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1. 发明专利

JP2012092008A Method for producing polycrystalline silicon rod 有权
标题翻译：生产多晶硅棒的方法
公开(公告)号：JP2012092008A
公开(公告)日：2012-05-17
申请号：JP2011231289
申请日：2011-10-21
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： FABRY LASZLO , THOMAS ALTMANN , KRAUS HEINZ
IPC分类号： C01B33/037
CPC分类号： C01B33/035
摘要： PROBLEM TO BE SOLVED: To avoid high temperature of a thin rod, contamination due to handling of a cleaned thin rod from intermediate storage to deposition, and insufficient cleaning action of the surface of the attached thin rod, and to improve the prior art.SOLUTION: In a method for producing a polycrystalline silicon rod by deposition of silicon on at least one thin rod in a reactor, before the silicon deposition, hydrogen halide is introduced into the reactor containing at least the one thin rod at a temperature of the thin rod of 400-1,000°C, and is irradiated with UV light, and as a result, halogen and hydrogen radicals are produced and the produced volatile halides and hydrides are removed from the reactor.
摘要翻译：要解决的问题：为了避免细棒的高温，由于处理从中间储存到沉积的清洁的细杆的污染以及附着的薄棒的表面的清洁作用不足，并且改善了先前的艺术。解决方案：在用于通过在反应器中的至少一个薄棒上沉积硅来制造多晶硅棒的方法中，在硅沉积之前，将卤化氢引入反应器中，所述反应器至少包含一个细棒，温度为的400-1000℃的细棒，并用紫外光照射，结果产生卤素和氢自由基，从反应器中除去生成的挥发性卤化物和氢化物。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2013170122A Chunk polycrystalline silicon, and method for cleaning polycrystalline silicon chunk 有权
标题翻译： CHUNK多晶硅和清洗多晶硅清洗方法
公开(公告)号：JP2013170122A
公开(公告)日：2013-09-02
申请号：JP2013012903
申请日：2013-01-28
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： TRAUNSPURGER GERHARD , FABRY LASZLO , PECH REINER
IPC分类号： C01B33/02 , C01B33/037
CPC分类号： C01B33/02 , C01B33/037 , C01P2002/88 , C01P2002/89 , C01P2002/90 , C01P2006/80 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/06 , H01L21/02046
摘要： PROBLEM TO BE SOLVED: To provide chunk polycrystalline silicon having a surface carbon concentration of 0.5-35 ppbw.SOLUTION: In a method for cleaning a polycrystalline silicon chunk having carbon contamination on the surface, a heat treatment of the polycrystalline silicon chunk in a reactor at a temperature of 350-600°C is included, and the polycrystalline silicon chunk exists in an inert gas atmosphere during the heat treatment, and the polycrystalline silicon chunk after the heat treatment has a surface carbon concentration of 0.5-35 ppbw.
摘要翻译：要解决的问题：提供表面碳浓度为0.5-35ppbw的块状多晶硅。解决方案：在用于清洁表面上具有碳污染的多晶硅块的方法中，在反应器中对多晶硅块进行热处理在350-600℃的温度下，在热处理期间，在惰性气体气氛中存在多晶硅块，热处理后的多晶硅块的表面碳浓度为0.5〜35ppbw。

3. 发明专利

JP2014031309A Polycrystalline silicon chunk and method for manufacturing the same 有权
标题翻译：多晶硅切块及其制造方法
公开(公告)号：JP2014031309A
公开(公告)日：2014-02-20
申请号：JP2013139470
申请日：2013-07-03
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： HANS WOCHNER , FABRY LASZLO
IPC分类号： C01B33/02 , B02C4/30
CPC分类号： C01B33/037 , B02C4/305 , B02C19/0056 , C01B33/02 , C22C29/08 , C22C38/00 , C30B29/06 , C30B35/007 , Y10T428/2982
摘要： PROBLEM TO BE SOLVED: To provide a polycrystalline silicon chunk which is a cube having a metal content of below 200 pptw and a dopant content of below 50 ppta.SOLUTION: The provided method for manufacturing a polycrystalline silicon chunk includes the steps of: feeding a polycrystalline silicon rod; providing a cubic chunk by pulverizing this polycrystalline silicon rod; and washing the polycrystalline silicon chunk. In this method, the pulverization is performed by using a spiked roll crusher having at least one spiked roll, whereas this spiked roll comprises a steel either including, together with 0.1-10% of a metal carbide selected from the group consisting of titanium carbide, chromium carbide, molybdenum carbide, vanadium carbide, and nickel carbide, a WC phase or WC phase or including 1-25% W.
摘要翻译：要解决的问题：提供一种多晶硅块，其是具有低于200pptw的金属含量和低于50ppt的掺杂剂含量的立方体。解决方案：提供的制造多晶硅块的方法包括以下步骤：多晶硅棒; 通过粉碎该多晶硅棒提供立方体块; 并洗涤多晶硅块。在该方法中，通过使用具有至少一个加标辊的加标辊式破碎机进行粉碎，而该加标辊包括含有0.1-10％的选自碳化钛，碳化铬，碳化钼，碳化钒和碳化镍，WC相或WC相，或包括1-25％W。

