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2. 发明授权

US07855399B2 Protection device of programmable semiconductor surge suppressor having deep-well structure 有权
标题翻译：具有深井结构的可编程半导体浪涌抑制器保护装置
公开(公告)号：US07855399B2
公开(公告)日：2010-12-21
申请号：US12585820
申请日：2009-09-25
申请人： Walance Sun , Ken Ou , Shouming Zhang , Man Ng
发明人： Walance Sun , Ken Ou , Shouming Zhang , Man Ng
IPC分类号： H01L29/73
CPC分类号： H01L27/0262
摘要： A protection device of programmable semiconductor surge suppressor having deep-well structure is provided comprising one, two or four protection units, each of which is composed of a PN-junction diode, a PNPN-type thyristor and a NPN-type triode connected with each other. It is characterized in that in the diode area on the frontal side of the N-type semiconductor base is formed a PN junction with impurity concentration changed gradiently from top to bottom according to the order of P+, P, N and N+; and a group of deep-wells with P-type impurities are positioned at the interface of the PN junction, making the PN junction form a concave-convex type interface. The present invention can be used in the program-controlled switchboard to protect the Subscriber Line Interface Circuit (SLIC) board. The above improvement can further improve the anti-lightning and anti-surge performance and the energy discharge capability of the whole device. The device of the present invention can reach a level of 3000˜3500 V according to the anti-lightning performance test.
摘要翻译：提供具有深阱结构的可编程半导体浪涌抑制器的保护装置，其包括一个，两个或四个保护单元，每个保护单元由PN结二极管，PNPN型晶闸管和与每个保护单元连接的NPN型三极管组成其他。其特征在于，在N型半导体基座的正面侧的二极管区域中，按照P +，P，N和N +的顺序，形成从上到下逐渐变化的杂质浓度的PN结; 并且一组具有P型杂质的深阱位于PN结的界面处，使得PN结形成凹凸型界面。本发明可用于程控交换机中以保护用户线接口电路（SLIC）板。上述改进可以进一步提高整个设备的防雷击和抗浪涌性能和能量放电能力。根据防雷击性能试验，本发明的装置可以达到3000〜3500V的水平。

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