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1. 发明申请

US20110101925A1 FEEDBACK-ADJUSTABLE CHARGING SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：反馈可调整充电系统及其方法
公开(公告)号：US20110101925A1
公开(公告)日：2011-05-05
申请号：US12913030
申请日：2010-10-27
申请人： WEI-CHIH LAI
发明人： WEI-CHIH LAI
IPC分类号： H02J7/04
CPC分类号： H02J7/047
摘要： The present invention provides a feedback-adjustable charging system applicable to a rechargeable electronic device and a method thereof. The feedback-adjustable charging system comprises a converter module, an adjustable voltage module and maybe a connective module. The converter module is coupled to an AC power supply and is used for converting AC power from the AC power supply into DC power. The adjustable voltage module is coupled to the converter module for receiving the DC power and producing a voltage used for charging. The connective module is coupled to the electronic device and the adjustable voltage module for receiving and transmitting the charging voltage to the electronic device and for producing a feedback parameter to the adjustable voltage module. In the charging system, the adjustable voltage module is used to adjust a value of the charging voltage according to the feedback parameter.
摘要翻译：本发明提供一种适用于可充电电子装置的可反馈调节充电系统及其方法。反馈可调充电系统包括转换器模块，可调电压模块和可能的连接模块。转换器模块耦合到交流电源，用于将交流电源的交流电转换成直流电源。可调电压模块耦合到转换器模块，用于接收直流电力并产生用于充电的电压。连接模块耦合到电子设备和可调节的电压模块，用于接收和发送到电子设备的充电电压并且产生到可调电压模块的反馈参数。在充电系统中，可调电压模块用于根据反馈参数调整充电电压的值。

2. 发明申请

US20050012113A1 [UV PHOTODETECTOR] 审中-公开
标题翻译： [紫外线照相机]
公开(公告)号：US20050012113A1
公开(公告)日：2005-01-20
申请号：US10707084
申请日：2003-11-20
申请人： JINN-KONG SHEU , WEI-CHIH LAI
发明人： JINN-KONG SHEU , WEI-CHIH LAI
IPC分类号： G01J1/42 , H01L31/0248 , H01L31/0304 , H01L31/0328 , H01L31/108 , H01L31/109
CPC分类号： H01L31/1085 , H01L31/03046 , Y02E10/544 , Y02P70/521
摘要： An UV photo-detector having a GaN-based interlayer is provided. Because of the excellent insulating property of the GaN-based interlayer and an excellent Schottky contact between the GaN-based interlayer and electrodes of the device, the leakage current of the device is substantially reduced. For example, the material of the GaN-based interlayer includes AlxInyGa1−x−yN, in which x≧0, y≧0, 1≧x+y. The GaN-based interlayer described above is manufactured without requiring a high temperature treatment process after the epitaxy process, and thus the process flow is simplified. Therefore, an UV photodetector having an excellent performance is obtained.
摘要翻译：提供具有GaN基中间层的UV光检测器。由于GaN基中间层具有优异的绝缘性能，并且GaN基中间层和器件的电极之间具有优异的肖特基接触，所以器件的漏电流明显降低。例如，GaN基中间层的材料包括Al x In y Ga 1-x-y N，其中x> = 0，y> = 0,1，= x + y。制造上述GaN基夹层，而不需要在外延工艺之后的高温处理工艺，因此简化了工艺流程。因此，获得了具有优异性能的紫外光检测器。

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