4. 发明专利

JP2013129593A Polycrystalline silicon member and method of fracturing silicon body 有权
$Polycrystalline silicon member and method of fracturing silicon body$
标题翻译：多晶硅成员和硅体断裂方法
公开(公告)号：JP2013129593A
公开(公告)日：2013-07-04
申请号：JP2012278081
申请日：2012-12-20
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： FABRY LASZLO , GRUEBL PETER , HUBER CHRISTIAN
IPC分类号： C01B33/02 , B02C17/14 , B02C19/00 , B02C19/18
CPC分类号： C01B33/02 , B26F3/002 , C01B33/035 , Y10T225/10
摘要： PROBLEM TO BE SOLVED: To provide a polycrystalline silicon member having at least one fractured surface or cut surface, of which metal contamination is 0.07 ng/cmto 1 ng/cm.SOLUTION: There is provided a method for fracturing a silicon body, preferably a polycrystalline silicon rod. The method is capable of obtaining a silicon member having a fractured surface that contains metal contamination of 0.07 ng/cmto 1 ng/cm, the method including: (a) a step of measuring a minimum inherent bending frequency of a silicon body; and (b) a step of exciting the silicon body at the minimum inherent bending frequency by a vibration generator, performing excitation at the excitation point of the silicon body, and fracturing the silicon body at the excitation point.
摘要翻译：要解决的问题：提供具有至少一个断裂表面或切割表面的多晶硅构件，其金属污染物为0.07ng / cm至1ng / cm。解决方案：提供了一种用于压裂硅体的方法，优选地多晶硅棒。该方法能够获得具有0.07ng / cm至1ng / cm的金属污染的断裂表面的硅构件，该方法包括：（a）测量硅体的最小固有弯曲频率的步骤; 以及（b）通过振动发生器以最小的固有弯曲频率激发硅体的步骤，在硅体的激发点进行激励，并在激发点压裂硅体。

5. 发明专利

ES2589960T3 Procedimiento para la producción de una barra de silicio policristalino aleado con germanio 未知
公开(公告)号：ES2589960T3
公开(公告)日：2016-11-17
申请号：ES09177857
申请日：2009-12-03
申请人： WACKER CHEMIE AG
发明人： FABRY LASZLO , SOFIN MIKHAIL
IPC分类号： C30B29/06 , C01B33/035 , C22C28/00 , C30B29/08
摘要： Un procedimiento para producción de una barra con una longitud de 0,5 m a 4 m y con un diámetro de 25 mm a 220 mm, que comprende una barra delgada a base de silicio o de silicio aleado con germanio, sobre la que se deposita una aleación policristalina muy pura a base de germanio y silicio, conduciendo en un reactor de Siemens un gas de eductos que se compone de hidrógeno y de una mezcla de monosilano y monogermanio y contiene una proporción de germanio de menos que 20 % en moles, y poniéndolo en contacto allí con la barra delgada, que tiene una temperatura entre 400°C y 1.000°C, llegándose sobre la barra delgada a una deposición desde el gas de eductos, componiéndose la aleación depositada de 0,1 hasta menos que 20 % en moles de germanio y de 99,9 a 80 10 % en moles de silicio.

6. 发明专利

CA2795822C POLYCRYSTALLINE SILICON PORTION AND METHOD FOR BREAKING A SILICON BODY 未知
公开(公告)号：CA2795822C
公开(公告)日：2014-10-07
申请号：CA2795822
申请日：2012-11-16
申请人： WACKER CHEMIE AG
发明人： FABRY LASZLO , GRUEBL PETER , HUBER CHRISTIAN
IPC分类号： C01B33/02 , B26F3/00
摘要： The invention relates to a polycrystalline silicon portion having at least one fracture surface or cut surface, which comprises metal contamination of from 0.07 ng/cm2 to 1 ng/cm2. The invention also relates to a method for breaking a silicon body, preferably a rod of polycrystalline silicon, comprising the steps: a) determining the lowest natural bending frequency of the silicon body; b) exciting the silicon body in its lowest natural bending frequency by means of an oscillation generator, the excitation being carried out at an excitation point of the silicon body such that the silicon body breaks at the excitation point; so that a silicon portion having a fracture surface results which comprises metal contamination of from 0.07 ng/cm2 to 1 ng/cm2.

