means in communication with the cell, at least two electrodes disposed in the chamber and being in liquid contact with the liquid in the chamber, the liquid in the chamber being transported to the discharge spray means and atomized into droplets, and a mechanism for generating by means of the electrodes, a charge through the liquid within the chamber, wherein the charge enamating from the improved electrode is sufficient to generate free excess charge in the liquid within the chamber, and the liquid is atomized into droplets.
摘要翻译：本发明涉及一种用于静电雾化装置的改进电极的制造。电极由金属氧化物 - 金属复合片段分散并结合在金属基体中。复合碎片含有均匀排列在不导电（绝缘）基体中的亚微米金属纤维。静电雾化装置包括具有设置在其中的室的电池，与电池连通的放电喷射装置，设置在室中的至少两个电极，并且与室中的液体液体接触，室中的液体被输送到喷射喷雾装置并雾化成液滴，以及用于通过电极产生通过室内的液体的电荷的机构，其中从改进的电极搪瓷的电荷足以在内部的液体中产生游离的过量电荷室，液体被雾化成液滴。

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