7. 发明专利

CA2755762C METHOD FOR PRODUCING POLYCRYSTALLINE SILICON RODS 未知
公开(公告)号：CA2755762C
公开(公告)日：2013-12-03
申请号：CA2755762
申请日：2011-10-19
申请人： WACKER CHEMIE AG
发明人： FABRY LASZLO , ALTMANN THOMAS , KRAUS HEINZ
IPC分类号： C30B29/06
摘要： The invention relates to a method for producing polycrystalline silicon rods by deposition of silicon on at least one thin rod in a reactor, wherein, before the silicon deposition, hydrogen halide at a temperature of 400 - 1000°C is introduced into the reactor containing at least one thin rod and is irradiated by means of UV light, as a result of which halogen and hydrogen radicals arise and the volatile halides that form are removed from the reactor.

8. 发明专利

DE102011089356A1 Polykristallines Siliciumstück und Verfahren zum Brechen eines Siliciumkörpers 未知
公开(公告)号：DE102011089356A1
公开(公告)日：2013-06-27
申请号：DE102011089356
申请日：2011-12-21
申请人： WACKER CHEMIE AG
发明人： FABRY LASZLO , HUBER CHRISTIAN , GRUEBL PETER
IPC分类号： C01B33/02 , B02C19/00 , B02C19/18
摘要： Die Erfindung betrifft ein polykristallines Siliciumstück mit wenigstens einer Bruch- oder Schnittfläche, die eine Verunreinigung mit Metallen von 0,07 ng/cm2 bis 1 ng/cm2 aufweist. Gegenstand der Erfindung ist auch ein Verfahren zum Brechen eines Siliciumkörpers, vorzugweise eines Stabs aus polykristallinem Silicium, umfassend die Schritte: a) Bestimmung der niedrigsten Biegeigenfrequenz des Siliciumkörpers; b) Anregung des Siliciumkörpers in seiner niedrigsten Biegeigenfrequenz mittels eines Schwingungserregers, wobei die Anregung an einer Anregungsstelle des Siliciumkörpers derart erfolgt, dass der Siliciumkörper an der Anregungsstelle bricht; so dass ein Siliciumstück mit einer Bruchfläche resultiert, die eine Verunreinigung mit Metallen von 0,07 ng/cm2 bis 1 ng/cm2 aufweist.

9. 发明专利

CA2686640A1 POLYCRYSTALLINE GERMANIUM-ALLOYED SILICON AND A METHOD FOR THE PRODUCTION THEREOF 未知
公开(公告)号：CA2686640A1
公开(公告)日：2010-06-11
申请号：CA2686640
申请日：2009-11-30
申请人： WACKER CHEMIE AG
发明人： FABRY LASZLO , SOFIN MIKHAIL
IPC分类号： C30B29/08 , C30B28/12 , C30B29/06 , H01L31/0312
摘要： Rod with a length of 0.5-4 m and a diameter of 25-220 mm made of a high-purity alloy deposited on silicon thin rod or germanium alloyed silicon thin rod, where the alloy comprises 0.1-50 mol.% of germanium and 99.9-50 mol.% of silicon, and has a polycrystalline structure, is claimed. An independent claim is included for preparing the rod comprising feeding educt gases in a Siemens reactor and contacting with a glowing thin rod, where a deposition of the educt gas is formed on the thin rod, the thin rod comprises silicon or germanium alloyed silicon and the educt gas comprises hydrogen, at least a silicon-containing compound and at least a germanium containing compound.

10. 发明专利

CA2803383C CHUNK POLYCRYSTALLINE SILICON AND PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS 未知
公开(公告)号：CA2803383C
公开(公告)日：2015-10-20
申请号：CA2803383
申请日：2013-01-24
申请人： WACKER CHEMIE AG
发明人： TRAUNSPURGER GERHARD , FABRY LASZLO , PECH REINER
IPC分类号： C30B29/06 , C30B33/02
摘要： The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, comprising a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600°, the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

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